The emergent two-dimensional(2D)material,tin diselenide(SnSe_(2)),has garnered significant consideration for its potential in image capturing systems,optical communication,and optoelectronic memory.Nevertheless,SnSe_(...The emergent two-dimensional(2D)material,tin diselenide(SnSe_(2)),has garnered significant consideration for its potential in image capturing systems,optical communication,and optoelectronic memory.Nevertheless,SnSe_(2)-based photodetection faces obstacles,including slow response speed and low normalized detectivity.In this work,photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures have been implemented through a polydimethylsiloxane(PDMS)−assisted transfer method.These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range.The photodetector based on the SnS/SnSe_(2)heterostructure exhibits a significant responsivity of 4.99×10^(3)A∙W^(−1),normalized detectivity of 5.80×10^(12)cm∙Hz^(1/2)∙W^(−1),and fast response time of 3.13 ms,respectively,owing to the built-in electric field.Meanwhile,the highest values of responsivity,normalized detectivity,and response time for the photodetector based on the SnSe/SnSe_(2)heterostructure are 5.91×10^(3)A∙W^(−1),7.03×10^(12)cm∙Hz^(1/2)∙W−1,and 4.74 ms,respectively.And their photodetection performances transcend those of photodetectors based on individual SnSe_(2),SnS,SnSe,and other commonly used 2D materials.Our work has demonstrated an effective strategy to improve the performance of SnSe_(2)-based photodetectors and paves the way for their future commercialization.展开更多
Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency a...Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.展开更多
Two-dimensional Ruddlesden-Popper(2DRP)perovskites have attracted intense research interest for optoelectronic applications,due to their tunable optoelectronic properties and better environmental stability than their ...Two-dimensional Ruddlesden-Popper(2DRP)perovskites have attracted intense research interest for optoelectronic applications,due to their tunable optoelectronic properties and better environmental stability than their threedimensional counterparts.Furthermore,high-performance photodetectors based on single-crystal and polycrystalline thin-films 2DRP perovskites have shown great potential for practical application.However,the complex growth process of single-crystal membranes and uncontrollable phase distribution of polycrystalline films hinder the further development of 2DRP perovskites photodetectors.Herein,we report a series of high-performance photodetectors based on single-crystal-like phase-pure 2DRP perovskite films by designing a novel spacer source.Experimental and theoretical evidence demonstrates that phase-pure films substantially suppress defect states and ion migration.These highly sensitive photodetectors show I_(light)/I_(dark) ratio exceeding 3×10^(4),responsivities exceeding 16 A/W,and detectivities exceeding 3×10^(13) Jones,which are higher at least by 1 order than those of traditional mixed-phase thinfilms 2DRP devices(close to the reported single-crystal devices).More importantly,this strategy can significantly enhance the operational stability of optoelectronic devices and pave the way to large-area flexible productions.展开更多
Multifunctional photodetectors boost the development of traditional optical communication technology and emerging artificial intelligence fields, such as robotics and autonomous driving. However, the current implement...Multifunctional photodetectors boost the development of traditional optical communication technology and emerging artificial intelligence fields, such as robotics and autonomous driving. However, the current implementation of multifunctional detectors is based on the physical combination of optical lenses, gratings, and multiple photodetectors, the large size and its complex structure hinder the miniaturization, lightweight, and integration of devices. In contrast, perovskite materials have achieved remarkable progress in the field of multifunctional photodetectors due to their diverse crystal structures, simple morphology manipulation, and excellent optoelectronic properties. In this review, we first overview the crystal structures and morphology manipulation techniques of perovskite materials and then summarize the working mechanism and performance parameters of multifunctional photodetectors. Furthermore, the fabrication strategies of multifunctional perovskite photodetectors and their advancements are highlighted, including polarized light detection, spectral detection, angle-sensing detection, and selfpowered detection. Finally, the existing problems of multifunctional detectors and the perspectives of their future development are presented.展开更多
High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted ...High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted from the band structure calculation;the device responsivity peaks at 0.85 A/W,corresponding to a quantum efficiency(QE)of 56%for 2.0μm-thick absorption region.The dark current density of 1.03×10^(-3)A/cm^(2)is obtained under 50 mV applied bias.The device exhibits a saturated dark current shot noise limited specific detectivity(D*)of 3.29×1010cm·Hz^(1/2)/W(at a peak responsivity of 2.0μm)under-50 mV applied bias.展开更多
