The base-collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts.This paper proposes a novel analytical de...The base-collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts.This paper proposes a novel analytical depletion capacitance model of this structure for the first time.A large discrepancy is predicted when the present model is compared with the conventional depletion model,and it is shown that the capacitance decreases with the increase of the reverse collector-base bias-and shows a kink as the reverse collector-base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations,which is consistent with measurement results.The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices.展开更多
Silicon on insulator with highly uniform top Si is fabricated by co-implantation of H+and He+ions. Compared with the conventional ion-slicing process with H implantation only, the co-implanted specimens whose He depth...Silicon on insulator with highly uniform top Si is fabricated by co-implantation of H+and He+ions. Compared with the conventional ion-slicing process with H implantation only, the co-implanted specimens whose He depth is deeper than H profile have the top Si layer with better uniformity after splitting. In addition, the splitting occurs at the position that the maximum concentration peak of H overlaps with the secondary concentration peak of He after annealing. It is suggested that the H/He co-implantation technology is a promising approach for fabricating fully depleted silicon on insulator.展开更多
The improved performance of a wavelength-tunable arrayed waveguide grating (AWG) is demonstrated, including the crosstalk, insertion loss and the wavelength tuning efficiency. A reduced impact of the fabrication proce...The improved performance of a wavelength-tunable arrayed waveguide grating (AWG) is demonstrated, including the crosstalk, insertion loss and the wavelength tuning efficiency. A reduced impact of the fabrication process on the AWG is achieved by the design of bi-level tapers. The wavelength tuning of the AWG is achieved according to the thermo-optic effect of silicon, and uniform heating of the silicon waveguide layer is achieved by optimizing the heater design. The fabricated AWG shows a minimum crosstalk of 16 dB, a maximum insertion loss of 3.91 dB and a wavelength tuning efficiency of 8.92 nm/W, exhibiting a ～8 dB improvement of crosstalk, ～2.1 dB improvement of insertion loss and ～5 nm/W improvement of wavelength tuning efficiency, compared to our previous reported results.展开更多
A new analytical model of high voltage silicon on insulator(SOI) thin film devices is proposed,and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisso...A new analytical model of high voltage silicon on insulator(SOI) thin film devices is proposed,and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate,with a threshold energy taken into account for electron multiplying.Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness,the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films,and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm.From the proposed formula of silicon critical electric field,the expressions of dielectric layer electric field and vertical breakdown voltage(VB,V) are obtained.Based on the model,an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field,and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5 μm,respectively.In addition,a relation between dielectric layer thickness and silicon film thickness is obtained,indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed.2D simulated results and some experimental results are in good agreement with analytical results.展开更多
A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI.At a low k va...A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI.At a low k value the electric field strength in the dielectric buried layer (E I) is enhanced and a Si window makes the substrate share the vertical drop,resulting in a high vertical breakdown voltage;in the lateral direction,a high electric field peak is introduced at the Si window,which modulates the electric field distribution in the SOI layer;consequently,a high breakdown voltage (BV) is obtained.The values of EI and BV of LK PSOI with kI=2 on a 2 μm thick SOI layer over 1 μm thick buried layer are enhanced by 74% and 19%,respectively,compared with those of the conventional PSOI.Furthermore,the Si window also alleviates the self-heating effect.展开更多
This paper reports that a two-dimensional single-defect photonic crystal waveguide in the Γ -K direction with triangular lattice on a silicon-on-insulator substrate is fabricated by the combination of electron beam l...This paper reports that a two-dimensional single-defect photonic crystal waveguide in the Γ -K direction with triangular lattice on a silicon-on-insulator substrate is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. A ministop band (MSB) is observed by the measurement of transmission characteristics. It results from the coupling between the two modes with the same symmetry, which is analysed from the stimulated band diagram by the effective index and the two-dimensional plane wave expansion methods. The parameter working on the MSB is the ratio of the radius of air holes to the lattice constant, r/a. It is obtained that the critical r/a value determining the occurrence or disappearance of MSB is 0.36. When r/a is larger than or equal to 0.36, the MSB occurs. However, when r/a is smaller than 0.36, the MSB disappears.展开更多
Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) ...Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator(SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field(ENDIF),from which the reduced surface field(RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection(HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET(nLDMOS) with MSFP is realized.The experimental breakdown voltage(BV) and specific on-resistance(R on,sp) of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.展开更多
