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Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering 被引量:1
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作者 Zhaowu Tang Chunsen Liu +6 位作者 Senfeng Zeng Xiaohe Huang Liwei Liu Jiayi Li Yugang Jiang David Wei Zhang Peng Zhou 《Journal of Semiconductors》 EI CAS CSCD 2021年第2期100-107,共8页
The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However... The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n junction.Here,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly suppressed.As a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile memories.This work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology. 展开更多
关键词 quasi-nonvolatile memory refresh time density of states engineering
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作者 Zhaowu Tang Chunsen Liu +6 位作者 Senfeng Zeng Xiaohe Huang Liwei Liu Jiayi Li Yugang Jiang David Wei Zhang Peng Zhou 《Journal of Semiconductors》 EI CAS CSCD 2021年第2期106-107,共2页
The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However... The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n junction.Here,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly suppressed.As a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile memories.This work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology. 展开更多
关键词 quasi-nonvolatile memory refresh time density of states engineering
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