For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter ar...For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter are two parameters that contribute most measurement errors.In this work,we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter.The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results.The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature,aperture diameter and distance.Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.展开更多
Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible electronics.Herein,we integrate semiconducting devices on cellulose paper substrate through a simple abrasion te...Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible electronics.Herein,we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-performance photodetectors.A solvent-free WS_(2) film deposited on paper favors an effective electron-hole separation and hampers recombination.The as-prepared paper-based WS2 photodetectors exhibit a sensitive photoresponse over a wide spectral range spanning from ultraviolet(365 nm)to near-infrared(940 nm).Their responsivity value reaches up to~270 mA W^(−1) at 35 V under a power density of 35 mW cm^(−2).A high performance photodetector was achieved by controlling the environmental exposure as the ambient oxygen molecules were found to decrease the photoresponse and stability of the WS_(2) photodetector.Furthermore,we have built a spectrometer using such a paperbased WS_(2) device as the photodetecting component to illustrate its potential application.The present work could promote the development of cost-effective disposable photodetection devices.展开更多
It is of vital importance to improve the long-term and photostability of organic photovoltaics,including organic solar cells(OSCs)and organic photodetectors(OPDs),for their ultimate industrialization.Herein,two series...It is of vital importance to improve the long-term and photostability of organic photovoltaics,including organic solar cells(OSCs)and organic photodetectors(OPDs),for their ultimate industrialization.Herein,two series of terpolymers featuring with an antioxidant butylated hydroxytoluene(BHT)-terminated side chain,PTzBI-EHp-BTBHTx and N2200-BTBHTx(x=0.05,0.1,0.2),are designed and synthesized.It was found that incorporating appropriate ratio of benzothiadiazole(BT)with BHT side chains on the conjugated backbone would induce negligible effect on the molecular weight,absorption spectra and energy levels of polymers,however,which would obviously enhance the photostability of these polymers.Consequently,all-polymer solar cells(all-PSCs)and photodetectors were fabricated,and the all-PSC based on PTzBI-EHp-BTBHT0.05:N2200 realized an optimal power conversion efficiency(PCE)approaching~10%,outperforming the device based on pristine PTzBI-EHp:N2200.Impressively,the all-PSCs based on BHT-featuring terpolymers displayed alleviated PCEs degradation under continuous irradiation for 300 h due to the improved morphological and photostability of active layers.The OPDs based on BHT-featuring terpolymers achieved a lower dark current at−0.1 bias,which could be stabilized even after irradiation over 400 h.This study provides a feasible approach to develop terpolymers with antioxidant efficacy for improving the lifetime of OSCs and OPDs.展开更多
Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable m...Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable materials and wasteful fabrication methods. Herein, we present ZnO nanowires(NWs) based degradable high-performance UV photodetectors(PDs) on flexible chitosan substrate. Systematic investigations reveal the presented device exhibits excellent photo response, including high responsivity(55 A/W), superior specific detectivity(4×10^(14) jones), and the highest gain(8.5×10~(10)) among the reported state of the art biodegradable PDs. Further, the presented PDs display excellent mechanical flexibility under wide range of bending conditions and thermal stability in the measured temperature range(5–50 ℃).The biodegradability studies performed on the device, in both deionized(DI) water(pH≈6) and PBS solution(pH=7.4),show fast degradability in DI water(20 mins) as compared to PBS(48 h). These results show the potential the presented approach holds for green and cost-effective fabrication of wearable, and disposable sensing systems with reduced adverse environmental impact.展开更多
Ultraviolet(UV)photodetectors are extensively adopted in the fields of the Internet of Things,optical communications and imaging.Nowadays,with broadening the application scope of UV photodetectors,developing integrate...Ultraviolet(UV)photodetectors are extensively adopted in the fields of the Internet of Things,optical communications and imaging.Nowadays,with broadening the application scope of UV photodetectors,developing integrated devices with more functionalities rather than basic photo-detecting ability are highly required and have been triggered ever-growing interest in scientific and industrial communities.Ferroelectric thin films have become a potential candidate in the field of UV detection due to their wide bandgap and unique photovoltaic characteristics.Additionally,ferroelectric thin films perform excellent dielectric,piezoelectric,pyroelectric,acousto-optic effects,etc.,which can satisfy the demand for the diversified development of UV detectors.In this review,according to the different roles of ferroelectric thin films in the device,the UV photodetectors based on ferroelectric films are classified into ferroelectric depolarization field driven type,ferroelectric depolarization field and built-in electric field co-driven type,and ferroelectric field enhanced type.These three types of ferroelectric UV photodetectors have great potential and are expected to promote the development of a new generation of UV detection technology.At the end of the paper,the advantages and challenges of three types of ferroelectric UV photodetectors are summarized,and the possible development direction in the future is proposed.展开更多
