The electrocatalytic oxidation of biomass-derived furfural(FF)feedstocks into 2-furoic acid(FA)holds immense industrial potential in optics,cosmetics,polymers,and food.Herein,we fabricated Co O/Ni O/nickel foam(NF)and...The electrocatalytic oxidation of biomass-derived furfural(FF)feedstocks into 2-furoic acid(FA)holds immense industrial potential in optics,cosmetics,polymers,and food.Herein,we fabricated Co O/Ni O/nickel foam(NF)and Cu_(2)O/Ni O/NF electrodes via in situ pulsed laser irradiation in liquids(PLIL)for the bifunctional electrocatalysis of oxygen evolution reaction(OER)and furfural oxidation reaction(FOR),respectively.Simultaneous oxidation of NF surface to NiO and deposition of CoO and/or Cu_(2)O on NF during PLIL offer distinct advantages for enhancing both the OER and FOR.CoO/NiO/NF electrocatalyst provides a consistently low overpotential of~359 m V(OER)at 10 m A/cm^(2),achieving the maximum FA yield(~16.37 m M)with 61.5%selectivity,79.5%carbon balance,and a remarkable Faradaic efficiency of~90.1%during 2 h of FOR at 1.43 V(vs.reversible hydrogen electrode).Mechanistic pathway via in situ electrochemical-Raman spectroscopy on CoO/NiO/NF reveals the involvement of phase transition intermediates(NiOOH and CoOOH)as surface-active centers during electrochemical oxidation.The carbonyl carbon in FF is attacked by hydroxyl groups to form unstable hydrates that subsequently undergo further oxidation to yield FA products.This method holds promise for large-scale applications,enabling simultaneous production of renewable building materials and fuel.展开更多
The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned w...The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.展开更多
This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been ...This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.展开更多
Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make i...Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.展开更多
Polycrystalline Si(poly-Si)-based passivating contacts are promising candidates for high-efficiency crystalline Si solar cells.We show that nanosecond-scale pulsed laser melting(PLM)is an industrially viable technique...Polycrystalline Si(poly-Si)-based passivating contacts are promising candidates for high-efficiency crystalline Si solar cells.We show that nanosecond-scale pulsed laser melting(PLM)is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit.We demonstrate that conventionally doped,hole-selective poly-Si/SiO_(x)contacts that provide poor surface passivation of c-Si can be replaced with Ga-or B-doped contacts based on non-equilibrium doping.We overcome the solid solubility limit for both dopants in poly-Si by rapid cooling and recrystallization over a timescale of∼25 ns.We show an active Ga dopant concentration of∼3×10^(20)cm^(−3)in poly-Si which is six times higher than its solubility limit in c-Si,and a B dopant concentration as high as∼10^(21) cm^(−3).We measure an implied open-circuit voltage of 735 mV for Ga-doped poly-Si/SiO_(x)contacts on Czochralski Si with a low contact resistivity of 35.5±2.4 mΩcm^(2).Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p-n junction that contributes to the low contact resistivity.Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high-efficiency devices.展开更多
We develop a new synthetical model of high-power pulsed laser ablation,which considers the dynamicabsorptance,vaporization,and plasma shielding.And the corresponding heat conduction equations with the initial andbound...We develop a new synthetical model of high-power pulsed laser ablation,which considers the dynamicabsorptance,vaporization,and plasma shielding.And the corresponding heat conduction equations with the initial andboundary conditions are given.The numerical solutions are obtained under the reasonable technical parameter condi-tions by taking YBa_2Cu_3O_7 target for example.The space-dependence and time-dependence of temperature in targetat a certain laser fluence are presented,then,the transmitted intensity through plasma plume,space-dependence oftemperature and ablation rate for different laser fluences are significantly analyzed.As a result,the satisfactorily goodagreement between our numerical results and experimental results indicates that the influences of the dynamic absorp-tance,vaporization,and plasma shielding cannot be neglected.Taking all the three mechanisms above simultaneouslyinto account for the first time,we cause the present model to be more practical.展开更多
Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequenc...Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.展开更多
With the development of portable electronic devices, electric vehicles, and power storage systems, the demand for rechargeable batteries with high energy density is growing rapidly [1–5]. In the field of lithium-ion ...With the development of portable electronic devices, electric vehicles, and power storage systems, the demand for rechargeable batteries with high energy density is growing rapidly [1–5]. In the field of lithium-ion batteries, the unconventional anode materials such as tin, silicon, metallic lithium, and transition-metal oxides have been extensively studied due to the high capacity, but they are still inapplicable because of the low initial coulombic efficiency(ICE) and/or the poor cycling stability [5–9].展开更多
This review provides a discussion of the current state of research on sp-carbon chains synthesized by pulsed laser ablation in liquid.In recent years,pulsed laser ablation in liquid(PLAL)has been widely employed for p...This review provides a discussion of the current state of research on sp-carbon chains synthesized by pulsed laser ablation in liquid.In recent years,pulsed laser ablation in liquid(PLAL)has been widely employed for polyynes synthesis thanks to its flexibility with varying laser parameters,solvents,and targets.This allows the control of sp-carbon chains properties as yield,length,termination and stability.Although many reviews related to PLAL have been published,a comprehensive work reporting the current status and advances related to the synthesis of sp-carbon chains by PLAL is still missing.Here we first review the principle of PLAL and the mechanisms of formation of sp-carbon chains.Then we discuss the role of laser fluence(i.e.energy density),solvent,and target for sp-carbon chains synthesis.Lastly,we report the progress related to the prolonged stability of sp-carbon chains by PLAL encapsulated in polymeric matrices.This review will be a helpful guide for researchers interested in synthesizing sp-carbon chains by PLAL.展开更多
Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morpho...Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.展开更多
The 2024 aluminum alloy is used extensively in the aircraft and aerospace industries because of its excellent mechanical properties.However,the weldability of 2024 aluminum alloy is generally low because it contains a...The 2024 aluminum alloy is used extensively in the aircraft and aerospace industries because of its excellent mechanical properties.However,the weldability of 2024 aluminum alloy is generally low because it contains a high number of solutes,such as copper(Cu),magnesium(Mg),and manganese(Mn),causing solidification cracking.If high speed welding of 2024 aluminum alloy without the use of filler is achieved,the applicability of 2024 aluminum alloys will expand.Grain refining is one of the methods used to prevent solidification cracking in weld metal,although it has never been achieved for high-speed laser welding of 2024 aluminum alloy without filler.Here,we propose a short-pulsed,laser-induced,grain-refining method during continuous wave laser welding without filler.Bead-on-plate welding was performed on a 2024-T3 aluminum alloy at a welding speed of 1 m min−1 with a single mode fiber laser at a wavelength of 1070 nm and power of 1 kW.Areas in and around the molten pool were irradiated with nanosecond laser pulses at a wavelength of 1064 nm,pulse width of 10 ns,and pulse energy of 430 mJ.The grain-refinement effect was confirmed when laser pulses were irradiated on the molten pool.The grain-refinement region was formed in a semicircular shape along the solid–liquid interface.Results of the vertical section indicate that the grain-refinement region reached a depth of 1 mm along the solid–liquid interface.The Vickers hardness test results demonstrated that the hardness increased as a result of grain refinement and that the progress of solidification cracking was suppressed in the grain refinement region.展开更多