Disorder effects on topological materials in integer dimensions have been extensively explored in recent years. However, its influence on topological systems in fractional dimensions remains unclear. Here, we investig...Disorder effects on topological materials in integer dimensions have been extensively explored in recent years. However, its influence on topological systems in fractional dimensions remains unclear. Here, we investigate the disorder effects on a fractal system constructed on the Sierpiński lattice in fractional dimensions. The system supports the second-order topological insulator phase characterized by a quantized quadrupole moment and the normal insulator phase. We find that the second-order topological insulator phase on the Sierpiński lattice is robust against weak disorder but suppressed by strong disorder. Most interestingly, we find that disorder can transform the normal insulator phase to the second-order topological insulator phase with an emergent quantized quadrupole moment. Finally, the disorder-induced phase is further confirmed by calculating the energy spectrum and the corresponding probability distributions.展开更多
AIM:To evaluate the efficacy and safety of silicone oil(SO)as a corneal lubricant to improve visualization during vitrectomy.METHODS:Patients who underwent vitreoretinal surgery were divided into two groups.Group 1 wa...AIM:To evaluate the efficacy and safety of silicone oil(SO)as a corneal lubricant to improve visualization during vitrectomy.METHODS:Patients who underwent vitreoretinal surgery were divided into two groups.Group 1 was operated on with initial SO(Oxane 5700)as a corneal lubricant.Group 2 was operated on with initial lactated ringer’s solution(LRS)and then replaced with SO as required.Fundus clarity was scored during the surgery.Fluorescein staining was performed to determine the damage to corneal epithelium.RESULTS:Totally 114 eyes of 114 patients were included.Single SO use maintained a clear cornea and provided excellent visualization of surgical image.In group 1,the fundus clarity was grade 3 in 41/45 eyes and grade 2 in 4/45 eyes.In group 2,corneal edema frequently occurred after initial LRS use.The fundus clarity was grade 3 in 19/69 eyes,2 in 37/69 eyes and 1 in 13/69 eyes(P<0.05).SO was applied in 29 eyes of initial LRS use with subsequent corneal edema,which eliminated the corneal edema in 26 eyes.Corneal fluorescein staining score in group 1 was 0 in 28 eyes,1 in 11 eyes and 2 in 6 eyes,and 40,20 and 9,respectively,in group 2(all P>0.05).CONCLUSION:The use of SO as a corneal lubricant is effective and safe for preserving and improving corneal clarity and providing clear surgical field during vitrectomy.展开更多
AIM:To evaluate scleral buckling(SB)surgery using a noncontact wide-field viewing system and 23-gauge intraocular illumination for the treatment of rhegmatogenous retinal detachment in silicone oil(SO)-filled eyes.MET...AIM:To evaluate scleral buckling(SB)surgery using a noncontact wide-field viewing system and 23-gauge intraocular illumination for the treatment of rhegmatogenous retinal detachment in silicone oil(SO)-filled eyes.METHODS:Totally 9 patients(9 eyes)with retinal detachment in SO-filled eyes were retrospectively analyzed.All patients underwent non-contact wide-field viewing system-assisted buckling surgery with 23-gauge intraocular illumination.SO was removed at an appropriate time based on recovery.The patients were followed up for at least 3mo after SO removal.Retinal reattachment,complications,visual acuity and intraocular pressure(IOP)before and after surgery were observed.RESULTS:Patients were followed up for a mean of 8.22mo(3-22mo)after SO removal.All patients had retinal reattachment.At the final follow-up,visual acuity showed improvement for 8 patients,and no change for 1 patient.The IOP was high in 3 patients before surgery,but it stabilized after treatment;it was not affected in the other patients.None of the patients had infections,hemorrhage,anterior ischemia,or any other complication.CONCLUSION:This new non-contact wide-field viewing system-assisted SB surgery with 23-gauge intraocular illumination is effective and safe for retinal detachment in SO-filled eyes.展开更多
Fragrant rice has a high market value,and it is a popular rice type among consumers owing to its pleasant flavor.Plantation methods,nitrogen(N)fertilizers,and silicon(Si)fertilizers can affect the grain yield and frag...Fragrant rice has a high market value,and it is a popular rice type among consumers owing to its pleasant flavor.Plantation methods,nitrogen(N)fertilizers,and silicon(Si)fertilizers can affect the grain yield and fragrance of fragrant rice.However,the core commercial rice production attributes,namely the head rice yield(HRY)and 2-acetyl-1-pyrroline(2-AP)content of fragrant rice,under various nitrogen and silicon(N-Si)fertilization levels and different plantation methods remain unknown.The field experiment in this study was performed in the early seasons of 2018 and 2019 with two popular indica fragrant rice cultivars(Yuxiangyouzhan and Xiangyaxiangzhan).They were grown under six N-Si fertilization treatments(combinations of two levels of Si fertilizer,0 kg Si ha^(−1)(Si0)and 150 kg Si ha^(−1)(Si1),and three levels of N fertilizer,0 kg N ha^(−1)(N0),150 kg N ha^(−1)(N1),and 220 kg N ha^(−1)(N2))and three plantation methods(artificial transplanting(AT),mechanical transplanting(MT),and mechanical direct-seeding(MD)).The results showed that the N-Si fertilization treatments and all the plantation methods significantly affected the HRY and 2-AP content and related parameters of the two different fragrant rice cultivars.Compared with the Si0N0 treatment,the N-Si fertilization treatments resulted in higher HRY and 2-AP contents.The rates of brown rice,milled rice,head rice,and chalky rice of the fragrant rice also improved with the N-Si fertilization treatments.The N-Si fertilization treatments increased the activities of N metabolism enzymes and the accumulation of N and Si in various parts of the fragrant rice,and affected their antioxidant response parameters.The key parameters for the HRY and 2-AP content were assessed by redundancy analysis.Furthermore,the structural equation model revealed that the Si and N accumulation levels indirectly affected the HRY by affecting the N metabolism enzyme activity,N use efficiency,and grain quality of fragrant rice.Moreover,high N and Si accumulation directly promoted the 2-AP content or affected the antioxidant response parameters and indirectly regulated 2-AP synthesis.The interactions of the MT method with the N-Si fertilization treatments varied in the fragrant rice cultivars in terms of the HRY and 2-AP content,whereas the MD method was beneficial to the 2-AP content in both fragrant rice cultivars under the N-Si fertilization treatments.展开更多