We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the...We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure.The device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,respectively.This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind detectors.Additionally,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system.Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.展开更多
Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the constru...Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film.A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105,a decent responsivity of~343 mA/W,a respectable specific detectivity of~2.56×10^(12)Jones,and a rapid response time of 4.5/379μs,under 730 nm light irradiation.The detector also displays an outstanding long-term air stability and operational durability.In addition,thanks to the excellent flexibility,the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests.Furthermore,the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate,suggesting a possible application in the area of flexible and wearable health monitoring.展开更多
Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent ...Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.展开更多
In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag heterostructure.Ag particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visibl...In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag heterostructure.Ag particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visible light detection perfor-mance of the heterojunction device.At 380 nm,the responsivity and detectivity of TiO_(2)@GaO_(x)N_(y)-Ag were 0.94 A/W and 4.79×109 Jones,respectively,and they increased to 2.86 A/W and 7.96×1010 Jones at 580 nm.The rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s,respectively.Uniquely,at 580 nm,the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO_(2),Ga_(2)O_(3),and other heterojunctions.The excellent optoelectronic characteristics of the TiO_(2)@GaO_(x)N_(y)-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱband structure of the metal-semiconductor-metal heterojunction and the plasmon resonance effect of Ag,which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination rate.It is fur-ther illuminated by finite difference time domain method(FDTD)simulation and photoelectric measurements.The TiO_(2)@GaO_(x)N_(y)-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communica-tion,imaging,and sensing networks.展开更多
In this article, unique spectral features of short-wave infrared band of 1 μm–3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, t...In this article, unique spectral features of short-wave infrared band of 1 μm–3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.展开更多
High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dim...High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dimensional materials(which have tunable optical absorption and high carrier mobility) with organic materials(which are abundant with low cost, high flexibility and large-area scalability) to form thin-film heterojunctions, high-responsivity photodetectors could be predicted with fast response speed in a wide spectra region.In this review, we give a comprehensive summary of photodetectors based on two-dimensional materials and organic thin-film heterojunctions, which includes hybrid assisted enhanced devices, single-layer enhanced devices, vertical heterojunction devices and tunable vertical heterojunction devices. We also give a systematic classification and perspectives on the future development of these types of photodetectors.展开更多
Very small metallic nanostructures,i.e.,plasmonic nanoparticles(NPs),can demonstrate the localized surface plasmon resonance(LSPR)e ect,a characteristic of the strong light absorption,scattering and localized electrom...Very small metallic nanostructures,i.e.,plasmonic nanoparticles(NPs),can demonstrate the localized surface plasmon resonance(LSPR)e ect,a characteristic of the strong light absorption,scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons.The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors.In this work,significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture.Various size and elemental composition of monometallic Ag and Au NPs,as well as bimetallic alloy Ag Au NPs,are fabricated on Ga N(0001)by the solid-state dewetting approach.The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs,resulting in the highly enhanced photoresponsivity of 112 A W-1,detectivity of 2.4×1012 Jones and external quantum e ciency of 3.6×104%with the high Ag percentage of Ag Au alloy NPs at a low bias of 0.1 V.The Ag Au alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms,respectively.The improved photoresponse with the Ag Au alloy NPs is correlated with the simultaneous e ect of strong plasmon absorption and scattering,increased injection of hot electrons into the Ga N conduction band and reduced barrier height at the alloy NPs/Ga N interface.展开更多
