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Combined application of organic fertilizer and chemical fertilizer alleviates the kernel position effect in summer maize by promoting post-silking nitrogen uptake and dry matter accumulation
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作者 Lichao Zhai Lihua Zhang +7 位作者 Yongzeng Cui Lifang Zhai Mengjing Zheng Yanrong Yao Jingting Zhang Wanbin Hou Liyong Wu Xiuling Jia 《Journal of Integrative Agriculture》 SCIE CAS CSCD 2024年第4期1179-1194,共16页
Adjusting agronomic measures to alleviate the kernel position effect in maize is important for ensuring high yields.In order to clarify whether the combined application of organic fertilizer and chemical fertilizer(CA... Adjusting agronomic measures to alleviate the kernel position effect in maize is important for ensuring high yields.In order to clarify whether the combined application of organic fertilizer and chemical fertilizer(CAOFCF)can alleviate the kernel position effect of summer maize,field experiments were conducted during the 2019 and 2020 growing seasons,and five treatments were assessed:CF,100%chemical fertilizer;OFCF1,15%organic fertilizer+85%chemical fertilizer;OFCF2,30%organic fertilizer+70%chemical fertilizer;OFCF3,45%organic fertilizer+55%chemical fertilizer;and OFCF4,60%organic fertilizer+40%chemical fertilizer.Compared with the CF treatment,the OFCF1 and OFCF2 treatments significantly alleviated the kernel position effect by increasing the weight ratio of inferior kernels to superior kernels and reducing the weight gap between the superior and inferior kernels.These effects were largely due to the improved filling and starch accumulation of inferior kernels.However,there were no obvious differences in the kernel position effect among plants treated with CF,OFCF3,or OFCF4 in most cases.Leaf area indexes,post-silking photosynthetic rates,and net assimilation rates were higher in plants treated with OFCF1 or OFCF2 than in those treated with CF,reflecting an enhanced photosynthetic capacity and improved postsilking dry matter accumulation(DMA)in the plants treated with OFCF1 or OFCF2.Compared with the CF treatment,the OFCF1 and OFCF2 treatments increased post-silking N uptake by 66.3 and 75.5%,respectively,which was the major factor driving post-silking photosynthetic capacity and DMA.Moreover,the increases in root DMA and zeatin riboside content observed following the OFCF1 and OFCF2 treatments resulted in reduced root senescence,which is associated with an increased post-silking N uptake.Analyses showed that post-silking N uptake,DMA,and grain yield in summer maize were negatively correlated with the kernel position effect.In conclusion,the combined application of 15-30%organic fertilizer and 70-85%chemical fertilizer alleviated the kernel position effect in summer maize by improving post-silking N uptake and DMA.These results provide new insights into how CAOFCF can be used to improve maize productivity. 展开更多
关键词 chemical fertilizer dry mater accumulation kernel position effect N uptake organic fertilizer
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Progress of Electrocatalytic Technology in Treating Organic Chemical Wastewater
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作者 Lun Deng Hemei Wang 《Expert Review of Chinese Chemical》 2024年第1期9-14,共6页
In recent years,extensive research has been conducted on the preparation of high catalytic performance electrodes and the development of electrocatalytic water treatment processes.This article introduces the basic pri... In recent years,extensive research has been conducted on the preparation of high catalytic performance electrodes and the development of electrocatalytic water treatment processes.This article introduces the basic principles of electrochemical water treatment,the preparation of electrode materials,and the research progress of electrocatalytic technology for degrading organic chemical wastewater.It analyzes the problems faced by electrocatalytic degradation of organic chemical wastewater and looks forward to the development trend of electrocatalytic technology in the field of organic chemical wastewater treatment. 展开更多
关键词 ELECTROCATALYSIS electrode preparation organic chemical wastewater water treatment
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Carbon sequestration rate,nitrogen use efficiency and rice yield responses to long-term substitution of chemical fertilizer by organic manure in a rice–rice cropping system 被引量:2
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作者 Nafiu Garba HAYATU LIU Yi-ren +7 位作者 HAN Tian-fu Nano Alemu DABA ZHANG Lu SHEN Zhe LI Ji-wen Haliru MUAZU Sobhi Faid LAMLOM ZHANG Hui-min 《Journal of Integrative Agriculture》 SCIE CAS CSCD 2023年第9期2848-2864,共17页