Aluminum (Al) toxicity is a considerable factor limiting crop yield and biomass in acidic soil. Tartary buckwheatgrowing in acidic soil may suffer from Al poisoning. Here, we investigated the influence of Al stress on...Aluminum (Al) toxicity is a considerable factor limiting crop yield and biomass in acidic soil. Tartary buckwheatgrowing in acidic soil may suffer from Al poisoning. Here, we investigated the influence of Al stress on the growthof tartary buckwheat seedling roots, and the alleviation of Al stress by silicon (Si), as has been demonstrated inmany crops. Under Al stress, root growth (total root length, primary root length, root tips, root surface area, androot volume) was significantly inhibited, and Al and malondialdehyde (MDA) accumulated in the root tips. At thesame time, catalase (CAT) and ascorbate peroxidase activities, polyphenols, flavonoids, and 1,1-diphenyl-2-picrylhydrazyl(DPPH) and 2,2′-azinobis-(3-ethylbenzthiazoline-6-sulphonate) (ABTS) free-radical scavenging abilitywere significantly decreased. After the application of Si, root growth, Al accumulation, and oxidative damage wereimproved. Compared to Al-treated seedlings, the contents of ·O2− and MDA decreased by 29.39% and 25.22%,respectively. This was associated with Si-induced increases in peroxidase and CAT enzyme activity, flavonoidcompounds, and free-radical scavenging (DPPH and ABTS). The application of Si therefore has positive effectson Al toxicity in tartary buckwheat roots by reducing Al accumulation in the roots and maintaining oxidationhomeostasis.展开更多
Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal–insulator transition. We investigate the Mott transiti...Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal–insulator transition. We investigate the Mott transition in a Hubbard model by using the dynamical mean-field theory and introduce the local quantum state fidelity to depict the Mott metal–insulator transition. The local quantum state fidelity provides a convenient approach to determining the critical point of the Mott transition. Additionally, it presents a consistent description of the two distinct forms of the Mott transition points.展开更多
[Objectives]This study was conducted to investigate the scientific application of silicon fertilizer in rice cultivation,one of the staple crops.[Methods]In 2022,Yandu District carried out a special experiment and fie...[Objectives]This study was conducted to investigate the scientific application of silicon fertilizer in rice cultivation,one of the staple crops.[Methods]In 2022,Yandu District carried out a special experiment and field demonstration study on the effects of foliar application of Zhengda water-soluble silicon fertilizer on rice production.[Results]The preliminary results showed that①Zhengda water-soluble silicon fertilizer could effectively improve the growth and development of rice and improve the population quality.The peak number of tillers,productive tiller percentage,number of effective panicles and number of effective grains per panicle increased by 6.7%,5.8%,5.5%,and 1.2%,respectively.②The yield and processing quality were improved.After applying silicon fertilizer,the yield per unit area increased by about 6.8%,and the unpolished rice yield,milled rice yield and head rice yield increased by 0.7%,1.94%and 2.15%respectively.[Conclusions]The demonstration application of silicon fertilizer in field cultivation of rice in Yandu District further proves previous research conclusions and has important practical significance.展开更多
BACKGROUND Endophthalmitis occurring in silicone oil-filled eyes is a very rare occurrence,with reported incidence rates ranging between 0.07%and 0.039%.Traditional methods of management of infectious endophthalmitis ...BACKGROUND Endophthalmitis occurring in silicone oil-filled eyes is a very rare occurrence,with reported incidence rates ranging between 0.07%and 0.039%.Traditional methods of management of infectious endophthalmitis include the removal of silicone oil,washout of the vitreous cavity,administration of intravitreal antibiotics,and reinjection of silicone oil.CASE SUMMARY Herein,we report the case of a 39-year-old man with unilateral endophthalmitis after pars plana vitrectomy and silicone oil tamponade.Intravitreal injections of full-dose antibiotics and anterior chamber washout were used to treat the patient.No signs of retinal toxicity were observed during the follow-up period.CONCLUSION Intravitreal full-dose antibiotic injections and anterior chamber washout are promising alternatives to traditional therapies for endophthalmitis in silicone oilfilled eyes.展开更多
