The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric ...The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric precision in the determination of the microcantilever beam deflection. The method is described clearly. In the deflection of microbeams, the influence of the indenter tip pushing into the top of the microbeams and the curvature across its width must be considered. The measurements were made on single-layer, micro-thick, several kinds of width and length polysilicon beams that were fabricated using conventional integrated circuit (IC) fabrication techniques. The elastic of a polysilicon microcantilever beam will vary linearly with the force and the deformation is thought to be elastic. Furthermore, it suggests that Young modulus of the beam can be determined from the slope of this linear relation. From the load deflection data acquired during bending the mechanical properties of the thin films were determined. Measured Young modulus is 137 GPa with approximately a ±2.9%～±6.3% difference in Young modulus.展开更多
In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethac...In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing(P/E)operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio(Ion/Ioff ratio)of the device with a tunneling layer thickness of 85 nm are 0.01 cm^2·V^-1·s^-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of±60 V.展开更多
A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of hol...A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.展开更多
A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC's 0.18 μm EEPROM process. The polysilicon-assisted SCRs take advantage of poly...A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC's 0.18 μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge (ESD) current without occupying extra layout area. TLP current-voltage (I-V) measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of con- ventional MLSCR's. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 μm2 layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.展开更多
Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate ...Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.展开更多
A systematic research on the pyrolysis process of polymethysilicone （SAR-2） and the thermostability of the pyrolysis residue was made by the thermogravimetric analysis, DTA and infrared spectroscopy.The experimental...A systematic research on the pyrolysis process of polymethysilicone （SAR-2） and the thermostability of the pyrolysis residue was made by the thermogravimetric analysis, DTA and infrared spectroscopy.The experimental results indicate that the pyrolysis residue of SAR-2 converted into the amorphous SiCxO4-x phase above 900 ℃,the residue at 1200 ℃ is the most thermostable and antioxidant.It is suitable to be used as polysilicone preceramic.展开更多
Non-thermal plasma at atmospheric pressure was explored for the preparation ofpolysilicon from SiCl4.The power supply sources of positive pulse and alternating current （8 kHzand 100 kHz） were compared for polysilico...Non-thermal plasma at atmospheric pressure was explored for the preparation ofpolysilicon from SiCl4.The power supply sources of positive pulse and alternating current （8 kHzand 100 kHz） were compared for polysilicon preparation.The samples prepared by using the100 kHz power source were crystalline silicon.The effects of H2 and SiCl4 volume fractions wereinvestigated.The optical emission spectra showed that silicon species played an important role inpolysilicon展开更多
A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated,in which polysilicon is sandwiched between oxide layers as a floating gate.Simulations f...A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated,in which polysilicon is sandwiched between oxide layers as a floating gate.Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed.The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing(P/E) operations at various P/E voltages are discussed.The simulated results show that present memory exhibits a large memory window of 57.5 V,and a high read current on/off ratio of ≈ 10~3.Compared with the reported experimental results,these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects,which shows great promise in device designing and practical application.展开更多
In order to accomplish reliable mechanical design of MEMS, the infuences of surface roughness and octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on the mechani- cal properties of micromachined polysil...In order to accomplish reliable mechanical design of MEMS, the infuences of surface roughness and octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on the mechani- cal properties of micromachined polysilicon flms for MEMS are investigated. Surface efect on the fracture properties of micromachined polysilicon flms is evaluated with a new microtensile testing method using a magnet-coil force actuator. Statistical analysis of the surface roughness efects on the tensile strength predicated the surface roughness characterization of polysilicon flms being tested and the direct relation of the mechanical properties with the surface roughness features. The fracture strength decreases with the increase of the surface roughness. The octadecyltrichlorosi- lane self-assembled monolayers coating leads to an increase of the average fracture strength up to 32.46%. Surface roughness and the hydrophobic properties of specimen when coated with OTS flms are the two main factors infuencing the tensile strength of micromachined polysilicon flms for MEMS.展开更多
The bending strength of microfabricated polysilicon beams was measured by beam bending using a nanoindenter. Also, the tensile strength of microfabricated polysilicon thin ?lms was measured by tensile testing with a n...The bending strength of microfabricated polysilicon beams was measured by beam bending using a nanoindenter. Also, the tensile strength of microfabricated polysilicon thin ?lms was measured by tensile testing with a new microtensile test device. It was found that the bending strength and tensile strength of polysilicon microstructures exerts size e?ect on the size of the specimens. In such cases, the size e?ect can be traced back to the ratio of surface area to volume as the governing parameter. A statistical analysis of the bending strength for various specimen sizes shows that the average bending strength of polysilicon microcantilever beams is 2.885 ± 0.408 GPa. The measured average value of Young’s modulus, 164 ± 1.2 GPa, falls within the theoretical bounds. The average fracture tensile strength is 1.36 GPa with a standard deviation of 0.14 GPa, and the Weibull modulus is 10.4 -11.7, respectively. The tensile testing of 40 specimens on failure results in a recommendation for design that the nominal strain be maintained below 0.0057.展开更多
