Cadmium zinc telluride (CdZnTe) semiconductor has applications in the detection of X-rays and gamma-rays at room temperature without having to use a cooling system. Chemical etching and chemo-mechanical polishing are ...Cadmium zinc telluride (CdZnTe) semiconductor has applications in the detection of X-rays and gamma-rays at room temperature without having to use a cooling system. Chemical etching and chemo-mechanical polishing are processes used to smoothen CdZnTe wafer during detector device fabrication. These processes reduce surface damages left after polishing the wafers. In this paper, we compare the effects of etching and chemo-mechanical polishing on CdZnTe nuclear detectors, using a solution of hydrogen bromide in hydrogen peroxide and ethylene glycol mixture. X-ray photoelectron spectroscopy (XPS) was used to monitor TeO2 on the wafer surfaces. Current-voltage and detector-response measurements were made to study the electrical properties and energy resolution. XPS results showed that the chemical etching process resulted in the formation of more TeO2 on the detector surfaces compared to chemo-mechanical polishing. The electrical resistivity of the detector is of the order of 1010 Ω-cm. The chemo-mechanical polishing process increased the leakage current more that chemical etching. For freshly treated surfaces, the etching process is more detrimental to the energy resolution compared to chemo-mechanically polishing.展开更多
Chemically vapor deposited diamond films were etched at different parameters using oxygen plasma produced by a DC （direct current） glow discharge and then polished by a modified mechanical polishing device. Scanning...Chemically vapor deposited diamond films were etched at different parameters using oxygen plasma produced by a DC （direct current） glow discharge and then polished by a modified mechanical polishing device. Scanning electron microscope, atomic force microscope and Raman spectrometer were used to evaluate the surface states of diamond films before and after polishing. It was found that a moderate plasma etching would produce a lot of etch pits and amorphous carbon on the top surface of diamond film. As a result, the quality and the efficiency of mechanical polishing have been enhanced remarkably.展开更多
We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of...We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.展开更多
为了提升电火花线切割(Wire cut Electric Discharge Machining,WEDM)加工后的TC4钛合金表面质量,减少表面重熔层厚度,采用不同浓度配比(1∶4、1∶6和1∶8)的HF-HNO_(3)酸蚀溶液对钛合金试件进行化学抛光处理。实验结果表明,HF-HNO_(3)...为了提升电火花线切割(Wire cut Electric Discharge Machining,WEDM)加工后的TC4钛合金表面质量,减少表面重熔层厚度,采用不同浓度配比(1∶4、1∶6和1∶8)的HF-HNO_(3)酸蚀溶液对钛合金试件进行化学抛光处理。实验结果表明,HF-HNO_(3)酸蚀溶液能使钛合金重熔层得到显著去除,表面微裂纹得到有效控制;当HF-HNO_(3)酸蚀溶液的浓度配比为1:6时,试件能获得最低的表面粗糙度和最大的表面粗糙度下降率,并且抛光前后钛合金表面元素含量发生了不同程度的变化,Ti、Al和V元素质量分数分别提高了21.5%、41.3%和13.2%,而O、C元素质量分数分别降低了82.5%和33.6%;HF-HNO_(3)酸蚀溶液可显著改善TC4钛合金试件电火花线切割加工后的表面缺陷。钛合金重熔层结构的主要成分与化学抛光后氧化膜的主要成分相似,但与氧化膜的结构不同,这对TC4钛合金试件表面质量提升具有重要意义。展开更多
文摘Cadmium zinc telluride (CdZnTe) semiconductor has applications in the detection of X-rays and gamma-rays at room temperature without having to use a cooling system. Chemical etching and chemo-mechanical polishing are processes used to smoothen CdZnTe wafer during detector device fabrication. These processes reduce surface damages left after polishing the wafers. In this paper, we compare the effects of etching and chemo-mechanical polishing on CdZnTe nuclear detectors, using a solution of hydrogen bromide in hydrogen peroxide and ethylene glycol mixture. X-ray photoelectron spectroscopy (XPS) was used to monitor TeO2 on the wafer surfaces. Current-voltage and detector-response measurements were made to study the electrical properties and energy resolution. XPS results showed that the chemical etching process resulted in the formation of more TeO2 on the detector surfaces compared to chemo-mechanical polishing. The electrical resistivity of the detector is of the order of 1010 Ω-cm. The chemo-mechanical polishing process increased the leakage current more that chemical etching. For freshly treated surfaces, the etching process is more detrimental to the energy resolution compared to chemo-mechanically polishing.
基金National Natural Science Foundation of China(No.50572075)
文摘Chemically vapor deposited diamond films were etched at different parameters using oxygen plasma produced by a DC （direct current） glow discharge and then polished by a modified mechanical polishing device. Scanning electron microscope, atomic force microscope and Raman spectrometer were used to evaluate the surface states of diamond films before and after polishing. It was found that a moderate plasma etching would produce a lot of etch pits and amorphous carbon on the top surface of diamond film. As a result, the quality and the efficiency of mechanical polishing have been enhanced remarkably.
文摘We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.
文摘为了提升电火花线切割(Wire cut Electric Discharge Machining,WEDM)加工后的TC4钛合金表面质量,减少表面重熔层厚度,采用不同浓度配比(1∶4、1∶6和1∶8)的HF-HNO_(3)酸蚀溶液对钛合金试件进行化学抛光处理。实验结果表明,HF-HNO_(3)酸蚀溶液能使钛合金重熔层得到显著去除,表面微裂纹得到有效控制;当HF-HNO_(3)酸蚀溶液的浓度配比为1:6时,试件能获得最低的表面粗糙度和最大的表面粗糙度下降率,并且抛光前后钛合金表面元素含量发生了不同程度的变化,Ti、Al和V元素质量分数分别提高了21.5%、41.3%和13.2%,而O、C元素质量分数分别降低了82.5%和33.6%;HF-HNO_(3)酸蚀溶液可显著改善TC4钛合金试件电火花线切割加工后的表面缺陷。钛合金重熔层结构的主要成分与化学抛光后氧化膜的主要成分相似,但与氧化膜的结构不同,这对TC4钛合金试件表面质量提升具有重要意义。