Bi2O2Se thin film could be one of the promising material candidates for the next-generation electronic and optoelectronic applications. However, the performance of Bi2O2Se thin film-based device is not fully explored ...Bi2O2Se thin film could be one of the promising material candidates for the next-generation electronic and optoelectronic applications. However, the performance of Bi2O2Se thin film-based device is not fully explored in the photodetecting area. Considering the fact that the electrical properties such as carrier mobility, work function, and energy band structure of Bi2O2Se are thickness-dependent, the in-plane Bi2O2Se homojunctions consisting of layers with different thicknesses are successfully synthesized by the chemical vapor deposition(CVD) method across the terraces on the mica substrates,where terraces are created in the mica surface layer peeling off process. In this way, effective internal electrical fields are built up along the Bi2O2Se homojunctions, exhibiting diode-like rectification behavior with an on/off ratio of 102, what is more, thus obtained photodetectors possess highly sensitive and ultrafast features, with a maximum photoresponsivity of 2.5 A/W and a lifetime of 4.8 μs. Comparing with the Bi2O2Se uniform thin films, the photo-electric conversion efficiency is greatly improved for the in-plane homojunctions.展开更多
The perovskite photodetectors can be used for image sensing, environmental monitoring, optical communication, and chemical/biological detection. In the recent five years, the perovskite photoelectric detectors with va...The perovskite photodetectors can be used for image sensing, environmental monitoring, optical communication, and chemical/biological detection. In the recent five years, the perovskite photoelectric detectors with various devices are welldesigned and have made unprecedented progress of light detection. It is necessary to emphasize the most interesting works and summarize them to provide researchers with systematic information. In this review, we report the recent progress in perovskite photodetectors, including highly sensitive, ultrafast response speed, high gain, low noise, flexibility, and narrowband, concentrating on the photodetection performance of versatile halide perovskites(organic–inorganic hybrid and all inorganic compositions). Currently, organic–inorganic hybrid and all-inorganic halide microcrystals with polycrystalline film, nanoparticle/wire/chip, and block monocrystalline morphology control show important performance in response rate,decomposition rate, noise equivalent power, linear dynamic range, and response speed. It is expected that a comprehensive compendium of the research status of perovskite photodetectors will contribute to the development of this area.展开更多
The controllable growth of large area band gap engineered-semiconductor nanowires(NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this ...The controllable growth of large area band gap engineered-semiconductor nanowires(NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS_xSe_(1-x) nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS_xSe_(1-x)NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS_xSe_(1-x)NWs possess smooth surface and uniform diameter. The aligned CdS_xSe_(1-x)NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS_xSe_(1-x)NWs. These devices exhibit high performance and fast response speed with photoresponsivity ～670 A W^(-1) and photoresponse time ～76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays,which exhibit promising applications in future optoelectronic integrated circuits.展开更多
基金supported by the Jilin Scientific and Technological Development Program(Grant No.20230101286JC)National Natural Science Foundation of China(Grant Nos.61975051,6227503,and 52002110)Hebei Provincial Department of Education Innovation Ability Training Funding Project for graduate students.
文摘The emergent two-dimensional(2D)material,tin diselenide(SnSe_(2)),has garnered significant consideration for its potential in image capturing systems,optical communication,and optoelectronic memory.Nevertheless,SnSe_(2)-based photodetection faces obstacles,including slow response speed and low normalized detectivity.In this work,photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures have been implemented through a polydimethylsiloxane(PDMS)−assisted transfer method.These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range.The photodetector based on the SnS/SnSe_(2)heterostructure exhibits a significant responsivity of 4.99×10^(3)A∙W^(−1),normalized detectivity of 5.80×10^(12)cm∙Hz^(1/2)∙W^(−1),and fast response time of 3.13 ms,respectively,owing to the built-in electric field.Meanwhile,the highest values of responsivity,normalized detectivity,and response time for the photodetector based on the SnSe/SnSe_(2)heterostructure are 5.91×10^(3)A∙W^(−1),7.03×10^(12)cm∙Hz^(1/2)∙W−1,and 4.74 ms,respectively.And their photodetection performances transcend those of photodetectors based on individual SnSe_(2),SnS,SnSe,and other commonly used 2D materials.Our work has demonstrated an effective strategy to improve the performance of SnSe_(2)-based photodetectors and paves the way for their future commercialization.
基金Project supported by the National Natural Science Foundation of China (Grant No.11974379)the National Key Basic Research and Development Program of China (Grant No.2021YFC2203400)Jiangsu Vocational Education Integrated Circuit Technology “Double-Qualified” Famous Teacher Studio (Grant No.2022-13)。
文摘Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.