Combined application of chemical fertilizers with organic amendments was recommended as a strategy for improving yield,soil carbon storage,and nutrient use efficiency.However,how the long-term substitution of chemical... Combined application of chemical fertilizers with organic amendments was recommended as a strategy for improving yield,soil carbon storage,and nutrient use efficiency.However,how the long-term substitution of chemical fertilizer with organic manure affects rice yield,carbon sequestration rate(CSR),and nitrogen use efficiency(NUE)while ensuring environmental safety remains unclear.This study assessed the long-term effect of substituting chemical fertilizer with organic manure on rice yield,CSR,and NUE.It also determined the optimum substitution ratio in the acidic soil of southern China.The treatments were:(i)NPK0,unfertilized control;(ii)NPK1,100%chemical nitrogen,phosphorus,and potassium fertilizer;(iii)NPKM1,70%chemical NPK fertilizer and 30%organic manure;(iv)NPKM2,50%chemical NPK fertilizer and 50%organic manure;and(v)NPKM3,30%chemical NPK fertilizer and 70%organic manure.Milk vetch and pig manure were sources of manure for early and late rice seasons,respectively.The result showed that SOC content was higher in NPKM1,NPKM2,and NPKM3 treatments than in NPK0 and NPK1 treatments.The carbon sequestration rate increased by 140,160,and 280%under NPKM1,NPKM2,and NPKM3 treatments,respectively,compared to NPK1 treatment.Grain yield was 86.1,93.1,93.6,and 96.5%higher under NPK1,NPKM1,NPKM2,and NPKM3 treatments,respectively,compared to NPK0 treatment.The NUE in NPKM1,NPKM2,and NPKM3 treatments was higher as compared to NPK1 treatment for both rice seasons.Redundancy analysis revealed close positive relationships of CSR with C input,total N,soil C:N ratio,catalase,and humic acids,whereas NUE was closely related to grain yield,grain N content,and phenol oxidase.Furthermore,CSR and NUE negatively correlated with humin acid and soil C:P and N:P ratios.The technique for order of preference by similarity to ideal solution(TOPSIS)showed that NPKM3 treatment was the optimum strategy for improving CSR and NUE.Therefore,substituting 70%of chemical fertilizer with organic manure could be the best management option for increasing CSR and NUE in the paddy fields of southern China. 展开更多
关键词 carbon sequestration chemical fertilizer long term organic manure nitrogen use efficiency paddy rice
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Effects of Biological Organic Fertilizer on Flue-cured Tobacco Chemical Composition 被引量:3
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作者 霍光 王镇 +1 位作者 孟贵星 化党领 《Agricultural Science & Technology》 CAS 2013年第8期1137-1141,1146,共6页
Through field experiment,special biological fertilizer and cake fertilizer were applied collectively to tobacco,and chemical compositions of Wanxi flue-cured tobacco leaves were researched.The results showed that the ... Through field experiment,special biological fertilizer and cake fertilizer were applied collectively to tobacco,and chemical compositions of Wanxi flue-cured tobacco leaves were researched.The results showed that the increase of biological organic fertilizer would significantly improve soil nutrient supplying capacity.Compared with conventional fertilization,the contents of reducing sugar,total sugar and starch in different parts of tobaccos which were applied with biological organic fertilizer were closer to standards of excellent tobacco.In the treatment,the ratio of reducing sugar and nicotine in tobacco was more suitable in middle and lower parts of the plant and the contents of total N,nicotine and chlorine in tobacco were lowered,improving tobacco quality. 展开更多
关键词 Biological organic fertilizer Soil Flue-cured tobacco chemical composition
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Natural forests exhibit higher organic carbon concentrations and recalcitrant carbon proportions in soil than plantations:a global data synthesis
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作者 Xiuqing Nie Hui Wang +1 位作者 Jian Wang Shirong Liu 《Journal of Forestry Research》 SCIE EI CAS CSCD 2024年第5期131-141,共11页
Different chemical compositions of soil organic carbon(SOC)affect its persistence and whether it signifi-cantly differs between natural forests and plantations remains unclear.By synthesizing 234 observations of SOC c... Different chemical compositions of soil organic carbon(SOC)affect its persistence and whether it signifi-cantly differs between natural forests and plantations remains unclear.By synthesizing 234 observations of SOC chemical compositions,we evaluated global patterns of concentra-tion,individual chemical composition(alkyl C,O-alkyl C,aromatic C,and carbonyl C),and their distribution even-ness.Our results indicate a notably higher SOC,a markedly larger proportion of recalcitrant alkyl C,and lower easily decomposed carbonyl C proportion in natural forests.How-ever,SOC chemical compositions were appreciably more evenly distributed in plantations.Based on the assumed con-ceptual index of SOC chemical composition evenness,we deduced that,compared to natural forests,plantations may have higher possible resistance to SOC decomposition under disturbances.In tropical regions,SOC levels,recalcitrant SOC chemical composition,and their distributed evenness were significantly higher in natural forests,indicating that SOC has higher chemical stability and possible resistance to decomposition.Climate factors had minor effects on alkyl C in forests globally,while they notably affected SOC chemi-cal composition in tropical forests.This could contribute to the differences in chemical compositions and their distrib-uted evenness between plantations and natural stands. 展开更多
