Multi-phase nitrides bonded silicon carbide lintel blocks were prepared using industrial SiC(SiC≥98 mass%,3-0.5,≤0.5 and≤0.044 mm),Si powder(Si≥98 mass%,≤0.044 mm),and SiO2 micropowder(SiO2≥96 mass%,d50=0.15 pm)...Multi-phase nitrides bonded silicon carbide lintel blocks were prepared using industrial SiC(SiC≥98 mass%,3-0.5,≤0.5 and≤0.044 mm),Si powder(Si≥98 mass%,≤0.044 mm),and SiO2 micropowder(SiO2≥96 mass%,d50=0.15 pm)as raw materials,and calcium lignosulfonate as the additive,batching,mixing,and molding on a vibration pressure molding machine,drying and then firing at 1420℃for 10 h in high-purity N2.The apparent porosity,the bulk density,the cold modulus of rupture,the hot modulus of rupture,and the linear expansion coefficient of the samples were tested.The phase composition and the microstructure of the samples at different nitriding depths(50,100,and 150 mm)were analyzed by XRD and SEM.The field application effects of the blocks were studied.The results show that:(1)the multi-phase nitrides bonded silicon carbide refractories can dynamically adjust their own phase composition and minimize structural and thermal stresses,improving the service life of key parts of dry quenching furnaces;(2)calcium lignosulfonate can improve the nitriding micro-environment of multi-phase nitrides bonded silicon carbide lintel blocks,successfully increasing the effective nitriding thickness of the blocks to 300 mm;(3)Sinosteel LI RR provides a unique concept in the design of materials and block types as well as the stable and scientific overall structure,promoting the industrialization process of dry quenching furnaces with long service life in China.展开更多
Steam oxidation resistance of Si3N4 and Si2N2O as well as SiAlON bonded SiC refractories at 900℃was tested according to ASTM-C863.Phase composition and microstructure before and after oxidation were analyzed by XRD a...Steam oxidation resistance of Si3N4 and Si2N2O as well as SiAlON bonded SiC refractories at 900℃was tested according to ASTM-C863.Phase composition and microstructure before and after oxidation were analyzed by XRD and SEM.The results show that Si3N4 and Si2N2O bonded SiC refractory presents better steam oxidation resistance than SiAlON bonded SiC.For Si3N4 and Si2N2O bonded SiC,the oxidation speed is higher with more pronounced volume expansion in the early 100 h;afterwards,the volume expansion slows down gradually and starts to level off after 300 h.It is considered that the high silica glass phase formed during the oxidation covers Si3N4 and Si2N2O,and SiC as a protective layer and fills the open pores.But for SiAlON bonded SiC,the volume expands gradually and constantly with the increasing oxidation duration even after 500 h,due to the continuous formation of mullite transformed from oxidation products and Al2O3 in SiAlON.展开更多
Effect of SiO 2 content and sintering process on the composition and properties of Pure Carbon Reaction Bonded Silicon Carbide (PCRBSC) ceramics prepared with C-SiO 2 green body by infiltrating silicon was presented.T...Effect of SiO 2 content and sintering process on the composition and properties of Pure Carbon Reaction Bonded Silicon Carbide (PCRBSC) ceramics prepared with C-SiO 2 green body by infiltrating silicon was presented.The infiltrating mechanism of C-SiO 2 preform was also explored.The experimental results indicate that the shaping pressure increases with the addition of SiO 2 to the preform,and the pore size of the body turned finer and distributed in a narrower range,which is beneficial to decreasing the residual silicon content in the sintered materials and to avoiding shock off,thus increasing the conversion rate of SiC.SiO 2 was deoxidized by carbon at a high temperature and the gaseous SiO and CO produced are the main reason to the crack of the body at an elevated temperature.If the green body is deposited at 1800℃ in vacuum before infiltration crack will not be produced in the preform and fully dense RBSC can be obtained.The ultimate material has the following properties:a density of 3.05-3.12g/cm3,a strength of 580±32MPa and a hardness of (HRA)91-92.3.展开更多
Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resi...Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reaction-bonded is one of important sintering technology of ceramics structural parts. The preparation of reaction-bonded silicon carbide (RBSC) is based on a reaction sintering process, whereby a compacted body of α-SiC and carbon (graphite) powders is heated in contact with liquid silicon or gas silicon, which impregnates the body, converting the carbon (graphite) to β-SiC which bonds the original alpha grain. This process is characterized by low temperature and a short time sintering, and being appropriate to the preparation of large size and complex-shaped components, and so on. Besides, during compacting process of reaction sintering, it can maintain a stable dimension of ceramics parts. Therefore, the method of reaction-bonded silicon carbide ceramics has been identified as a technology suitable for producing complicated and highly exact dimensions’ ceramics parts. In this paper, the method of reaction-bonded silicon carbide was applied to the manufacturing of a complex-shaped spacecraft combustion chamber of SiC ceramics. SiC and carbon powder of 4～30 μm were chosen as the raw materials, green compacts containing appropriate wt.