We introduce a novel method to create mid-infrared(MIR)thermal emitters using fully epitaxial,metal-free structures.Through the strategic use of epsilon-near-zero(ENZ)thin films in InAs layers,we achieve a narrow-band...We introduce a novel method to create mid-infrared(MIR)thermal emitters using fully epitaxial,metal-free structures.Through the strategic use of epsilon-near-zero(ENZ)thin films in InAs layers,we achieve a narrow-band,wide-angle,and p-polarized thermal emission spectra.This approach,employing molecular beam epitaxy,circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths.Our findings contribute a promising route towards simpler,more efficient MIR optoelectronic devices.展开更多
Controlling the emissivity of a thermal emitter has attracted growing interest,with a view toward a new generation of thermal emission devices.To date,all demonstrations have involved using sustained external electric...Controlling the emissivity of a thermal emitter has attracted growing interest,with a view toward a new generation of thermal emission devices.To date,all demonstrations have involved using sustained external electric or thermal consumption to maintain a desired emissivity.In the present study,we demonstrated control over the emissivity of a thermal emitter consisting of a film of phase-changing material Ge2Sb2Te5(GST)on top of a metal film.This thermal emitter achieves broad wavelength-selective spectral emissivity in the mid-infrared.The peak emissivity approaches the ideal blackbody maximum,and a maximum extinction ratio of 410 dB is attainable by switching the GST between the crystalline and amorphous phases.By controlling the intermediate phases,the emissivity can be continuously tuned.This switchable,tunable,wavelength-selective and thermally stable thermal emitter will pave the way toward the ultimate control of thermal emissivity in the field of fundamental science as well as for energy harvesting and thermal control applications,including thermophotovoltaics,light sources,infrared imaging and radiative coolers.展开更多
Passive daytime radiative cooling(PDRC) is environment-friendly without energy input by enhancing the coating's solar reflectance(R_(solar)) and thermal emittance(ε_(LWIR)) in the atmosphere's long-wave infra...Passive daytime radiative cooling(PDRC) is environment-friendly without energy input by enhancing the coating's solar reflectance(R_(solar)) and thermal emittance(ε_(LWIR)) in the atmosphere's long-wave infrared transmission window.However,high R_(solar) is usually achieved by increasing the coating's thickness,which not only increases materials' cost but also impairs heat transfer.Additionally,the desired high R_(solar) is vulnerable to dust pollution in the outdoors.In this work,a thin paint was designed by mixing hBN plates,PFOTS,and IPA. R_(solar)=0.963 and ε_(LWIR)=0.927 was achieved at a thickness of 150 μm due to the high backscattering ability of scatters.A high through-plane thermal conductivity(~1.82 W m^(-1) K^(-1)) also can be obtained.In addition,the porous structure coupled with the binder PFOTS resulted in a contact angle of 154°,demonstrating excellent durability under dust contamination.Outdoor experiments showed that the thin paint can obtain a 2.3℃ lower temperature for sub-ambient cooling than the reference PDRC coating in the daytime.Furtherly,the above-ambient heat dissipation performance can be enhanced by spraying the thin paint on a 3D heat sink,which was 15.7℃ lower than the reference 1D structure,demonstrating excellent performance for durable and scalable PDRC applications.展开更多
The thermal emittance of Cr film, as an IR reflector, was investigated for the use in SSAC. The Cr thin films with different thicknesses were deposited on silicon wafers, optical quartz and stainless steel substrates ...The thermal emittance of Cr film, as an IR reflector, was investigated for the use in SSAC. The Cr thin films with different thicknesses were deposited on silicon wafers, optical quartz and stainless steel substrates by cathodic arc ion plating technology as a metallic IR reflector layer in SSAC. The thickness of Cr thin films was optimized to achieve the minimum thermal emittance. The effects of structural, microstructural, optical, surface and cross-sectional morphological properties of Cr thin films were investigated on the emittance. An optimal thickness about 450 nm of the Cr thin film for the lowest total thermal emittance of 0.05 was obtained. The experimental results suggested that the Cr metallic thin film with optimal thickness could be used as an effective infrared reflector for the development of SSAC structure.展开更多
