Introduction Atherosclerosis is a potentially life-threatening disease of large arteries that is strongly associated with systemic risk factors such as hypercholesterolemia,hypertension,smoking,and diabetes. However,a...Introduction Atherosclerosis is a potentially life-threatening disease of large arteries that is strongly associated with systemic risk factors such as hypercholesterolemia,hypertension,smoking,and diabetes. However,atherosclerosis develops as a展开更多
Subject Code:C14 With the support by the National Natural Science Foundation of China,the research team led by Prof.He Zuhua(何祖华)at the National Key Laboratory of Plant Molecular Genetics and National Center of Pla...Subject Code:C14 With the support by the National Natural Science Foundation of China,the research team led by Prof.He Zuhua(何祖华)at the National Key Laboratory of Plant Molecular Genetics and National Center of Plant Gene Research,Shanghai Institute of Plant Physiology&Ecology,Chinese Academy of Sciences,展开更多
Memristors have received much attention for their ability to achieve multi-level storage and synaptic learning.However,the main factor that hinders the application of memristors to simulate neural synapses is the inst...Memristors have received much attention for their ability to achieve multi-level storage and synaptic learning.However,the main factor that hinders the application of memristors to simulate neural synapses is the instability of the formation and breakage of conductive filaments inside traditional memristors,which makes it difficult to simulate the function of biological synapses in practice.However,the resistance change of ferroelectric memristors relies on the polarization inversion of the ferroelectric thin film,thus avoiding the above problem.In this study,a Pd/HfAlO/LSMO/STO/Si ferroelectric memristor is proposed,which can achieve resistive switching properties through the combined action of ferroelectricity and oxygen vacancies.The I−V curves show that the device has good stability and uniformity.In addition,the effect of pulse sequence modulation on the conductance was investigated,and the biological synaptic function and learning behavior were simulated successfully.The results of the above studies provide a basis for the development of ferroelectric memristors with neurosynaptic-like behaviors.展开更多
基金support from National Heart Lung and Blood Institute Grants P50-HL56985 and R01-HL61794
文摘Introduction Atherosclerosis is a potentially life-threatening disease of large arteries that is strongly associated with systemic risk factors such as hypercholesterolemia,hypertension,smoking,and diabetes. However,atherosclerosis develops as a
文摘Subject Code:C14 With the support by the National Natural Science Foundation of China,the research team led by Prof.He Zuhua(何祖华)at the National Key Laboratory of Plant Molecular Genetics and National Center of Plant Gene Research,Shanghai Institute of Plant Physiology&Ecology,Chinese Academy of Sciences,
基金supported by the Natural Science Foundation of Hebei Province (No.F2021201009)the National Natural Science Foundation of China (No.62104058)+3 种基金the Natural Science Foundation of Hebei Province (No.F2021201022)the Science and Technology Project of Hebei Education Department (No.QN2020178)the Foundation of President of Hebei University (No.XZJJ201910)Advanced Talents Incubation Program of the Hebei University (No.521000981362).
文摘Memristors have received much attention for their ability to achieve multi-level storage and synaptic learning.However,the main factor that hinders the application of memristors to simulate neural synapses is the instability of the formation and breakage of conductive filaments inside traditional memristors,which makes it difficult to simulate the function of biological synapses in practice.However,the resistance change of ferroelectric memristors relies on the polarization inversion of the ferroelectric thin film,thus avoiding the above problem.In this study,a Pd/HfAlO/LSMO/STO/Si ferroelectric memristor is proposed,which can achieve resistive switching properties through the combined action of ferroelectricity and oxygen vacancies.The I−V curves show that the device has good stability and uniformity.In addition,the effect of pulse sequence modulation on the conductance was investigated,and the biological synaptic function and learning behavior were simulated successfully.The results of the above studies provide a basis for the development of ferroelectric memristors with neurosynaptic-like behaviors.
