In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-...In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) film.Ultrahigh responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were obtained.The detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak signals.Moreover,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of 105.These results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.展开更多
A Ga_(2)O_(3)/diamond separate absorption and multiplication avalanche photodiode(SAM-APD)with mesa structure has been proposed and simulated.The simulation is based on an optimized Ga_(2)O_(3)/diamond heterostructure...A Ga_(2)O_(3)/diamond separate absorption and multiplication avalanche photodiode(SAM-APD)with mesa structure has been proposed and simulated.The simulation is based on an optimized Ga_(2)O_(3)/diamond heterostructure TCAD physical model,which is revised by repeated comparison with the experimental data from the literature.Since both Ga_(2)O_(3)and diamond are ultra-wide bandgap semiconductor materials,the Ga_(2)O_(3)/diamond SAM-APD shows good solar-blind detection ability,and the corresponding cutoff wavelength is about 263 nm.The doping distribution and the electric field distribution of the SAM-APD are discussed,and the simulation results show that the gain of the designed device can reach 5×10^(4)and the peak responsivity can reach a value as high as 78 A/W.展开更多
Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron s...Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga_(2)O_(3) films changed from amorphous to β-Ga_(2)O_(3) after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm.The β-Ga_(2)O_(3) had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm.The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga_(2)O_(3) thin film annealed in N_2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA,the photo dark current ratio is 1.7 × 10~6, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10~3%, the specific detection rate is 2.61 × 10~(12) Jones, the response time and recovery time are 378 and 90 ms, respectively.展开更多
We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic t...We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga_2O_3 interface is realized by tuning the conductivity of amorphous Ga_2O_3 films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga_2O_3 interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity(PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA,a high detectivity of 9.82×10^(12) cm·Hz^(1/2)·W^(-1), a fast response time of 243.9 μs, and a high ultraviolet C(UVC)-toultraviolet A(UVA) rejection ratio of 103. The promoting performance is attributed primarily to the reduction of the subgap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.展开更多
In the present work, we explore the solar-blind ultraviolet(UV) photodetectors(PDs) with enhanced photoresponse,fabricated on Ga/Ga_2O_3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-anne...In the present work, we explore the solar-blind ultraviolet(UV) photodetectors(PDs) with enhanced photoresponse,fabricated on Ga/Ga_2O_3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2 O3/Ga/Ga_2O_3 structures, Ga/Ga_2O_3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 p A at 10-V bias, a very high light-to-dark ratio of ～ 8 × 10~5, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of ～ 220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics.展开更多
A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultra...A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet(UV) transmittance.The quantum efficiency is about 400% at 42 V. The Ga_2O_3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible(= 3213) and solar-blind/UV(= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature(RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.展开更多
Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α...Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga_2O_3 thin film solar-blind photodetectors(SBPDs) were prepared.Comparing the responsivities of the mixed-phase Ga_2O_3 SBPDs and the single β-Ga_2O_3 SBPDs at a bias voltage of 25 V,it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga_2O_3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga_2O_3 thin film SBPDs.展开更多
