Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and ...Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells.The electric field passivated layer n^+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ.It is indicated that the n^+-a-Si: H layer with wider band gap can reduce the light absorption on the front side efficaciously,which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc.The highly doped n^+-a-Si: H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation.It is noteworthy that when the electric field intensity exceeds 1.3 × 10^5 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%.In this study, the IBC-SHJ solar cell with a front n^+-a-Si: H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.展开更多
Recycling useful materials such as Ag, Al, Sn, Cu and Si from waste silicon solar cell chips is a sustainable project to slow down the ever-growing amount of waste crystalline-silicon photovoltaic panels. However, the...Recycling useful materials such as Ag, Al, Sn, Cu and Si from waste silicon solar cell chips is a sustainable project to slow down the ever-growing amount of waste crystalline-silicon photovoltaic panels. However, the recovery cost of the above-mentioned materials from silicon chips via acid-alkaline treatments outweights the gain economically.Herein, we propose a new proof-of-concept to fabricate Si-based anodes with waste silicon chips as raw materials.Nanoparticles from waste silicon chips were prepared with the high-energy ball milling followed by introducing carbon nanotubes and N-doped carbon into the nanoparticles, which amplifies the electrochemical properties. It is explored that Al and Ag elements influenced electrochemical performance respectively. The results showed that the Al metal in the composite possesses an adverse impact on the electrochemical performance. After removing Al, the composite was confirmed to possess a pronounced durable cycling property due to the presence of Ag, resulting in significantly more superior property than the composite having both Al and Ag removed.展开更多
Amorphous–microcrystalline MoS_(2)thin films are fabricated using the sol-gel method to produce MoS_(2)/Si-based solar cells. The generation mechanisms of the S-shaped current density–voltage(J–V) curves of the sol...Amorphous–microcrystalline MoS_(2)thin films are fabricated using the sol-gel method to produce MoS_(2)/Si-based solar cells. The generation mechanisms of the S-shaped current density–voltage(J–V) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped J–V curve, a MoS_(2)film and a p^(+) layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p–n junction between the p-Si and the MoS_(2)film as well as ohmic contacts between the MoS_(2)film and the ITO, improving the S-shaped J–V curve. As a result of the high doping characteristics and the high work function of the p^(+) layer, a high–low junction is formed between the p;and p layers along with ohmic contacts between the p;layer and the Ag electrode. Consequently,the S-shaped J–V curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p–n junction rectification characteristics and achieves a high power-conversion efficiency(CE) of 7.55%. The findings of this study may improve the application of MoS_(2)thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.展开更多
Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick ...Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.展开更多
Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit....Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.展开更多
Si-based nanomaterials are some new photo-elctronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e.g. Si light emitting diode, Si l...Si-based nanomaterials are some new photo-elctronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e.g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nano-scale porous silicon (ps), Si nanocrystalline embedded SiO2 (SiOx, x 【 2.0) matrices, Si nanoquantum dot and Si/SiO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.展开更多
Si-based solar cells,which have the advantages of high efficiency,low manufacturing costs,and outstanding stability,are dominant in the photovoltaic market.Currently,state-of-the-art Si-based solar cells are approachi...Si-based solar cells,which have the advantages of high efficiency,low manufacturing costs,and outstanding stability,are dominant in the photovoltaic market.Currently,state-of-the-art Si-based solar cells are approaching the practical limit of efficiency.Constructing Si-based tandem solar cells is one available pathway to break the theoretical efficiency limit of single-junction silicon solar cells.Various top cells have been explored recently in the construction of Si-based tandem devices.Nevertheless,many challenges still stand in the way of extensive commercial application of Si-based tandem solar cells.Herein,we summarize the recent progress of representative Si-based tandem solar cells with different top cells,such as III-V solar cells,wide-bandgap perovskite solar cells,cadmium telluride(CdTe)-related solar cells,Cu(In,Ga)(Se,S)2(CIGS)-related solar cells,and amorphous silicon(a-Si)solar cells,and we analyze the main bottlenecks for their next steps of development.Subsequently,we suggest several potential candidate top cells for Si-based tandem devices,such as Sb2S3,Se,CdSe,and Cu2O.These materials have great potential for the development of high-performance and low-cost Si-based tandem solar cells in the future.展开更多
Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology...Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as： （1） the nature of indirect band gap of Ge; （2） the epitaxy of dislocation-free Ge layers on Si substrate; and （3） the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on- insulator （GOI） materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n＋p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.展开更多
It has been well known that the development of microelectronic and integrated circuit （IC）, mainly based on silicon materials, have changed the way of our life dramatically and accelerated the development and innova...It has been well known that the development of microelectronic and integrated circuit （IC）, mainly based on silicon materials, have changed the way of our life dramatically and accelerated the development and innovation of new technologies. With the increase of integration density in ICs, the gate lengths of transistors are now scaled down to 7 nm, leading to fundamental challenges to keep up with the Moore＇s law. One possible solution is to integrate optical circuits into the Si microelectronic platform to achieve high density electronic-photonic integration.展开更多
Silicon monoxide(SiO)(silicon[Si]mixed with silicon dioxide[SiO_(2)])/graphite(Gr)composite material is one of the most commercially promising anode materials for the next generation of high-energy-density lithium-ion...Silicon monoxide(SiO)(silicon[Si]mixed with silicon dioxide[SiO_(2)])/graphite(Gr)composite material is one of the most commercially promising anode materials for the next generation of high-energy-density lithium-ion batteries.The major bottleneck for SiO/Gr composite anode is the poor cyclability arising from the stress/strain behaviors due to the mismatch between two heterogenous materials during the lithiation/delithiation process.To date,a meticulous and quantitative understanding of the highly nonlinear coupling behaviors of such materials is still lacking.Herein,an electro–chemo–mechanics-coupled detailed model containing particle geometries is established.The underlying mechanism of the regulation between SiO and Gr components during electrochemical cycling is quantitatively revealed.We discover that increasing the SiO weight percentage(wt%)reduces the utilization efficiency of the active materials at the same 1C rate charging and enhances the hindering effects of stress-driven flux on diffusion.In addition,the mechanical constraint demonstrates a balanced effect on the overall performance of cells and the local behaviors of particles.This study provides new insights into the fundamental interactions between SiO and Gr materials and advances the investigation methodology for the design and evaluation of next-generation high-energydensity batteries.展开更多
Green energy storage devices play vital roles in reducing fossil fuel emissions and achieving carbon neutrality by 2050.Growing markets for portable electronics and electric vehicles create tremendous demand for advan...Green energy storage devices play vital roles in reducing fossil fuel emissions and achieving carbon neutrality by 2050.Growing markets for portable electronics and electric vehicles create tremendous demand for advanced lithium-ion batteries(LIBs)with high power and energy density,and novel electrode material with high capacity and energy density is one of the keys to next-generation LIBs.Silicon-based materials,with high specific capacity,abundant natural resources,high-level safety and environmental friendliness,are quite promising alternative anode materials.However,significant volume expansion and redundant side reactions with electrolytes lead to active lithium loss and decreased coulombic efficiency(CE)of silicon-based material,which hinders the commercial application of silicon-based anode.Prelithiation,preembedding extra lithium ions in the electrodes,is a promising approach to replenish the lithium loss during cycling.Recent progress on prelithiation strategies for silicon-based anode,including electrochemical method,chemical method,direct contact method,and active material method,and their practical potentials are reviewed and prospected here.The development of advanced Si-based material and prelithiation technologies is expected to provide promising approaches for the large-scale application of silicon-based materials.展开更多
Although silicon（Si） is ubiquitous in soil and plant, evidence is still lacking that Si is essential for higher plants. However, it has been well documented that Si is beneficial for healthy growth of many plant spe...Although silicon（Si） is ubiquitous in soil and plant, evidence is still lacking that Si is essential for higher plants. However, it has been well documented that Si is beneficial for healthy growth of many plant species. Si can promote plant mechanical strength, light interception, as well as resistance to various forms of abiotic and biotic stress, thus improving both yield and quality. Indeed, application of Si fertilizer is a rather common agricultural practice in many countries and regions. As the beneficial effects provided by Si are closely correlated with Si accumulation level in plant, elucidating the possible mechanisms of Si uptake and transport in plants is extremely important to utilize the Si-induced beneficial effects in plants. Recently, rapid progress has been made in unveiling molecular mechanisms of Si uptake and transport in plants. Based on the cooperation of Si influx channels and efflux transporters, a model to decipher Si uptake, transport and distribution system in higher plants has been developed, which involves uptake and radial transport in root, xylem and inter-vascular transport and xylem unloading and deposition in leaf. In this paper, we overviewed the updated knowledge concerning Si uptake, transport and accumulation and its significance for the major crops of agricultural importance and highlighted the further research needs as well.展开更多