An experimental investigation into the thermal conductivity of CF-SiC two-phase composite asphalt concrete is presented.The main objective of this study was to verify the possibility of using SiC powder instead of min...An experimental investigation into the thermal conductivity of CF-SiC two-phase composite asphalt concrete is presented.The main objective of this study was to verify the possibility of using SiC powder instead of mineral powder as the thermal conductive filler to prepare a new type of asphalt concrete and improve the efficiency of electrothermal snow and ice melting systems accordingly.The thermal conductivity of asphalt concrete prepared with different thermally conductive fillers was tested by a transient plane source method,and the related performances were measured.Then the temperature rise rate and surface temperature were studied through field heating tests.Finally,the actual ice melting efficiency of the thermally conductive asphalt concrete was evaluated using an effective electrothermal system.As shown by the experimental results,the composite made of SiC powder and carbon fiber has a high thermal conductivity.When SiC replaces mineral powder,the thermal conductivity of the asphalt mixture increases first and then decreases with the increase of carbon fiber content.In the present study,in particular,the thermal conductivity attained a peak when the carbon fiber content was 0.2%of the aggregate mass.展开更多
The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the pa...The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the past two decades, the conversion efficiency of these cells has remained relatively high. While solar cells have a great potential as a device of renewable energy, the high cost they incur per Watt continues to be a significant barrier to their widespread implementation. As a consequence, it is vital to conduct research into alternate materials that may be used in the construction of solar cells. The heterojunction solar cell (HJSC), which is based on n-type zinc oxide (n-ZnO) and p-type silicon (p-Si), is one of the numerous alternatives of the typical Si single homojunction solar cell. There are many deficiencies that can be found in the published research on n-ZnO/p-Si heterojunction solar cell. Inconsistencies in the stated value of open circuit voltage (V<sub>oc</sub>) of the solar cell are one example of deficiency. The absence of a full theoretical study to evaluate the potential of the solar cell structure is another deficiency that can be found in these researches. A lower value of experimentally obtained V<sub>OC</sub> in comparison to the theoretical prediction based on the band-gap between n-ZnO and p-Si. There needs to be more consensus among scientists regarding the optimal conditions for the growth of zinc oxide. Many software’s are available for simulating and optimizing the solar cells based on these parameters. For this purpose, in this dissertation, I provide computational results relevant to n-ZnO/p-Si HJSC to overcome deficiencies that have been identified. While modeling and simulating the potential of the solar cell structure with AFORS-HET, it is essential to consider the constraints that exist in the real world. AFORS-HET was explicitly designed to mimic the multilayer solar cell arrangement. In AFORS-HET, we can add up to seven layers for solar cell layout. By using this software, we can figure out the open circuit voltage (V<sub>OC</sub>), the short circuit current (J<sub>SC</sub>), the quantum efficiency (QE, %), the heterojunction energy band structure, and the power conversion efficiency (PCE).展开更多
The objective of this study is to improve the mechanical properties and machining performance of high thermal conductivity and low expansion silicon carbide dispersion-strengthened hypereutectic aluminum-silicon elect...The objective of this study is to improve the mechanical properties and machining performance of high thermal conductivity and low expansion silicon carbide dispersion-strengthened hypereutectic aluminum-silicon electronic packaging materials to meet the needs of aviation,aerospace,and electronic packaging fields.We used the powder metallurgy method and high-temperature hot pressing technology to prepare SiC/Al-Si composite materials with different SiC contents(5vol%,10vol%,15vol%,and 20vol%).The results showed that as the SiC content increased,the tensile strength of the composite material first increased and then decreased.The tensile strength was the highest when the SiC content was 15%;the sintering temperature significantly affected the composite material’s structural density and mechanical properties.Findings indicated 700℃was the optimal sintering and the optimal SiC content of SiC/Al-Si composite materials was between 10%and 15%.Besides,the sintering temperature should be strictly controlled to improve the material’s structural density and mechanical properties.展开更多
The effects of particle size,gradation and solid loading of silicon nitride (Si_(3)N_(4)) on the rheological behavior and curing properties of ceramic slurry are studied by stereolithography (SLA).The results show tha...The effects of particle size,gradation and solid loading of silicon nitride (Si_(3)N_(4)) on the rheological behavior and curing properties of ceramic slurry are studied by stereolithography (SLA).The results show that the particle size of Si_(3)N_(4) powder has a signif icant influence on the rheological properties and stability of the slurry.When m_(D50=1.3μm):m_(D50=2.3μm)=3:7,the slurry viscosity is low and the sedimentation is slow.The most important thing is that with the increase of the solid loading of the slurry,the viscosity of the slurry increases,the stability becomes higher,and the curing thickness decreases.The curing thickness of Si_(3)N_(4) ceramic slurry with solid loading of 50 vol% can reach nearly 50μm.The above results finally show that the process optimizes the formulation of the slurry in rheological and curing properties.展开更多
基金Project supported by the National Ministries and Commissions(Grant Nos.51308040203,72105499,and6139801)
文摘The base-collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts.This paper proposes a novel analytical depletion capacitance model of this structure for the first time.A large discrepancy is predicted when the present model is compared with the conventional depletion model,and it is shown that the capacitance decreases with the increase of the reverse collector-base bias-and shows a kink as the reverse collector-base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations,which is consistent with measurement results.The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices.