Solar-blind ultraviolet photodetectors have many advantages, such as low false alarm rates, the ability to detect weak signals, and high signal-to-noise ratios. Among the various functional solar-blind ultraviolet pho...Solar-blind ultraviolet photodetectors have many advantages, such as low false alarm rates, the ability to detect weak signals, and high signal-to-noise ratios. Among the various functional solar-blind ultraviolet photodetectors, Ga-based alloys of AlGaN and Ga_2O_3 are the most commonly adopted channel semiconductor materials and have attracted extensive research attention in the past decades. This review presents an overview of the recent progress in Ga-based solar-blind photodetectors. In case of AlGaN-based solar-blind ultraviolet photodetectors, the response properties can be improved by optimizing the AlN nucleation layer and designing the avalanche structure. On the other hand, we also discuss the morphology and growth methods of Ga_2O_3 nanomaterials and their effect on the performance of the corresponding solarblind photodetectors. The mechanically exfoliated Ga_2O_3 flakes show good potential for ultraviolet detection. Also, Ga_2O_3 nanoflowers and nanowires reveal perfect response to ultraviolet light. Finally, the challenges and future development of Ga-based functional solar-blind ultraviolet photodetectors are summarized.展开更多
Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photo...Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.展开更多
We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detecto...We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.展开更多
Theα-Ga2 O_(3)nanorod array is grown on FTO by hydrothermal and annealing processes.And a self-powered PEDOT:PSS/α-Ga_(2)O_(3)nanorod array/FTO(PGF)photodetector has been demonstrated by spin coating PEDOT:PSS on th...Theα-Ga2 O_(3)nanorod array is grown on FTO by hydrothermal and annealing processes.And a self-powered PEDOT:PSS/α-Ga_(2)O_(3)nanorod array/FTO(PGF)photodetector has been demonstrated by spin coating PEDOT:PSS on theα-Ga_(2)O_(3)nanorod array.Successfully,the PGF photodetector shows solar-blind UV/visible dual-band photodetection.Our device possesses comparable solar-blind UV responsivity(0.18 mA/W at 235 nm)and much faster response speed(0.102 s)than most of the reported self-poweredα-Ga_(2)O_(3)nanorod array solar-blind UV photodetectors.And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm.The response time is also much faster than the other non-self-poweredβ-Ga_(2)O_(3)DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/α-Ga_(2)O_(3)heterojunction.The results herein may prove a promising way to realize fast-speed self-poweredα-Ga_(2)O_(3)photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking,imaging,machine vision and communication.展开更多
It is well known that Ⅲ-nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization ele...It is well known that Ⅲ-nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode(APD) with an Al_(0.45)Ga_(0.55)N/Al_(0.3)Ga_(0.7)N heterostructure as separate absorption and multiplication(SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al_(0.45)Ga_(0.55)N/Al_(0.3)Ga_(0.7)N heterostructure SAM regions used in APDs instead of homogeneous Al_(0.45)Ga_(0.55)N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AIN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.展开更多
Wide-bandgap gallium oxide(Ga_(2)O_(3))is one of the most promising semiconductor materials for solar-blind(200 nm to 280 nm)photodetection.In its amorphous form,amorphous gallium oxide(a-Ga_(2)O_(3))maintains its int...Wide-bandgap gallium oxide(Ga_(2)O_(3))is one of the most promising semiconductor materials for solar-blind(200 nm to 280 nm)photodetection.In its amorphous form,amorphous gallium oxide(a-Ga_(2)O_(3))maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature,thus it is compatible with Si integrated circuits(ICs)technology.Herein,the a-Ga_(2)O_(3) film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition(PE-ALD)at a growth temperature of 250°C.The stoichiometric a-Ga_(2)O_(3) thin film with a low defect density is achieved owing to the mild PE-ALD condition.As a result,the fabricated Au/a-Ga_(2)O_(3)/Au photodetector shows a fast time response,high responsivity,and excellent wavelength selectivity for solar-blind photodetection.Furthermore,an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga_(2)O_(3)/Au interface,resulting in the responsivity of 788 A/W(under 254 nm at 10 V),a 250-nm-to-400-nm rejection ratio of 9.2×10^(3),and the rise time and the decay time of 32 ms and 6 ms,respectively.These results demonstrate that the a-Ga_(2)O_(3) film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.展开更多