The flat plane of small surface roughness below 0.1μm average roughness was obtained for monocrystalline diamond by nanosecond pulsed laser irradiation of 1060 nm and post-process acid cleaning,at a laser fluence aro...The flat plane of small surface roughness below 0.1μm average roughness was obtained for monocrystalline diamond by nanosecond pulsed laser irradiation of 1060 nm and post-process acid cleaning,at a laser fluence around the material removal threshold value.The glossy and flat plane at the bottom of the micro-groove was parallel to the top surface of the specimen,although the round beam of Gaussian mode was irradiated in the direction perpendicular to the top surface of specimen.The square beam of top-hat mode produced a shallower micro-groove with a wider,flatter bottom compared with the round beam in Gaussian mode.The creation method of the flat plane with small surface roughness was discussed in the arrangement strategy of linear micro-grooving by the square beam of top-hat mode.Normal side-by-side repetition of linear micro-grooving did not create a flat plane with constant depth.Therefore,a two-step scanning method was proposed in order to overcome the problem in the normal side-by-side repetition of liner micro-grooving.Non-removal areas were partly retained between the processing lines in the first step,and the laser scanning was conducted on the retained area in the second step.The newly proposed two-step scanning method was practical and useful to create a widely flat plane with small surface roughness,and the two-step scanning method provided superior control over the micro-groove depth.This proposed method can reduce the surface roughness in addition to the shape creation of monocrystalline diamond,and it can be used as a high-quality micro-shape fabrication method of monocrystalline diamond.展开更多
We investigate the process of pulsed laser cooling using a self-constructed molecular dynamics simulation(MDSimulation)program.We simulate the Doppler cooling process and pulsed laser Doppler cooling process of a sing...We investigate the process of pulsed laser cooling using a self-constructed molecular dynamics simulation(MDSimulation)program.We simulate the Doppler cooling process and pulsed laser Doppler cooling process of a single^(40)Ca^(+)ion,and the comparison with the experimental results shows that this self-constructed MD-Simulation program works well in the weak laser intensity situation.Furthermore,we analyze the pulsed laser Doppler cooling process of a single^(27)Al^(+)ion.This program can be used to analyze the molecular dynamic process of various situations of Doppler cooling in an ion trap,which could give predictions and experimental guidance.展开更多
<div style="text-align:justify;"> In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity...<div style="text-align:justify;"> In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation. </div>展开更多
This paper focuses on the preparation of a new extended set of calibrations of cooling rate(fictive temperature)in fused silica determined by inelastic light scattering and its subsequent use to characterize the local...This paper focuses on the preparation of a new extended set of calibrations of cooling rate(fictive temperature)in fused silica determined by inelastic light scattering and its subsequent use to characterize the local cooling rate distribution in ultra-short pulsed(USP)laser modification.In order to determine the thermal history(e.g.cooling rate and fictive temperature)of fused silica,high-resolution inelastic light-scattering experiments(Raman and Brillouin spectroscopy)were investigated.Calibrations were performed and compared to the existing literature to quantify structural changes due to a change of fictive temperature.Compared to existing calibrations,this paper provides an extension to lower and higher cooling rates.Using this new set of calibrations,we characterized a USP laser modification in fused silica and calculated the local fictive temperature distribution.An equation relating the fictive temperature(Tf)to cooling rates is given.A maximum cooling rate of 3000 K min-1 in the glass transition region around 1200℃ was deduced from the Raman analysis.The Brillouin observations are sensitive to both the thermal history and the residual stress.By comparing the Raman and Brillouin observations,we extracted the local residual stress distribution with high spatial resolution.For the first time,combined Raman and Brillouin inelastic light scattering experiments show the local distribution of cooling rates and residual stresses(detailed behavior of the glass structure)in the interior and the surrounding of an USP laser modified zone.展开更多
