Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ra...Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.展开更多
We report a passive mode-locked fiber laser that can realize single-wavelength tuning and multi-wavelength spacing tuning simultaneously.The tuning range is from 1528 nm–1560 nm,and up to three bands of soliton state...We report a passive mode-locked fiber laser that can realize single-wavelength tuning and multi-wavelength spacing tuning simultaneously.The tuning range is from 1528 nm–1560 nm,and up to three bands of soliton states can be output at the same time.These results are confirmed by a nonlinear Schrodinger equation model based on the split-step Fourier method.In addition,we reveal a way to transform the multi-wavelength soliton state into the Q-switched mode-locked state,which is period doubling.These results will promote the development of optical communication,optical sensing and multi-signal pulse emission.展开更多
Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/...Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.展开更多
Broadcasting gateway equipment generally uses a method of simply switching to a spare input stream when a failure occurs in a main input stream.However,when the transmission environment is unstable,problems such as re...Broadcasting gateway equipment generally uses a method of simply switching to a spare input stream when a failure occurs in a main input stream.However,when the transmission environment is unstable,problems such as reduction in the lifespan of equipment due to frequent switching and interruption,delay,and stoppage of services may occur.Therefore,applying a machine learning(ML)method,which is possible to automatically judge and classify network-related service anomaly,and switch multi-input signals without dropping or changing signals by predicting or quickly determining the time of error occurrence for smooth stream switching when there are problems such as transmission errors,is required.In this paper,we propose an intelligent packet switching method based on the ML method of classification,which is one of the supervised learning methods,that presents the risk level of abnormal multi-stream occurring in broadcasting gateway equipment based on data.Furthermore,we subdivide the risk levels obtained from classification techniques into probabilities and then derive vectorized representative values for each attribute value of the collected input data and continuously update them.The obtained reference vector value is used for switching judgment through the cosine similarity value between input data obtained when a dangerous situation occurs.In the broadcasting gateway equipment to which the proposed method is applied,it is possible to perform more stable and smarter switching than before by solving problems of reliability and broadcasting accidents of the equipment and can maintain stable video streaming as well.展开更多
Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimen...Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.展开更多
A novel multi-granularity flexible-grid switching optical-node architecture is proposed in this paper.In our system,the photonic lanterns are used as mode division multiplexing/demultiplexing(MD-Mux/MD-Demux)for selec...A novel multi-granularity flexible-grid switching optical-node architecture is proposed in this paper.In our system,the photonic lanterns are used as mode division multiplexing/demultiplexing(MD-Mux/MD-Demux)for selecting mode.The wavelength division multiplexer/demultiplexer(WDMux/WD-Demux)and the fiber bragg gratings(FBGs)are used to select wavelength channels with the various grid.The experimental results show that the transmission bandwidth covers the C+L band,the average transmission loss is-13.4 dB,and the average crosstalk is-30.5 dB.The optical-node architecture is suit for mode division multiplexing(MDM)optical communication system.展开更多
Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant applications.In this work,we constr...Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant applications.In this work,we construct a hydrogenated Au/SnO_(2)nanowire(NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum.We find that the Ion/Io ff ratio increases from 20 to 10^(4)when the read voltage decreases from 3.1 V to^(-1)V under the condition of electric field.Moreover,the rectification ratio can reach as high as 10^4owing to oxygen ion migration modulated by the electric field.The nanodevice also shows non-volatile resistive memory characteristic.The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO_(2)NW/Au device.Our results provide a strategy for designing high-performance memristive devices based on SnO_(2)NWs.展开更多