A dual-shell Si/TiO2/CFs composite was synthesized through a simple method to deal with the intrinsic drawbacks of silicon-based anode,in terms of huge volume change,unstable SEI films,and low electronic and ionic con...A dual-shell Si/TiO2/CFs composite was synthesized through a simple method to deal with the intrinsic drawbacks of silicon-based anode,in terms of huge volume change,unstable SEI films,and low electronic and ionic conductivity.The inner rigid TiO2 shell alleviates the huge volume expansion of the nano silicon,and the outer resilient carbon fiber,which is porous and staggered,is beneficial to the rapid transport of electrons and ions.The as-prepared Si/TiO2/CFs composite displays a superior reversible specific capacity of 583.4 mA·h/g,high rate capability and decent cycling performance.The dual-shell encapsulation method provides a guideline for other anode materials with huge volume expansion during the cycling process.展开更多
High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition （UHV/CVD）. This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivitie...High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition （UHV/CVD）. This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA/cm^2 and 29.4 mA/cm^2 at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30μm, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.展开更多
Micro-optical electromechanical systems(MOEMS)combine the merits of micro-electromechanical systems(MEMS)and micro-optics to enable unique optical functions for a wide range of advanced applications.Using simple exter...Micro-optical electromechanical systems(MOEMS)combine the merits of micro-electromechanical systems(MEMS)and micro-optics to enable unique optical functions for a wide range of advanced applications.Using simple external electromechanical control methods,such as electrostatic,magnetic or thermal effects,Si-based MOEMS can achieve precise dynamic optical modulation.In this paper,we will briefly review the technologies and applications of Si-based MOEMS.Their basic working principles,advantages,general materials and micromachining fabrication technologies are introduced concisely,followed by research progress of advanced Si-based MOEMS devices,including micromirrors/micromirror arrays,micro-spectrometers,and optical/photonic switches.Owing to the unique advantages of Si-based MOEMS in spatial light modulation and high-speed signal processing,they have several promising applications in optical communications,digital light processing,and optical sensing.Finally,future research and development prospects of Si-based MOEMS are discussed.展开更多
Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices.However,the current method of calculating band offset is difficult to apply directly to the la...Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices.However,the current method of calculating band offset is difficult to apply directly to the large-lattice-mismatched and heterovalent semiconductors because of the existing electric field and large strain at the interfaces.Here,we proposed a modified method to calculate band offsets for such systems,in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and the insertion of unidirectional strain structures as transitions,respectively.Taking the Si and III-V systems as examples,the results have the same accuracy as what is a widely used method for small-lattice-mismatched systems,and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems.Furthermore,by systematically studying the heterojunctions of Si and III-V semiconductors along different directions,it is found that the band offsets of Si/InAs and Si/InSb systems in[100],[110]and[111]directions belong to the type I,and could be beneficial for silicon-based luminescence performance.Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors,and could provide theoretical support for the design of the high-performance silicon-based light sources.展开更多