% carbon were formed using the mold press method, sintering was performed in a graphite electric furnace under an argon atmosphere. It was introduced in detail that the technological parameters and technological flow of reaction sintering silicon carbide ceramics. At the same time, physical and mechanical experiments such as bending strength, coefficient of thermal expansion, coefficient of thermal conductivity, gastight property, heat resisting property etc. have been carried out. The results demonstrated that spacecraft combustion chamber made from reaction sintering of silicon carbide ceramics is feasible and the results of experiment is satisfactory. The strength of high-temperature structural parts made by reaction sintered SiC varied with silicon content; Under the this article testing condition, the optimum silicon content is 10.5% for the part investigated. The method of reaction sintered SiC ceramics is suitable for manufacturing of complicated spacecraft parts with a working temperature of 1 500 ℃.展开更多
Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and ...Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C 1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).展开更多
The present paper discusses the development of the first and second order model for predicting the chemical etching variables, namely, etching rate, surface roughness and accuracy of advanced ceramics. The first and s...The present paper discusses the development of the first and second order model for predicting the chemical etching variables, namely, etching rate, surface roughness and accuracy of advanced ceramics. The first and second order etching rate, surface roughness and accuracy equations were developed using the Response Surface Method (RSM). The etching variables included etching temperature, etching duration, solution and solution concentration. The predictive models’ analyses were supported with the aid of the statistical software package – Design Expert (DE 7). The effects of the individual etching variables and interaction between these variables were also investigated. The study showed that predictive models successfully predicted the etching rate, surface roughness and accuracy readings recorded experimentally with 95% confident interval. The results obtained from the predictive models were also compared with Multilayer Perceptron Artificial Neural Network (ANN). Chemical Etching variables predictive by ANN were in good agreement with those with those obtained by RSM. This observation indicated the potential of ANN in predicting chemical etching variables thus eliminating the need for exhaustive chemical etching in optimization.展开更多
A study has been made on diffusion bonding of SiCp/2024Al composites by means of pure Al interlayer. In the condition of TB=843 K, PB=16 MPa, tB=60 min, the diffusion bonded joint, with a shear strength of 235 MPa, wa...A study has been made on diffusion bonding of SiCp/2024Al composites by means of pure Al interlayer. In the condition of TB=843 K, PB=16 MPa, tB=60 min, the diffusion bonded joint, with a shear strength of 235 MPa, was obtained when a 15μm thick interlayer was used. The results of the shear testing and SEM indicate that fracture of the joint presented characteristics of ductile rupture.展开更多
Macroporous silicon nitride (Si3N4) ceramics with high strength, uniform structure and relatively high porosity wereobtained by gelcasting and carbonthermal reaction in a two-step sintering technique. Microstructure a...Macroporous silicon nitride (Si3N4) ceramics with high strength, uniform structure and relatively high porosity wereobtained by gelcasting and carbonthermal reaction in a two-step sintering technique. Microstructure and compositionwere investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction(XRD). Open porosity, pore size distribution and basic mechanical performance were measured by Archimedes method,mercury intrusion porosimetry and three-point bending methods, respectively. SEM and TEM results revealed thatpores were formed by elongated β-Si3N4. SADP measurement proved the formation of SiC particles. The SiCgranules were beneficial for the formation of high ratio elongated β-Si3N4, and at proper amount, they also acted asreinforcement phase. Thermodynamic analysis indicated that the mechanisms of the reactions were mainly associatedwith liquid-solid reaction and gas-liquid reaction.展开更多