This paper is concerned with the cooperative target tracking of multiple autonomous surface vehicles(ASVs)under switching interaction topologies.For the target to be tracked,only its position can be measured/received ...This paper is concerned with the cooperative target tracking of multiple autonomous surface vehicles(ASVs)under switching interaction topologies.For the target to be tracked,only its position can be measured/received by some of the ASVs,and its velocity is unavailable to all the ASVs.A distributed extended state observer taking into consideration switching topologies is designed to integrally estimate unknown target dynamics and neighboring ASVs'dynamics.Accordingly,a novel kinematic controller is designed,which takes full advantage of known information and avoids the approximation of some virtual control vectors.Moreover,a disturbance observer is presented to estimate unknown time-varying environmental disturbance.Furthermore,a distributed dynamic controller is designed to regulate the involved ASVs to cooperatively track the target.It enables each ASV to adjust its forces and moments according to the received information from its neighbors.The effectiveness of the derived results is demonstrated through cooperative target tracking performance analysis for a tracking system composed of five interacting ASVs.展开更多
With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of...With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of data generated from the devices challenges the AIoT systems from information collection,storage,processing and communication.In the review,we introduce volatile threshold switching memristors,which can be roughly classified into three types:metallic conductive filament-based TS devices,amorphous chalcogenide-based ovonic threshold switching devices,and metal-insulator transition based TS devices.They play important roles in high-density storage,energy efficient computing and hardware security for AIoT systems.Firstly,a brief introduction is exhibited to describe the categories(materials and characteristics)of volatile TS devices.And then,switching mechanisms of the three types of TS devices are discussed and systematically summarized.After that,attention is focused on the applications in 3D cross-point memory technology with high storage-density,efficient neuromorphic computing,hardware security(true random number generators and physical unclonable functions),and others(steep subthreshold slope transistor,logic devices,etc.).Finally,the major challenges and future outlook of volatile threshold switching memristors are presented.展开更多
Colorless‐to‐black switching has attracted widespread attention for smart windows and multifunctional displays because they are more useful to control solar energy.However,it still remains a challenge owing to the t...Colorless‐to‐black switching has attracted widespread attention for smart windows and multifunctional displays because they are more useful to control solar energy.However,it still remains a challenge owing to the tremendous difficulties in the design of completely reverse absorptions in transmissive and colored states.Herein,we report on an electrochemical device that can switch between colorless and black by using the electrochemical process of hybrid organic–inorganic perovskite MAPbBr_(3),which shows a high integrated contrast ratio of up to 73%from 400 to 800 nm.The perovskite solution can be used as the active layer to assemble the device,showing superior transmittance over the entire visible region in neutral states.By applying an appropriate voltage,the device undergoes reversible switching between colorless and black,which is attributed to the formation of lead and Br_(2)in the redox reaction induced by the electron transfer process in MAPbBr_(3).In addition,the contrast ratio can be modulated over the entire visible region by changing the concentration and the applied voltage.These results contribute toward gaining an insightful understanding of the electrochemical process of perovskites and greatly promoting the development of switchable devices.展开更多
Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a no...Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.展开更多
This paper considers the mean square output containment control problem for heterogeneous multi-agent systems(MASs)with randomly switching topologies and nonuniform distributed delays.By modeling the switching topolog...This paper considers the mean square output containment control problem for heterogeneous multi-agent systems(MASs)with randomly switching topologies and nonuniform distributed delays.By modeling the switching topologies as a continuous-time Markov process and taking the distributed delays into consideration,a novel distributed containment observer is proposed to estimate the convex hull spanned by the leaders'states.A novel distributed output feedback containment controller is then designed without using the prior knowledge of distributed delays.By constructing a novel switching Lyapunov functional,the output containment control problem is then solved in the sense of mean square under an easily-verifiable sufficient condition.Finally,two numerical examples are given to show the effectiveness of the proposed controller.展开更多
