Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxi...Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.展开更多
Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance...Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance and temperature,are input into the model and thus the I-V curves are attained. These curves are consistent with those from other experiments; therefore, the model is verified. However, there still exists a difference between simulated results and experimental results,mainly comes from the stationary case of the master equation. In other words, precision of simulated results would be increased if the transient case of the master equation is considered. Moreover, the current increases exponentially at higher drain voltages, which is due to the fact that the barrier suppression is caused by the image charge potential.展开更多
A reproducible terahertz （THz） photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH3OH gas laser with the frequency 2.54THz. The change of s...A reproducible terahertz （THz） photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH3OH gas laser with the frequency 2.54THz. The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.展开更多
This paper proposes a novel single electron random number generator （RNG）. The generator consists of multiple tunneling junctions （MTJ） and a hybrid single electron transistor （SET）/MOS output circuit. It is an ...This paper proposes a novel single electron random number generator （RNG）. The generator consists of multiple tunneling junctions （MTJ） and a hybrid single electron transistor （SET）/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator, which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.展开更多
A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique desi...A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.展开更多
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is ...We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.展开更多
Focused ion-beam-induced deposition （FIBID） and focused electron-beam-induced deposition （FEBID） are conve- nient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum prec...Focused ion-beam-induced deposition （FIBID） and focused electron-beam-induced deposition （FEBID） are conve- nient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum precursor, the con- ductive lines directly written by focused ion-beam （FIB） and focused electron-beam （FEB） are carbon-rich materials. We discuss an alternative approach to enhancing the platinum content and improving the conductivity of the conductive leads produced by FIBID and FEBID, namely an annealing treatment. Annealing in pure oxygen at 500 ℃ for 30 min enhances the platinum content values from ~ 18% to 30% and ~ 50% to 90% of FIBID and FEBID, respectively. Moreover, we find that thin films will be formed in the FIBID and FEBID processes. The annealing treatment is helpful to avoid the current leakage caused by these thin films. A single electron transistor is fabricated by FEBID and the current-voltage curve shows the Coulomb blockade effect.展开更多
A square graphene single electron transistor （SET） was defined with two side gates, and its transport was studied at low temperature at T = 2 K. At zero magnetic field, Coulomb blockade oscillations were clearly obs...A square graphene single electron transistor （SET） was defined with two side gates, and its transport was studied at low temperature at T = 2 K. At zero magnetic field, Coulomb blockade oscillations were clearly observed near the Dirac point of this device. At high magnetic field, in the quantum Hall regime, we observed ballistic tunneling of the carders through the graphene SET, contrary to the Coulomb blockades observed while approaching the vicinity of the Dirac point.展开更多
Based on the I-V characteristics and the function of adjustable threshold voltage of a single electron transistor （SET）, we design the basic ternary logic circuits, which have been simulated by SPICE and their power...Based on the I-V characteristics and the function of adjustable threshold voltage of a single electron transistor （SET）, we design the basic ternary logic circuits, which have been simulated by SPICE and their power and transient characteristics have been extensively analyzed. The simulation results indicate that the proposed circuits exhibit a simpler structure, smaller signal delay and lower power.展开更多
Single electron transistors（SETs） are known to be extremely sensitive electrometers owing to their high charge sensitivity. In this work, we report the design, fabrication, and characterization of a silicon-on-insul...Single electron transistors（SETs） are known to be extremely sensitive electrometers owing to their high charge sensitivity. In this work, we report the design, fabrication, and characterization of a silicon-on-insulatorbased SET scanning probe. The fabricated SET is located about 10 m away from the probe tip. The SET with a quantum dot of about 70 nm in diameter exhibits an obvious Coulomb blockade effect measured at 4.1 K. The Coulomb blockade energy is about 18 me V, and the charge sensitivity is in the order of 10^-（5）–10（^-3）e/Hz^（1/2）. This SET scanning probe can be used to map charge distribution and sense dynamic charge fluctuation in nanodevices or circuits under test, realizing high sensitivity and high spatial resolution charge detection.展开更多
Multi-component active materials are widely used for organic electronic devices, with every component contributing complementary and synergistic optoelectronic functions. Mixing these components generally leads to low...Multi-component active materials are widely used for organic electronic devices, with every component contributing complementary and synergistic optoelectronic functions. Mixing these components generally leads to lowered crystallinity and weakened charge transport. Therefore, preparing the active materials without substantially disrupting the crystalline lattice is highly desired. Here, we show that crystallization of TIPS-pentacene from solutions in the presence of fluorescent nanofibers of a perylene bisimide derivative （PBI） leads to formation of composites with nanoflber guest incorporated in the crystal host. In spite of the binary composite structure, the TIPS-pentacene maintains the single- crystalline nature. As a result, the incorporation of the PB1 guest introduces additional fluorescence function but does not significantly reduce the charge transport property of the TIPS-pentacene host, exhibiting field-effect mobility as high as 3.34 cm^2 V^-1 s^-1 even though 26.4% of the channel area is taken over by the guest. As such, this work provides a facile approach toward high-performance multifunctional organic electronic materials.展开更多
文摘Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.
文摘Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance and temperature,are input into the model and thus the I-V curves are attained. These curves are consistent with those from other experiments; therefore, the model is verified. However, there still exists a difference between simulated results and experimental results,mainly comes from the stationary case of the master equation. In other words, precision of simulated results would be increased if the transient case of the master equation is considered. Moreover, the current increases exponentially at higher drain voltages, which is due to the fact that the barrier suppression is caused by the image charge potential.