Silicon(Si)-based solid-state batteries(Si-SSBs)are attracting tremendous attention because of their high energy density and unprecedented safety,making them become promising candidates for next-generation energy stor...Silicon(Si)-based solid-state batteries(Si-SSBs)are attracting tremendous attention because of their high energy density and unprecedented safety,making them become promising candidates for next-generation energy storage systems.Nevertheless,the commercialization of Si-SSBs is significantly impeded by enormous challenges including large volume variation,severe interfacial problems,elusive fundamental mechanisms,and unsatisfied electrochemical performance.Besides,some unknown electrochemical processes in Si-based anode,solid-state electrolytes(SSEs),and Si-based anode/SSE interfaces are still needed to be explored,while an in-depth understanding of solid–solid interfacial chemistry is insufficient in Si-SSBs.This review aims to summarize the current scientific and technological advances and insights into tackling challenges to promote the deployment of Si-SSBs.First,the differences between various conventional liquid electrolyte-dominated Si-based lithium-ion batteries(LIBs)with Si-SSBs are discussed.Subsequently,the interfacial mechanical contact model,chemical reaction properties,and charge transfer kinetics(mechanical–chemical kinetics)between Si-based anode and three different SSEs(inorganic(oxides)SSEs,organic–inorganic composite SSEs,and inorganic(sulfides)SSEs)are systemically reviewed,respectively.Moreover,the progress for promising inorganic(sulfides)SSE-based Si-SSBs on the aspects of electrode constitution,three-dimensional structured electrodes,and external stack pressure is highlighted,respectively.Finally,future research directions and prospects in the development of Si-SSBs are proposed.展开更多
A novel type of microcavity organic light-emitting diode based on a porous silicon distributed Bragg reflector (PS-DBR) has first been achieved and its microstructure, optical, and electrical properties have also been...A novel type of microcavity organic light-emitting diode based on a porous silicon distributed Bragg reflector (PS-DBR) has first been achieved and its microstructure, optical, and electrical properties have also been investigated in detail. The microcavity is made up of the central active organic multilayer sandwiched between a top silver film and a bottom PS-DBR, formed by electrochemical etching of p++-Si substrate. The field- emission scanning electron microscopy cross-section images show the nanometer-scale layered structure and flat interfaces inside the microcavity. The reflectivity (relative to an Al mirror) of the PS-DBR is up to 99%, and the stopband is about 160 nm wide. Resonant cavity mode appears as a tip in the reflectivity spectrum of the Si-based organic multilayer films, which is a symbol that the Si-based organic multilayer structure is indeed a microcavity. The peak widths of the electroluminescence (EL) spectra from the cavities emitting green and red light are greatly reduced from 85 nm and 70 nm to 8 nm and 12 nm, respectively, as compared with those measured from non-cavity structures. Note that the EL emission from the cavity devices is single-mode, and the off-resonant optical modes are highly suppressed. Moreover, increases of a factor of about 6 and 4 of the resonant peak intensity from the cavities emitting green and red light are also observed, respectively. In addition, the current-brightness-voltage characteristics and effect parameters on the lifetime of the cavity devices are also discussed. The present technique for obtaining enhanced EL emission from Si-based organic microcavity may also be another novel effective method for realizing Si-based optoelectronics device integration.展开更多
Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting dev...Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting devices fabricated by embedding Ge self-assembled quantum dots into optical microcavities. Ge self-assembled quantum dots emit light in the telecommunication wavelength range from 1.3 to 1.6 pro, for which Si is transparent. Ge self- assembled quantum dots were grown on silicon-on- insulator （SOI） by molecular beam epitaxy （MBE） in Stranski-Krastanov （S-K） mode. Then, electron beam lithography （EBL） was used to define the pattern of optical microcavities on the wafer. Finally, the pattern was transferred onto the Si/Ge slab by inductive coupled plasma （ICP） dry etching. Room-temperature photolumi- nescence （PL） was used to characterize the light-emitting properties of fabricated devices. The results showed that strong resonant light emission was observed in different optical microcavities. Significant enhancement of the intensity was obtained by the optical resonance. Based on the results of PL, we designed and fabricated current- injected light-emitting devices based on Ge self-assembled quantum dots in optical microcavities. Room-temperature resonant light emission was observed from Ge dots in a 3.8 μm microdisk resonator.展开更多
基金Project supported by the National Key Research Program of China(Grant Nos.2018YFB1500500 and 2018YFB1500200)the National Natural Science Foundation of China(Grant Nos.51602340,51702355,and 61674167)JKW Project,China(Grant No.31512060106)
文摘Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells.The electric field passivated layer n^+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ.It is indicated that the n^+-a-Si: H layer with wider band gap can reduce the light absorption on the front side efficaciously,which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc.The highly doped n^+-a-Si: H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation.It is noteworthy that when the electric field intensity exceeds 1.3 × 10^5 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%.In this study, the IBC-SHJ solar cell with a front n^+-a-Si: H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.