基金Shenzhen-Hong Kong-Macao Science and Technology Innovation Project(Category C),Grant/Award Number:SGDX2020110309360100Fundo para o Desenvolvimento das Ciências e da Tecnologia,Grant/Award Numbers:FDCT-0044/2020/A1,0034/2021/APD+3 种基金Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials,Grant/Award Number:2019B121205002Natural Science Foundation of Guangdong Province,Grant/Award Number:2019A1515012186National Natural Science Foundation of China,Grant/Award Numbers:61935017,62175268,62105292UM's research fund,Grant/Award Numbers:MYRG2018-00148-IAPME,MYRG2020-00151-IAPME。
文摘Two-dimensional Ruddlesden-Popper(2DRP)perovskites have attracted intense research interest for optoelectronic applications,due to their tunable optoelectronic properties and better environmental stability than their threedimensional counterparts.Furthermore,high-performance photodetectors based on single-crystal and polycrystalline thin-films 2DRP perovskites have shown great potential for practical application.However,the complex growth process of single-crystal membranes and uncontrollable phase distribution of polycrystalline films hinder the further development of 2DRP perovskites photodetectors.Herein,we report a series of high-performance photodetectors based on single-crystal-like phase-pure 2DRP perovskite films by designing a novel spacer source.Experimental and theoretical evidence demonstrates that phase-pure films substantially suppress defect states and ion migration.These highly sensitive photodetectors show I_(light)/I_(dark) ratio exceeding 3×10^(4),responsivities exceeding 16 A/W,and detectivities exceeding 3×10^(13) Jones,which are higher at least by 1 order than those of traditional mixed-phase thinfilms 2DRP devices(close to the reported single-crystal devices).More importantly,this strategy can significantly enhance the operational stability of optoelectronic devices and pave the way to large-area flexible productions.
基金supported financially by the National Key R&D Program of China (Nos. 2018YFA0208501 and 2018YFA0703200)the National Natural Science Foundation of China (NSFC, Nos. 52103236, 91963212, 21875260)Beijing National Laboratory for Molecular Sciences (No. BNLMSCXXM-202005)。
文摘Multifunctional photodetectors boost the development of traditional optical communication technology and emerging artificial intelligence fields, such as robotics and autonomous driving. However, the current implementation of multifunctional detectors is based on the physical combination of optical lenses, gratings, and multiple photodetectors, the large size and its complex structure hinder the miniaturization, lightweight, and integration of devices. In contrast, perovskite materials have achieved remarkable progress in the field of multifunctional photodetectors due to their diverse crystal structures, simple morphology manipulation, and excellent optoelectronic properties. In this review, we first overview the crystal structures and morphology manipulation techniques of perovskite materials and then summarize the working mechanism and performance parameters of multifunctional photodetectors. Furthermore, the fabrication strategies of multifunctional perovskite photodetectors and their advancements are highlighted, including polarized light detection, spectral detection, angle-sensing detection, and selfpowered detection. Finally, the existing problems of multifunctional detectors and the perspectives of their future development are presented.
基金the National Key Technologies R&D Program of China(Grant Nos.2019YFA0705203 and 2018YFA0209104)Major Program of the National Natural Science Foundation of China(Grant No.61790581)Aeronautical Science Foundation of China(Grant No.20182436004).
文摘High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted from the band structure calculation;the device responsivity peaks at 0.85 A/W,corresponding to a quantum efficiency(QE)of 56%for 2.0μm-thick absorption region.The dark current density of 1.03×10^(-3)A/cm^(2)is obtained under 50 mV applied bias.The device exhibits a saturated dark current shot noise limited specific detectivity(D*)of 3.29×1010cm·Hz^(1/2)/W(at a peak responsivity of 2.0μm)under-50 mV applied bias.
基金This work was supported by the National Key Technologies R&D Program of China(No.2019YFA0705203,2019YFA070104)the National Natural Science Foundation of China(No.62004189)the State Key Laboratory of Special Rare Metal Materials,Northwest Rare Metal Materials Research Institute(No.SKL2023K00X).
文摘For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter are two parameters that contribute most measurement errors.In this work,we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter.The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results.The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature,aperture diameter and distance.Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.