Operating conditions strongly affect the yield and quality of polysilicon in a polysilicon fluidized bed.In this study,a new model of polysilicon fluidized bed was established using the Euler-Euler model coupled with ...Operating conditions strongly affect the yield and quality of polysilicon in a polysilicon fluidized bed.In this study,a new model of polysilicon fluidized bed was established using the Euler-Euler model coupled with population balance model(PBM),which was combined with fluid flow,heat,and mass transfer models,while considering the scavenging effect of silicon fines.The effects of different operating conditions on the deposition and formation rates of silicon fines were investigated.Results show that the model can correctly describe the particle growth process in the fluidized bed of polysilicon.The silicon fines and the interphase velocity difference show"N"-and"M"-shaped distributions along the axial direction,respectively.The particle temperature and concentration near the wall are higher than those in the central region.The decomposition of silane in the bottom region of the bed is dominated by het-erogeneous deposition.The scavenging of silicon fines occurs in the dilute-phase region.The effects of operating conditions,i.e.inlet gas temperature,silane composition,and gas velocity,on the reactor performance were also explored comprehensively.Increasing the inlet gas composition and velocity enhances the formation rates of solid silicon and fines.Increasing the inlet gas temperature promotes the growth of solid silicon and inhibits the formation of silicon fines.High fluidization ratio,low inlet silane concentration,and high inlet gas temperature enhance the selectivity of silicon growth.展开更多
The success of microelectromechanical systems (MEMS) as a key technology in the 21st century depends in no small part on the solution of materials issues associated with the design and fabrication of complex MEMS devi...The success of microelectromechanical systems (MEMS) as a key technology in the 21st century depends in no small part on the solution of materials issues associated with the design and fabrication of complex MEMS devices. The reliable mechanical properties of these thin films are critical to the safety and functioning of these microdevices and should be accurately determined. In order to accomplish a reliable mechanical design of MEMS, a new microtensile test device using a magnetic-solenoid force actuator was developed to evaluate the mechanical properties of microfabricated polysilicon thin films with dimensions of 100—660 mm length, 20—200 mm width, and 2.4 mm thickness. It was found that the measured average value of Young抯 modulus, 164±1.2 GPa, falls within the theoretical bounds. The average fracture strength is 1.36 GPa with a standarddeviation of 0.14 GPa, and the Weibull modulus is 10.4—11.7, respectively. Statistical analysis of the specimen size effect on the tensile strength predicated the size effect on the length, the surface area and the volume of the specimens due tomicrostructural and dimensional constraints. The fracturestrength increases with the increase of the ratio of surfacearea to volume. In such cases the size effect can be tracedback to the ratio of surface area to volume as the governing parameter. The test data account for the uncertainties inmechanical properties and may be used in the future reliability design of polysilicon MEMS. The testing of 40specimens to failure results in a recommendation for design that the nominal strain be maintained below 0.0057.展开更多
Both the size of the components and the separation between them in some microelectromechanical systems (MEMS) are already in the sub-micrometer regime, where quantum mechanical effects such as the Casimir effect will ...Both the size of the components and the separation between them in some microelectromechanical systems (MEMS) are already in the sub-micrometer regime, where quantum mechanical effects such as the Casimir effect will need to be considered. This paper theoretically analyzes the roughness, electrical conductivity, and temperature corrections due to the Casimir force between two parallel polysilicon plates. The theoretical results show that the combined effects of roughness, conductivity and temperature cause a maximum relative error of the Casimir force per unit area of 26.2% between parallel polysilicon plates separated by 1 μm. Therefore, the surface roughness and finite conductivity corrections should be taken into account when calculating precise Casimir forces with separations on the order of 1 μm.展开更多
The elastic modulus is a very important mechanical property in micromachined structures. Several design issues such as resonant frequencies and stiffness in the micromachined structures are related to the elastic modu...The elastic modulus is a very important mechanical property in micromachined structures. Several design issues such as resonant frequencies and stiffness in the micromachined structures are related to the elastic modulus. In addition, the accuracy of results from finite element models is highly dependent upon the elastic modulus. In this study, the Young modulus of micromachined thin polysilicon films has been investigated with a new tensile test machine using a magnetic-solenoid force actuator with linear response, low hysteresis, no friction and direct electrical control. The tensile test results show that the measured average value of Young modulus for a typical sample, (164±1.2) GPa, falls within the theoretical bounds of the texture model. These results will provide more reliable design of polysilicon microelectromechanical systems (MEMS).展开更多
文摘The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric precision in the determination of the microcantilever beam deflection. The method is described clearly. In the deflection of microbeams, the influence of the indenter tip pushing into the top of the microbeams and the curvature across its width must be considered. The measurements were made on single-layer, micro-thick, several kinds of width and length polysilicon beams that were fabricated using conventional integrated circuit (IC) fabrication techniques. The elastic of a polysilicon microcantilever beam will vary linearly with the force and the deformation is thought to be elastic. Furthermore, it suggests that Young modulus of the beam can be determined from the slope of this linear relation. From the load deflection data acquired during bending the mechanical properties of the thin films were determined. Measured Young modulus is 137 GPa with approximately a ±2.9%～±6.3% difference in Young modulus.
