The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method. The influence of gas pressure on thermal field, solid-liquid inte...The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method. The influence of gas pressure on thermal field, solid-liquid interface shape, gas velocity field and von Mises stress were studied for the first time. It is found that the root of the seed melt when gas pressure equals to one atmosphere or more than one atmosphere, especially during the seeding period, this result is consistent with the experimental observation, and this paper presents three ways to solve this problem. The temperature gradient and stress decreases significantly as the gas pressure increases. The convexity of the solid-liquid interface slightly increases when the gas pressure increases. Numerical analysis was used to optimize the hot zone design.展开更多
The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Φ225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micr...The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Φ225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy (OM), scan-ning electron microscopy (SEM) and electron probe microanalysis (EPMA). The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material (Mo) at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.展开更多
To obtain the stable temperature field required for growing sapphire crystals, the influence of relative positions between RF coil and crucible on the performances of sapphires produced by edge-defined film-fed growth...To obtain the stable temperature field required for growing sapphire crystals, the influence of relative positions between RF coil and crucible on the performances of sapphires produced by edge-defined film-fed growth(EFG) technique was investigated. For comparison, the crucible was located at the top(case A) and the middle(case B) of the RF coil, respectively. Furthermore, the lattice integrities were studied by the double-crystal X-ray diffraction, and the dislocations were observed under the optical microscope and atomic force microscope after corroding in molten KOH at 390 °C. The crystals in case B exhibit better lattice integrity with smaller full width at half maximum of 29.13 rad·s, while the value in case A is 45.17 rad·s. The morphologies of dislocation etch pits in both cases show typical triangular symmetry with smooth surfaces. However, the dislocation density of 2.8×104 cm-2 in case B is only half of that in case A, and the distribution is more uniform, compared to the U-shaper in case A.展开更多
The internal radiative contributed on heat transfer will enhance the heat transport inside the crystalline phase during growth the transparent sapphire crystal using a heat-exchanger-method (HEM). The artificially enh...The internal radiative contributed on heat transfer will enhance the heat transport inside the crystalline phase during growth the transparent sapphire crystal using a heat-exchanger-method (HEM). The artificially enhanced thermal conductivity of the solid to include the internal radiation effect was used in the present study. Numerical simulations using FIDAP were performed to investigate the effects of the thermal conductivity on the shape of the melt-crystal interface, the temperature distribution, and the velocity distribution. Heat transfer (including radiation) from the furnace to the crucible and heat extraction from the heat exchanger can be modeled by the convection boundary conditions. In the present study, we focus on the influence of the conductivity on the shape of the melt-crystal interface. Therefore, the effect of the others growth parameters during the HEM crystal growth was neglected. For the homogenous conductivity (km=kS=k), the maximum convexity decreases as k increases and the rate of maximum convexity increases for a higher conductivity is less abrupt than for a lower conductivity. For the no homogenous conductivity (km≠kS), the higher solid's kS generates lower maximum convexity and the variation in maximum convexity was less abrupt for the different melt's km. The maximum convexity decreases slightly as the enhance conductivity of the sapphire crystal increases. The effects of the anisotropic conductivity of the sapphire crystal were also addressed. The maximum convexity of the melt-crystal interface decreases when the radial conductivity (ksr) of the crystal increases. The maximum convexity increases as the axial conductivity (ksz) of the crucible increases.展开更多
In this paper, the modified slip/fracture activation model has been used in order to understand the mechanism of ductile-brittle transition on the R-plane of sapphire during ultra-precision machining by reflecting dir...In this paper, the modified slip/fracture activation model has been used in order to understand the mechanism of ductile-brittle transition on the R-plane of sapphire during ultra-precision machining by reflecting direction of resultant force. Anisotropic characteristics of crack morphology and ductility of machining depending on cutting direction were explained in detail with modified fracture cleavage and plastic deformation parameters. Through the analysis, it was concluded that crack morphologies were mainly determined by the interaction of multiple fracture systems activated while, critical depth of cut was determined by the dominant plastic deformation parameter. In addition to this, by using proportionality relationship between magnitude of resultant force and depth of cut in the ductile region, an empirical model for critical depth of cut was developed.展开更多
The diameter of Czochralski (Cz) sapphire crystals is 50 mm. The sapphire substrates were lapped by using diamond powders and polished by chemical mechanical polishing(CMP) method using alkali slurry with SiO2 abrasiv...The diameter of Czochralski (Cz) sapphire crystals is 50 mm. The sapphire substrates were lapped by using diamond powders and polished by chemical mechanical polishing(CMP) method using alkali slurry with SiO2 abrasive. After obtaining the smooth surfaces, the chemical etching experiments were processed by using fused KOH and NaOH etchants at different temperature for different times. The dislocation was observed by means of optical microscope and scanning electron microscope. The clear and stable contrast images of sample etching pits were observed. On the whole, the dislocation density is about 104?105 cm?2. Comparing the results under the conditions of different etchants, temperatures and times during the etching proceeding, it was found that the optimal condition for dislocation displaying is etching 15 min with fused KOH at 290 ℃. At the same time, the formation of the etch pits and the reducing method of dislocation density were also discussed.展开更多
文摘The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method. The influence of gas pressure on thermal field, solid-liquid interface shape, gas velocity field and von Mises stress were studied for the first time. It is found that the root of the seed melt when gas pressure equals to one atmosphere or more than one atmosphere, especially during the seeding period, this result is consistent with the experimental observation, and this paper presents three ways to solve this problem. The temperature gradient and stress decreases significantly as the gas pressure increases. The convexity of the solid-liquid interface slightly increases when the gas pressure increases. Numerical analysis was used to optimize the hot zone design.