基金Project(51774343) supported by the National Natural Science Foundation of China。
文摘Recycling useful materials such as Ag, Al, Sn, Cu and Si from waste silicon solar cell chips is a sustainable project to slow down the ever-growing amount of waste crystalline-silicon photovoltaic panels. However, the recovery cost of the above-mentioned materials from silicon chips via acid-alkaline treatments outweights the gain economically.Herein, we propose a new proof-of-concept to fabricate Si-based anodes with waste silicon chips as raw materials.Nanoparticles from waste silicon chips were prepared with the high-energy ball milling followed by introducing carbon nanotubes and N-doped carbon into the nanoparticles, which amplifies the electrochemical properties. It is explored that Al and Ag elements influenced electrochemical performance respectively. The results showed that the Al metal in the composite possesses an adverse impact on the electrochemical performance. After removing Al, the composite was confirmed to possess a pronounced durable cycling property due to the presence of Ag, resulting in significantly more superior property than the composite having both Al and Ag removed.
基金Project supported by the Science and Technology Research Project of Hebei Province Colleges and Universities (Grant No. QN2020113)Tangshan Applied Basic Research Project (Grant No. 19130227g)。
文摘Amorphous–microcrystalline MoS_(2)thin films are fabricated using the sol-gel method to produce MoS_(2)/Si-based solar cells. The generation mechanisms of the S-shaped current density–voltage(J–V) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped J–V curve, a MoS_(2)film and a p^(+) layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p–n junction between the p-Si and the MoS_(2)film as well as ohmic contacts between the MoS_(2)film and the ITO, improving the S-shaped J–V curve. As a result of the high doping characteristics and the high work function of the p^(+) layer, a high–low junction is formed between the p;and p layers along with ohmic contacts between the p;layer and the Ag electrode. Consequently,the S-shaped J–V curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p–n junction rectification characteristics and achieves a high power-conversion efficiency(CE) of 7.55%. The findings of this study may improve the application of MoS_(2)thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.
文摘Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.
文摘Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.
文摘Si-based nanomaterials are some new photo-elctronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e.g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nano-scale porous silicon (ps), Si nanocrystalline embedded SiO2 (SiOx, x 【 2.0) matrices, Si nanoquantum dot and Si/SiO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.
基金supported by the National Natural Science Foundation of China(Grant Nos.61725401 and 61904058)the National Key R&D Program of China(No.2016YFA0204000)+2 种基金the Innovation Fund of Wuhan National Laboratory for Optoelectronics,National Postdoctoral Program for Innovative Talent(No.BX20190127)China Postdoctoral Science Foundation Project(No.2019M662623)the Graduates' Innovation Fund of Huazhong University of Science and Technology(No.2019ygscxcy022).
文摘Si-based solar cells,which have the advantages of high efficiency,low manufacturing costs,and outstanding stability,are dominant in the photovoltaic market.Currently,state-of-the-art Si-based solar cells are approaching the practical limit of efficiency.Constructing Si-based tandem solar cells is one available pathway to break the theoretical efficiency limit of single-junction silicon solar cells.Various top cells have been explored recently in the construction of Si-based tandem devices.Nevertheless,many challenges still stand in the way of extensive commercial application of Si-based tandem solar cells.Herein,we summarize the recent progress of representative Si-based tandem solar cells with different top cells,such as III-V solar cells,wide-bandgap perovskite solar cells,cadmium telluride(CdTe)-related solar cells,Cu(In,Ga)(Se,S)2(CIGS)-related solar cells,and amorphous silicon(a-Si)solar cells,and we analyze the main bottlenecks for their next steps of development.Subsequently,we suggest several potential candidate top cells for Si-based tandem devices,such as Sb2S3,Se,CdSe,and Cu2O.These materials have great potential for the development of high-performance and low-cost Si-based tandem solar cells in the future.
基金supported in part by the National Natural Science Foundation(Nos.61036003,61435013)the Major State Basic Research Development Program of China(No.2013CB632103)
文摘Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as： （1） the nature of indirect band gap of Ge; （2） the epitaxy of dislocation-free Ge layers on Si substrate; and （3） the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on- insulator （GOI） materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n＋p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.