In the engineering field,switching systems have been extensively studied,where sudden changes of parameter value and structural form have a significant impact on the operational performance of the system.Therefore,it ...In the engineering field,switching systems have been extensively studied,where sudden changes of parameter value and structural form have a significant impact on the operational performance of the system.Therefore,it is important to predict the behavior of the switching system,which includes the accurate detection of mutation points and rapid reidentification of the model.However,few efforts have been contributed to accurately locating the mutation points.In this paper,we propose a new measure of mutation detection—the threshold-based switching index by analogy with the Lyapunov exponent.We give the algorithm for selecting the optimal threshold,which greatly reduces the additional data collection and the relative error of mutation detection.In the system identification part,considering the small data amount available and noise in the data,the abrupt sparse Bayesian regression(abrupt-SBR)method is proposed.This method captures the model changes by updating the previously identified model,which requires less data and is more robust to noise than identifying the new model from scratch.With two representative dynamical systems,we illustrate the application and effectiveness of the proposed methods.Our research contributes to the accurate prediction and possible control of switching system behavior.展开更多
In this paper, by constructing a coupling equation, we establish the Harnack type inequalities for stochastic differential equations driven by fractional Brownian motion with Markovian switching. The Hurst parameter H...In this paper, by constructing a coupling equation, we establish the Harnack type inequalities for stochastic differential equations driven by fractional Brownian motion with Markovian switching. The Hurst parameter H is supposed to be in(1/2, 1). As a direct application, the strong Feller property is presented.展开更多
To meet the ever-increasing traffic demand and enhance the coverage of cellular networks,network densification is one of the crucial paradigms of 5G and beyond mobile networks,which can improve system capacity by depl...To meet the ever-increasing traffic demand and enhance the coverage of cellular networks,network densification is one of the crucial paradigms of 5G and beyond mobile networks,which can improve system capacity by deploying a large number of Access Points(APs)in the service area.However,since the energy consumption of APs generally accounts for a substantial part of the communication system,how to deal with the consequent energy issue is a challenging task for a mobile network with densely deployed APs.In this paper,we propose an intelligent AP switching on/off scheme to reduce the system energy consumption with the prerequisite of guaranteeing the quality of service,where the signaling overhead is also taken into consideration to ensure the stability of the network.First,based on historical traffic data,a long short-term memory method is introduced to predict the future traffic distribution,by which we can roughly determine when the AP switching operation should be triggered;second,we present an efficient three-step AP selection strategy to determine which of the APs would be switched on or off;third,an AP switching scheme with a threshold is proposed to adjust the switching frequency so as to improve the stability of the system.Experiment results indicate that our proposed traffic forecasting method performs well in practical scenarios,where the normalized root mean square error is within 10%.Furthermore,the achieved energy-saving is more than 28% on average with a reasonable outage probability and switching frequency for an area served by 40 APs in a commercial mobile network.展开更多
Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The ma...Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.展开更多
A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations....A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.展开更多
The realization of reversible thermal conductivity through ferromagnetic ordering can improve the heat management and energy efficiency in magnetic materials-based devices.VI_(3),as a new layered ferromagnetic semicon...The realization of reversible thermal conductivity through ferromagnetic ordering can improve the heat management and energy efficiency in magnetic materials-based devices.VI_(3),as a new layered ferromagnetic semiconductor,exhibits a structural phase transition from monoclinic(C2/m)to rhombohedral(R3^(-))phase as temperature decreases,making it a suitable platform to investigate thermal switching in magnetic phase transition materials.This work reveals that the thermal switching ratio of VI_(3)can reach 3.9 along the a-axis.Mechanical properties analysis indicates that the C2/m structure is stiffer than the R^(-)one,causing the larger phonon velocity in C2/m phase.Moreover,due to the fewer phonon branches in C2/m phase,the number of phonon–phonon scattering channels in C2/m phase is smaller compared to that of R^(-)phase.Both the larger phonon velocity and the longer phonon lifetime lead to larger lattice thermal conductivity in C2/m phase.This study uncovers the mechanical and thermal properties of VI_(3),which provides useful guides for designing magnetic materials-based devices such as thermal switch.展开更多
