This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been ...This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.展开更多
Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make i...Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.展开更多
Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suita...Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suitable alternative to chemical bath deposited （CBD） CdS as a buffer layer in Cu（In,Ga）Se2 （CIGS） solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase β-ZnS （111） direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show Al mode at approximately 350 cm^-1, generally observed in the cubic phase β-ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense, smooth, uniform grains are formed on the quartz glass substrates through PLD technique. The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement, which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature. ZnS has a wider energy band gap than CdS （2.4 eV）, which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.展开更多
Functionalized implants demonstrate an upgraded approach in orthopedic implants,aiming to achieve long term success through improved bio integration.Bioceramic coatings with multifunctionality have arisen as an effect...Functionalized implants demonstrate an upgraded approach in orthopedic implants,aiming to achieve long term success through improved bio integration.Bioceramic coatings with multifunctionality have arisen as an effective substitute for conventional coatings,owing to their combination of various properties that are essential for bio-implants,such as osteointegration and antibacterial character.In the present study,thin hopeite coatings were produced by Pulsed laser deposition(PLD)and radio frequency magnetron sputtering(RFMS)on Ti64 substrates.The obtained hopeite coatings were annealed at 500°C in ambient air and studied in terms of surface morphology,phase composition,surface roughness,adhesion strength,antibacterial efficacy,apatite forming ability,and surface wettability by scanning electron microscope(SEM),X-ray diffraction(XRD),atomic force microscope(AFM),tensometer,fluorescence-activated cell sorting(FACS),simulated body fluid(SBF)immersion test and contact angle goniometer,respectively.Furthermore,based on promising results obtained in the present work it can be summarized that the new generation multifunctional hopeite coating synthesized by two alternative new process routes of PLD and RFMS on Ti64 substrates,provides effective alternatives to conventional coatings,largely attributed to strong osteointegration and antibacterial character of deposited hopeite coating ensuring the overall stability of metallic orthopedic implants.展开更多
High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resisti...High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,展开更多
Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequenc...Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.展开更多
Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） proc...Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.展开更多
Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morpho...Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.展开更多
Antimony doped tin oxide（ATO） thin films have been prepared by pulsed laser deposition（PLD） method.The intrinsic effect of Sb dopant,including the Sb content,transition degree between Sb（3＋） and Sb（5＋） and c...Antimony doped tin oxide（ATO） thin films have been prepared by pulsed laser deposition（PLD） method.The intrinsic effect of Sb dopant,including the Sb content,transition degree between Sb（3＋） and Sb（5＋） and crystallinity on the electrical and optical properties of the ATO thin films is mainly investigated.It is suggested that the transition degree of Sb（3＋） towards Sb（5＋）（Sb（5＋）/Sb（3＋） ratio） is determined by Sb content.When the Sb content is increased to 12 at%,the Sb（5＋）/Sb（3＋） ratio reaches the highest value of 2.05,corresponding to the resistivity of 2.70×10（-3） Ω·cm.Meanwhile,the Burstein-Moss effect caused by the increase of carrier concentration is observed and the band gap of the ATO thin films is broadened to 4.0 eV when the Sb content is increased to 12 at%,corresponding to the highest average optical transmittance of 92%.Comprehensively considering the combination of electrical and optical properties,the ATO thin films deposited with Sb content of 12 at%exhibit the best properties with the highest ＂figure of merit＂ of 3.85×10（-3） Ω（-1）.Finally,an antimony selenide（Sb_2Se_3） heterojunction solar cell prototype with the ATO thin film as the anode has been prepared,and a power conversion efficiency of 0.83%has been achieved.展开更多
Textured Bi and MnBi/Bi thin films are prepared by the pulsed laser deposition method. The highly c-axis textured MnBi films are obtained by annealing the bilayer consisting of textured Bi and Mn films. The eoerciviti...Textured Bi and MnBi/Bi thin films are prepared by the pulsed laser deposition method. The highly c-axis textured MnBi films are obtained by annealing the bilayer consisting of textured Bi and Mn films. The eoercivities of the MnBi/Bi film are 1.5 T and 2.35 T at room temperature and at 373K, respectively, showing a positive temperature coefficient. Microstructural investigations show that the textured MnBi film results from the orientated growth induced by the textured Bi under-layer.展开更多