A supercell of a nanotube heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) is established, in which 96 C atoms and 32 Si atoms are included. The geometry optimiza...A supercell of a nanotube heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) is established, in which 96 C atoms and 32 Si atoms are included. The geometry optimization and the electronic property of the heterojunction are implemented through the first-principles calculation based on the density functional theory (DFT). The results indicate that the structural rearrangement takes place mainly on the interface and the energy gap of the heterojunction is 0.31 eV, which is narrower than those of the isolated CNT and the isolated SiCNT. By using the average bond energy method, the valence band offset and the conduction band offset are obtained as 0.71 and -0.03 eV, respectively.展开更多
SiC whiskers were synthesized by carbothermal reduction of silicon nitride. α-Si3N4 and β-Si3N4 powders were used as silicon sources, and graphite, active carbon and black carbon as carbon sources, as well as boron ...SiC whiskers were synthesized by carbothermal reduction of silicon nitride. α-Si3N4 and β-Si3N4 powders were used as silicon sources, and graphite, active carbon and black carbon as carbon sources, as well as boron oxide as catalyst. The synthesized SiC whiskers were characterized by XRD and SEM. The results showed that the synthesizing temperature should be above 1 716 K; the decomposition of Si3N4 was the limited step in the synthesis of SiC whiskers; and catalyst not only offered the liquid condition, but also restricted the growth of SiC whiskers along one dimension. LS mechanism seems to explain well the growth of SiC whiskers.展开更多
Silicon carbide nanofibers grew on the surface of carbon fibers of a unidirectional carbon preform by CCVD and then chemical vapor infiltration was used to densify the preform to get the SiCNF-C/C composite. The effec...Silicon carbide nanofibers grew on the surface of carbon fibers of a unidirectional carbon preform by CCVD and then chemical vapor infiltration was used to densify the preform to get the SiCNF-C/C composite. The effects of silicon carbide nanofibers on the microstructure of the pyrolytic carbon and the thermal conductivity of the SiCNF-C/C composite were investigated. Results show that silicon carbide nanofibers on the surface of carbon fibers induce the deposition of high texture pyrolytic carbon around them. The interface bonding between carbon fibers and pyrolytic carbon is well adjusted. So the efficiency of heat transfer in the interface of the composite is well enhanced. The thermal conductivity of the SiCNF-C/C composite is greater than that of the C/C composite, especially the thermal conductivity perpendicular to the fiber axis.展开更多
Silicon is the material most commonly used in the manufacturing of photovoltaic (PV) cells. In the current study, laboratory experiments of purification of solar cell silicon materials through filtration are carried o...Silicon is the material most commonly used in the manufacturing of photovoltaic (PV) cells. In the current study, laboratory experiments of purification of solar cell silicon materials through filtration are carried out. Inclusion removal from silicon was investigated. The purpose is to achieve clean silicon materials for solar cells. Silicon samples and filter samples were analyzed using microscope observation, EPMA, and X-ray detection. Silicon nitride (Si3N4) and silicon carbide (SiC) particles are the main non-metallic inclusions present in top-cut silicon scrap. Almost all inclusions larger than 10 μm can be removed from silicon by the porous foam filter. In mass fraction, more than 90% inclusions are removed. Si3N4 particles are mainly removed on the top surface of the filter, and SiC particles are mainly removed by entering the pores and attaching to the filter material. SiC inclusions are not only simply attached on the surface of the filter material, but are found also inside the filter material. There are SiC bridges near the filter materials. These bridges may fill the spaces between filter material, and this will further retard inclusions passing through the filter. Three-dimensional turbulent fluid flow and inclusion motion in the filter was calculated. Both experimental observation and fluid flow simulation indicate that most of the inclusions are entrapped at the upper part of the filter.展开更多
High temperature oxidation behavior of two kinds of nitride bonded SiC based refractories was investigated at 1 100 1 500 ℃ by means of X-ray diffractometer, scanning electronic microscopy and thermogravimetry. The r...High temperature oxidation behavior of two kinds of nitride bonded SiC based refractories was investigated at 1 100 1 500 ℃ by means of X-ray diffractometer, scanning electronic microscopy and thermogravimetry. The results show that: ( 1) with the temperature increasing,the oxidation mass increment rate of the specimen increases first and then decreases,and oxidation passivation occurs; ( 2) the oxidation resistance of SiAlON bonded SiC refractories is superior to that of Si3N4 bonded SiC refractories; ( 3) high temperature oxidation results in the increase of compressive strength at room temperature of SiC based refractories compared with specimen before oxidation; the compressive strength of SiAlON bonded SiC specimens oxidized at high temperatures decreases with the increase of the temperature as a result of formation and burst of surface bubble,while the decrease of compressive strength of Si3N4 bonded SiC specimens oxidized at high temperatures is owing to the increase of the consistency of net-like crack associated with cristobalite transformation during cooling.展开更多