基金Felix Carrascoso (ICMM-CSIC) for support with the metal evaporationfunding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (grant agreement n°755655,ERC-StG 2017 project2D-TOPSENSE)+5 种基金the Ministry of Science and Innovation (Spain) through the project PID2020-115566RB-I00support from the National Natural Science Foundation of China under grant No.61704129 and No.62011530438the Key Research and Development Program of Shaanxi (Program No.2021KW-02)Fundamental Research Funds for the Central Universities (JB211409)the grant from China Scholarship Council (CSC) under No.201908610178the support from European Union’s Horizon 2020 research and innovation program under the grant agreement 956813 (2Exciting)。
文摘Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible electronics.Herein,we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-performance photodetectors.A solvent-free WS_(2) film deposited on paper favors an effective electron-hole separation and hampers recombination.The as-prepared paper-based WS2 photodetectors exhibit a sensitive photoresponse over a wide spectral range spanning from ultraviolet(365 nm)to near-infrared(940 nm).Their responsivity value reaches up to~270 mA W^(−1) at 35 V under a power density of 35 mW cm^(−2).A high performance photodetector was achieved by controlling the environmental exposure as the ambient oxygen molecules were found to decrease the photoresponse and stability of the WS_(2) photodetector.Furthermore,we have built a spectrometer using such a paperbased WS_(2) device as the photodetecting component to illustrate its potential application.The present work could promote the development of cost-effective disposable photodetection devices.
基金The work was financially supported by National Key Research and Development Program of China(2019YFA0705900,2022YFB4200400)funded by MOSTthe Basic and Applied Basic Research Major Program of Guangdong Province(No.2019B030302007)+2 种基金the National Natural Science Foundation of China(No.U21A6002)Guangdong-Hong Kong-Macao joint laboratory of optoelectronic and magnetic functional materials(No.2019B121205002)C.Z.acknowledges the financial support by Basic and Applied Basic Research Major Program of Guangdong Province(No.202201010270).
文摘It is of vital importance to improve the long-term and photostability of organic photovoltaics,including organic solar cells(OSCs)and organic photodetectors(OPDs),for their ultimate industrialization.Herein,two series of terpolymers featuring with an antioxidant butylated hydroxytoluene(BHT)-terminated side chain,PTzBI-EHp-BTBHTx and N2200-BTBHTx(x=0.05,0.1,0.2),are designed and synthesized.It was found that incorporating appropriate ratio of benzothiadiazole(BT)with BHT side chains on the conjugated backbone would induce negligible effect on the molecular weight,absorption spectra and energy levels of polymers,however,which would obviously enhance the photostability of these polymers.Consequently,all-polymer solar cells(all-PSCs)and photodetectors were fabricated,and the all-PSC based on PTzBI-EHp-BTBHT0.05:N2200 realized an optimal power conversion efficiency(PCE)approaching~10%,outperforming the device based on pristine PTzBI-EHp:N2200.Impressively,the all-PSCs based on BHT-featuring terpolymers displayed alleviated PCEs degradation under continuous irradiation for 300 h due to the improved morphological and photostability of active layers.The OPDs based on BHT-featuring terpolymers achieved a lower dark current at−0.1 bias,which could be stabilized even after irradiation over 400 h.This study provides a feasible approach to develop terpolymers with antioxidant efficacy for improving the lifetime of OSCs and OPDs.
基金supported in part by Engineering and Physical Science Research Council (EPSRC) through Engineering Fellowship (EP/R029644/1)Hetero-print Programme Grant (EP/R03480X/1)European Commission through grant references (H2020-MSCAITN2019-861166)。
文摘Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable materials and wasteful fabrication methods. Herein, we present ZnO nanowires(NWs) based degradable high-performance UV photodetectors(PDs) on flexible chitosan substrate. Systematic investigations reveal the presented device exhibits excellent photo response, including high responsivity(55 A/W), superior specific detectivity(4×10^(14) jones), and the highest gain(8.5×10~(10)) among the reported state of the art biodegradable PDs. Further, the presented PDs display excellent mechanical flexibility under wide range of bending conditions and thermal stability in the measured temperature range(5–50 ℃).The biodegradability studies performed on the device, in both deionized(DI) water(pH≈6) and PBS solution(pH=7.4),show fast degradability in DI water(20 mins) as compared to PBS(48 h). These results show the potential the presented approach holds for green and cost-effective fabrication of wearable, and disposable sensing systems with reduced adverse environmental impact.