In the present paper, Copper Phthalocyanine (CuPc) thin films were deposited on glass and silicon substrate by thermal evaporation and pulsed laser deposition (PLD) methods. CuPc thin films prepared at different annea...In the present paper, Copper Phthalocyanine (CuPc) thin films were deposited on glass and silicon substrate by thermal evaporation and pulsed laser deposition (PLD) methods. CuPc thin films prepared at different annealing temperatures (298, 323, 348, 373, 423 K) respectively. The structure and surface morphology of CuPc in powder and thin films forms prepared by two methods were studied using Energy dispersive X-ray (EDX), X-ray f§lt;span§gt;lorescence (XRF), X-ray§lt;/span§gt;diffraction (XRD), Atomic force microscope (AFM), and Scanning electron microscope (SEM). It showed that there was a change and enhancement in the crystallinity and surface morphology due to change in the annealing temperature (T§lt;sub§gt;a§lt;/sub§gt;). The purpose of our work is to find the optimal temperature for which the film produces best structural properties for CuPc thin film to produce organic field effect transistor. Analysis of X-ray diffraction patterns of CuPc in powder form showed that it had an α-poly-crystalline phase with monoclinic structure, with preferentially oriented (100) plane transform to §lt;i§gt;β§lt;/i§gt;-single crystalline morestable structure at different annealing temperatures.展开更多
This paper reports on the ablation process of a pure Ti solid target immersed in a C-enriched acetone solution, leading to the production of titanium carbide (TiC) and Ti-C core-shell nanostructures. The used route of...This paper reports on the ablation process of a pure Ti solid target immersed in a C-enriched acetone solution, leading to the production of titanium carbide (TiC) and Ti-C core-shell nanostructures. The used route of synthesis is generally called pulsed laser ablation in liquid (PLAL). The presence of carbon structures in the solution contributed to the carbon content in the produced Ti-based nanomaterials. The atomic composition of the produced nanostructures was analyzed using SEM-EDS, while TEM micrographs revealed the formation of spherical TiC and core-shell nanostructures ranging from 40 to 100 nm. The identification of atomic planes by HRTEM confirmed a 10 nm diameter C-shell with a graphite structure surrounding the Ti-core. Raman spectroscopy allowed for the identification of D and G peaks for graphite and a Raman signal at 380 and 600 cm<sup>−1</sup>, assigned to TiC. The results contribute to the state-of-the-art production of TiC and Ti-C core-shell nanostructures using the PLAL route.展开更多
Advances in energy conversion and storage technologies,such as water electrolyzers,rechargeable metal-air batteries,and fuel cells,have enabled a renewable and sustainable future.The efficiency and effectiveness of th...Advances in energy conversion and storage technologies,such as water electrolyzers,rechargeable metal-air batteries,and fuel cells,have enabled a renewable and sustainable future.The efficiency and effectiveness of these technologies largely relies on the physicochemical properties of the functional materials used,specifically electrocatalysts.Pulsed laser deposition(PLD)is a powerful technique for the synthesis of thin film materials,offering a unique platform for understanding electrochemical reaction mechanisms and searching for low-cost and high-performance electrocatalysts.In this mini-review,we present the latest studies in which thin film materials(mainly focused on perovskite oxide thin films)via PLD have been actively utilized in the field of electrocatalysis.The fundamentals and advantages of PLD in the synthesis of thin films are discussed first.Then,emerging types of thin films associated with electrochemical applications are presented.Special emphasis is placed on material design methods to reveal the reaction mechanisms and establish the structure–performance relationships by understanding structural variations in precatalysts and surface reconstruction under reaction conditions.Finally,we discuss remaining challenges and future perspectives.展开更多
基金supported by the Korea Basic Science Institute(National research Facilities and Equipment Center)grant funded by the Ministry of Education(2019R1A6C1010042,2021R1A6C103A427)the financial support from the National Research Foundation of Korea(NRF)(2022R1A2C2010686,2022R1A4A3033528,2021R1I1A1A01060380,2021R1C1C2010726,2019H1D3A1A01071209)。