基金Supported by the National Natural Science Foundation of China under Grant No 61674159the Program of National Science and Technology Major Project under Grant No 2016ZX02301003+2 种基金the Shanghai Academic/Technology Research Leader under Grant Nos 16XD1404200 and 17XD1424500the Key Research Project of Frontier Science of Chinese Academy of Sciences under Grant No QYZDB-SSW-JSC021the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB30030000
文摘Silicon on insulator with highly uniform top Si is fabricated by co-implantation of H+and He+ions. Compared with the conventional ion-slicing process with H implantation only, the co-implanted specimens whose He depth is deeper than H profile have the top Si layer with better uniformity after splitting. In addition, the splitting occurs at the position that the maximum concentration peak of H overlaps with the secondary concentration peak of He after annealing. It is suggested that the H/He co-implantation technology is a promising approach for fabricating fully depleted silicon on insulator.
基金Supported by the National Key R&D Program of China under Grant No 2016YFB0402504
文摘The improved performance of a wavelength-tunable arrayed waveguide grating (AWG) is demonstrated, including the crosstalk, insertion loss and the wavelength tuning efficiency. A reduced impact of the fabrication process on the AWG is achieved by the design of bi-level tapers. The wavelength tuning of the AWG is achieved according to the thermo-optic effect of silicon, and uniform heating of the silicon waveguide layer is achieved by optimizing the heater design. The fabricated AWG shows a minimum crosstalk of 16 dB, a maximum insertion loss of 3.91 dB and a wavelength tuning efficiency of 8.92 nm/W, exhibiting a ～8 dB improvement of crosstalk, ～2.1 dB improvement of insertion loss and ～5 nm/W improvement of wavelength tuning efficiency, compared to our previous reported results.
基金Project supported by the National Natural Science Foundation of China (Grant No 60436030)National Laboratory of Analogue Integrated Circuits,China (Grant No 9140C090305060C09)
文摘A new analytical model of high voltage silicon on insulator(SOI) thin film devices is proposed,and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate,with a threshold energy taken into account for electron multiplying.Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness,the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films,and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm.From the proposed formula of silicon critical electric field,the expressions of dielectric layer electric field and vertical breakdown voltage(VB,V) are obtained.Based on the model,an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field,and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5 μm,respectively.In addition,a relation between dielectric layer thickness and silicon film thickness is obtained,indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed.2D simulated results and some experimental results are in good agreement with analytical results.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060)the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904)the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721)
文摘A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI.At a low k value the electric field strength in the dielectric buried layer (E I) is enhanced and a Si window makes the substrate share the vertical drop,resulting in a high vertical breakdown voltage;in the lateral direction,a high electric field peak is introduced at the Si window,which modulates the electric field distribution in the SOI layer;consequently,a high breakdown voltage (BV) is obtained.The values of EI and BV of LK PSOI with kI=2 on a 2 μm thick SOI layer over 1 μm thick buried layer are enhanced by 74% and 19%,respectively,compared with those of the conventional PSOI.Furthermore,the Si window also alleviates the self-heating effect.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 60336010 and 60537010)
文摘This paper reports that a two-dimensional single-defect photonic crystal waveguide in the Γ -K direction with triangular lattice on a silicon-on-insulator substrate is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. A ministop band (MSB) is observed by the measurement of transmission characteristics. It results from the coupling between the two modes with the same symmetry, which is analysed from the stimulated band diagram by the effective index and the two-dimensional plane wave expansion methods. The parameter working on the MSB is the ratio of the radius of air holes to the lattice constant, r/a. It is obtained that the critical r/a value determining the occurrence or disappearance of MSB is 0.36. When r/a is larger than or equal to 0.36, the MSB occurs. However, when r/a is smaller than 0.36, the MSB disappears.
基金Project supported partially by the National Natural Science Foundation of China (Grant Nos. 60906038 and 61076082)
文摘Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator(SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field(ENDIF),from which the reduced surface field(RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection(HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET(nLDMOS) with MSFP is realized.The experimental breakdown voltage(BV) and specific on-resistance(R on,sp) of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.
基金the support of the National Natural Science Foundation of China (Grant No.12304195)the Chutian Scholars Program in Hubei Province+3 种基金supported by the National Natural Science Foundation of China (Grant No.12074107)the program of outstanding young and middle-aged scientific and technological innovation team of colleges and universities in Hubei Province (Grant No.T2020001)the innovation group project of the Natural Science Foundation of Hubei Province of China (Grant No.2022CFA012)supported by the Postdoctoral Innovation Research Program in Hubei Province (Grant No.351342)。
文摘Disorder effects on topological materials in integer dimensions have been extensively explored in recent years. However, its influence on topological systems in fractional dimensions remains unclear. Here, we investigate the disorder effects on a fractal system constructed on the Sierpiński lattice in fractional dimensions. The system supports the second-order topological insulator phase characterized by a quantized quadrupole moment and the normal insulator phase. We find that the second-order topological insulator phase on the Sierpiński lattice is robust against weak disorder but suppressed by strong disorder. Most interestingly, we find that disorder can transform the normal insulator phase to the second-order topological insulator phase with an emergent quantized quadrupole moment. Finally, the disorder-induced phase is further confirmed by calculating the energy spectrum and the corresponding probability distributions.