文摘It has been well known that the development of microelectronic and integrated circuit （IC）, mainly based on silicon materials, have changed the way of our life dramatically and accelerated the development and innovation of new technologies. With the increase of integration density in ICs, the gate lengths of transistors are now scaled down to 7 nm, leading to fundamental challenges to keep up with the Moore＇s law. One possible solution is to integrate optical circuits into the Si microelectronic platform to achieve high density electronic-photonic integration.
文摘Silicon monoxide(SiO)(silicon[Si]mixed with silicon dioxide[SiO_(2)])/graphite(Gr)composite material is one of the most commercially promising anode materials for the next generation of high-energy-density lithium-ion batteries.The major bottleneck for SiO/Gr composite anode is the poor cyclability arising from the stress/strain behaviors due to the mismatch between two heterogenous materials during the lithiation/delithiation process.To date,a meticulous and quantitative understanding of the highly nonlinear coupling behaviors of such materials is still lacking.Herein,an electro–chemo–mechanics-coupled detailed model containing particle geometries is established.The underlying mechanism of the regulation between SiO and Gr components during electrochemical cycling is quantitatively revealed.We discover that increasing the SiO weight percentage(wt%)reduces the utilization efficiency of the active materials at the same 1C rate charging and enhances the hindering effects of stress-driven flux on diffusion.In addition,the mechanical constraint demonstrates a balanced effect on the overall performance of cells and the local behaviors of particles.This study provides new insights into the fundamental interactions between SiO and Gr materials and advances the investigation methodology for the design and evaluation of next-generation high-energydensity batteries.
基金This work was supported by Guangdong Basic and Applied Basic Research Foundation(2019A1515110530,2022A1515010486)Shenzhen Science and Technology Program(JCYJ20210324140804013)Tsinghua Shenzhen International Graduate School(QD2021005N,JC2021007).
文摘Green energy storage devices play vital roles in reducing fossil fuel emissions and achieving carbon neutrality by 2050.Growing markets for portable electronics and electric vehicles create tremendous demand for advanced lithium-ion batteries(LIBs)with high power and energy density,and novel electrode material with high capacity and energy density is one of the keys to next-generation LIBs.Silicon-based materials,with high specific capacity,abundant natural resources,high-level safety and environmental friendliness,are quite promising alternative anode materials.However,significant volume expansion and redundant side reactions with electrolytes lead to active lithium loss and decreased coulombic efficiency(CE)of silicon-based material,which hinders the commercial application of silicon-based anode.Prelithiation,preembedding extra lithium ions in the electrodes,is a promising approach to replenish the lithium loss during cycling.Recent progress on prelithiation strategies for silicon-based anode,including electrochemical method,chemical method,direct contact method,and active material method,and their practical potentials are reviewed and prospected here.The development of advanced Si-based material and prelithiation technologies is expected to provide promising approaches for the large-scale application of silicon-based materials.
基金supported by the National Natural Science Foundation of China (31572191 and 31772387)the Serbian Ministry of Education, Science and Technological Development (173028)
文摘Although silicon（Si） is ubiquitous in soil and plant, evidence is still lacking that Si is essential for higher plants. However, it has been well documented that Si is beneficial for healthy growth of many plant species. Si can promote plant mechanical strength, light interception, as well as resistance to various forms of abiotic and biotic stress, thus improving both yield and quality. Indeed, application of Si fertilizer is a rather common agricultural practice in many countries and regions. As the beneficial effects provided by Si are closely correlated with Si accumulation level in plant, elucidating the possible mechanisms of Si uptake and transport in plants is extremely important to utilize the Si-induced beneficial effects in plants. Recently, rapid progress has been made in unveiling molecular mechanisms of Si uptake and transport in plants. Based on the cooperation of Si influx channels and efflux transporters, a model to decipher Si uptake, transport and distribution system in higher plants has been developed, which involves uptake and radial transport in root, xylem and inter-vascular transport and xylem unloading and deposition in leaf. In this paper, we overviewed the updated knowledge concerning Si uptake, transport and accumulation and its significance for the major crops of agricultural importance and highlighted the further research needs as well.