文摘The electrocatalytic oxidation of biomass-derived furfural(FF)feedstocks into 2-furoic acid(FA)holds immense industrial potential in optics,cosmetics,polymers,and food.Herein,we fabricated Co O/Ni O/nickel foam(NF)and Cu_(2)O/Ni O/NF electrodes via in situ pulsed laser irradiation in liquids(PLIL)for the bifunctional electrocatalysis of oxygen evolution reaction(OER)and furfural oxidation reaction(FOR),respectively.Simultaneous oxidation of NF surface to NiO and deposition of CoO and/or Cu_(2)O on NF during PLIL offer distinct advantages for enhancing both the OER and FOR.CoO/NiO/NF electrocatalyst provides a consistently low overpotential of~359 m V(OER)at 10 m A/cm^(2),achieving the maximum FA yield(~16.37 m M)with 61.5%selectivity,79.5%carbon balance,and a remarkable Faradaic efficiency of~90.1%during 2 h of FOR at 1.43 V(vs.reversible hydrogen electrode).Mechanistic pathway via in situ electrochemical-Raman spectroscopy on CoO/NiO/NF reveals the involvement of phase transition intermediates(NiOOH and CoOOH)as surface-active centers during electrochemical oxidation.The carbonyl carbon in FF is attacked by hydroxyl groups to form unstable hydrates that subsequently undergo further oxidation to yield FA products.This method holds promise for large-scale applications,enabling simultaneous production of renewable building materials and fuel.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61574171, 61704127, 11875229,51872251, and 12027813)。
文摘The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2022YFA1603903 and 2021YFA0718700)the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101340002)+3 种基金the National Natural Science Foundation of China(Grant Nos.61971415,51972012,11927808,119611410,11961141008,and 12274439)the Strategic Priority Research Program(B)of Chinese Academy of Sciences(Grant No.XDB25000000)Beijing Natural Science Foundation(Grant No.Z190008)Basic Research Youth Team of Chinese Academy of Sciences(Grant No.2022YSBR-048).
文摘This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA0718700)the National Natural Science Foundation of China(Grant No.12174347)+1 种基金the Synergetic Extreme Condition User Facility(SECUF)the Center for Materials Genome。
文摘Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.
基金the National Renewable Energy Laboratory,operated by Alliance for Sustainable Energy,LLC,for the U.S.Department of Energy(DOE)under Contract No.DE-AC36-08GO28308.
文摘Polycrystalline Si(poly-Si)-based passivating contacts are promising candidates for high-efficiency crystalline Si solar cells.We show that nanosecond-scale pulsed laser melting(PLM)is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit.We demonstrate that conventionally doped,hole-selective poly-Si/SiO_(x)contacts that provide poor surface passivation of c-Si can be replaced with Ga-or B-doped contacts based on non-equilibrium doping.We overcome the solid solubility limit for both dopants in poly-Si by rapid cooling and recrystallization over a timescale of∼25 ns.We show an active Ga dopant concentration of∼3×10^(20)cm^(−3)in poly-Si which is six times higher than its solubility limit in c-Si,and a B dopant concentration as high as∼10^(21) cm^(−3).We measure an implied open-circuit voltage of 735 mV for Ga-doped poly-Si/SiO_(x)contacts on Czochralski Si with a low contact resistivity of 35.5±2.4 mΩcm^(2).Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p-n junction that contributes to the low contact resistivity.Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high-efficiency devices.
基金National Natural Science Foundation of China under Grant Nos.10675048 and 10604017the Natural Science Foundation of Hubei Province under Grant No.2001ABB099the Sunshine Foundation of Wuhan City under Grant No.20045006071-40
文摘We develop a new synthetical model of high-power pulsed laser ablation,which considers the dynamicabsorptance,vaporization,and plasma shielding.And the corresponding heat conduction equations with the initial andboundary conditions are given.The numerical solutions are obtained under the reasonable technical parameter condi-tions by taking YBa_2Cu_3O_7 target for example.The space-dependence and time-dependence of temperature in targetat a certain laser fluence are presented,then,the transmitted intensity through plasma plume,space-dependence oftemperature and ablation rate for different laser fluences are significantly analyzed.As a result,the satisfactorily goodagreement between our numerical results and experimental results indicates that the influences of the dynamic absorp-tance,vaporization,and plasma shielding cannot be neglected.Taking all the three mechanisms above simultaneouslyinto account for the first time,we cause the present model to be more practical.
