This paper reports a low-damage interface treatment process for Al N/Ga N high electron mobility transistor(HEMT)and demonstrates the excellent power characteristics of radio-frequency(RF) enhancementmode(E-mode) Al N...This paper reports a low-damage interface treatment process for Al N/Ga N high electron mobility transistor(HEMT)and demonstrates the excellent power characteristics of radio-frequency(RF) enhancementmode(E-mode) Al N/Ga N HEMT. An RF E-mode device with 2.9-nm-thick Al N barrier layer fabricated by remote plasma oxidation(RPO) treatment at 300℃. The device with a gate length of 0.12-μm has a threshold voltage(Vth) of 0.5 V, a maximum saturation current of 1.16 A/mm, a high Ion/Ioff ratio of 1×108, and a 440-m S/mm peak transconductance. During continuous wave(CW) power testing, the device demonstrates that at 3.6 GHz, a power added efficiency is 61.9% and a power density is 1.38 W/mm, and at 30 GHz, a power added efficiency is 41.6% and a power density is 0.85 W/mm. Furthermore, the RPO treatment improves the mobility of RF E-mode Al N/Ga N HEMT. All results show that the RPO processing method has good applicability to scaling ultrathin barrier E-mode Al N/Ga N HEMT for 5G compliable frequency ranging from sub-6 GHz to Ka-band.展开更多
A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum po...A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.展开更多
A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（A...A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.展开更多
A novel design and optimization method for distributed amplifiers(DAs)is proposed to make the circuit design more convenient and efficient.This method combines artificial intelligence(AI)optimization with manual desig...A novel design and optimization method for distributed amplifiers(DAs)is proposed to make the circuit design more convenient and efficient.This method combines artificial intelligence(AI)optimization with manual design by two loops,i.e.,outer manual loop and inner AI loop.The layout design is followed by AI optimization to take more influencing factors such as parasitic effect into account for the practicability.A DA with three gain cells is designed and optimized in a standard 0.18μm complementary metal-oxide-semiconductor(CMOS)technology to verify the proposed method.With a chip area of only 0.55 mm2,the DA provides 9.8 dB average forward gain from 1 to 15.2 GHz.The output power at 1 dB output compression point is more than 7.7 dBm in the 2-14 GHz frequency band and the peak power-added efficiency(PAE)is 10.6%.The measurement results validate the proposed method as a robust DA design procedure for improving circuit performance and design efficiency.展开更多
An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity cur...An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity current gain cut-off frequency (fT) of 22 GHz and a maximum oscillation frequency (fmax) of 65 GHz. The GaN HEMT device with a gate width of 1 mm exhibited a continuous-wave saturated output power of 10.2 W and a linear gain of 14.8 dB at 8 GHz, and successfully achieved the power-added efficiency (PAE) as high as 69.2%, which is very suitable for X-band power applications.展开更多
基金Project supported by the Fundamental Research Funds for the National Key Research and Development Program, China (Grant No. 2020YFB1807403)the National Natural Science Foundation of China (Grant Nos. 62174125, 62188102, and 62131014)。
文摘This paper reports a low-damage interface treatment process for Al N/Ga N high electron mobility transistor(HEMT)and demonstrates the excellent power characteristics of radio-frequency(RF) enhancementmode(E-mode) Al N/Ga N HEMT. An RF E-mode device with 2.9-nm-thick Al N barrier layer fabricated by remote plasma oxidation(RPO) treatment at 300℃. The device with a gate length of 0.12-μm has a threshold voltage(Vth) of 0.5 V, a maximum saturation current of 1.16 A/mm, a high Ion/Ioff ratio of 1×108, and a 440-m S/mm peak transconductance. During continuous wave(CW) power testing, the device demonstrates that at 3.6 GHz, a power added efficiency is 61.9% and a power density is 1.38 W/mm, and at 30 GHz, a power added efficiency is 41.6% and a power density is 0.85 W/mm. Furthermore, the RPO treatment improves the mobility of RF E-mode Al N/Ga N HEMT. All results show that the RPO processing method has good applicability to scaling ultrathin barrier E-mode Al N/Ga N HEMT for 5G compliable frequency ranging from sub-6 GHz to Ka-band.
基金Project supported by the National Key Basic Research Program of China(Grant No.2011CBA00606)Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915)the National Natural Science Foundation of China(Grant No.61334002)
文摘A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204086)
文摘A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.
基金the National Natural Science Foundation of China(No.61106021)the Natural Science Foundation of Jiangsu Province(No.BK20161072)the Research Fund of Nanjing University of Posts and Telecommunications(No.NY218051)
文摘A novel design and optimization method for distributed amplifiers(DAs)is proposed to make the circuit design more convenient and efficient.This method combines artificial intelligence(AI)optimization with manual design by two loops,i.e.,outer manual loop and inner AI loop.The layout design is followed by AI optimization to take more influencing factors such as parasitic effect into account for the practicability.A DA with three gain cells is designed and optimized in a standard 0.18μm complementary metal-oxide-semiconductor(CMOS)technology to verify the proposed method.With a chip area of only 0.55 mm2,the DA provides 9.8 dB average forward gain from 1 to 15.2 GHz.The output power at 1 dB output compression point is more than 7.7 dBm in the 2-14 GHz frequency band and the peak power-added efficiency(PAE)is 10.6%.The measurement results validate the proposed method as a robust DA design procedure for improving circuit performance and design efficiency.
基金supported by the Knowledge Innovation Program of Chinese Academy of Sciences
文摘An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity current gain cut-off frequency (fT) of 22 GHz and a maximum oscillation frequency (fmax) of 65 GHz. The GaN HEMT device with a gate width of 1 mm exhibited a continuous-wave saturated output power of 10.2 W and a linear gain of 14.8 dB at 8 GHz, and successfully achieved the power-added efficiency (PAE) as high as 69.2%, which is very suitable for X-band power applications.