We have developed a superior solar-blind ultraviolet(UV) photocathode with an Al_xGa_(1-x)N photocathode(x ～ 0.45)in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before be...We have developed a superior solar-blind ultraviolet(UV) photocathode with an Al_xGa_(1-x)N photocathode(x ～ 0.45)in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition(MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the Al_xGa_(1-x)N: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.展开更多
Solar-blind ultraviolet(UV) band-pass filter has significant value in many scientific, commercial, and military applications, in which the detection of weak UV signal against a strong background of solar radiation is ...Solar-blind ultraviolet(UV) band-pass filter has significant value in many scientific, commercial, and military applications, in which the detection of weak UV signal against a strong background of solar radiation is required. In this work, a solar-blind filter is designed based on the concept of "transparent metal". The filter consisting of Al/SiO2multilayers could exhibit a high transmission in the solar-blind wavelength region and a wide stopband extending from near-ultraviolet to infrared wavelength range. The central wavelength, bandwidth, Q factor, and rejection ratio of the passband are numerically studied as a function of individual layer thickness and multilayer period.展开更多
Heterojunctions composed ofβ-Ga2 O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method.The heterojunction possesses excellent rectifying characteristics with an asymm...Heterojunctions composed ofβ-Ga2 O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method.The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 105.Prominent solar-blind photoresponse effect is also observed in the formed heterojunction.The photodetector exhibits a self-powered behavior with a fast response speed(rise time and decay time are 0.035 s and 0.032 s respectively)at zero bias.The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.展开更多
Transparent solar-blind ultraviolet photodetectors(SBUV PDs)have extensive applications in versatile scenarios,such as optical communication.However,it is still challenging to simultaneously achieve high responsivity,...Transparent solar-blind ultraviolet photodetectors(SBUV PDs)have extensive applications in versatile scenarios,such as optical communication.However,it is still challenging to simultaneously achieve high responsivity,high transparency,and satisfying self-powered capability.Here,we demonstrated high-performance,transparent,and self-powered photoelectrochemical-type(PEC)SBUV PDs based on vertically grown ultrathin In_(2)O_(3) nanosheet arrays(NAs)with a three-dimensional(3D)porous structure.The 3D porous structure simultaneously improves the transmittance in the visible light region,accelerates interfacial reaction kinetics,and promotes photogenerated carrier transport.The performance of In_(2)O_(3) NAs photoanodes exceeds most reported self-powered PEC SBUV PDs,exhibiting a high transmittance of approximately 80%in the visible light region,a high responsivity of 86.15 mA/W for 254 nm light irradiation,a fast response speed of 15/18 ms,and good multicycle stability.The In_(2)O_(3) NAs also show excellent spectral selectivity with an ultrahigh solar-blind rejection ratio of 1319.30,attributed to the quantum confinement effect induced by the ultrathin feature(2-3 nm).Furthermore,In_(2)O_(3) NAs photoanodes show good capability in underwater optical communication.Our work demonstrated that a 3D porous structure is a powerful strategy to synchronously achieve high responsivity and transparency and provides a new perspective for designing high-performance,transparent,and self-powered PEC SBUV PDs.展开更多
Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O...Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O_(3) with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein,we construct an APD consisting of epitaxial β-Ga_(2)O_(3)/La_(0.8)Ca_(0.2)MnO_(3) heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to 3.0 × 10~5 at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance Ga_(2)O_(3)-based electronics and optoelectronics.展开更多