The Joule-Thomson effect is one of the important thermodynamic properties in the system relevant to gas switching reforming with carbon capture and storage(CCS). In this work, a set of apparatus was set up to determin...The Joule-Thomson effect is one of the important thermodynamic properties in the system relevant to gas switching reforming with carbon capture and storage(CCS). In this work, a set of apparatus was set up to determine the Joule-Thomson effect of binary mixtures(CO_(2)+ H_(2)). The accuracy of the apparatus was verified by comparing with the experimental data of carbon dioxide. The Joule-Thomson coefficients(μ_(JT)) for(CO_(2)+ H_(2)) binary mixtures with mole fractions of carbon dioxide(x_(CO_(2))= 0.1, 0.26, 0.5,0.86, 0.94) along six isotherms at various pressures were measured. Five equations of state EOSs(PR,SRK, PR, BWR and GERG-2008 equation) were used to calculate the μ_(JT)for both pure systems and binary systems, among which the GERG-2008 predicted best with a wide range of pressure and temperature.Moreover, the Joule-Thomson inversion curves(JTIC) were calculated with five equations of state. A comparison was made between experimental data and predicted data for the inversion curve of CO_(2). The investigated EOSs show a similar prediction of the low-temperature branch of the JTIC for both pure and binary systems, except for the BWRS equation of state. Among all the equations, SRK has the most similar result to GERG-2008 for predicting JTIC.展开更多
Current induced spin-orbit torque(SOT)switching of magnetization is a promising technology for nonvolatile spintronic memory and logic applications.In this work,we systematically investigated the effect of Ta thicknes...Current induced spin-orbit torque(SOT)switching of magnetization is a promising technology for nonvolatile spintronic memory and logic applications.In this work,we systematically investigated the effect of Ta thickness on the magnetic properties,field-free switching and SOT efficiency in a ferromagnetically coupled Co/Ta/Co Fe B trilayer with perpendicular magnetic anisotropy.We found that both the anisotropy field and coercivity increase with increasing Ta thickness from0.15 nm to 0.4 nm.With further increase of Ta thickness to 0.5 nm,two-step switching is observed,indicating that the two magnetic layers are magnetically decoupled.Measurements of pulse-current induced magnetization switching and harmonic Hall voltages show that the critical switching current density increases while the field-free switching ratio and SOT efficiency decrease with increasing Ta thickness.Both the enhanced spin memory loss and reduced interlayer exchange coupling might be responsible for theβ_(DL)decrease as the Ta spacer thickness increases.The studied structure with the incorporation of a Co Fe B layer is able to realize field-free switching in the strong ferromagnetic coupling region,which may contribute to the further development of magnetic tunnel junctions for better memory applications.展开更多
基金financially supported by the National Natural Science Foundation of China (Grant No.51802025)the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No.2020JQ-384)。
文摘Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.
基金supported by the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR20A050001)the National Natural Science Foundation of China(Grant Nos.12261131495 and 12275240)the Scientific Research and De-veloped Fund of Zhejiang A&F University(Grant No.2021FR0009).
文摘We report a passive mode-locked fiber laser that can realize single-wavelength tuning and multi-wavelength spacing tuning simultaneously.The tuning range is from 1528 nm–1560 nm,and up to three bands of soliton states can be output at the same time.These results are confirmed by a nonlinear Schrodinger equation model based on the split-step Fourier method.In addition,we reveal a way to transform the multi-wavelength soliton state into the Q-switched mode-locked state,which is period doubling.These results will promote the development of optical communication,optical sensing and multi-signal pulse emission.
基金Project supported by the National Natural Science Foundation of China (Grant No.12274108)the Natural Science Foundation of Zhejiang Province,China (Grant Nos.LY23A040008 and LY23A040008)the Basic Scientific Research Project of Wenzhou,China (Grant No.G20220025)。
文摘Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.
基金This work was supported by a research grant from Seoul Women’s University(2023-0183).