文摘In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing(P/E)operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio(Ion/Ioff ratio)of the device with a tunneling layer thickness of 85 nm are 0.01 cm^2·V^-1·s^-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of±60 V.
基金Supported by National Natural Science Foundation of China
文摘A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.
文摘A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC's 0.18 μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge (ESD) current without occupying extra layout area. TLP current-voltage (I-V) measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of con- ventional MLSCR's. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 μm2 layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.
基金Project(12C0379) supported by Scientific Research Fund of Hunan Province,China
文摘Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.
文摘A systematic research on the pyrolysis process of polymethysilicone （SAR-2） and the thermostability of the pyrolysis residue was made by the thermogravimetric analysis, DTA and infrared spectroscopy.The experimental results indicate that the pyrolysis residue of SAR-2 converted into the amorphous SiCxO4-x phase above 900 ℃,the residue at 1200 ℃ is the most thermostable and antioxidant.It is suitable to be used as polysilicone preceramic.
基金support from the Scientific Research Fund of Liaoning Provincial Education Department for Colleges and Universities of China (No. 2008T229)
文摘Non-thermal plasma at atmospheric pressure was explored for the preparation ofpolysilicon from SiCl4.The power supply sources of positive pulse and alternating current （8 kHzand 100 kHz） were compared for polysilicon preparation.The samples prepared by using the100 kHz power source were crystalline silicon.The effects of H2 and SiCl4 volume fractions wereinvestigated.The optical emission spectra showed that silicon species played an important role inpolysilicon
文摘A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated,in which polysilicon is sandwiched between oxide layers as a floating gate.Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed.The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing(P/E) operations at various P/E voltages are discussed.The simulated results show that present memory exhibits a large memory window of 57.5 V,and a high read current on/off ratio of ≈ 10~3.Compared with the reported experimental results,these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects,which shows great promise in device designing and practical application.
基金Project supported by Program for New Century Excellent Talents in University,the National Natural Science Founda-tion of China(Nos.50135040and50475124),the Excellent Young Teachers Program of MOE of China,the Foundation forthe Author of National Excellent Doctoral Dissertation of China(No.200330)and the National Basic Research Programof China(No.2004CB619305).
文摘In order to accomplish reliable mechanical design of MEMS, the infuences of surface roughness and octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on the mechani- cal properties of micromachined polysilicon flms for MEMS are investigated. Surface efect on the fracture properties of micromachined polysilicon flms is evaluated with a new microtensile testing method using a magnet-coil force actuator. Statistical analysis of the surface roughness efects on the tensile strength predicated the surface roughness characterization of polysilicon flms being tested and the direct relation of the mechanical properties with the surface roughness features. The fracture strength decreases with the increase of the surface roughness. The octadecyltrichlorosi- lane self-assembled monolayers coating leads to an increase of the average fracture strength up to 32.46%. Surface roughness and the hydrophobic properties of specimen when coated with OTS flms are the two main factors infuencing the tensile strength of micromachined polysilicon flms for MEMS.
基金Project supported by the Micro/Nano Science and Technology Center Science Founation of Jiangsu Province (Nos.BK2002147 and 02KJA460001) the Excellent Young Teachers Program of MOE of China and the National Natural ScienceFoundation of China (No. 50135040).
文摘The bending strength of microfabricated polysilicon beams was measured by beam bending using a nanoindenter. Also, the tensile strength of microfabricated polysilicon thin ?lms was measured by tensile testing with a new microtensile test device. It was found that the bending strength and tensile strength of polysilicon microstructures exerts size e?ect on the size of the specimens. In such cases, the size e?ect can be traced back to the ratio of surface area to volume as the governing parameter. A statistical analysis of the bending strength for various specimen sizes shows that the average bending strength of polysilicon microcantilever beams is 2.885 ± 0.408 GPa. The measured average value of Young’s modulus, 164 ± 1.2 GPa, falls within the theoretical bounds. The average fracture tensile strength is 1.36 GPa with a standard deviation of 0.14 GPa, and the Weibull modulus is 10.4 -11.7, respectively. The tensile testing of 40 specimens on failure results in a recommendation for design that the nominal strain be maintained below 0.0057.