关键词 Global data synthesis Natural forest Plantations Soil organic carbon Soil organic carbon chemical composition
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Impacts of chemical fertilizer reduction and organic amendments supplementation on soil nutrient,enzyme activity and heavy metal content 被引量:76
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作者 NING Chuan-chuan GAO Peng-dong +3 位作者 WANG Bing-qing LIN Wei-peng JIANG Ni-hao CAI Kun-zheng 《Journal of Integrative Agriculture》 SCIE CAS CSCD 2017年第8期1819-1831,共13页
Excessive use of agro-chemicals (such as mineral fertilizers) poses potential risks to soil quality. Application of organic amendments and reduction of inorganic fertilizer are economically feasible and environmenta... Excessive use of agro-chemicals (such as mineral fertilizers) poses potential risks to soil quality. Application of organic amendments and reduction of inorganic fertilizer are economically feasible and environmentally sound approaches to de- velop sustainable agriculture. This study investigated and evaluated the effects of mineral fertilizer reduction and partial substitution of organic amendment on soil fertility and heavy metal content in a 10-season continually planted vegetable field during 2009-2012. The experiment included four treatments: 100% chemical fertilizer (CF100), 80% chemical fertilizer (CF80), 60% chemical fertilizer and 20% organic fertilizer (CF60+OM20), and 40% chemical fertilizer and 40% organic fertilizer (CF40+OM40). Soil nutrients, enzyme activity and heavy metal content were determined. The results showed that single chemical fertilizer reduction (CF80) had no significant effect on soil organic matter content, soil catalase activity and soil heavy metal content, but slightly reduced soil available N, P, K, and soil urease activity, and significantly reduced soil acid phosphatase activity. Compared with CF100, 40 or 60% reduction of chemical fertilizer supplemented with organic fertilizer (CF60+OM20, CF40+OM40) significantly increased soil organic matter, soil catalase activity and urease activity especially in last several seasons, but reduced soil available P, K, and soil acid phosphatase activity. In addition, continu- ous application of organic fertilizer resulted in higher accumulation of Zn, Cd, and Cr in soil in the late stage of experiment, which may induce adverse effects on soil health and food safety. 展开更多
关键词 chemical fertilizer organic amendments soil fertility VEGETABLE soil health heavy metal
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Effects of Organic Manure Application with Chemical Fertilizers on Nutrient Absorption and Yield of Rice in Hunan of Southern China 被引量:24
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作者 XU Ming-gang LI Dong-chu +3 位作者 LI Ju-mei QIN Dao-zhu Kazuyuki Yagi Yasukazu Hosen 《Agricultural Sciences in China》 CAS CSCD 2008年第10期1245-1252,共8页
To evaluate the effect of organic manure application with chemical fertilizers on rice yield and soil fertility under long-term double-rice cropping system, a six year field experiment was conducted continually in the... To evaluate the effect of organic manure application with chemical fertilizers on rice yield and soil fertility under long-term double-rice cropping system, a six year field experiment was conducted continually in the paddy soil derived from Quaternary red clay in Hunan Province of southern China. Four different treatments, i.e., no nitrogen with chemical P and K (PK), swine manure only (M), N, P and K chemical fertilizers only (NPK), and half chemical fertilizers combined with half swine manure (NPKM) with four replications were included. Each N, P and K application rate was the same at all the treatments (except the N application rate at PK) and N application rate was 150 kg N ha^-1. All fertilizers were applied to soil tillage layer with once application as baseal fertilizers. The nutrients uptake rate, grain yield, nitrogen use efficiency, and soil organic matter content at each treatment were investigated. The NPKM treatment achieved the highest mean annual yield of 12.2 t ha^-1 (68% higher than that of PK). Higher dry matter accumulation and nutrients absorption were observed during the middle-late growth period in the NPKM treatment, with higher panicle number per unit and filled-grain number per panicle. Its average nitrogen use efficiency was 36.3% and soil organic matter increased by 18.5% during the experimental period in the NPKM treatment, which were significantly higher than those in the NPK treatment. Organic manure application with chemical fertilizers increased the yield and nitrogen use efficiency of rice, reduced the risk of environmental pollution and improved soil fertility greatly. It could be a good practical technique that protects the environment and raises the rice yield in this region. 展开更多