文摘Broadcasting gateway equipment generally uses a method of simply switching to a spare input stream when a failure occurs in a main input stream.However,when the transmission environment is unstable,problems such as reduction in the lifespan of equipment due to frequent switching and interruption,delay,and stoppage of services may occur.Therefore,applying a machine learning(ML)method,which is possible to automatically judge and classify network-related service anomaly,and switch multi-input signals without dropping or changing signals by predicting or quickly determining the time of error occurrence for smooth stream switching when there are problems such as transmission errors,is required.In this paper,we propose an intelligent packet switching method based on the ML method of classification,which is one of the supervised learning methods,that presents the risk level of abnormal multi-stream occurring in broadcasting gateway equipment based on data.Furthermore,we subdivide the risk levels obtained from classification techniques into probabilities and then derive vectorized representative values for each attribute value of the collected input data and continuously update them.The obtained reference vector value is used for switching judgment through the cosine similarity value between input data obtained when a dangerous situation occurs.In the broadcasting gateway equipment to which the proposed method is applied,it is possible to perform more stable and smarter switching than before by solving problems of reliability and broadcasting accidents of the equipment and can maintain stable video streaming as well.
基金M.Zhu acknowledges support by the National Outstanding Youth Program(62322411)the Hundred Talents Program(Chinese Academy of Sciences)+1 种基金the Shanghai Rising-Star Program(21QA1410800)The financial support was provided by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB44010200).
文摘Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.
文摘A novel multi-granularity flexible-grid switching optical-node architecture is proposed in this paper.In our system,the photonic lanterns are used as mode division multiplexing/demultiplexing(MD-Mux/MD-Demux)for selecting mode.The wavelength division multiplexer/demultiplexer(WDMux/WD-Demux)and the fiber bragg gratings(FBGs)are used to select wavelength channels with the various grid.The experimental results show that the transmission bandwidth covers the C+L band,the average transmission loss is-13.4 dB,and the average crosstalk is-30.5 dB.The optical-node architecture is suit for mode division multiplexing(MDM)optical communication system.
基金Chenzhou Science and Technology Plan Project of China(Grant No.ZDYF2020159)Scientific Research Project of Hunan Provincial Department of Education(Grant No.21C0708)。
文摘Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant applications.In this work,we construct a hydrogenated Au/SnO_(2)nanowire(NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum.We find that the Ion/Io ff ratio increases from 20 to 10^(4)when the read voltage decreases from 3.1 V to^(-1)V under the condition of electric field.Moreover,the rectification ratio can reach as high as 10^4owing to oxygen ion migration modulated by the electric field.The nanodevice also shows non-volatile resistive memory characteristic.The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO_(2)NW/Au device.Our results provide a strategy for designing high-performance memristive devices based on SnO_(2)NWs.
基金supported in part by the National Science Foundation of China(61873335,61833011)the Project of Scie nce and Technology Commission of Shanghai Municipality,China(20ZR1420200,21SQBS01600,19510750300,21190780300)。
文摘This paper is concerned with the cooperative target tracking of multiple autonomous surface vehicles(ASVs)under switching interaction topologies.For the target to be tracked,only its position can be measured/received by some of the ASVs,and its velocity is unavailable to all the ASVs.A distributed extended state observer taking into consideration switching topologies is designed to integrally estimate unknown target dynamics and neighboring ASVs'dynamics.Accordingly,a novel kinematic controller is designed,which takes full advantage of known information and avoids the approximation of some virtual control vectors.Moreover,a disturbance observer is presented to estimate unknown time-varying environmental disturbance.Furthermore,a distributed dynamic controller is designed to regulate the involved ASVs to cooperatively track the target.It enables each ASV to adjust its forces and moments according to the received information from its neighbors.The effectiveness of the derived results is demonstrated through cooperative target tracking performance analysis for a tracking system composed of five interacting ASVs.