文摘A reproducible terahertz （THz） photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH3OH gas laser with the frequency 2.54THz. The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.
文摘This paper proposes a novel single electron random number generator （RNG）. The generator consists of multiple tunneling junctions （MTJ） and a hybrid single electron transistor （SET）/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator, which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11074280 and 11403084the Instrument Developing Project of Chinese Academy of Sciences under Grant No YZ201152+2 种基金the Fundamental Research Funds for Central Universities under Grant Nos JUSRP51323B and JUDCF12032the Joint Innovation Project of Jiangsu Province under Grant No BY2013015-19the Graduate Student Innovation Program for Universities of Jiangsu Province under Grant No CXLX12_0724
文摘A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFA0303200the National Natural Science Foundation of China under Grant Nos U1732273,U1732159,91421109,91622115,11522432,11574217 and 61774133the Natural Science Foundation of Jiangsu Province under Grant No BK20160659
文摘We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.
基金Project supported by the Research Project of National University of Defense Technology,China(Grant No.JC13-02-14)the National Natural Science Foundation of China(Grant No.11104349)
文摘Focused ion-beam-induced deposition （FIBID） and focused electron-beam-induced deposition （FEBID） are conve- nient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum precursor, the con- ductive lines directly written by focused ion-beam （FIB） and focused electron-beam （FEB） are carbon-rich materials. We discuss an alternative approach to enhancing the platinum content and improving the conductivity of the conductive leads produced by FIBID and FEBID, namely an annealing treatment. Annealing in pure oxygen at 500 ℃ for 30 min enhances the platinum content values from ~ 18% to 30% and ~ 50% to 90% of FIBID and FEBID, respectively. Moreover, we find that thin films will be formed in the FIBID and FEBID processes. The annealing treatment is helpful to avoid the current leakage caused by these thin films. A single electron transistor is fabricated by FEBID and the current-voltage curve shows the Coulomb blockade effect.
基金supported by the National Natural Science Foundation of China (Grant No. 10874220)the Main Direction Program of Knowledge Innovation of Chinese Academy of Sciences (Grant No. KJCX2-YW- W30)the Natinal Basic Research Program of China from the MOST (Grant No. 2011CB932704)
文摘A square graphene single electron transistor （SET） was defined with two side gates, and its transport was studied at low temperature at T = 2 K. At zero magnetic field, Coulomb blockade oscillations were clearly observed near the Dirac point of this device. At high magnetic field, in the quantum Hall regime, we observed ballistic tunneling of the carders through the graphene SET, contrary to the Coulomb blockades observed while approaching the vicinity of the Dirac point.
文摘Based on the I-V characteristics and the function of adjustable threshold voltage of a single electron transistor （SET）, we design the basic ternary logic circuits, which have been simulated by SPICE and their power and transient characteristics have been extensively analyzed. The simulation results indicate that the proposed circuits exhibit a simpler structure, smaller signal delay and lower power.
基金Project supported by the Instrument Developing Project of the Chinese Academy of Sciences(No.YZ201152)the National Natural Science Foundation of China(No.11403084)+1 种基金the Fundamental Research Funds for Central Universities(Nos.JUSRP51510,JUDCF12032)the Graduate Student Innovation Program for Universities of Jiangsu Province(No.CXLX12_0724)
文摘Single electron transistors（SETs） are known to be extremely sensitive electrometers owing to their high charge sensitivity. In this work, we report the design, fabrication, and characterization of a silicon-on-insulatorbased SET scanning probe. The fabricated SET is located about 10 m away from the probe tip. The SET with a quantum dot of about 70 nm in diameter exhibits an obvious Coulomb blockade effect measured at 4.1 K. The Coulomb blockade energy is about 18 me V, and the charge sensitivity is in the order of 10^-（5）–10（^-3）e/Hz^（1/2）. This SET scanning probe can be used to map charge distribution and sense dynamic charge fluctuation in nanodevices or circuits under test, realizing high sensitivity and high spatial resolution charge detection.
基金supported by the 973 Program (No. 2014CB643503)National Natural Science Foundation of China (Nos. 51625304, 51373150, 51461165301, 51573055)the Open Foundation Project of the State Key Lab of Silicon Materials (No. SKL2017-08)
文摘Multi-component active materials are widely used for organic electronic devices, with every component contributing complementary and synergistic optoelectronic functions. Mixing these components generally leads to lowered crystallinity and weakened charge transport. Therefore, preparing the active materials without substantially disrupting the crystalline lattice is highly desired. Here, we show that crystallization of TIPS-pentacene from solutions in the presence of fluorescent nanofibers of a perylene bisimide derivative （PBI） leads to formation of composites with nanoflber guest incorporated in the crystal host. In spite of the binary composite structure, the TIPS-pentacene maintains the single- crystalline nature. As a result, the incorporation of the PB1 guest introduces additional fluorescence function but does not significantly reduce the charge transport property of the TIPS-pentacene host, exhibiting field-effect mobility as high as 3.34 cm^2 V^-1 s^-1 even though 26.4% of the channel area is taken over by the guest. As such, this work provides a facile approach toward high-performance multifunctional organic electronic materials.