基金Supported by the Shanghai Key Clinical Specialty,Shanghai Eye Disease Research Center(No.2022ZZ01003)the Science and Technology Commission of Shanghai(No.20DZ2270800).
文摘AIM:To evaluate the efficacy and safety of silicone oil(SO)as a corneal lubricant to improve visualization during vitrectomy.METHODS:Patients who underwent vitreoretinal surgery were divided into two groups.Group 1 was operated on with initial SO(Oxane 5700)as a corneal lubricant.Group 2 was operated on with initial lactated ringer’s solution(LRS)and then replaced with SO as required.Fundus clarity was scored during the surgery.Fluorescein staining was performed to determine the damage to corneal epithelium.RESULTS:Totally 114 eyes of 114 patients were included.Single SO use maintained a clear cornea and provided excellent visualization of surgical image.In group 1,the fundus clarity was grade 3 in 41/45 eyes and grade 2 in 4/45 eyes.In group 2,corneal edema frequently occurred after initial LRS use.The fundus clarity was grade 3 in 19/69 eyes,2 in 37/69 eyes and 1 in 13/69 eyes(P<0.05).SO was applied in 29 eyes of initial LRS use with subsequent corneal edema,which eliminated the corneal edema in 26 eyes.Corneal fluorescein staining score in group 1 was 0 in 28 eyes,1 in 11 eyes and 2 in 6 eyes,and 40,20 and 9,respectively,in group 2(all P>0.05).CONCLUSION:The use of SO as a corneal lubricant is effective and safe for preserving and improving corneal clarity and providing clear surgical field during vitrectomy.
基金Supported by National Natural Science Foundation of China(No.81700884)Scientific Research Foundation of National Health and Health Commission(No.WKJ-ZJ-2037)+1 种基金Zhejiang Public Welfare Technology Application Project(No.LGF21H120005)Science and Technology Project of Wenzhou(No.Y20190649).
文摘AIM:To evaluate scleral buckling(SB)surgery using a noncontact wide-field viewing system and 23-gauge intraocular illumination for the treatment of rhegmatogenous retinal detachment in silicone oil(SO)-filled eyes.METHODS:Totally 9 patients(9 eyes)with retinal detachment in SO-filled eyes were retrospectively analyzed.All patients underwent non-contact wide-field viewing system-assisted buckling surgery with 23-gauge intraocular illumination.SO was removed at an appropriate time based on recovery.The patients were followed up for at least 3mo after SO removal.Retinal reattachment,complications,visual acuity and intraocular pressure(IOP)before and after surgery were observed.RESULTS:Patients were followed up for a mean of 8.22mo(3-22mo)after SO removal.All patients had retinal reattachment.At the final follow-up,visual acuity showed improvement for 8 patients,and no change for 1 patient.The IOP was high in 3 patients before surgery,but it stabilized after treatment;it was not affected in the other patients.None of the patients had infections,hemorrhage,anterior ischemia,or any other complication.CONCLUSION:This new non-contact wide-field viewing system-assisted SB surgery with 23-gauge intraocular illumination is effective and safe for retinal detachment in SO-filled eyes.
基金This project was financially supported by the National Natural Science Foundation of China(31601244 and 31971843)the Guangdong Provincial Key Field Research and Development Plan Project,China(2019B020221003)the Modern Agricultural Industrial Technology System of Guangdong Province,China(2020KJ105).
文摘Fragrant rice has a high market value,and it is a popular rice type among consumers owing to its pleasant flavor.Plantation methods,nitrogen(N)fertilizers,and silicon(Si)fertilizers can affect the grain yield and fragrance of fragrant rice.However,the core commercial rice production attributes,namely the head rice yield(HRY)and 2-acetyl-1-pyrroline(2-AP)content of fragrant rice,under various nitrogen and silicon(N-Si)fertilization levels and different plantation methods remain unknown.The field experiment in this study was performed in the early seasons of 2018 and 2019 with two popular indica fragrant rice cultivars(Yuxiangyouzhan and Xiangyaxiangzhan).They were grown under six N-Si fertilization treatments(combinations of two levels of Si fertilizer,0 kg Si ha^(−1)(Si0)and 150 kg Si ha^(−1)(Si1),and three levels of N fertilizer,0 kg N ha^(−1)(N0),150 kg N ha^(−1)(N1),and 220 kg N ha^(−1)(N2))and three plantation methods(artificial transplanting(AT),mechanical transplanting(MT),and mechanical direct-seeding(MD)).The results showed that the N-Si fertilization treatments and all the plantation methods significantly affected the HRY and 2-AP content and related parameters of the two different fragrant rice cultivars.Compared with the Si0N0 treatment,the N-Si fertilization treatments resulted in higher HRY and 2-AP contents.The rates of brown rice,milled rice,head rice,and chalky rice of the fragrant rice also improved with the N-Si fertilization treatments.The N-Si fertilization treatments increased the activities of N metabolism enzymes and the accumulation of N and Si in various parts of the fragrant rice,and affected their antioxidant response parameters.The key parameters for the HRY and 2-AP content were assessed by redundancy analysis.Furthermore,the structural equation model revealed that the Si and N accumulation levels indirectly affected the HRY by affecting the N metabolism enzyme activity,N use efficiency,and grain quality of fragrant rice.Moreover,high N and Si accumulation directly promoted the 2-AP content or affected the antioxidant response parameters and indirectly regulated 2-AP synthesis.The interactions of the MT method with the N-Si fertilization treatments varied in the fragrant rice cultivars in terms of the HRY and 2-AP content,whereas the MD method was beneficial to the 2-AP content in both fragrant rice cultivars under the N-Si fertilization treatments.