Detection of solar-blind ultraviolet(SB-UV)light is important in applications like confidential communication,flame detection,and missile warning system.However,the existing SB-UV photodetectors still show low sensiti...Detection of solar-blind ultraviolet(SB-UV)light is important in applications like confidential communication,flame detection,and missile warning system.However,the existing SB-UV photodetectors still show low sensitivities.In this work,we demonstrate the extraordinary SB-UV detection performance of α-In_(2)Se_(3 )phototransistors.Benefiting from the coupled semiconductor and ferroelectricity property,the phototransistor has an ultraweak detectable power of 17.85 fW,an ultrahigh gain of 1.2×10^(6),a responsivity of 2.6×10^(5) A/W,a detectivity of 1.3×10^(16) Jones and an ultralow noise-equivalent-power of 4.2×10^(–20 )W/Hz1/2 for 275 nm light.Its performance exceeds most other UV detectors,even including commercial photomultiplier tubes and avalanche photodiodes.It can be also implemented as an optoelectronic synapse for neuromorphic computing.A 784×300×10 artificial neural network(ANN)based on this optoelectronic synapse is constructed and demonstrated with a high recognition accuracy and good noise-tolerance for the Fashion-MNIST dataset.These extraordinary features endow this phototransistor with the potential for constructing advanced SB-UV detectors and intelligent hardware.展开更多
Solar-blind imaging has attracted considerable interest in both military and civilian applications,spurring the development of high-performance deep-ultraviolet photodetector arrays(PDAs) with wide-bandgap semiconduct...Solar-blind imaging has attracted considerable interest in both military and civilian applications,spurring the development of high-performance deep-ultraviolet photodetector arrays(PDAs) with wide-bandgap semiconductor materials.Herein,we present a novel method to enhance the performance of solar-blind PDAs(SBPDs) using β-Ga_(2)O_(3) films obtained by the phase transition of heterogeneous epitaxial sub-stable ε-Ga_(2)O_(3),achieved through high-temperature rapid annealing.Metal-semiconductor-metaltype SBPDs based on phase-transformed β-Ga_(2)O_(3) films exhibited superior performance,including an ultrahigh responsivity of 459.38 A/W,detectivity of 10^(14)–10^(15) Jones,external quantum efficiency of 10^(4)%–10^(5)%,rejection ratio(R_(254)/R_(365)) of 10^(5)–10^(6),photo-to-dark current ratio of 10^(4)–10^(6),fast response speed of 1.01 s/0.06 s,and favorable stability.Notably,the ultrahigh responsivity of β-Ga_(2)O_(3)-film-based devices was approximately 222-fold higher than that of ε-Ga_(2)O_(3) film-based devices.The assembled 4×5 β-Ga_(2)O_(3) film-based PDAs exhibited favorable uniformity,repeatability,and high spatial resolution for solarblind imaging.Our study offers a promising approach for the development of high-performance β-Ga_(2)O_(3)-based PDAs for solarblind ultraviolet imaging with potential applications in both military and civilian fields.展开更多
基金This work was supported by the National Key Research and Development Program of China(Grant No.2020YFB2206103)。
文摘In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) film.Ultrahigh responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were obtained.The detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak signals.Moreover,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of 105.These results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3608602)the Beijing Municipal Science and Technology Commission(Grant No.Z181100004418009)the National Natural Science Foundation of China(Grant No.61927806)。
文摘A Ga_(2)O_(3)/diamond separate absorption and multiplication avalanche photodiode(SAM-APD)with mesa structure has been proposed and simulated.The simulation is based on an optimized Ga_(2)O_(3)/diamond heterostructure TCAD physical model,which is revised by repeated comparison with the experimental data from the literature.Since both Ga_(2)O_(3)and diamond are ultra-wide bandgap semiconductor materials,the Ga_(2)O_(3)/diamond SAM-APD shows good solar-blind detection ability,and the corresponding cutoff wavelength is about 263 nm.The doping distribution and the electric field distribution of the SAM-APD are discussed,and the simulation results show that the gain of the designed device can reach 5×10^(4)and the peak responsivity can reach a value as high as 78 A/W.
基金supported by the National Natural Science Foundation of China (Grant No. 62204203)the Shaanxi Natural Science Basic Research Program (Grant No. 2022JQ-701)。
文摘Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga_(2)O_(3) films changed from amorphous to β-Ga_(2)O_(3) after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm.The β-Ga_(2)O_(3) had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm.The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga_(2)O_(3) thin film annealed in N_2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA,the photo dark current ratio is 1.7 × 10~6, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10~3%, the specific detection rate is 2.61 × 10~(12) Jones, the response time and recovery time are 378 and 90 ms, respectively.