The structural and surface properties of high-quality epitaxial cubic MgxZn1-xO films deposited by pulsed laser deposition (PLD) were studied by X-ray diffracti on and atomic force microscopy respectively. For films o...The structural and surface properties of high-quality epitaxial cubic MgxZn1-xO films deposited by pulsed laser deposition (PLD) were studied by X-ray diffracti on and atomic force microscopy respectively. For films of about 500nm thick, sca ns over a 30μm × 30μm area revealed a surface roughness Ra of about 100nm. Th is relatively large surface roughness is primarily attributed to the particulate and outgrowth during the PLD process. A good epitaxial growth on LaAlO3 (LAO ) (100) substrates, however has been obtained for composition x = 0.9, 0.7 and 0 .5 with the heteroepitaxial relationship of (100)■∥(100)LAO (out-of-plane) and (011)■∥(010)LAO (in-plane). These structural qualities suggest that cubic Mgx Zn1-xO alloys films have good potential in a variety of optoelectronic device ap plications.展开更多
High-quality superconducting FeSe0.5 Te0.5 films are epitaxiMly grown on different substrates by using the pulsed laser deposition method. By measuring the transport properties and surface morphology of films grown on...High-quality superconducting FeSe0.5 Te0.5 films are epitaxiMly grown on different substrates by using the pulsed laser deposition method. By measuring the transport properties and surface morphology of films grown on single- crystal substrates of Al2O3 （0001）, SrTiO3 （001）, and MgO （001）, as well as monitoring the real-time growth process on MgO substrates with reflection high energy electron diffraction, we find the appropriate parameters for epitaxial growth of high-quality FeSe0.5 Te0.5 thin films suitable for angle-resolved photoemission spectroscopy measurements. We further report the angle-resolved photoemission spectroscopy characterization of the super- conducting films. The clearly resolved Fermi surfaces and the band structure suggest a sample quality that is as good as that of high-quality single-crystals, demonstrating that the pulsed laser deposition method can serve as a promising technique for in situ preparation and manipulation of iron-based superconducting thin films, which may bring new prosperity to angle-resolved photoemission spectroscopy research on iron-based superconductors.展开更多
Thin films of PrCoO3 were deposited on LaAlO3 substrates by pulsed laser deposition technique.X-ray diffraction result indicates that films are single phase and c-axis textured.To investigate the spin state transition...Thin films of PrCoO3 were deposited on LaAlO3 substrates by pulsed laser deposition technique.X-ray diffraction result indicates that films are single phase and c-axis textured.To investigate the spin state transition,Raman spectroscopy measurements were performed at different temperatures.The position of the Raman modes is found to increase while full width at half maximum(FWHM) of these modes is found to decrease with the decrease of temperature across spin state transition temperature(220 K) of PrCoO3.展开更多
About φ45 mm LiAlO2 single crystal was grown by Czochralski （Cz） technique. However, the full-width at half-maximum （FWHM） value was high to 116.9 arcsec. After three vapor transport equilibration （VTE） process...About φ45 mm LiAlO2 single crystal was grown by Czochralski （Cz） technique. However, the full-width at half-maximum （FWHM） value was high to 116.9 arcsec. After three vapor transport equilibration （VTE） processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition （PLD）. It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.展开更多
Erbium dihydride thin films were prepared by pulsed laser deposition on Si（100） substrates using erbium target under different low hydrogen pressures. The properties of these films were examined by atomic force micr...Erbium dihydride thin films were prepared by pulsed laser deposition on Si（100） substrates using erbium target under different low hydrogen pressures. The properties of these films were examined by atomic force microscopy, X-ray diffractometer, transmission electron microscopy, and Fourier transform infrared spectroscopy and UV-vis spectroscopy. Surface morphology reveals the smooth surface of these films （RMS： from 0.503 to 2.849 nm）. The presence of obviously-broadened peaks for diffraction planes （111） suggests a presence of very tiny crystallites distributed along a preferred crystallographic orientation. Transmission electron microscopy investigations confirmed the formation of tiny crystallites due to the implantation of erbium ions. Due to the increase of nominal H concentration, the intensity of the broad absorbance from 190-260 nm increased.展开更多