基金Science&Technology Department of Sichuan Province(2022YFQ0041,2022NSFSC1725,2023NSFSC0214)China Agriculture Research System(CARS-07-B-1)+2 种基金The National Natural Science Foundation of China(32160428)Innovative Training Program for College Students(202311079040,S202311079112,CDUCX2023550)Undergraduate Education and Teaching Reform Project of Chengdu University(cdjgb2022186).
文摘Aluminum (Al) toxicity is a considerable factor limiting crop yield and biomass in acidic soil. Tartary buckwheatgrowing in acidic soil may suffer from Al poisoning. Here, we investigated the influence of Al stress on the growthof tartary buckwheat seedling roots, and the alleviation of Al stress by silicon (Si), as has been demonstrated inmany crops. Under Al stress, root growth (total root length, primary root length, root tips, root surface area, androot volume) was significantly inhibited, and Al and malondialdehyde (MDA) accumulated in the root tips. At thesame time, catalase (CAT) and ascorbate peroxidase activities, polyphenols, flavonoids, and 1,1-diphenyl-2-picrylhydrazyl(DPPH) and 2,2′-azinobis-(3-ethylbenzthiazoline-6-sulphonate) (ABTS) free-radical scavenging abilitywere significantly decreased. After the application of Si, root growth, Al accumulation, and oxidative damage wereimproved. Compared to Al-treated seedlings, the contents of ·O2− and MDA decreased by 29.39% and 25.22%,respectively. This was associated with Si-induced increases in peroxidase and CAT enzyme activity, flavonoidcompounds, and free-radical scavenging (DPPH and ABTS). The application of Si therefore has positive effectson Al toxicity in tartary buckwheat roots by reducing Al accumulation in the roots and maintaining oxidationhomeostasis.
基金Project supported by the Scientific Research Foundation for Youth Academic Talent of Inner Mongolia University (Grant No.1000023112101/010)the Fundamental Research Funds for the Central Universities of China (Grant No.JN200208)+2 种基金supported by the National Natural Science Foundation of China (Grant No.11474023)supported by the National Key Research and Development Program of China (Grant No.2021YFA1401803)the National Natural Science Foundation of China (Grant Nos.11974051 and 11734002)。
文摘Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal–insulator transition. We investigate the Mott transition in a Hubbard model by using the dynamical mean-field theory and introduce the local quantum state fidelity to depict the Mott metal–insulator transition. The local quantum state fidelity provides a convenient approach to determining the critical point of the Mott transition. Additionally, it presents a consistent description of the two distinct forms of the Mott transition points.
文摘[Objectives]This study was conducted to investigate the scientific application of silicon fertilizer in rice cultivation,one of the staple crops.[Methods]In 2022,Yandu District carried out a special experiment and field demonstration study on the effects of foliar application of Zhengda water-soluble silicon fertilizer on rice production.[Results]The preliminary results showed that①Zhengda water-soluble silicon fertilizer could effectively improve the growth and development of rice and improve the population quality.The peak number of tillers,productive tiller percentage,number of effective panicles and number of effective grains per panicle increased by 6.7%,5.8%,5.5%,and 1.2%,respectively.②The yield and processing quality were improved.After applying silicon fertilizer,the yield per unit area increased by about 6.8%,and the unpolished rice yield,milled rice yield and head rice yield increased by 0.7%,1.94%and 2.15%respectively.[Conclusions]The demonstration application of silicon fertilizer in field cultivation of rice in Yandu District further proves previous research conclusions and has important practical significance.
基金Supported by National Key R and D Program of China,No.2020YFC2008200.
文摘BACKGROUND Endophthalmitis occurring in silicone oil-filled eyes is a very rare occurrence,with reported incidence rates ranging between 0.07%and 0.039%.Traditional methods of management of infectious endophthalmitis include the removal of silicone oil,washout of the vitreous cavity,administration of intravitreal antibiotics,and reinjection of silicone oil.CASE SUMMARY Herein,we report the case of a 39-year-old man with unilateral endophthalmitis after pars plana vitrectomy and silicone oil tamponade.Intravitreal injections of full-dose antibiotics and anterior chamber washout were used to treat the patient.No signs of retinal toxicity were observed during the follow-up period.CONCLUSION Intravitreal full-dose antibiotic injections and anterior chamber washout are promising alternatives to traditional therapies for endophthalmitis in silicone oilfilled eyes.