基金Project supported by the National Key Research and Development Project,China(Grant No.2017YFB0403003)the National Natural Science Foundation of China(Grant Nos.61774081,61322403,and 91850112)+3 种基金the State Key Research and Development Project of Jiangsu Province,China(Grant No.BE2018115)Shenzhen Fundamental Research Project,China(Grant Nos.201773239 and 201888588)the Project of the State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices,China(Grant No.2017KF001)the Fundamental Research Funds for the Central Universities,China(Grant Nos.021014380093 and 021014380085)
文摘We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga_2O_3 interface is realized by tuning the conductivity of amorphous Ga_2O_3 films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga_2O_3 interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity(PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA,a high detectivity of 9.82×10^(12) cm·Hz^(1/2)·W^(-1), a fast response time of 243.9 μs, and a high ultraviolet C(UVC)-toultraviolet A(UVA) rejection ratio of 103. The promoting performance is attributed primarily to the reduction of the subgap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.
基金supported by the National Natural Science Foundation of China(Grant Nos.11674405 and 11675280)the Fund from the Laboratory of Microfabrication in Institute of Physics,Chinese Academy of Sciences
文摘In the present work, we explore the solar-blind ultraviolet(UV) photodetectors(PDs) with enhanced photoresponse,fabricated on Ga/Ga_2O_3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2 O3/Ga/Ga_2O_3 structures, Ga/Ga_2O_3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 p A at 10-V bias, a very high light-to-dark ratio of ～ 8 × 10~5, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of ～ 220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics.
基金Project supported by National Key Research and Development Plan of China(Grant Nos.2016YFB0400600 and 2016YFB0400601)the National Natural Science Foundation of China(Grant Nos.61574026,11675198,61774072,and 11405017)+2 种基金the Natural Science Foundation of Liaoning Province,China(Grant Nos.201602453 and 201602176)China Postdoctoral Science Foundation Funded Project(Grant No.2016M591434)the Dalian Science and Technology Innovation Fund(Grant No.2018J12GX060)
文摘A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet(UV) transmittance.The quantum efficiency is about 400% at 42 V. The Ga_2O_3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible(= 3213) and solar-blind/UV(= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature(RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51872187,51302174,11774241,and 61704111)the National Key Research and Development Program of China(Grant No.2017YFB0400304)+3 种基金the Natural Science Foundation of Guangdong Province,China(Grant Nos.2016A030313060 and 2017A030310524)the Project of Department of Education of Guangdong Province,China(Grant No.2014KTSCX110)the Fundamental Research Project of Shenzhen,China(Grant No.JCYJ20180206162132006)the Science and Technology Foundation of Shenzhen,China(Grant No.JCYJ2015-2018)
文摘Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga_2O_3 thin film solar-blind photodetectors(SBPDs) were prepared.Comparing the responsivities of the mixed-phase Ga_2O_3 SBPDs and the single β-Ga_2O_3 SBPDs at a bias voltage of 25 V,it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga_2O_3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga_2O_3 thin film SBPDs.
基金Project supported by the National Key Reserch and Development Program of China(Grant No.2017YFA0305500)the Fund from Science Technology and Innovation Committee of Shenzhen Municipality,China(Grant No.JCYJ20170307093131123)+6 种基金the National Natural Science Foundation of China(Grant No.61504044)the Key Research and Development Program of Shandong Province,China(Grant Nos.2018GGX101027,2017GGX201002,2017CXGC0412,2016ZDJS09A05,and 2016GGX4101)Shandong Provincial Natural Science Foundation,China(Grant No.ZR2017MF037)"Qilu Young Scholar" Program of Shandong UniversityYantai "13th Five-Year" Marine Economic Innovation and Development Demonstration City Project,China(Grant No.YHCXZB-L-201703)the Union Funds of Guizhou Science and Technology Department and Guizhou Minzu University,China(Grant No.LH20157221)the Fundamental Research Funds of Shandong University,China(Grant Nos.2018WLJH87 and 2017TB0021)
文摘Solar-blind ultraviolet photodetectors have many advantages, such as low false alarm rates, the ability to detect weak signals, and high signal-to-noise ratios. Among the various functional solar-blind ultraviolet photodetectors, Ga-based alloys of AlGaN and Ga_2O_3 are the most commonly adopted channel semiconductor materials and have attracted extensive research attention in the past decades. This review presents an overview of the recent progress in Ga-based solar-blind photodetectors. In case of AlGaN-based solar-blind ultraviolet photodetectors, the response properties can be improved by optimizing the AlN nucleation layer and designing the avalanche structure. On the other hand, we also discuss the morphology and growth methods of Ga_2O_3 nanomaterials and their effect on the performance of the corresponding solarblind photodetectors. The mechanically exfoliated Ga_2O_3 flakes show good potential for ultraviolet detection. Also, Ga_2O_3 nanoflowers and nanowires reveal perfect response to ultraviolet light. Finally, the challenges and future development of Ga-based functional solar-blind ultraviolet photodetectors are summarized.