关键词 RICE chemical fertilizer organic manure nutrient absorption YIELD
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N_2O emissions from agricultural soils in the North China Plain: the effect of chemical nitrogen fertilizer and organic manure 被引量:6
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作者 DONG Yun\|she 1,2,3 , Dieter Scharffe 2, Manfred Domroes 3, QI Yu chun 1, ZHANG Shen 1 (1. Institute of Geographic Sciences and Natural Resources Research, Chinese Academy of Sciences, Beijing 100101, China E\|mail: dongys@dls.iog.ac.cn 2. M 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2000年第4期463-468,共6页
An enclosed chamber technique was used to measure N 2O emissions from intensively agricultural soils of the North China Plain during the periods of 1995—1996 and 1997—1998, to reflect distinct components of winter ... An enclosed chamber technique was used to measure N 2O emissions from intensively agricultural soils of the North China Plain during the periods of 1995—1996 and 1997—1998, to reflect distinct components of winter wheat and summer maize growing seasons. The results showed that the continuous application of fertilizer in agricultural soils increased N\-2O emissions by a factor of 24.1—28.1, the calculated annual chemical N fertilizer\|transformed N\-2O\|N emissions was 0.67%. Our results indicated that the application of organic manure also had a significant influence on soil N 2O emissions, which combined with the use of chemical N increased about 20% in a year. It was calculated that there were about 0.11% N of organic manure transformed as N 2O N. Annual mean N 2O emission from our study area of fertilized soils was estimated to be 57.1 μgN 2O/(m 2·h). A weak correlation was also found between N 2O emissions and soil available nitrogen content NH + 4. 展开更多
关键词 N_2O EMISSIONS the North China Plain agricultural soils chemical nitrogen organic manure
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Partial organic substitution weakens the negative effect of chemical fertilizer on soil micro-food webs 被引量:3
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作者 LIU Han-wen ZHANG Xiao-ke +2 位作者 ZHANG Gui-zong KOU Xin-chang LIANG Wen-ju 《Journal of Integrative Agriculture》 SCIE CAS CSCD 2022年第10期3037-3050,共14页
Soil biotic communities play vital roles in enhancing soil nutrient cycling and soil fertility.Long-term excessive nitrogen(N)application is disadvantageous to the stability of soil food webs and affects arable soil h... Soil biotic communities play vital roles in enhancing soil nutrient cycling and soil fertility.Long-term excessive nitrogen(N)application is disadvantageous to the stability of soil food webs and affects arable soil health and sustainable utilization.Proper organic substitution is essential to improve soil health and alleviate the disadvantages of excessive chemical fertilization.However,the biological effects of various organic amendments on soil micro-food webs are poorly understood.In order to explore the effects of various organic amendments including stover,biochar and manure on soil micro-food webs(microbial and nematode communities),a field plot experiment with maize having five treatments viz.,100%urea(100%N),70%urea(70%N),70%urea plus stover(Stover),70%urea plus cattle manure(Manure)and 70%urea plus biochar(Biochar)was conducted.Manure treatment increased the carbon(C)to N use efficiency of soil microbes,which contributed to the retention of soil C,while Biochar treatment elevated soil organic C(SOC)and soil p H.Additionally,Biochar treatment mitigated the negative effects of soil acidification on the soil micro-food web and reduced the abundance of plant parasites.Overall,the biological effect of organic amendments was distinguished from chemical fertilization(100%N and 70%N)through principal co-ordinates analysis.Negative relationships among soil properties,microbial and nematode biomass in the 100%N treatment were diminished in treatments where chemical fertilizer was reduced.The bottom-up effects on soil food webs were observed in organic substitution treatments.In conclusion,organic amendments improved soil fertility by regulating soil microbial and nematode communities in the cropland ecosystem,alleviated the negative effects of chemical fertilizer on the micro-food webs and controlled the trophic cascades among soil biota. 展开更多
关键词 microbial community nematode community soil micro-food webs organic substitution chemical fertilizer soil health