The （ 200 ） dominated Nd： LuVO4 films were fabricated successfully on polished SlOE under different ambient gases and different oxygen pressures. By XRD, it is shown that a film with good crystallization is deposit...The （ 200 ） dominated Nd： LuVO4 films were fabricated successfully on polished SlOE under different ambient gases and different oxygen pressures. By XRD, it is shown that a film with good crystallization is deposited under oxygen and the optimal pressure is 20 Pa. The surface morphology of Nd：LuVO4 films was observed by AFM, and it is found that oxygen pressure influences the surface morphology of Nd ：LuVO4 films. The ratio of content of Nd：LuVO4 films was estimated according to the yields of Lu and V by using RBS spectra, this ratio is in good agreement with the target composition. The effective index refractive of every mode is 2.0044, 1.7098, measured by prism coupler method.展开更多
Highly conductive IrO2 thin films were prepared on Si （100） substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of ox...Highly conductive IrO2 thin films were prepared on Si （100） substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of oxygen pressure and substrate temperature on the structure, morphology and resistivity of IrO2 films. It was found that the above properties were strongly dependent on the oxygen pressure and substrate temperature. At 20 Pa oxygen ambient pressure, pure polycrystalline IrO2 thin films were obtained at substrate temperature in the 300-500℃ range with the preferential growth orientation of IrO2 films changed with the substrate temperature. IrO2 films exhibited a uniform and densely packed granular morphology with an average feature size increasing with the substrate temperature. The room-temperature resistivity variations of IrO2 films correlated well with the corresponding film morphology changes. IrO2 films with the minimum resistivity of （42 ±6）μΩ·cm was obtained at 500℃.展开更多
Ce3＋, Yb3＋ co-doped Y3Al5O12 films were prepared by pulse laser deposition. X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence spectra were used to characterize their structural and luminescent p...Ce3＋, Yb3＋ co-doped Y3Al5O12 films were prepared by pulse laser deposition. X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence spectra were used to characterize their structural and luminescent properties. Near-infrared quantum cutting from the films was observed via a cooperative energy transfer from Ce3＋ to Yb3＋ ions. The high quantum efficiency of the films implies that Ce3＋,Yb3＋ co-doped Y3A15O12 films have potential application by tuning the solar spectrum to enhance the efficiency of silicon solar cells.展开更多
The surface morphology of buffer layer yttrium-stabilized zirconia （YSZ） of YBa2CuaO7-σ （YBCO） high temperature superconducting films relies on a series of controllable experimental parameters. In this work, we f...The surface morphology of buffer layer yttrium-stabilized zirconia （YSZ） of YBa2CuaO7-σ （YBCO） high temperature superconducting films relies on a series of controllable experimental parameters. In this work, we focus on the influence of pulsed laser frequency and target crystalline type on surface morphology of YSZ films deposited by pulsed laser deposition （PLD） on rolling assisted biaxially textured substrate tapes. Usually two kinds of particles are observed in the YSZ layer： randomly distributed ones on the whole film and self-assembled ones along grain boundaries. SEM images are used to prove that particles can be partly removed when choosing dense targets of single crystalline. Lower frequency of pulsed laser also contributes to a smoother film surface. TEM images are used to view the crystalline structure of thin film. Thus we can obtain a basic understanding of how to prepare a particle-free YSZ buffer layer for YBCO in optimized conditions using PLD. The YBCO layer with nice structure and critical current density of around 5 MA/cm2 can be reached on smooth YSZ samples.展开更多
ZnO thin films are deposited on n-Si（111） substrates by pulsed laser deposition（PLD） system. Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularl...ZnO thin films are deposited on n-Si（111） substrates by pulsed laser deposition（PLD） system. Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularly as a function of annealing temperature. The microstructure, morphology and optical properties of the as-grown ZnO films are studied by X-ray diffraetion（XRD）. atomic force mieroseope（AFM）, Fourier transform infrared spectroscopy（FTIR） and photoluminescence（PL） spectra. The results show that the as- grown ZnO films have a hexagonal wurtzite structure with a preferred c-axis orientation. Moreover, the diameters of the ZnO crystallites become larger and the crystal quality of the ZnO fihns is improved with the increase of annealing temperature.展开更多
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2022YFA1603903 and 2021YFA0718700)the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101340002)+3 种基金the National Natural Science Foundation of China(Grant Nos.61971415,51972012,11927808,119611410,11961141008,and 12274439)the Strategic Priority Research Program(B)of Chinese Academy of Sciences(Grant No.XDB25000000)Beijing Natural Science Foundation(Grant No.Z190008)Basic Research Youth Team of Chinese Academy of Sciences(Grant No.2022YSBR-048).