基金the support of the Joint Funds of the Natural Science Foundation of Hubei Province(2022CFD130)the Technology Innovation Project of Hubei Province(Key Program,No.2023BEB010)+1 种基金the Key Research and Development Program of Hubei Province(No.2021BGD015)the Knowledge Innovation Project of Wuhan(No.2022010801010259).
文摘An experimental investigation into the thermal conductivity of CF-SiC two-phase composite asphalt concrete is presented.The main objective of this study was to verify the possibility of using SiC powder instead of mineral powder as the thermal conductive filler to prepare a new type of asphalt concrete and improve the efficiency of electrothermal snow and ice melting systems accordingly.The thermal conductivity of asphalt concrete prepared with different thermally conductive fillers was tested by a transient plane source method,and the related performances were measured.Then the temperature rise rate and surface temperature were studied through field heating tests.Finally,the actual ice melting efficiency of the thermally conductive asphalt concrete was evaluated using an effective electrothermal system.As shown by the experimental results,the composite made of SiC powder and carbon fiber has a high thermal conductivity.When SiC replaces mineral powder,the thermal conductivity of the asphalt mixture increases first and then decreases with the increase of carbon fiber content.In the present study,in particular,the thermal conductivity attained a peak when the carbon fiber content was 0.2%of the aggregate mass.
文摘The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the past two decades, the conversion efficiency of these cells has remained relatively high. While solar cells have a great potential as a device of renewable energy, the high cost they incur per Watt continues to be a significant barrier to their widespread implementation. As a consequence, it is vital to conduct research into alternate materials that may be used in the construction of solar cells. The heterojunction solar cell (HJSC), which is based on n-type zinc oxide (n-ZnO) and p-type silicon (p-Si), is one of the numerous alternatives of the typical Si single homojunction solar cell. There are many deficiencies that can be found in the published research on n-ZnO/p-Si heterojunction solar cell. Inconsistencies in the stated value of open circuit voltage (V<sub>oc</sub>) of the solar cell are one example of deficiency. The absence of a full theoretical study to evaluate the potential of the solar cell structure is another deficiency that can be found in these researches. A lower value of experimentally obtained V<sub>OC</sub> in comparison to the theoretical prediction based on the band-gap between n-ZnO and p-Si. There needs to be more consensus among scientists regarding the optimal conditions for the growth of zinc oxide. Many software’s are available for simulating and optimizing the solar cells based on these parameters. For this purpose, in this dissertation, I provide computational results relevant to n-ZnO/p-Si HJSC to overcome deficiencies that have been identified. While modeling and simulating the potential of the solar cell structure with AFORS-HET, it is essential to consider the constraints that exist in the real world. AFORS-HET was explicitly designed to mimic the multilayer solar cell arrangement. In AFORS-HET, we can add up to seven layers for solar cell layout. By using this software, we can figure out the open circuit voltage (V<sub>OC</sub>), the short circuit current (J<sub>SC</sub>), the quantum efficiency (QE, %), the heterojunction energy band structure, and the power conversion efficiency (PCE).
文摘The objective of this study is to improve the mechanical properties and machining performance of high thermal conductivity and low expansion silicon carbide dispersion-strengthened hypereutectic aluminum-silicon electronic packaging materials to meet the needs of aviation,aerospace,and electronic packaging fields.We used the powder metallurgy method and high-temperature hot pressing technology to prepare SiC/Al-Si composite materials with different SiC contents(5vol%,10vol%,15vol%,and 20vol%).The results showed that as the SiC content increased,the tensile strength of the composite material first increased and then decreased.The tensile strength was the highest when the SiC content was 15%;the sintering temperature significantly affected the composite material’s structural density and mechanical properties.Findings indicated 700℃was the optimal sintering and the optimal SiC content of SiC/Al-Si composite materials was between 10%and 15%.Besides,the sintering temperature should be strictly controlled to improve the material’s structural density and mechanical properties.
基金Funded by National Natural Science Foundation of China (No.43200021)。
文摘The effects of particle size,gradation and solid loading of silicon nitride (Si_(3)N_(4)) on the rheological behavior and curing properties of ceramic slurry are studied by stereolithography (SLA).The results show that the particle size of Si_(3)N_(4) powder has a signif icant influence on the rheological properties and stability of the slurry.When m_(D50=1.3μm):m_(D50=2.3μm)=3:7,the slurry viscosity is low and the sedimentation is slow.The most important thing is that with the increase of the solid loading of the slurry,the viscosity of the slurry increases,the stability becomes higher,and the curing thickness decreases.The curing thickness of Si_(3)N_(4) ceramic slurry with solid loading of 50 vol% can reach nearly 50μm.The above results finally show that the process optimizes the formulation of the slurry in rheological and curing properties.