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Non-target Screening and Quantitation of Organic Chlorides in Oilfield Chemicals with Comprehensive Two Dimensional Gas Chromatography Coupled with Time of Flight Mass Spectrometry 被引量:1
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作者 Zheng Kewen Guo Rui +5 位作者 Ren Guofa Xia Lingyan Xiong Wei Zhang Jin Chu Xiaodong Yu Zhiqiang 《China Petroleum Processing & Petrochemical Technology》 SCIE CAS 2017年第4期65-71,共7页
Advanced analytical methodology based on comprehensive two-dimensional gas chromatography-time of flight mass spectrometry(GC×GC-TOFMS) is proposed for investigation of organic chlorides in different oilfield che... Advanced analytical methodology based on comprehensive two-dimensional gas chromatography-time of flight mass spectrometry(GC×GC-TOFMS) is proposed for investigation of organic chlorides in different oilfield chemicals.The target screening was initially carried out on 8 suspected organic chlorides by evaluating the capability of the enhanced separation and reliable identification at a trace concentration. GC×GC-TOFMS allowed for the fast and automated analysis of organic chlorides at a level of 200 μg/L. This method was subsequently applied for non-target screening of organic chlorides in different oilfield chemicals at various locations across China. 22 organic chlorides were identified and verified by comparison with pure standards in the mixed sample. Finally, this method was used to determine the content of the organic chlorides in individual samples. The result showed that the organic chloride levels in 19 of the 39 tested oilfield chemicals were above the threshold limit of 1.0 mg/L. 展开更多
关键词 GC×GC-TOFMS non-target SCREENING OILFIELD chemicals organic chlorides QUANTITATION
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In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system 被引量:1
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作者 杨亿斌 柳铭岗 +12 位作者 陈伟杰 韩小标 陈杰 林秀其 林佳利 罗慧 廖强 臧文杰 陈崟松 邱运灵 吴志盛 刘扬 张佰君 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第9期362-366,共5页
In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition(MOCVD) system. The r... In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition(MOCVD) system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses(tensile and compressive) during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method. 展开更多
关键词 stresses metal organic chemical vapor deposition wafer bowing in-situ reflectivity mapping
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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition 被引量:1
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作者 黎明 王勇 +1 位作者 王凯明 刘纪美 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第3期597-601,共5页
High-performance low-leakage-current A1GaN/GaN high electron mobility transistors (HEMTs) on silicon (111) sub- strates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium ... High-performance low-leakage-current A1GaN/GaN high electron mobility transistors (HEMTs) on silicon (111) sub- strates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated. 展开更多
关键词 AlGaN/GaN HEMTs low-leakage current metal organic chemical vapor deposition Mg-dopedbuffer layer
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1.0μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition 被引量:1
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作者 高成 李海鸥 +1 位作者 黄姣英 刁胜龙 《Journal of Central South University》 SCIE EI CAS 2012年第12期3444-3448,共5页
InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). Room temperature Hall mobilities of the 2-D... InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency (fT) and the maximum oscillation frequency (fmax) are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD. 展开更多
关键词 metamorphic device mental organic chemical vapor deposition high electron mobility transistors InP substrate INGAAS
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Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition 被引量:1
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作者 任鹏 韩刚 +6 位作者 付丙磊 薛斌 张宁 刘喆 赵丽霞 王军喜 李晋闽 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第6期145-149,共5页
CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen (H2)/nitrogen (N2) and growth temperature of the selective area growth (SAG) method with metal organic chemical vapor deposit... CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen (H2)/nitrogen (N2) and growth temperature of the selective area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2:N2 ratio is 1:1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature. 展开更多
关键词 of or IS as RATE GAN Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal organic chemical Vapor Deposition by with
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Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition 被引量:2