The steam oxidation of Si3N4-bonded SiC was determined at 1000℃for 50,100,150,200,250 and 300 h,respectively,according to ASTM C863-2000.The evolution of the phase composition and the microstructure as well as their ...The steam oxidation of Si3N4-bonded SiC was determined at 1000℃for 50,100,150,200,250 and 300 h,respectively,according to ASTM C863-2000.The evolution of the phase composition and the microstructure as well as their relationship was investigated by XRD and SEM.The results show that the oxidation rate of Si3N4-bonded SiC is periodic.The presence of nitrogen element can impede the crystallization of SiO2 glass;the local enrichment of CaO impurities is unfavorable for the existence of fibrous SiO2.SiO2 mainly exists as cristobalite when the CaO/SiO2 ratio reaches a suitable level,but gradually transforms to quartz along with the oxidation time when the SiO2 content increases,or the CaO/SiO2 ratio decreases,due to the insufficient mineralization of CaO.The crystallization of SiO2 glass,especially the formation of quartz is the key factor leading to the volume expansion and structural stress.When the cracks extend and reach the surface,the degradation of the material accelerates.展开更多
By the method of TG-DSC ( thermo gravimetric analysis -differential scanning calorimeter), the chemical reactions of Fe -Si3 N4 bonded SiC during the sintering process in nitriding furnace have been studied. Analyses ...By the method of TG-DSC ( thermo gravimetric analysis -differential scanning calorimeter), the chemical reactions of Fe -Si3 N4 bonded SiC during the sintering process in nitriding furnace have been studied. Analyses have been conducted on the reason of disintegration of specimens when ferro-silicon was added greater than 15% and on the method to reduce damage. The result indicated that there are mainly three important reactions occurred during the nitriding process of samples, they are: the oxidation of carbon, the melting of ferro-silicon and the nitriding of ferro -silicon. Controlling the balance of partial pressure of N2 and slowing down the rate of temperature rising can reduce the disintegration of samples.展开更多
Petroleum coke,graphite,gas carbon and lower sulfur carbon black were used to prepare reaction-bonded silicon carbide.The influences of different carbon containing materials on properties of carbonaceous precursors,si...Petroleum coke,graphite,gas carbon and lower sulfur carbon black were used to prepare reaction-bonded silicon carbide.The influences of different carbon containing materials on properties of carbonaceous precursors,sintering process,and microstructure of the prepared SiC were researched.The results show that:(1)With the density of carbon containing materials increasing,the porosity of carbonaceous precursors decreases and the infiltrating process of liquid silicon is more difficult.(2)The reaction between carbon containing materials and liquid silicon,the volume effect is more obvious with the density of carbon containing materials increasing.(3)As the carbon containing materials density decreasing,residual carbon in reaction bonded SiC also decreases.展开更多
文摘Multi-phase nitrides bonded silicon carbide lintel blocks were prepared using industrial SiC(SiC≥98 mass%,3-0.5,≤0.5 and≤0.044 mm),Si powder(Si≥98 mass%,≤0.044 mm),and SiO2 micropowder(SiO2≥96 mass%,d50=0.15 pm)as raw materials,and calcium lignosulfonate as the additive,batching,mixing,and molding on a vibration pressure molding machine,drying and then firing at 1420℃for 10 h in high-purity N2.The apparent porosity,the bulk density,the cold modulus of rupture,the hot modulus of rupture,and the linear expansion coefficient of the samples were tested.The phase composition and the microstructure of the samples at different nitriding depths(50,100,and 150 mm)were analyzed by XRD and SEM.The field application effects of the blocks were studied.The results show that:(1)the multi-phase nitrides bonded silicon carbide refractories can dynamically adjust their own phase composition and minimize structural and thermal stresses,improving the service life of key parts of dry quenching furnaces;(2)calcium lignosulfonate can improve the nitriding micro-environment of multi-phase nitrides bonded silicon carbide lintel blocks,successfully increasing the effective nitriding thickness of the blocks to 300 mm;(3)Sinosteel LI RR provides a unique concept in the design of materials and block types as well as the stable and scientific overall structure,promoting the industrialization process of dry quenching furnaces with long service life in China.