基金partially supported by the Scientific Research (No. 16K06268)the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan
文摘Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.
基金supported by the Key Research and Development of Ministry of Science and Technology of China(No.2018YFE0202601)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LTY20E010001)。
文摘With the development of portable electronic devices, electric vehicles, and power storage systems, the demand for rechargeable batteries with high energy density is growing rapidly [1–5]. In the field of lithium-ion batteries, the unconventional anode materials such as tin, silicon, metallic lithium, and transition-metal oxides have been extensively studied due to the high capacity, but they are still inapplicable because of the low initial coulombic efficiency(ICE) and/or the poor cycling stability [5–9].
基金funding from the European Research Council(ERC)under the European Union’s Horizon 2020 research and innovation program ERC Consolidator Grant(ERC Co G2016 Esp LORE grant agreement No.724610,website:www.esplore.polimi.it)
文摘This review provides a discussion of the current state of research on sp-carbon chains synthesized by pulsed laser ablation in liquid.In recent years,pulsed laser ablation in liquid(PLAL)has been widely employed for polyynes synthesis thanks to its flexibility with varying laser parameters,solvents,and targets.This allows the control of sp-carbon chains properties as yield,length,termination and stability.Although many reviews related to PLAL have been published,a comprehensive work reporting the current status and advances related to the synthesis of sp-carbon chains by PLAL is still missing.Here we first review the principle of PLAL and the mechanisms of formation of sp-carbon chains.Then we discuss the role of laser fluence(i.e.energy density),solvent,and target for sp-carbon chains synthesis.Lastly,we report the progress related to the prolonged stability of sp-carbon chains by PLAL encapsulated in polymeric matrices.This review will be a helpful guide for researchers interested in synthesizing sp-carbon chains by PLAL.
基金Project supported by the Guizhou Provincial Science and Technology Planning Project,China(Grant No.2018-5781)the National Natural Science Foundation of China(Grant No.51762010)+1 种基金the Guizhou Provincial Science and Technology Foundation,China(Grant Nos.2020-1Y021 and 2020-1Y271)the Guizhou Provincial High-level Innovative Talents,China(Grant No.2018-4006)。
文摘Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.
基金The authors would like to thank Mr Tetsuji Kuwabara of NAC Image Technology Inc.for support of high-speed photographingThis work was supported in part by MEXT Quantum Leap Flagship Program(MEXT Q-LEAP)Grant No.JPMXS0118068348,JSPS KAKENHI Grant Nos.JP16H04247,JP16K14417,and 19K22061This work was funded in part by ImPACT Program of Council for Science,Technology and Innovation(Cabinet Office,Government of Japan).
文摘The 2024 aluminum alloy is used extensively in the aircraft and aerospace industries because of its excellent mechanical properties.However,the weldability of 2024 aluminum alloy is generally low because it contains a high number of solutes,such as copper(Cu),magnesium(Mg),and manganese(Mn),causing solidification cracking.If high speed welding of 2024 aluminum alloy without the use of filler is achieved,the applicability of 2024 aluminum alloys will expand.Grain refining is one of the methods used to prevent solidification cracking in weld metal,although it has never been achieved for high-speed laser welding of 2024 aluminum alloy without filler.Here,we propose a short-pulsed,laser-induced,grain-refining method during continuous wave laser welding without filler.Bead-on-plate welding was performed on a 2024-T3 aluminum alloy at a welding speed of 1 m min−1 with a single mode fiber laser at a wavelength of 1070 nm and power of 1 kW.Areas in and around the molten pool were irradiated with nanosecond laser pulses at a wavelength of 1064 nm,pulse width of 10 ns,and pulse energy of 430 mJ.The grain-refinement effect was confirmed when laser pulses were irradiated on the molten pool.The grain-refinement region was formed in a semicircular shape along the solid–liquid interface.Results of the vertical section indicate that the grain-refinement region reached a depth of 1 mm along the solid–liquid interface.The Vickers hardness test results demonstrated that the hardness increased as a result of grain refinement and that the progress of solidification cracking was suppressed in the grain refinement region.