基金supported by the STI 2030—Major Projects(Grant No.2021ZD0201201)National Natural Science Foundation of China(Grant No.92064012)Hubei Province Postdoctoral Innovation Research Program(Grant No.0106182103)。
文摘With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of data generated from the devices challenges the AIoT systems from information collection,storage,processing and communication.In the review,we introduce volatile threshold switching memristors,which can be roughly classified into three types:metallic conductive filament-based TS devices,amorphous chalcogenide-based ovonic threshold switching devices,and metal-insulator transition based TS devices.They play important roles in high-density storage,energy efficient computing and hardware security for AIoT systems.Firstly,a brief introduction is exhibited to describe the categories(materials and characteristics)of volatile TS devices.And then,switching mechanisms of the three types of TS devices are discussed and systematically summarized.After that,attention is focused on the applications in 3D cross-point memory technology with high storage-density,efficient neuromorphic computing,hardware security(true random number generators and physical unclonable functions),and others(steep subthreshold slope transistor,logic devices,etc.).Finally,the major challenges and future outlook of volatile threshold switching memristors are presented.
基金Natural Science Foundation of Hebei Province(China),Grant/Award Numbers:B2020203013,B2021203016Science and Technology Project of Hebei Education Department(China),Grant/Award Number:QN2020137+3 种基金Cultivation Project for Basic Research Innovation of Yanshan University(China),Grant/Award Number:2021LGZD015Subsidy for Hebei Key Laboratory of Applied Chemistry after Operation Performance(China),Grant/Award Number:22567616HNatural Science Foundation of Heilongjiang Province(China),Grant/Award Number:LH2022B025Fundamental Research Funds for the Provincial Universities of Heilongjiang Province(China),Grant/Award Number:KYYWF10236190104。
文摘Colorless‐to‐black switching has attracted widespread attention for smart windows and multifunctional displays because they are more useful to control solar energy.However,it still remains a challenge owing to the tremendous difficulties in the design of completely reverse absorptions in transmissive and colored states.Herein,we report on an electrochemical device that can switch between colorless and black by using the electrochemical process of hybrid organic–inorganic perovskite MAPbBr_(3),which shows a high integrated contrast ratio of up to 73%from 400 to 800 nm.The perovskite solution can be used as the active layer to assemble the device,showing superior transmittance over the entire visible region in neutral states.By applying an appropriate voltage,the device undergoes reversible switching between colorless and black,which is attributed to the formation of lead and Br_(2)in the redox reaction induced by the electron transfer process in MAPbBr_(3).In addition,the contrast ratio can be modulated over the entire visible region by changing the concentration and the applied voltage.These results contribute toward gaining an insightful understanding of the electrochemical process of perovskites and greatly promoting the development of switchable devices.
基金Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403602)the National Natural Science Foundation of China (Grant Nos. 51971109, 52025012, and 52001169)。
文摘Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.
文摘This paper considers the mean square output containment control problem for heterogeneous multi-agent systems(MASs)with randomly switching topologies and nonuniform distributed delays.By modeling the switching topologies as a continuous-time Markov process and taking the distributed delays into consideration,a novel distributed containment observer is proposed to estimate the convex hull spanned by the leaders'states.A novel distributed output feedback containment controller is then designed without using the prior knowledge of distributed delays.By constructing a novel switching Lyapunov functional,the output containment control problem is then solved in the sense of mean square under an easily-verifiable sufficient condition.Finally,two numerical examples are given to show the effectiveness of the proposed controller.