文摘Steam oxidation resistance of Si3N4 and Si2N2O as well as SiAlON bonded SiC refractories at 900℃was tested according to ASTM-C863.Phase composition and microstructure before and after oxidation were analyzed by XRD and SEM.The results show that Si3N4 and Si2N2O bonded SiC refractory presents better steam oxidation resistance than SiAlON bonded SiC.For Si3N4 and Si2N2O bonded SiC,the oxidation speed is higher with more pronounced volume expansion in the early 100 h;afterwards,the volume expansion slows down gradually and starts to level off after 300 h.It is considered that the high silica glass phase formed during the oxidation covers Si3N4 and Si2N2O,and SiC as a protective layer and fills the open pores.But for SiAlON bonded SiC,the volume expands gradually and constantly with the increasing oxidation duration even after 500 h,due to the continuous formation of mullite transformed from oxidation products and Al2O3 in SiAlON.
文摘Effect of SiO 2 content and sintering process on the composition and properties of Pure Carbon Reaction Bonded Silicon Carbide (PCRBSC) ceramics prepared with C-SiO 2 green body by infiltrating silicon was presented.The infiltrating mechanism of C-SiO 2 preform was also explored.The experimental results indicate that the shaping pressure increases with the addition of SiO 2 to the preform,and the pore size of the body turned finer and distributed in a narrower range,which is beneficial to decreasing the residual silicon content in the sintered materials and to avoiding shock off,thus increasing the conversion rate of SiC.SiO 2 was deoxidized by carbon at a high temperature and the gaseous SiO and CO produced are the main reason to the crack of the body at an elevated temperature.If the green body is deposited at 1800℃ in vacuum before infiltration crack will not be produced in the preform and fully dense RBSC can be obtained.The ultimate material has the following properties:a density of 3.05-3.12g/cm3,a strength of 580±32MPa and a hardness of (HRA)91-92.3.
文摘Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reaction-bonded is one of important sintering technology of ceramics structural parts. The preparation of reaction-bonded silicon carbide (RBSC) is based on a reaction sintering process, whereby a compacted body of α-SiC and carbon (graphite) powders is heated in contact with liquid silicon or gas silicon, which impregnates the body, converting the carbon (graphite) to β-SiC which bonds the original alpha grain. This process is characterized by low temperature and a short time sintering, and being appropriate to the preparation of large size and complex-shaped components, and so on. Besides, during compacting process of reaction sintering, it can maintain a stable dimension of ceramics parts. Therefore, the method of reaction-bonded silicon carbide ceramics has been identified as a technology suitable for producing complicated and highly exact dimensions’ ceramics parts. In this paper, the method of reaction-bonded silicon carbide was applied to the manufacturing of a complex-shaped spacecraft combustion chamber of SiC ceramics. SiC and carbon powder of 4～30 μm were chosen as the raw materials, green compacts containing appropriate wt.% carbon were formed using the mold press method, sintering was performed in a graphite electric furnace under an argon atmosphere. It was introduced in detail that the technological parameters and technological flow of reaction sintering silicon carbide ceramics. At the same time, physical and mechanical experiments such as bending strength, coefficient of thermal expansion, coefficient of thermal conductivity, gastight property, heat resisting property etc. have been carried out. The results demonstrated that spacecraft combustion chamber made from reaction sintering of silicon carbide ceramics is feasible and the results of experiment is satisfactory. The strength of high-temperature structural parts made by reaction sintered SiC varied with silicon content; Under the this article testing condition, the optimum silicon content is 10.5% for the part investigated. The method of reaction sintered SiC ceramics is suitable for manufacturing of complicated spacecraft parts with a working temperature of 1 500 ℃.