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作者 李海鸥 黄伟 +2 位作者 邓泽华 邓小芳 刘纪美 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第6期530-533,共4页
The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported.... The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- ram. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6, Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device. 展开更多
关键词 GAAS METAMORPHIC high electron mobility transistor metal-organic chemical vapour deposition
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Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition 被引量:2
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作者 林志宇 张进成 +7 位作者 周昊 李小刚 孟凡娜 张琳霞 艾姗 许晟瑞 赵一 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第12期403-407,共5页
In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double A1N buffer layers. The buffer layer consists of a low-temperature (LT)... In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double A1N buffer layers. The buffer layer consists of a low-temperature (LT) A1N layer and a high-temperature (HT) A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper. 展开更多
关键词 GAN A1N buffer layer metal-organic chemical vapour deposition threading dislocations
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A Novel Oscillating Chemical Reaction Using Ninhydrin as Single Organic Substrate
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作者 Fu Wei YANG Jin Zhang GAO Wu YANG Kan Jun SUN 《Chinese Chemical Letters》 SCIE CAS CSCD 2006年第1期77-80,共4页
A novel oscillating chemical reaction using ninhydrin as a single organic substrate was represented in this paper. It distinguished from the classically catalyzed BZ oscillating chemical reaction due to there was no a... A novel oscillating chemical reaction using ninhydrin as a single organic substrate was represented in this paper. It distinguished from the classically catalyzed BZ oscillating chemical reaction due to there was no active methene (CH2=) and/or enol structure in the ninhydrin molecule, which served as single organic substrate. This suggested that the substrates used in catalyzed BZ reaction were not always the organic compounds containing active methene (CH2=) and/or enol structure and bromination process in this kind of catalyzed chemical oscillating reaction was not also necessary. 展开更多
关键词 Single organic substrate active methene enol structure oscillating chemical reaction.
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Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition
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作者 吉泽生 汪连山 +5 位作者 赵桂娟 孟钰淋 李方政 李辉杰 杨少延 王占国 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第7期420-425,共6页
We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The sources of trimethylaluminium(TMAl) and ammonia were pulse introduced into the re... We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The sources of trimethylaluminium(TMAl) and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction(HRXRD) measurement showed that the full width at half maximum(FWHM) of the(0002) and(10-12) reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square(RMS) roughness was lower to 0.2 nm as tested by atomic force microscope(AFM). The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress. 展开更多
关键词 pulsed metal organic chemical vapor deposition growth mode MORPHOLOGY crystalline quality
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Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition
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作者 张雅超 周小伟 +6 位作者 许晟瑞 陈大正 王之哲 汪星 张金风 张进成 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第1期796-801,共6页
Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy... Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 x 10^13 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cruZ/V-s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. 展开更多
关键词 HETEROSTRUCTURE InGaN channel pulsed metal organic chemical vapor deposition
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High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition
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作者 王连锴 刘仁俊 +4 位作者 吕游 杨皓宇 李国兴 张源涛 张宝林 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第1期114-118,共5页
Orthogonal experiments of Ga Sb films growth on Ga As(001) substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition(LP-MOCVD) system. The crystallinities and mic... Orthogonal experiments of Ga Sb films growth on Ga As(001) substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition(LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized Ga Sb thin film has a narrow full width at half maximum(358 arc sec) of the(004) ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of Ga Sb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline Ga Sb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices. 展开更多
关键词 crystal growth metal–organic chemical vapor deposition thin films
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