基金the National Natural Science Foundation of China(Grant No.12072261)。
文摘In the engineering field,switching systems have been extensively studied,where sudden changes of parameter value and structural form have a significant impact on the operational performance of the system.Therefore,it is important to predict the behavior of the switching system,which includes the accurate detection of mutation points and rapid reidentification of the model.However,few efforts have been contributed to accurately locating the mutation points.In this paper,we propose a new measure of mutation detection—the threshold-based switching index by analogy with the Lyapunov exponent.We give the algorithm for selecting the optimal threshold,which greatly reduces the additional data collection and the relative error of mutation detection.In the system identification part,considering the small data amount available and noise in the data,the abrupt sparse Bayesian regression(abrupt-SBR)method is proposed.This method captures the model changes by updating the previously identified model,which requires less data and is more robust to noise than identifying the new model from scratch.With two representative dynamical systems,we illustrate the application and effectiveness of the proposed methods.Our research contributes to the accurate prediction and possible control of switching system behavior.
基金The research of L.Yan was partially supported bythe National Natural Science Foundation of China (11971101)The research of Z.Chen was supported by National Natural Science Foundation of China (11971432)+3 种基金the Natural Science Foundation of Zhejiang Province (LY21G010003)supported by the Collaborative Innovation Center of Statistical Data Engineering Technology & Applicationthe Characteristic & Preponderant Discipline of Key Construction Universities in Zhejiang Province (Zhejiang Gongshang University-Statistics)the First Class Discipline of Zhejiang-A (Zhejiang Gongshang University-Statistics)。
文摘In this paper, by constructing a coupling equation, we establish the Harnack type inequalities for stochastic differential equations driven by fractional Brownian motion with Markovian switching. The Hurst parameter H is supposed to be in(1/2, 1). As a direct application, the strong Feller property is presented.
基金partially supported by the National Natural Science Foundation of China under Grants 61801208,61931023,and U1936202.
文摘To meet the ever-increasing traffic demand and enhance the coverage of cellular networks,network densification is one of the crucial paradigms of 5G and beyond mobile networks,which can improve system capacity by deploying a large number of Access Points(APs)in the service area.However,since the energy consumption of APs generally accounts for a substantial part of the communication system,how to deal with the consequent energy issue is a challenging task for a mobile network with densely deployed APs.In this paper,we propose an intelligent AP switching on/off scheme to reduce the system energy consumption with the prerequisite of guaranteeing the quality of service,where the signaling overhead is also taken into consideration to ensure the stability of the network.First,based on historical traffic data,a long short-term memory method is introduced to predict the future traffic distribution,by which we can roughly determine when the AP switching operation should be triggered;second,we present an efficient three-step AP selection strategy to determine which of the APs would be switched on or off;third,an AP switching scheme with a threshold is proposed to adjust the switching frequency so as to improve the stability of the system.Experiment results indicate that our proposed traffic forecasting method performs well in practical scenarios,where the normalized root mean square error is within 10%.Furthermore,the achieved energy-saving is more than 28% on average with a reasonable outage probability and switching frequency for an area served by 40 APs in a commercial mobile network.
基金the Tencent Foundation through the XPLORER PRIZEthe National Key Research and Development Program of China(Grant Nos.2018YFB0407602 and 2021YFB3601303)the National Natural Science Foundation of China(Grant Nos.61627813,11904017,92164206,and 61571023)。
文摘Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.
基金the National Natural Science Foundation of China (Grant Nos. 61774052 and 61904045)the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814)the Natural Science Foundation of Jiangxi Province, China (Grant No. 20212BAB214047)。
文摘A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.
