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Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors
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作者 荀涛 牛昕玥 +7 位作者 王朗宁 张斌 姚金妹 易木俣 杨汉武 侯静 刘金亮 张建徳 《Chinese Optics Letters》 SCIE EI CAS CSCD 2024年第1期113-122,共10页
Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ... Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability.Over the past several years,benefitting from the sustainable innovations in laser technology and the significant progress in materials technology,megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices.Here,we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode,including the mechanism,system architecture,critical technology,and experimental demonstration of the proposed high-power photonic microwave sources.The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed. 展开更多
关键词 high-power photonic microwave wide bandgap photoconductive semiconductor devices linear modulation multi-parameter adjustable microwave generation multi-channel power synthesis
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