基金Project(51772331)supported by the National Natural Science Foundation of ChinaProject(2018YFB1106000)supported by the National Key Technologies R&D Program of China
文摘A dual-shell Si/TiO2/CFs composite was synthesized through a simple method to deal with the intrinsic drawbacks of silicon-based anode,in terms of huge volume change,unstable SEI films,and low electronic and ionic conductivity.The inner rigid TiO2 shell alleviates the huge volume expansion of the nano silicon,and the outer resilient carbon fiber,which is porous and staggered,is beneficial to the rapid transport of electrons and ions.The as-prepared Si/TiO2/CFs composite displays a superior reversible specific capacity of 583.4 mA·h/g,high rate capability and decent cycling performance.The dual-shell encapsulation method provides a guideline for other anode materials with huge volume expansion during the cycling process.
基金Project supported by the National High-Technology Research and Development Program of China (Grant No 2006AA03Z415)the Major State Basic Program of China (Grant No 2007CB613404)the National Natural Science Foundation of China(Grant No 60676005)
文摘High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition （UHV/CVD）. This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA/cm^2 and 29.4 mA/cm^2 at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30μm, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.
基金supported by the National Natural Science Foundation of China under Grant No.61975016the Science and Technology Project of Guangdong(2020B010190001)+2 种基金Natural Science Foundation of Beijing Municipality(1212013 and Z190006)Beijing Municipal Science&Technology Commission,Administrative Commission of Zhongguancun Science Park No.Z211100004821009Cultivation Project for Basic Research and Innovation of Yanshan University No.2021LGQN021.
文摘Micro-optical electromechanical systems(MOEMS)combine the merits of micro-electromechanical systems(MEMS)and micro-optics to enable unique optical functions for a wide range of advanced applications.Using simple external electromechanical control methods,such as electrostatic,magnetic or thermal effects,Si-based MOEMS can achieve precise dynamic optical modulation.In this paper,we will briefly review the technologies and applications of Si-based MOEMS.Their basic working principles,advantages,general materials and micromachining fabrication technologies are introduced concisely,followed by research progress of advanced Si-based MOEMS devices,including micromirrors/micromirror arrays,micro-spectrometers,and optical/photonic switches.Owing to the unique advantages of Si-based MOEMS in spatial light modulation and high-speed signal processing,they have several promising applications in optical communications,digital light processing,and optical sensing.Finally,future research and development prospects of Si-based MOEMS are discussed.
基金This work was supported by the National Key Research and Development Program of China(Grant No.2018YFB2200100)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)+1 种基金the National Natural Science Foundation of China(Grant No.118764347,11614003,11804333)H.X.D.was also supported by the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2017154).
文摘Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices.However,the current method of calculating band offset is difficult to apply directly to the large-lattice-mismatched and heterovalent semiconductors because of the existing electric field and large strain at the interfaces.Here,we proposed a modified method to calculate band offsets for such systems,in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and the insertion of unidirectional strain structures as transitions,respectively.Taking the Si and III-V systems as examples,the results have the same accuracy as what is a widely used method for small-lattice-mismatched systems,and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems.Furthermore,by systematically studying the heterojunctions of Si and III-V semiconductors along different directions,it is found that the band offsets of Si/InAs and Si/InSb systems in[100],[110]and[111]directions belong to the type I,and could be beneficial for silicon-based luminescence performance.Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors,and could provide theoretical support for the design of the high-performance silicon-based light sources.
基金supported by the National Natural Science Foundation of China(Grants Nos.52072323,52122211 and 21875155)the State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(Grant No.LAPS22005)+3 种基金the Frontier Exploration Projects of Longmen Laboratory(Grant No.LMQYTSKT008)the Shenzhen Technical Plan Project(No.JCYJ20220818101003008)the support of High-Tech Industrialization Project of Tan Kah Kee Innovation Laboratory(Grant No.RD2021010101)the“Double-First Class”Foundation of Materials and Intelligent Manufacturing Discipline of Xiamen University.L.Zhang and Q.Zhang acknowledge the support of the Nanqiang Young Top-notch Talent Fellowship at Xiamen University.