基金partially supported by Osawa Scientific Studies Grants Foundation
文摘The flat plane of small surface roughness below 0.1μm average roughness was obtained for monocrystalline diamond by nanosecond pulsed laser irradiation of 1060 nm and post-process acid cleaning,at a laser fluence around the material removal threshold value.The glossy and flat plane at the bottom of the micro-groove was parallel to the top surface of the specimen,although the round beam of Gaussian mode was irradiated in the direction perpendicular to the top surface of specimen.The square beam of top-hat mode produced a shallower micro-groove with a wider,flatter bottom compared with the round beam in Gaussian mode.The creation method of the flat plane with small surface roughness was discussed in the arrangement strategy of linear micro-grooving by the square beam of top-hat mode.Normal side-by-side repetition of linear micro-grooving did not create a flat plane with constant depth.Therefore,a two-step scanning method was proposed in order to overcome the problem in the normal side-by-side repetition of liner micro-grooving.Non-removal areas were partly retained between the processing lines in the first step,and the laser scanning was conducted on the retained area in the second step.The newly proposed two-step scanning method was practical and useful to create a widely flat plane with small surface roughness,and the two-step scanning method provided superior control over the micro-groove depth.This proposed method can reduce the surface roughness in addition to the shape creation of monocrystalline diamond,and it can be used as a high-quality micro-shape fabrication method of monocrystalline diamond.
基金the National Key Research and Development Program of China(Grant No.2017YFA0304401)the National Development Project for Major Scientific Research Facility,China(Grant No.ZDYZ2012-2)+3 种基金the National Natural Science Foundation of China(Grant Nos.11774388 and 11634013)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB21030100)the CAS Youth Innovation Promotion Association(Grant Nos.2018364 and Y201963)the K.C.Wong Education Foundation(Grant No.GJTD-2019-15)。
文摘We investigate the process of pulsed laser cooling using a self-constructed molecular dynamics simulation(MDSimulation)program.We simulate the Doppler cooling process and pulsed laser Doppler cooling process of a single^(40)Ca^(+)ion,and the comparison with the experimental results shows that this self-constructed MD-Simulation program works well in the weak laser intensity situation.Furthermore,we analyze the pulsed laser Doppler cooling process of a single^(27)Al^(+)ion.This program can be used to analyze the molecular dynamic process of various situations of Doppler cooling in an ion trap,which could give predictions and experimental guidance.
文摘<div style="text-align:justify;"> In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation. </div>
基金The authors gratefully acknowledge support by the Deutsche Forschungsgemeinschaft through the Grant Nos.Ho1691/8-1 I Li2713/4-1 | Schm2115/62-1,the Graduate School in Advanced Optical Technologies(SAOT)of the Friedrich-Alexander-Universitat Erlangen-Nurnberg and the QSIL GmbH Quarzschmelze Ilmenau.
文摘This paper focuses on the preparation of a new extended set of calibrations of cooling rate(fictive temperature)in fused silica determined by inelastic light scattering and its subsequent use to characterize the local cooling rate distribution in ultra-short pulsed(USP)laser modification.In order to determine the thermal history(e.g.cooling rate and fictive temperature)of fused silica,high-resolution inelastic light-scattering experiments(Raman and Brillouin spectroscopy)were investigated.Calibrations were performed and compared to the existing literature to quantify structural changes due to a change of fictive temperature.Compared to existing calibrations,this paper provides an extension to lower and higher cooling rates.Using this new set of calibrations,we characterized a USP laser modification in fused silica and calculated the local fictive temperature distribution.An equation relating the fictive temperature(Tf)to cooling rates is given.A maximum cooling rate of 3000 K min-1 in the glass transition region around 1200℃ was deduced from the Raman analysis.The Brillouin observations are sensitive to both the thermal history and the residual stress.By comparing the Raman and Brillouin observations,we extracted the local residual stress distribution with high spatial resolution.For the first time,combined Raman and Brillouin inelastic light scattering experiments show the local distribution of cooling rates and residual stresses(detailed behavior of the glass structure)in the interior and the surrounding of an USP laser modified zone.