文摘This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA0718700)the National Natural Science Foundation of China(Grant No.12174347)+1 种基金the Synergetic Extreme Condition User Facility(SECUF)the Center for Materials Genome。
文摘Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.
基金ACKNOWLEDGMENTS This work was supported by the National Basic Research Program of China （No.2006CB92200） and the National Natural Science Foundation of China （No.10774136）.
文摘Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suitable alternative to chemical bath deposited （CBD） CdS as a buffer layer in Cu（In,Ga）Se2 （CIGS） solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase β-ZnS （111） direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show Al mode at approximately 350 cm^-1, generally observed in the cubic phase β-ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense, smooth, uniform grains are formed on the quartz glass substrates through PLD technique. The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement, which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature. ZnS has a wider energy band gap than CdS （2.4 eV）, which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.
文摘Functionalized implants demonstrate an upgraded approach in orthopedic implants,aiming to achieve long term success through improved bio integration.Bioceramic coatings with multifunctionality have arisen as an effective substitute for conventional coatings,owing to their combination of various properties that are essential for bio-implants,such as osteointegration and antibacterial character.In the present study,thin hopeite coatings were produced by Pulsed laser deposition(PLD)and radio frequency magnetron sputtering(RFMS)on Ti64 substrates.The obtained hopeite coatings were annealed at 500°C in ambient air and studied in terms of surface morphology,phase composition,surface roughness,adhesion strength,antibacterial efficacy,apatite forming ability,and surface wettability by scanning electron microscope(SEM),X-ray diffraction(XRD),atomic force microscope(AFM),tensometer,fluorescence-activated cell sorting(FACS),simulated body fluid(SBF)immersion test and contact angle goniometer,respectively.Furthermore,based on promising results obtained in the present work it can be summarized that the new generation multifunctional hopeite coating synthesized by two alternative new process routes of PLD and RFMS on Ti64 substrates,provides effective alternatives to conventional coatings,largely attributed to strong osteointegration and antibacterial character of deposited hopeite coating ensuring the overall stability of metallic orthopedic implants.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 10904030)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091301120002)
文摘High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,
基金partially supported by the Scientific Research (No. 16K06268)the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan
文摘Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.
基金supported by the Yeungnam University Research Grants in 2009
文摘Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.
基金Project supported by the Guizhou Provincial Science and Technology Planning Project,China(Grant No.2018-5781)the National Natural Science Foundation of China(Grant No.51762010)+1 种基金the Guizhou Provincial Science and Technology Foundation,China(Grant Nos.2020-1Y021 and 2020-1Y271)the Guizhou Provincial High-level Innovative Talents,China(Grant No.2018-4006)。
文摘Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.
基金Funded by the International Science&Technology Cooperation Program of China(No.2011DFA52650)the"111"Project(No.B13035)+1 种基金the National Natural Science Foundation of China(No.51521001)the Fundamental Research Funds for the Central Universities
文摘Antimony doped tin oxide（ATO） thin films have been prepared by pulsed laser deposition（PLD） method.The intrinsic effect of Sb dopant,including the Sb content,transition degree between Sb（3＋） and Sb（5＋） and crystallinity on the electrical and optical properties of the ATO thin films is mainly investigated.It is suggested that the transition degree of Sb（3＋） towards Sb（5＋）（Sb（5＋）/Sb（3＋） ratio） is determined by Sb content.When the Sb content is increased to 12 at%,the Sb（5＋）/Sb（3＋） ratio reaches the highest value of 2.05,corresponding to the resistivity of 2.70×10（-3） Ω·cm.Meanwhile,the Burstein-Moss effect caused by the increase of carrier concentration is observed and the band gap of the ATO thin films is broadened to 4.0 eV when the Sb content is increased to 12 at%,corresponding to the highest average optical transmittance of 92%.Comprehensively considering the combination of electrical and optical properties,the ATO thin films deposited with Sb content of 12 at%exhibit the best properties with the highest ＂figure of merit＂ of 3.85×10（-3） Ω（-1）.Finally,an antimony selenide（Sb_2Se_3） heterojunction solar cell prototype with the ATO thin film as the anode has been prepared,and a power conversion efficiency of 0.83%has been achieved.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51171001,51371009 and 50971003the Foundation of Key Laboratory of Neutron Physics of CAEP under Grant No 2014BB02
文摘Textured Bi and MnBi/Bi thin films are prepared by the pulsed laser deposition method. The highly c-axis textured MnBi films are obtained by annealing the bilayer consisting of textured Bi and Mn films. The eoercivities of the MnBi/Bi film are 1.5 T and 2.35 T at room temperature and at 373K, respectively, showing a positive temperature coefficient. Microstructural investigations show that the textured MnBi film results from the orientated growth induced by the textured Bi under-layer.