文摘Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C 1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).
文摘The present paper discusses the development of the first and second order model for predicting the chemical etching variables, namely, etching rate, surface roughness and accuracy of advanced ceramics. The first and second order etching rate, surface roughness and accuracy equations were developed using the Response Surface Method (RSM). The etching variables included etching temperature, etching duration, solution and solution concentration. The predictive models’ analyses were supported with the aid of the statistical software package – Design Expert (DE 7). The effects of the individual etching variables and interaction between these variables were also investigated. The study showed that predictive models successfully predicted the etching rate, surface roughness and accuracy readings recorded experimentally with 95% confident interval. The results obtained from the predictive models were also compared with Multilayer Perceptron Artificial Neural Network (ANN). Chemical Etching variables predictive by ANN were in good agreement with those with those obtained by RSM. This observation indicated the potential of ANN in predicting chemical etching variables thus eliminating the need for exhaustive chemical etching in optimization.
基金the National Advanced Technology "863" Project of China with !No.715-005-0800
文摘A study has been made on diffusion bonding of SiCp/2024Al composites by means of pure Al interlayer. In the condition of TB=843 K, PB=16 MPa, tB=60 min, the diffusion bonded joint, with a shear strength of 235 MPa, was obtained when a 15μm thick interlayer was used. The results of the shear testing and SEM indicate that fracture of the joint presented characteristics of ductile rupture.
文摘Macroporous silicon nitride (Si3N4) ceramics with high strength, uniform structure and relatively high porosity wereobtained by gelcasting and carbonthermal reaction in a two-step sintering technique. Microstructure and compositionwere investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction(XRD). Open porosity, pore size distribution and basic mechanical performance were measured by Archimedes method,mercury intrusion porosimetry and three-point bending methods, respectively. SEM and TEM results revealed thatpores were formed by elongated β-Si3N4. SADP measurement proved the formation of SiC particles. The SiCgranules were beneficial for the formation of high ratio elongated β-Si3N4, and at proper amount, they also acted asreinforcement phase. Thermodynamic analysis indicated that the mechanisms of the reactions were mainly associatedwith liquid-solid reaction and gas-liquid reaction.
基金supported by the National Defense Pre-research Foundation of China (Grant No 9140A08060407DZ0103)
文摘A supercell of a nanotube heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) is established, in which 96 C atoms and 32 Si atoms are included. The geometry optimization and the electronic property of the heterojunction are implemented through the first-principles calculation based on the density functional theory (DFT). The results indicate that the structural rearrangement takes place mainly on the interface and the energy gap of the heterojunction is 0.31 eV, which is narrower than those of the isolated CNT and the isolated SiCNT. By using the average bond energy method, the valence band offset and the conduction band offset are obtained as 0.71 and -0.03 eV, respectively.
文摘SiC whiskers were synthesized by carbothermal reduction of silicon nitride. α-Si3N4 and β-Si3N4 powders were used as silicon sources, and graphite, active carbon and black carbon as carbon sources, as well as boron oxide as catalyst. The synthesized SiC whiskers were characterized by XRD and SEM. The results showed that the synthesizing temperature should be above 1 716 K; the decomposition of Si3N4 was the limited step in the synthesis of SiC whiskers; and catalyst not only offered the liquid condition, but also restricted the growth of SiC whiskers along one dimension. LS mechanism seems to explain well the growth of SiC whiskers.
文摘Silicon carbide nanofibers grew on the surface of carbon fibers of a unidirectional carbon preform by CCVD and then chemical vapor infiltration was used to densify the preform to get the SiCNF-C/C composite. The effects of silicon carbide nanofibers on the microstructure of the pyrolytic carbon and the thermal conductivity of the SiCNF-C/C composite were investigated. Results show that silicon carbide nanofibers on the surface of carbon fibers induce the deposition of high texture pyrolytic carbon around them. The interface bonding between carbon fibers and pyrolytic carbon is well adjusted. So the efficiency of heat transfer in the interface of the composite is well enhanced. The thermal conductivity of the SiCNF-C/C composite is greater than that of the C/C composite, especially the thermal conductivity perpendicular to the fiber axis.