基金the National Natural Science Foundation of China(Grant Nos.61774019 and 51572033)the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)the Fundamental Research Funds for the Central Universities,China.
文摘Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.
基金Project supported by BUPT Excellent Ph.D.Students Foundation(Grant No.CX2020314)the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)+1 种基金the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)the Fundamental Research Funds for the Central Universities,China。
文摘We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.
基金Project supported by the National Natural Science Foundation of China(Grant No.61705155)。
文摘Theα-Ga2 O_(3)nanorod array is grown on FTO by hydrothermal and annealing processes.And a self-powered PEDOT:PSS/α-Ga_(2)O_(3)nanorod array/FTO(PGF)photodetector has been demonstrated by spin coating PEDOT:PSS on theα-Ga_(2)O_(3)nanorod array.Successfully,the PGF photodetector shows solar-blind UV/visible dual-band photodetection.Our device possesses comparable solar-blind UV responsivity(0.18 mA/W at 235 nm)and much faster response speed(0.102 s)than most of the reported self-poweredα-Ga_(2)O_(3)nanorod array solar-blind UV photodetectors.And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm.The response time is also much faster than the other non-self-poweredβ-Ga_(2)O_(3)DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/α-Ga_(2)O_(3)heterojunction.The results herein may prove a promising way to realize fast-speed self-poweredα-Ga_(2)O_(3)photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking,imaging,machine vision and communication.
基金Supported by the State Key Project of Research and Development Plan of China under Grant No 2016YFB0400903the National Natural Science Foundation of China under Grant Nos 61634002,61274075 and 61474060+2 种基金the Key Project of Jiangsu Province under Grant No BE2016174the Anhui University Natural Science Research Project under Grant No KJ2015A153the Open Fund of State KeyLab of Optical Technologies on Nano-fabrication and Micro-engineering
文摘It is well known that Ⅲ-nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode(APD) with an Al_(0.45)Ga_(0.55)N/Al_(0.3)Ga_(0.7)N heterostructure as separate absorption and multiplication(SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al_(0.45)Ga_(0.55)N/Al_(0.3)Ga_(0.7)N heterostructure SAM regions used in APDs instead of homogeneous Al_(0.45)Ga_(0.55)N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AIN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.
基金This work was supported by the National Natural Science Foundation of China under Grant No.21872019 and the Innovation Group Project of Sichuan Province under Grant No.20CXTD0090This work was also partly supported by the Slovenian Research Agency under Grants No.P2-0412 and No.J2-2498 for A.Mavric and M.Valant,and No.Z1-3189 for N.Pastukhova。
文摘Wide-bandgap gallium oxide(Ga_(2)O_(3))is one of the most promising semiconductor materials for solar-blind(200 nm to 280 nm)photodetection.In its amorphous form,amorphous gallium oxide(a-Ga_(2)O_(3))maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature,thus it is compatible with Si integrated circuits(ICs)technology.Herein,the a-Ga_(2)O_(3) film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition(PE-ALD)at a growth temperature of 250°C.The stoichiometric a-Ga_(2)O_(3) thin film with a low defect density is achieved owing to the mild PE-ALD condition.As a result,the fabricated Au/a-Ga_(2)O_(3)/Au photodetector shows a fast time response,high responsivity,and excellent wavelength selectivity for solar-blind photodetection.Furthermore,an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga_(2)O_(3)/Au interface,resulting in the responsivity of 788 A/W(under 254 nm at 10 V),a 250-nm-to-400-nm rejection ratio of 9.2×10^(3),and the rise time and the decay time of 32 ms and 6 ms,respectively.These results demonstrate that the a-Ga_(2)O_(3) film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.