基金supported by the Guang Dong Basic and Applied Basic Research Foundation,China(2021B1515120025)。
文摘Ultraviolet(UV)photodetectors are extensively adopted in the fields of the Internet of Things,optical communications and imaging.Nowadays,with broadening the application scope of UV photodetectors,developing integrated devices with more functionalities rather than basic photo-detecting ability are highly required and have been triggered ever-growing interest in scientific and industrial communities.Ferroelectric thin films have become a potential candidate in the field of UV detection due to their wide bandgap and unique photovoltaic characteristics.Additionally,ferroelectric thin films perform excellent dielectric,piezoelectric,pyroelectric,acousto-optic effects,etc.,which can satisfy the demand for the diversified development of UV detectors.In this review,according to the different roles of ferroelectric thin films in the device,the UV photodetectors based on ferroelectric films are classified into ferroelectric depolarization field driven type,ferroelectric depolarization field and built-in electric field co-driven type,and ferroelectric field enhanced type.These three types of ferroelectric UV photodetectors have great potential and are expected to promote the development of a new generation of UV detection technology.At the end of the paper,the advantages and challenges of three types of ferroelectric UV photodetectors are summarized,and the possible development direction in the future is proposed.
基金the National Natural Science Foundation of China(Grant Nos.U22A2073,11974433,91833301,and 11974122)。
文摘We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure.The device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,respectively.This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind detectors.Additionally,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system.Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.
基金supported by the National Natural Science Foundation of China(NSFC,Nos.62275002,51902078,62074048,62075053)the Anhui Provincial Natural Science Foundation(2008085MF205)the Fundamental Research Funds for the Central Universities(JZ2020HGTB0051,PA2020GDKC0024).
文摘Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film.A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105,a decent responsivity of~343 mA/W,a respectable specific detectivity of~2.56×10^(12)Jones,and a rapid response time of 4.5/379μs,under 730 nm light irradiation.The detector also displays an outstanding long-term air stability and operational durability.In addition,thanks to the excellent flexibility,the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests.Furthermore,the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate,suggesting a possible application in the area of flexible and wearable health monitoring.
基金supported by the National Natural Science Foundation of China(No.62274148),Science Foundation of Zhejiang Sci-Tech University(Nos.22062337-Y,20062224-Y,22062291-Y)Guangxi key laboratory of precision navigation technology and application[Guilin University of Electronic Technology](No.DH202229).
文摘Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.
基金supported by National Natural Science Foundation of China(Nos.62027818,61874034,and 51861135105)Natural Science Foundation of Shanghai(No.18ZR1405000)Shanghai Science and Technology Innovation Program(No.19520711500).
文摘In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag heterostructure.Ag particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visible light detection perfor-mance of the heterojunction device.At 380 nm,the responsivity and detectivity of TiO_(2)@GaO_(x)N_(y)-Ag were 0.94 A/W and 4.79×109 Jones,respectively,and they increased to 2.86 A/W and 7.96×1010 Jones at 580 nm.The rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s,respectively.Uniquely,at 580 nm,the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO_(2),Ga_(2)O_(3),and other heterojunctions.The excellent optoelectronic characteristics of the TiO_(2)@GaO_(x)N_(y)-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱband structure of the metal-semiconductor-metal heterojunction and the plasmon resonance effect of Ag,which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination rate.It is fur-ther illuminated by finite difference time domain method(FDTD)simulation and photoelectric measurements.The TiO_(2)@GaO_(x)N_(y)-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communica-tion,imaging,and sensing networks.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0402400)the National Natural Science Foundation of China(Grant Nos.61675225,61605232,and 61775228)the Shanghai Rising-Star Program,China(Grant No.17QA1404900)
文摘In this article, unique spectral features of short-wave infrared band of 1 μm–3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.
基金Project supported by National Science Funds for Creative Research Groups of China(Grant No.61421002)
文摘High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dimensional materials(which have tunable optical absorption and high carrier mobility) with organic materials(which are abundant with low cost, high flexibility and large-area scalability) to form thin-film heterojunctions, high-responsivity photodetectors could be predicted with fast response speed in a wide spectra region.In this review, we give a comprehensive summary of photodetectors based on two-dimensional materials and organic thin-film heterojunctions, which includes hybrid assisted enhanced devices, single-layer enhanced devices, vertical heterojunction devices and tunable vertical heterojunction devices. We also give a systematic classification and perspectives on the future development of these types of photodetectors.
