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Simulation of M-H Loops in FeCo Polycrystalline Thin Films at Finite Temperatures
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作者 Long-Ze Wan Jiang-Nan Li +2 位作者 Jun-Jie Song Chuan Liu Dan Wei 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第4期101-103,共3页
We apply the hybrid Monte Carlo (HMC) micromagnetie method to FeCo soft magnetic polycrystalline films and test the new method by comparing with the result worked out by micromagnetics using Landau Lifshitz-Gilbert ... We apply the hybrid Monte Carlo (HMC) micromagnetie method to FeCo soft magnetic polycrystalline films and test the new method by comparing with the result worked out by micromagnetics using Landau Lifshitz-Gilbert equations, and the magnetic properties of FeCo films are understood better by carefully considering the effects of polycrystalline microstructures. The hysteresis loops of the FeCo film from low temperature up to 1100K are simulated by the new HMC micromagnetic method. 展开更多
关键词 Simulation of M-H Loops in FeCo polycrystalline thin films at Finite Temperatures
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Local leakage current behaviours of BiFeO_3 films 被引量:1
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作者 邹成 陈斌 +5 位作者 朱小健 左正笏 刘宜伟 陈远富 詹清峰 李润伟 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第11期493-498,共6页
The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathway... The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeOa films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO3 films. 展开更多
关键词 polycrystalline BiFeO3 thin films local leakage current conductive atomic force microscopy
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Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength 被引量:2
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作者 段春艳 刘超 +3 位作者 艾斌 赖键钧 邓幼俊 沈辉 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第12期48-52,共5页
Selected area laser-crystallized polycrystalline silicon (p-Si) thin films were prepared by the third harmonics (355 nm wavelength) generated by a solid-state pulsed Nd:YAG laser. Surface morphologies of 400 nm t... Selected area laser-crystallized polycrystalline silicon (p-Si) thin films were prepared by the third harmonics (355 nm wavelength) generated by a solid-state pulsed Nd:YAG laser. Surface morphologies of 400 nm thick films after laser irradiation were analyzed. Raman spectra show that film crystallinity is improved with in- crease of laser energy. The optimum laser energy density is sensitive to the film thickness. The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm^2 for 300 nm thick films and between 777-993 mJ/cm^2 for 400 nm thick films. The optimized laser energy density is 634, 975 and 1571 mJ/cm^2 for 300, 400 and 500 nm thick films, respectively. 展开更多
关键词 polycrystalline silicon thin films Nd:YAG laser laser crystallization
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Preparation and properties of 0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)ceramics and polycrystalline films
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作者 K.M.Zhidel A.V.Pavlenko 《Journal of Advanced Dielectrics》 CAS 2022年第1期1-5,共5页
In this paper,we report the successful growth of 0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)/SrTiO_(3)/Si(001)heterostructure using RFcathode sputtering in an oxygen atmosphere.The deposited films have been investigated b... In this paper,we report the successful growth of 0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)/SrTiO_(3)/Si(001)heterostructure using RFcathode sputtering in an oxygen atmosphere.The deposited films have been investigated by X-ray diffractometry and spectroscopic ellip-sometry(SE).0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)films on silicon substrates with a strontium titanate buffer layer are single-phase,polycrystalline with a texture in the 001 direction.The unit cell parameters calculated in the tetragonal approximation were c=4.005±0.001Å;a=3.995±0.001Å.The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed.Dielectric properties and capacitance-voltage characteristics have been measured.The ellipsometric parameters have been obtained. 展开更多
关键词 Relaxation non-Debye type process phase transition high-temperature multiferroic polycrystalline thin films
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