基金the National Natural Science Foundation of China(Grant No.52206092)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20210565)+4 种基金funded by Department of Science and Technology of Jiangsu Province,China(Grant No.BK20220032)Basic Science(Natural Science)Research Project of Higher Education Institutions of Jiangsu Province,China(Grant No.21KJB470009)Nanjing Science and Technology Innovation Project for Overseas Studentsfunded by“Shuangchuang”Doctor Program of Jiangsu Province,China(Grant No.JSSCBS20210315)open research fund of Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments,Southeast University(Grant No.KF202010)。
文摘The realization of reversible thermal conductivity through ferromagnetic ordering can improve the heat management and energy efficiency in magnetic materials-based devices.VI_(3),as a new layered ferromagnetic semiconductor,exhibits a structural phase transition from monoclinic(C2/m)to rhombohedral(R3^(-))phase as temperature decreases,making it a suitable platform to investigate thermal switching in magnetic phase transition materials.This work reveals that the thermal switching ratio of VI_(3)can reach 3.9 along the a-axis.Mechanical properties analysis indicates that the C2/m structure is stiffer than the R^(-)one,causing the larger phonon velocity in C2/m phase.Moreover,due to the fewer phonon branches in C2/m phase,the number of phonon–phonon scattering channels in C2/m phase is smaller compared to that of R^(-)phase.Both the larger phonon velocity and the longer phonon lifetime lead to larger lattice thermal conductivity in C2/m phase.This study uncovers the mechanical and thermal properties of VI_(3),which provides useful guides for designing magnetic materials-based devices such as thermal switch.
基金supported by the National Natural Science Foundation of China (21878056)Key Laboratory of Petrochemical Resource Processing and Process Intensification Technology (2019Z002)。
文摘The Joule-Thomson effect is one of the important thermodynamic properties in the system relevant to gas switching reforming with carbon capture and storage(CCS). In this work, a set of apparatus was set up to determine the Joule-Thomson effect of binary mixtures(CO_(2)+ H_(2)). The accuracy of the apparatus was verified by comparing with the experimental data of carbon dioxide. The Joule-Thomson coefficients(μ_(JT)) for(CO_(2)+ H_(2)) binary mixtures with mole fractions of carbon dioxide(x_(CO_(2))= 0.1, 0.26, 0.5,0.86, 0.94) along six isotherms at various pressures were measured. Five equations of state EOSs(PR,SRK, PR, BWR and GERG-2008 equation) were used to calculate the μ_(JT)for both pure systems and binary systems, among which the GERG-2008 predicted best with a wide range of pressure and temperature.Moreover, the Joule-Thomson inversion curves(JTIC) were calculated with five equations of state. A comparison was made between experimental data and predicted data for the inversion curve of CO_(2). The investigated EOSs show a similar prediction of the low-temperature branch of the JTIC for both pure and binary systems, except for the BWRS equation of state. Among all the equations, SRK has the most similar result to GERG-2008 for predicting JTIC.
基金Project supported by the‘Pioneer’and‘Leading Goose’Research and Development Program of Zhejiang Province,China(Grant No.2022C01053)the National Natural Science Foundation of China(Grant Nos.11874135,12104119+2 种基金12004090)Key Research and Development Program of Zhejiang Province,China(Grant No.2021C01039)Natural Science Foundation of Zhejiang Province,China(Grant Nos.LQ20F040005 and LQ21A050001)。
文摘Current induced spin-orbit torque(SOT)switching of magnetization is a promising technology for nonvolatile spintronic memory and logic applications.In this work,we systematically investigated the effect of Ta thickness on the magnetic properties,field-free switching and SOT efficiency in a ferromagnetically coupled Co/Ta/Co Fe B trilayer with perpendicular magnetic anisotropy.We found that both the anisotropy field and coercivity increase with increasing Ta thickness from0.15 nm to 0.4 nm.With further increase of Ta thickness to 0.5 nm,two-step switching is observed,indicating that the two magnetic layers are magnetically decoupled.Measurements of pulse-current induced magnetization switching and harmonic Hall voltages show that the critical switching current density increases while the field-free switching ratio and SOT efficiency decrease with increasing Ta thickness.Both the enhanced spin memory loss and reduced interlayer exchange coupling might be responsible for theβ_(DL)decrease as the Ta spacer thickness increases.The studied structure with the incorporation of a Co Fe B layer is able to realize field-free switching in the strong ferromagnetic coupling region,which may contribute to the further development of magnetic tunnel junctions for better memory applications.