基金Financial support from the National Research Foundation of Korea(NRF)Grant funded by the Korean Government(MSIP)(Nos.NRF-2019R1A2C4069438 and NRF-2018R1A6A1A03025242)in part by the research grant of Kwangwoon University in 2020.
文摘Very small metallic nanostructures,i.e.,plasmonic nanoparticles(NPs),can demonstrate the localized surface plasmon resonance(LSPR)e ect,a characteristic of the strong light absorption,scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons.The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors.In this work,significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture.Various size and elemental composition of monometallic Ag and Au NPs,as well as bimetallic alloy Ag Au NPs,are fabricated on Ga N(0001)by the solid-state dewetting approach.The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs,resulting in the highly enhanced photoresponsivity of 112 A W-1,detectivity of 2.4×1012 Jones and external quantum e ciency of 3.6×104%with the high Ag percentage of Ag Au alloy NPs at a low bias of 0.1 V.The Ag Au alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms,respectively.The improved photoresponse with the Ag Au alloy NPs is correlated with the simultaneous e ect of strong plasmon absorption and scattering,increased injection of hot electrons into the Ga N conduction band and reduced barrier height at the alloy NPs/Ga N interface.
基金Project supported by the National Natural Science Foundation of China(Grant No.61705066)the Open Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),China(Grant No.IPOC2018B004)the National Key Research and Development Program,China(Grant No.2016YFA0202401)
文摘Bi2O2Se thin film could be one of the promising material candidates for the next-generation electronic and optoelectronic applications. However, the performance of Bi2O2Se thin film-based device is not fully explored in the photodetecting area. Considering the fact that the electrical properties such as carrier mobility, work function, and energy band structure of Bi2O2Se are thickness-dependent, the in-plane Bi2O2Se homojunctions consisting of layers with different thicknesses are successfully synthesized by the chemical vapor deposition(CVD) method across the terraces on the mica substrates,where terraces are created in the mica surface layer peeling off process. In this way, effective internal electrical fields are built up along the Bi2O2Se homojunctions, exhibiting diode-like rectification behavior with an on/off ratio of 102, what is more, thus obtained photodetectors possess highly sensitive and ultrafast features, with a maximum photoresponsivity of 2.5 A/W and a lifetime of 4.8 μs. Comparing with the Bi2O2Se uniform thin films, the photo-electric conversion efficiency is greatly improved for the in-plane homojunctions.
基金Project supported by the International Cooperation and Exchange Project of Jilin Province,China(Grant Nos.20170414002GH and 20180414001GH)
文摘The perovskite photodetectors can be used for image sensing, environmental monitoring, optical communication, and chemical/biological detection. In the recent five years, the perovskite photoelectric detectors with various devices are welldesigned and have made unprecedented progress of light detection. It is necessary to emphasize the most interesting works and summarize them to provide researchers with systematic information. In this review, we report the recent progress in perovskite photodetectors, including highly sensitive, ultrafast response speed, high gain, low noise, flexibility, and narrowband, concentrating on the photodetection performance of versatile halide perovskites(organic–inorganic hybrid and all inorganic compositions). Currently, organic–inorganic hybrid and all-inorganic halide microcrystals with polycrystalline film, nanoparticle/wire/chip, and block monocrystalline morphology control show important performance in response rate,decomposition rate, noise equivalent power, linear dynamic range, and response speed. It is expected that a comprehensive compendium of the research status of perovskite photodetectors will contribute to the development of this area.
基金the NSF of China (Nos.51525202,61574054,61635001,61505051,and 51772088)the Hunan province science and technology plan (Nos.2014FJ2001 and 2014TT1004)+1 种基金the Aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Provincethe Fundamental Research Funds for the Central Universities
文摘The controllable growth of large area band gap engineered-semiconductor nanowires(NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS_xSe_(1-x) nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS_xSe_(1-x)NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS_xSe_(1-x)NWs possess smooth surface and uniform diameter. The aligned CdS_xSe_(1-x)NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS_xSe_(1-x)NWs. These devices exhibit high performance and fast response speed with photoresponsivity ～670 A W^(-1) and photoresponse time ～76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays,which exhibit promising applications in future optoelectronic integrated circuits.