基金National Defensive Preliminary Research Funds of China (41312040404)
文摘The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Φ225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy (OM), scan-ning electron microscopy (SEM) and electron probe microanalysis (EPMA). The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material (Mo) at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.
基金Project(BA2012049)supported by the Special Fund of Jiangsu Province for the Transformation of Scientific and Technological Achievements,China
文摘To obtain the stable temperature field required for growing sapphire crystals, the influence of relative positions between RF coil and crucible on the performances of sapphires produced by edge-defined film-fed growth(EFG) technique was investigated. For comparison, the crucible was located at the top(case A) and the middle(case B) of the RF coil, respectively. Furthermore, the lattice integrities were studied by the double-crystal X-ray diffraction, and the dislocations were observed under the optical microscope and atomic force microscope after corroding in molten KOH at 390 °C. The crystals in case B exhibit better lattice integrity with smaller full width at half maximum of 29.13 rad·s, while the value in case A is 45.17 rad·s. The morphologies of dislocation etch pits in both cases show typical triangular symmetry with smooth surfaces. However, the dislocation density of 2.8×104 cm-2 in case B is only half of that in case A, and the distribution is more uniform, compared to the U-shaper in case A.
文摘The internal radiative contributed on heat transfer will enhance the heat transport inside the crystalline phase during growth the transparent sapphire crystal using a heat-exchanger-method (HEM). The artificially enhanced thermal conductivity of the solid to include the internal radiation effect was used in the present study. Numerical simulations using FIDAP were performed to investigate the effects of the thermal conductivity on the shape of the melt-crystal interface, the temperature distribution, and the velocity distribution. Heat transfer (including radiation) from the furnace to the crucible and heat extraction from the heat exchanger can be modeled by the convection boundary conditions. In the present study, we focus on the influence of the conductivity on the shape of the melt-crystal interface. Therefore, the effect of the others growth parameters during the HEM crystal growth was neglected. For the homogenous conductivity (km=kS=k), the maximum convexity decreases as k increases and the rate of maximum convexity increases for a higher conductivity is less abrupt than for a lower conductivity. For the no homogenous conductivity (km≠kS), the higher solid's kS generates lower maximum convexity and the variation in maximum convexity was less abrupt for the different melt's km. The maximum convexity decreases slightly as the enhance conductivity of the sapphire crystal increases. The effects of the anisotropic conductivity of the sapphire crystal were also addressed. The maximum convexity of the melt-crystal interface decreases when the radial conductivity (ksr) of the crystal increases. The maximum convexity increases as the axial conductivity (ksz) of the crucible increases.
基金supported by the NSF under grant No. CMMI-1844821。
文摘In this paper, the modified slip/fracture activation model has been used in order to understand the mechanism of ductile-brittle transition on the R-plane of sapphire during ultra-precision machining by reflecting direction of resultant force. Anisotropic characteristics of crack morphology and ductility of machining depending on cutting direction were explained in detail with modified fracture cleavage and plastic deformation parameters. Through the analysis, it was concluded that crack morphologies were mainly determined by the interaction of multiple fracture systems activated while, critical depth of cut was determined by the dominant plastic deformation parameter. In addition to this, by using proportionality relationship between magnitude of resultant force and depth of cut in the ductile region, an empirical model for critical depth of cut was developed.
基金Project(59772037) supported by the National Natural Science Foundation of China project(500016) supported by the Hebei Natural Science Foundation Project(20050080007) supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China
文摘The diameter of Czochralski (Cz) sapphire crystals is 50 mm. The sapphire substrates were lapped by using diamond powders and polished by chemical mechanical polishing(CMP) method using alkali slurry with SiO2 abrasive. After obtaining the smooth surfaces, the chemical etching experiments were processed by using fused KOH and NaOH etchants at different temperature for different times. The dislocation was observed by means of optical microscope and scanning electron microscope. The clear and stable contrast images of sample etching pits were observed. On the whole, the dislocation density is about 104?105 cm?2. Comparing the results under the conditions of different etchants, temperatures and times during the etching proceeding, it was found that the optimal condition for dislocation displaying is etching 15 min with fused KOH at 290 ℃. At the same time, the formation of the etch pits and the reducing method of dislocation density were also discussed.