基金supported by the National Natural Science Foundation of China(Grant No.10974015)the National Defense Pre-Research Foundation of China(Grant No.9140C380502150C38002)
文摘We have developed a superior solar-blind ultraviolet(UV) photocathode with an Al_xGa_(1-x)N photocathode(x ～ 0.45)in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition(MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the Al_xGa_(1-x)N: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.
基金supported by the National Basic Research Program of China(Grant Nos.2010CB327504,2011CB922100,and 2011CB301900)the National NaturalScience Foundation of China(Grant Nos.60936004 and 11104130)+1 种基金the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011556 andBK2011050)the Priority Academic Program Development of Jiangsu Higher Education Institutions,China
文摘Solar-blind ultraviolet(UV) band-pass filter has significant value in many scientific, commercial, and military applications, in which the detection of weak UV signal against a strong background of solar radiation is required. In this work, a solar-blind filter is designed based on the concept of "transparent metal". The filter consisting of Al/SiO2multilayers could exhibit a high transmission in the solar-blind wavelength region and a wide stopband extending from near-ultraviolet to infrared wavelength range. The central wavelength, bandwidth, Q factor, and rejection ratio of the passband are numerically studied as a function of individual layer thickness and multilayer period.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,61774019,61704153,and 11404029)the Fund from the State Key Laboratory of Information Photonics and Optical Communications(BUPT),Chinathe Fundamental Research Funds for the Central Universities,China
文摘Heterojunctions composed ofβ-Ga2 O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method.The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 105.Prominent solar-blind photoresponse effect is also observed in the formed heterojunction.The photodetector exhibits a self-powered behavior with a fast response speed(rise time and decay time are 0.035 s and 0.032 s respectively)at zero bias.The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.
基金support from Fundamental Research Funds for the Central Universities(No.2572023AW26)the Innovation Foundation for the Doctoral Program of Forestry Engineering of Northeast Forestry University(No.LYGC202227).
文摘Transparent solar-blind ultraviolet photodetectors(SBUV PDs)have extensive applications in versatile scenarios,such as optical communication.However,it is still challenging to simultaneously achieve high responsivity,high transparency,and satisfying self-powered capability.Here,we demonstrated high-performance,transparent,and self-powered photoelectrochemical-type(PEC)SBUV PDs based on vertically grown ultrathin In_(2)O_(3) nanosheet arrays(NAs)with a three-dimensional(3D)porous structure.The 3D porous structure simultaneously improves the transmittance in the visible light region,accelerates interfacial reaction kinetics,and promotes photogenerated carrier transport.The performance of In_(2)O_(3) NAs photoanodes exceeds most reported self-powered PEC SBUV PDs,exhibiting a high transmittance of approximately 80%in the visible light region,a high responsivity of 86.15 mA/W for 254 nm light irradiation,a fast response speed of 15/18 ms,and good multicycle stability.The In_(2)O_(3) NAs also show excellent spectral selectivity with an ultrahigh solar-blind rejection ratio of 1319.30,attributed to the quantum confinement effect induced by the ultrathin feature(2-3 nm).Furthermore,In_(2)O_(3) NAs photoanodes show good capability in underwater optical communication.Our work demonstrated that a 3D porous structure is a powerful strategy to synchronously achieve high responsivity and transparency and provides a new perspective for designing high-performance,transparent,and self-powered PEC SBUV PDs.
基金supported by the National Natural Science Foundation of China (Nos. 12074044, 11874230, 52233014, and 12274243)the Fund of State Key Laboratory of Information Photonics and Optical Communications (No. IPOC2021ZT05)the Fundamental Research Funds for the Central Universities (BUPT)。
文摘Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O_(3) with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein,we construct an APD consisting of epitaxial β-Ga_(2)O_(3)/La_(0.8)Ca_(0.2)MnO_(3) heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to 3.0 × 10~5 at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance Ga_(2)O_(3)-based electronics and optoelectronics.