文摘In the present paper, Copper Phthalocyanine (CuPc) thin films were deposited on glass and silicon substrate by thermal evaporation and pulsed laser deposition (PLD) methods. CuPc thin films prepared at different annealing temperatures (298, 323, 348, 373, 423 K) respectively. The structure and surface morphology of CuPc in powder and thin films forms prepared by two methods were studied using Energy dispersive X-ray (EDX), X-ray f§lt;span§gt;lorescence (XRF), X-ray§lt;/span§gt;diffraction (XRD), Atomic force microscope (AFM), and Scanning electron microscope (SEM). It showed that there was a change and enhancement in the crystallinity and surface morphology due to change in the annealing temperature (T§lt;sub§gt;a§lt;/sub§gt;). The purpose of our work is to find the optimal temperature for which the film produces best structural properties for CuPc thin film to produce organic field effect transistor. Analysis of X-ray diffraction patterns of CuPc in powder form showed that it had an α-poly-crystalline phase with monoclinic structure, with preferentially oriented (100) plane transform to §lt;i§gt;β§lt;/i§gt;-single crystalline morestable structure at different annealing temperatures.
文摘This paper reports on the ablation process of a pure Ti solid target immersed in a C-enriched acetone solution, leading to the production of titanium carbide (TiC) and Ti-C core-shell nanostructures. The used route of synthesis is generally called pulsed laser ablation in liquid (PLAL). The presence of carbon structures in the solution contributed to the carbon content in the produced Ti-based nanomaterials. The atomic composition of the produced nanostructures was analyzed using SEM-EDS, while TEM micrographs revealed the formation of spherical TiC and core-shell nanostructures ranging from 40 to 100 nm. The identification of atomic planes by HRTEM confirmed a 10 nm diameter C-shell with a graphite structure surrounding the Ti-core. Raman spectroscopy allowed for the identification of D and G peaks for graphite and a Raman signal at 380 and 600 cm<sup>−1</sup>, assigned to TiC. The results contribute to the state-of-the-art production of TiC and Ti-C core-shell nanostructures using the PLAL route.
基金National R&D Program through the National Research Foundation of Korea(NRF)(grant nos.2022M3H4A1A01008918 and 2021M3H4A1A01002695)the Korea Research Institute of Chemical Technology Core Research Program funded by the Korea Research Council for Industrial Science and Technology(grant no.KS2222-10).
文摘Advances in energy conversion and storage technologies,such as water electrolyzers,rechargeable metal-air batteries,and fuel cells,have enabled a renewable and sustainable future.The efficiency and effectiveness of these technologies largely relies on the physicochemical properties of the functional materials used,specifically electrocatalysts.Pulsed laser deposition(PLD)is a powerful technique for the synthesis of thin film materials,offering a unique platform for understanding electrochemical reaction mechanisms and searching for low-cost and high-performance electrocatalysts.In this mini-review,we present the latest studies in which thin film materials(mainly focused on perovskite oxide thin films)via PLD have been actively utilized in the field of electrocatalysis.The fundamentals and advantages of PLD in the synthesis of thin films are discussed first.Then,emerging types of thin films associated with electrochemical applications are presented.Special emphasis is placed on material design methods to reveal the reaction mechanisms and establish the structure–performance relationships by understanding structural variations in precatalysts and surface reconstruction under reaction conditions.Finally,we discuss remaining challenges and future perspectives.