基金support by the Science and Technology Planning Project of the Science and Technology Department of Yunnan Province (grant No.202002AB080002 and 202202AB080014).
文摘Operating conditions strongly affect the yield and quality of polysilicon in a polysilicon fluidized bed.In this study,a new model of polysilicon fluidized bed was established using the Euler-Euler model coupled with population balance model(PBM),which was combined with fluid flow,heat,and mass transfer models,while considering the scavenging effect of silicon fines.The effects of different operating conditions on the deposition and formation rates of silicon fines were investigated.Results show that the model can correctly describe the particle growth process in the fluidized bed of polysilicon.The silicon fines and the interphase velocity difference show"N"-and"M"-shaped distributions along the axial direction,respectively.The particle temperature and concentration near the wall are higher than those in the central region.The decomposition of silane in the bottom region of the bed is dominated by het-erogeneous deposition.The scavenging of silicon fines occurs in the dilute-phase region.The effects of operating conditions,i.e.inlet gas temperature,silane composition,and gas velocity,on the reactor performance were also explored comprehensively.Increasing the inlet gas composition and velocity enhances the formation rates of solid silicon and fines.Increasing the inlet gas temperature promotes the growth of solid silicon and inhibits the formation of silicon fines.High fluidization ratio,low inlet silane concentration,and high inlet gas temperature enhance the selectivity of silicon growth.
基金This work was supported by the Doctoral Science Fundation of China (Grant No. 2000000338).
文摘The success of microelectromechanical systems (MEMS) as a key technology in the 21st century depends in no small part on the solution of materials issues associated with the design and fabrication of complex MEMS devices. The reliable mechanical properties of these thin films are critical to the safety and functioning of these microdevices and should be accurately determined. In order to accomplish a reliable mechanical design of MEMS, a new microtensile test device using a magnetic-solenoid force actuator was developed to evaluate the mechanical properties of microfabricated polysilicon thin films with dimensions of 100—660 mm length, 20—200 mm width, and 2.4 mm thickness. It was found that the measured average value of Young抯 modulus, 164±1.2 GPa, falls within the theoretical bounds. The average fracture strength is 1.36 GPa with a standarddeviation of 0.14 GPa, and the Weibull modulus is 10.4—11.7, respectively. Statistical analysis of the specimen size effect on the tensile strength predicated the size effect on the length, the surface area and the volume of the specimens due tomicrostructural and dimensional constraints. The fracturestrength increases with the increase of the ratio of surfacearea to volume. In such cases the size effect can be tracedback to the ratio of surface area to volume as the governing parameter. The test data account for the uncertainties inmechanical properties and may be used in the future reliability design of polysilicon MEMS. The testing of 40specimens to failure results in a recommendation for design that the nominal strain be maintained below 0.0057.
基金Supported by the Doctoral Science Foundation of China(No. 2 0 0 0 0 0 0 338)
文摘Both the size of the components and the separation between them in some microelectromechanical systems (MEMS) are already in the sub-micrometer regime, where quantum mechanical effects such as the Casimir effect will need to be considered. This paper theoretically analyzes the roughness, electrical conductivity, and temperature corrections due to the Casimir force between two parallel polysilicon plates. The theoretical results show that the combined effects of roughness, conductivity and temperature cause a maximum relative error of the Casimir force per unit area of 26.2% between parallel polysilicon plates separated by 1 μm. Therefore, the surface roughness and finite conductivity corrections should be taken into account when calculating precise Casimir forces with separations on the order of 1 μm.
基金Supported by the Doctoral Science Foundation of China(No.2 0 0 0 0 0 0 338)
文摘The elastic modulus is a very important mechanical property in micromachined structures. Several design issues such as resonant frequencies and stiffness in the micromachined structures are related to the elastic modulus. In addition, the accuracy of results from finite element models is highly dependent upon the elastic modulus. In this study, the Young modulus of micromachined thin polysilicon films has been investigated with a new tensile test machine using a magnetic-solenoid force actuator with linear response, low hysteresis, no friction and direct electrical control. The tensile test results show that the measured average value of Young modulus for a typical sample, (164±1.2) GPa, falls within the theoretical bounds of the texture model. These results will provide more reliable design of polysilicon microelectromechanical systems (MEMS).