文摘The structural and surface properties of high-quality epitaxial cubic MgxZn1-xO films deposited by pulsed laser deposition (PLD) were studied by X-ray diffracti on and atomic force microscopy respectively. For films of about 500nm thick, sca ns over a 30μm × 30μm area revealed a surface roughness Ra of about 100nm. Th is relatively large surface roughness is primarily attributed to the particulate and outgrowth during the PLD process. A good epitaxial growth on LaAlO3 (LAO ) (100) substrates, however has been obtained for composition x = 0.9, 0.7 and 0 .5 with the heteroepitaxial relationship of (100)■∥(100)LAO (out-of-plane) and (011)■∥(010)LAO (in-plane). These structural qualities suggest that cubic Mgx Zn1-xO alloys films have good potential in a variety of optoelectronic device ap plications.
基金Supported by the Chinese Academy of Sciences under Grant No 2010Y1JB6the National Basic Research Program of China under Grant No 2010CB923000the National Natural Science Foundation of China under Grant Nos 11234014 and 11227903
文摘High-quality superconducting FeSe0.5 Te0.5 films are epitaxiMly grown on different substrates by using the pulsed laser deposition method. By measuring the transport properties and surface morphology of films grown on single- crystal substrates of Al2O3 （0001）, SrTiO3 （001）, and MgO （001）, as well as monitoring the real-time growth process on MgO substrates with reflection high energy electron diffraction, we find the appropriate parameters for epitaxial growth of high-quality FeSe0.5 Te0.5 thin films suitable for angle-resolved photoemission spectroscopy measurements. We further report the angle-resolved photoemission spectroscopy characterization of the super- conducting films. The clearly resolved Fermi surfaces and the band structure suggest a sample quality that is as good as that of high-quality single-crystals, demonstrating that the pulsed laser deposition method can serve as a promising technique for in situ preparation and manipulation of iron-based superconducting thin films, which may bring new prosperity to angle-resolved photoemission spectroscopy research on iron-based superconductors.
基金Project supported by the Second Stage of Brain Korea 21 Project
文摘Thin films of PrCoO3 were deposited on LaAlO3 substrates by pulsed laser deposition technique.X-ray diffraction result indicates that films are single phase and c-axis textured.To investigate the spin state transition,Raman spectroscopy measurements were performed at different temperatures.The position of the Raman modes is found to increase while full width at half maximum(FWHM) of these modes is found to decrease with the decrease of temperature across spin state transition temperature(220 K) of PrCoO3.
文摘About φ45 mm LiAlO2 single crystal was grown by Czochralski （Cz） technique. However, the full-width at half-maximum （FWHM） value was high to 116.9 arcsec. After three vapor transport equilibration （VTE） processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition （PLD）. It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.
基金Funded by the Fund of the Science and Technology on Plasma Physics Laboratory(No.9140C680501110C6803)
文摘Erbium dihydride thin films were prepared by pulsed laser deposition on Si（100） substrates using erbium target under different low hydrogen pressures. The properties of these films were examined by atomic force microscopy, X-ray diffractometer, transmission electron microscopy, and Fourier transform infrared spectroscopy and UV-vis spectroscopy. Surface morphology reveals the smooth surface of these films （RMS： from 0.503 to 2.849 nm）. The presence of obviously-broadened peaks for diffraction planes （111） suggests a presence of very tiny crystallites distributed along a preferred crystallographic orientation. Transmission electron microscopy investigations confirmed the formation of tiny crystallites due to the implantation of erbium ions. Due to the increase of nominal H concentration, the intensity of the broad absorbance from 190-260 nm increased.