基金supported by the National Key R&D Program of China(Grant Nos.2021YFA1201500 and 2018YFA0703700)the National Natural Science Foundation of China(Nos.91964203,61974036,62274046,22179029,and 12204122)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Nos.XDB44000000)the Fundamental Research Funds for the Central Universities(No.2042021kf0067)CAS Key Laboratory of Nanosystem and Hierarchical Fabrication.The authors also gratefully acknowledge the support of Youth Innovation Promotion Association CAS.
文摘Detection of solar-blind ultraviolet(SB-UV)light is important in applications like confidential communication,flame detection,and missile warning system.However,the existing SB-UV photodetectors still show low sensitivities.In this work,we demonstrate the extraordinary SB-UV detection performance of α-In_(2)Se_(3 )phototransistors.Benefiting from the coupled semiconductor and ferroelectricity property,the phototransistor has an ultraweak detectable power of 17.85 fW,an ultrahigh gain of 1.2×10^(6),a responsivity of 2.6×10^(5) A/W,a detectivity of 1.3×10^(16) Jones and an ultralow noise-equivalent-power of 4.2×10^(–20 )W/Hz1/2 for 275 nm light.Its performance exceeds most other UV detectors,even including commercial photomultiplier tubes and avalanche photodiodes.It can be also implemented as an optoelectronic synapse for neuromorphic computing.A 784×300×10 artificial neural network(ANN)based on this optoelectronic synapse is constructed and demonstrated with a high recognition accuracy and good noise-tolerance for the Fashion-MNIST dataset.These extraordinary features endow this phototransistor with the potential for constructing advanced SB-UV detectors and intelligent hardware.
基金supported by the National Natural Science Foundation of China(Grant Nos.11904041 and 12104077)the Natural Science Foundation of Chongqing(Grant Nos.cstc2020jcyj-msxmX0557,cstc2019jcyj-msxmX0237,cstc2020jcyj-msxmX0533,and CSTB2022BSXM-JCX0090)+1 种基金the Science and Technology Research Project of Chongqing Education Committee(Grant Nos.KJQN202100540,KJQN202000511,and KJQN202100501)the College Students Innovation and Entrepreneurship Training Program of Chongqing City(Grant No.S202210637052)。
文摘Solar-blind imaging has attracted considerable interest in both military and civilian applications,spurring the development of high-performance deep-ultraviolet photodetector arrays(PDAs) with wide-bandgap semiconductor materials.Herein,we present a novel method to enhance the performance of solar-blind PDAs(SBPDs) using β-Ga_(2)O_(3) films obtained by the phase transition of heterogeneous epitaxial sub-stable ε-Ga_(2)O_(3),achieved through high-temperature rapid annealing.Metal-semiconductor-metaltype SBPDs based on phase-transformed β-Ga_(2)O_(3) films exhibited superior performance,including an ultrahigh responsivity of 459.38 A/W,detectivity of 10^(14)–10^(15) Jones,external quantum efficiency of 10^(4)%–10^(5)%,rejection ratio(R_(254)/R_(365)) of 10^(5)–10^(6),photo-to-dark current ratio of 10^(4)–10^(6),fast response speed of 1.01 s/0.06 s,and favorable stability.Notably,the ultrahigh responsivity of β-Ga_(2)O_(3)-film-based devices was approximately 222-fold higher than that of ε-Ga_(2)O_(3) film-based devices.The assembled 4×5 β-Ga_(2)O_(3) film-based PDAs exhibited favorable uniformity,repeatability,and high spatial resolution for solarblind imaging.Our study offers a promising approach for the development of high-performance β-Ga_(2)O_(3)-based PDAs for solarblind ultraviolet imaging with potential applications in both military and civilian fields.