文摘Silicon is the material most commonly used in the manufacturing of photovoltaic (PV) cells. In the current study, laboratory experiments of purification of solar cell silicon materials through filtration are carried out. Inclusion removal from silicon was investigated. The purpose is to achieve clean silicon materials for solar cells. Silicon samples and filter samples were analyzed using microscope observation, EPMA, and X-ray detection. Silicon nitride (Si3N4) and silicon carbide (SiC) particles are the main non-metallic inclusions present in top-cut silicon scrap. Almost all inclusions larger than 10 μm can be removed from silicon by the porous foam filter. In mass fraction, more than 90% inclusions are removed. Si3N4 particles are mainly removed on the top surface of the filter, and SiC particles are mainly removed by entering the pores and attaching to the filter material. SiC inclusions are not only simply attached on the surface of the filter material, but are found also inside the filter material. There are SiC bridges near the filter materials. These bridges may fill the spaces between filter material, and this will further retard inclusions passing through the filter. Three-dimensional turbulent fluid flow and inclusion motion in the filter was calculated. Both experimental observation and fluid flow simulation indicate that most of the inclusions are entrapped at the upper part of the filter.
文摘High temperature oxidation behavior of two kinds of nitride bonded SiC based refractories was investigated at 1 100 1 500 ℃ by means of X-ray diffractometer, scanning electronic microscopy and thermogravimetry. The results show that: ( 1) with the temperature increasing,the oxidation mass increment rate of the specimen increases first and then decreases,and oxidation passivation occurs; ( 2) the oxidation resistance of SiAlON bonded SiC refractories is superior to that of Si3N4 bonded SiC refractories; ( 3) high temperature oxidation results in the increase of compressive strength at room temperature of SiC based refractories compared with specimen before oxidation; the compressive strength of SiAlON bonded SiC specimens oxidized at high temperatures decreases with the increase of the temperature as a result of formation and burst of surface bubble,while the decrease of compressive strength of Si3N4 bonded SiC specimens oxidized at high temperatures is owing to the increase of the consistency of net-like crack associated with cristobalite transformation during cooling.
基金The project is supported by Municipal Science&Technology Program(No.1901001A),Luoyang,China.
文摘The steam oxidation of Si3N4-bonded SiC was determined at 1000℃for 50,100,150,200,250 and 300 h,respectively,according to ASTM C863-2000.The evolution of the phase composition and the microstructure as well as their relationship was investigated by XRD and SEM.The results show that the oxidation rate of Si3N4-bonded SiC is periodic.The presence of nitrogen element can impede the crystallization of SiO2 glass;the local enrichment of CaO impurities is unfavorable for the existence of fibrous SiO2.SiO2 mainly exists as cristobalite when the CaO/SiO2 ratio reaches a suitable level,but gradually transforms to quartz along with the oxidation time when the SiO2 content increases,or the CaO/SiO2 ratio decreases,due to the insufficient mineralization of CaO.The crystallization of SiO2 glass,especially the formation of quartz is the key factor leading to the volume expansion and structural stress.When the cracks extend and reach the surface,the degradation of the material accelerates.
文摘By the method of TG-DSC ( thermo gravimetric analysis -differential scanning calorimeter), the chemical reactions of Fe -Si3 N4 bonded SiC during the sintering process in nitriding furnace have been studied. Analyses have been conducted on the reason of disintegration of specimens when ferro-silicon was added greater than 15% and on the method to reduce damage. The result indicated that there are mainly three important reactions occurred during the nitriding process of samples, they are: the oxidation of carbon, the melting of ferro-silicon and the nitriding of ferro -silicon. Controlling the balance of partial pressure of N2 and slowing down the rate of temperature rising can reduce the disintegration of samples.
文摘Petroleum coke,graphite,gas carbon and lower sulfur carbon black were used to prepare reaction-bonded silicon carbide.The influences of different carbon containing materials on properties of carbonaceous precursors,sintering process,and microstructure of the prepared SiC were researched.The results show that:(1)With the density of carbon containing materials increasing,the porosity of carbonaceous precursors decreases and the infiltrating process of liquid silicon is more difficult.(2)The reaction between carbon containing materials and liquid silicon,the volume effect is more obvious with the density of carbon containing materials increasing.(3)As the carbon containing materials density decreasing,residual carbon in reaction bonded SiC also decreases.