文摘The （ 200 ） dominated Nd： LuVO4 films were fabricated successfully on polished SlOE under different ambient gases and different oxygen pressures. By XRD, it is shown that a film with good crystallization is deposited under oxygen and the optimal pressure is 20 Pa. The surface morphology of Nd：LuVO4 films was observed by AFM, and it is found that oxygen pressure influences the surface morphology of Nd ：LuVO4 films. The ratio of content of Nd：LuVO4 films was estimated according to the yields of Lu and V by using RBS spectra, this ratio is in good agreement with the target composition. The effective index refractive of every mode is 2.0044, 1.7098, measured by prism coupler method.
基金Funded by Key Fund of National Cooperation of Hubei Province Program for Changjiang Scholars and Innovative Research Team in University (IRT0547)
文摘Highly conductive IrO2 thin films were prepared on Si （100） substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of oxygen pressure and substrate temperature on the structure, morphology and resistivity of IrO2 films. It was found that the above properties were strongly dependent on the oxygen pressure and substrate temperature. At 20 Pa oxygen ambient pressure, pure polycrystalline IrO2 thin films were obtained at substrate temperature in the 300-500℃ range with the preferential growth orientation of IrO2 films changed with the substrate temperature. IrO2 films exhibited a uniform and densely packed granular morphology with an average feature size increasing with the substrate temperature. The room-temperature resistivity variations of IrO2 films correlated well with the corresponding film morphology changes. IrO2 films with the minimum resistivity of （42 ±6）μΩ·cm was obtained at 500℃.
基金Funded by the China Postdoctoral Science Foundation(No.2012M511801)the National Natural Science Foundation of China(Nos.11474104 and 51372092)
文摘Ce3＋, Yb3＋ co-doped Y3Al5O12 films were prepared by pulse laser deposition. X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence spectra were used to characterize their structural and luminescent properties. Near-infrared quantum cutting from the films was observed via a cooperative energy transfer from Ce3＋ to Yb3＋ ions. The high quantum efficiency of the films implies that Ce3＋,Yb3＋ co-doped Y3A15O12 films have potential application by tuning the solar spectrum to enhance the efficiency of silicon solar cells.
基金Supported by the ITER Project of the Ministry of Science and Technology of China under Grant No 2011GB113004the Shanghai Commission of Science and Technology under Grant No 11DZ1100402the Youth Fund of the National Natural Science Foundation of China under Grant No 11204174
文摘The surface morphology of buffer layer yttrium-stabilized zirconia （YSZ） of YBa2CuaO7-σ （YBCO） high temperature superconducting films relies on a series of controllable experimental parameters. In this work, we focus on the influence of pulsed laser frequency and target crystalline type on surface morphology of YSZ films deposited by pulsed laser deposition （PLD） on rolling assisted biaxially textured substrate tapes. Usually two kinds of particles are observed in the YSZ layer： randomly distributed ones on the whole film and self-assembled ones along grain boundaries. SEM images are used to prove that particles can be partly removed when choosing dense targets of single crystalline. Lower frequency of pulsed laser also contributes to a smoother film surface. TEM images are used to view the crystalline structure of thin film. Thus we can obtain a basic understanding of how to prepare a particle-free YSZ buffer layer for YBCO in optimized conditions using PLD. The YBCO layer with nice structure and critical current density of around 5 MA/cm2 can be reached on smooth YSZ samples.
基金National Natural Science Foundation of China(90301002 ,90201025)
文摘ZnO thin films are deposited on n-Si（111） substrates by pulsed laser deposition（PLD） system. Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularly as a function of annealing temperature. The microstructure, morphology and optical properties of the as-grown ZnO films are studied by X-ray diffraetion（XRD）. atomic force mieroseope（AFM）, Fourier transform infrared spectroscopy（FTIR） and photoluminescence（PL） spectra. The results show that the as- grown ZnO films have a hexagonal wurtzite structure with a preferred c-axis orientation. Moreover, the diameters of the ZnO crystallites become larger and the crystal quality of the ZnO fihns is improved with the increase of annealing temperature.