文摘Silicon(Si)-based solid-state batteries(Si-SSBs)are attracting tremendous attention because of their high energy density and unprecedented safety,making them become promising candidates for next-generation energy storage systems.Nevertheless,the commercialization of Si-SSBs is significantly impeded by enormous challenges including large volume variation,severe interfacial problems,elusive fundamental mechanisms,and unsatisfied electrochemical performance.Besides,some unknown electrochemical processes in Si-based anode,solid-state electrolytes(SSEs),and Si-based anode/SSE interfaces are still needed to be explored,while an in-depth understanding of solid–solid interfacial chemistry is insufficient in Si-SSBs.This review aims to summarize the current scientific and technological advances and insights into tackling challenges to promote the deployment of Si-SSBs.First,the differences between various conventional liquid electrolyte-dominated Si-based lithium-ion batteries(LIBs)with Si-SSBs are discussed.Subsequently,the interfacial mechanical contact model,chemical reaction properties,and charge transfer kinetics(mechanical–chemical kinetics)between Si-based anode and three different SSEs(inorganic(oxides)SSEs,organic–inorganic composite SSEs,and inorganic(sulfides)SSEs)are systemically reviewed,respectively.Moreover,the progress for promising inorganic(sulfides)SSE-based Si-SSBs on the aspects of electrode constitution,three-dimensional structured electrodes,and external stack pressure is highlighted,respectively.Finally,future research directions and prospects in the development of Si-SSBs are proposed.
基金supported by the Chinese National Key Basic Research Special Fund(Grant No.2001CB610408)Science and Technology of Chongqing Municipality(Grant No.2003-7934).
文摘A novel type of microcavity organic light-emitting diode based on a porous silicon distributed Bragg reflector (PS-DBR) has first been achieved and its microstructure, optical, and electrical properties have also been investigated in detail. The microcavity is made up of the central active organic multilayer sandwiched between a top silver film and a bottom PS-DBR, formed by electrochemical etching of p++-Si substrate. The field- emission scanning electron microscopy cross-section images show the nanometer-scale layered structure and flat interfaces inside the microcavity. The reflectivity (relative to an Al mirror) of the PS-DBR is up to 99%, and the stopband is about 160 nm wide. Resonant cavity mode appears as a tip in the reflectivity spectrum of the Si-based organic multilayer films, which is a symbol that the Si-based organic multilayer structure is indeed a microcavity. The peak widths of the electroluminescence (EL) spectra from the cavities emitting green and red light are greatly reduced from 85 nm and 70 nm to 8 nm and 12 nm, respectively, as compared with those measured from non-cavity structures. Note that the EL emission from the cavity devices is single-mode, and the off-resonant optical modes are highly suppressed. Moreover, increases of a factor of about 6 and 4 of the resonant peak intensity from the cavities emitting green and red light are also observed, respectively. In addition, the current-brightness-voltage characteristics and effect parameters on the lifetime of the cavity devices are also discussed. The present technique for obtaining enhanced EL emission from Si-based organic microcavity may also be another novel effective method for realizing Si-based optoelectronics device integration.
基金Acknowledgements The authors would like to thank Prof. Usami from Tohoku University for his help in the growth of Ge quantum dots. This work was supported by the Fundamental Research Funds for the Central Universities of Huazhong University of Science and Technology （No. 2011TS022） and the National Natural Science Foundation of China （Grant No. 61177049）.
文摘Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting devices fabricated by embedding Ge self-assembled quantum dots into optical microcavities. Ge self-assembled quantum dots emit light in the telecommunication wavelength range from 1.3 to 1.6 pro, for which Si is transparent. Ge self- assembled quantum dots were grown on silicon-on- insulator （SOI） by molecular beam epitaxy （MBE） in Stranski-Krastanov （S-K） mode. Then, electron beam lithography （EBL） was used to define the pattern of optical microcavities on the wafer. Finally, the pattern was transferred onto the Si/Ge slab by inductive coupled plasma （ICP） dry etching. Room-temperature photolumi- nescence （PL） was used to characterize the light-emitting properties of fabricated devices. The results showed that strong resonant light emission was observed in different optical microcavities. Significant enhancement of the intensity was obtained by the optical resonance. Based on the results of PL, we designed and fabricated current- injected light-emitting devices based on Ge self-assembled quantum dots in optical microcavities. Room-temperature resonant light emission was observed from Ge dots in a 3.8 μm microdisk resonator.
