期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna 被引量:1
1
作者 李想 孙建东 +2 位作者 张志鹏 V V Popov 秦华 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第6期539-542,共4页
Efficient coupling of terahertz electromagnetic wave with the active region in a terahertz detector is required to enhance the optical sensitivity. In this work, we demonstrate direct integration of a field-effect-tra... Efficient coupling of terahertz electromagnetic wave with the active region in a terahertz detector is required to enhance the optical sensitivity. In this work, we demonstrate direct integration of a field-effect-transistor(FET) terahertz detector chip at the waveguide port of a horn antenna. Although the integration without a proper backshot is rather preliminary, the noise-equivalent power is greatly reduced from 2.7 nW/Hz^(1/2) for the bare detector chip to 76 pW/Hz^(1/2) at340 GHz. The enhancement factor of about 30 is confirmed by simulations revealing the effective increase in the energy flux density seen by the detector. The simulation further confirms the frequency response of the horn antenna and the onchip antennas. A design with the detector chip fully embedded within a waveguide cavity could be made to further enhance the coupling efficiency. 展开更多
关键词 terahertz detector high electron mobility transistor diagonal horn
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部