We report a complementary metal oxide semiconductor(CMOS)compatible metamaterial-based spectrally selective absorber/emitter(MBSSAE)for infrared(IR)stealth,which has the low absorption/emissivity in the IR atmospheric...We report a complementary metal oxide semiconductor(CMOS)compatible metamaterial-based spectrally selective absorber/emitter(MBSSAE)for infrared(IR)stealth,which has the low absorption/emissivity in the IR atmospheric transmission window(3μm-5μm,8μm-14μm)and ultra-high and broadband absorption/emissivity in the IR non-atmospheric window(5μm-8μm).We propose a novel method for the broadband absorption/emissivity in 5μm-8μm with incorporation of an epsilon-near-zero(ENZ)material between the top patterned aluminum(Al)disks layer and the silicon oxide(SiO_(2))spacer layer.With an appropriate design,the peaks in the IR atmospheric transmission window can be suppressed while the peak intensity in the non-atmospheric window remains high.The optimized MBSSAE has an average absorption/emissivity less than 10%in 8μm-14μm and less than 6%in 3μm-5μm.And the average absorption/emissivity in 5μm-8μm is approximately over 64%.This proposed scheme may introduce the opportunities for the large-area and low-cost infrared stealth coating,as well as for the radiative cooling,spectral selective thermal detector,optical sensor,and thermophotovoltaic applications.展开更多
文摘We introduce a novel method to create mid-infrared(MIR)thermal emitters using fully epitaxial,metal-free structures.Through the strategic use of epsilon-near-zero(ENZ)thin films in InAs layers,we achieve a narrow-band,wide-angle,and p-polarized thermal emission spectra.This approach,employing molecular beam epitaxy,circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths.Our findings contribute a promising route towards simpler,more efficient MIR optoelectronic devices.
基金supported by the National Natural Science Foundation of China(grant nos 61425023,61575177,61275030 and 61235007).
文摘Controlling the emissivity of a thermal emitter has attracted growing interest,with a view toward a new generation of thermal emission devices.To date,all demonstrations have involved using sustained external electric or thermal consumption to maintain a desired emissivity.In the present study,we demonstrated control over the emissivity of a thermal emitter consisting of a film of phase-changing material Ge2Sb2Te5(GST)on top of a metal film.This thermal emitter achieves broad wavelength-selective spectral emissivity in the mid-infrared.The peak emissivity approaches the ideal blackbody maximum,and a maximum extinction ratio of 410 dB is attainable by switching the GST between the crystalline and amorphous phases.By controlling the intermediate phases,the emissivity can be continuously tuned.This switchable,tunable,wavelength-selective and thermally stable thermal emitter will pave the way toward the ultimate control of thermal emissivity in the field of fundamental science as well as for energy harvesting and thermal control applications,including thermophotovoltaics,light sources,infrared imaging and radiative coolers.
基金financially supported by the Natural Science Foundation of Hunan Province(Grant No.2021JJ40732)the Central South University Innovation-Driven Research Programme(Grant No.2023CXQD012)。
文摘Passive daytime radiative cooling(PDRC) is environment-friendly without energy input by enhancing the coating's solar reflectance(R_(solar)) and thermal emittance(ε_(LWIR)) in the atmosphere's long-wave infrared transmission window.However,high R_(solar) is usually achieved by increasing the coating's thickness,which not only increases materials' cost but also impairs heat transfer.Additionally,the desired high R_(solar) is vulnerable to dust pollution in the outdoors.In this work,a thin paint was designed by mixing hBN plates,PFOTS,and IPA. R_(solar)=0.963 and ε_(LWIR)=0.927 was achieved at a thickness of 150 μm due to the high backscattering ability of scatters.A high through-plane thermal conductivity(~1.82 W m^(-1) K^(-1)) also can be obtained.In addition,the porous structure coupled with the binder PFOTS resulted in a contact angle of 154°,demonstrating excellent durability under dust contamination.Outdoor experiments showed that the thin paint can obtain a 2.3℃ lower temperature for sub-ambient cooling than the reference PDRC coating in the daytime.Furtherly,the above-ambient heat dissipation performance can be enhanced by spraying the thin paint on a 3D heat sink,which was 15.7℃ lower than the reference 1D structure,demonstrating excellent performance for durable and scalable PDRC applications.
基金Funded by the National Natural Science Foundation of China(No.51402208)the Project by State Key Laboratory of Advanced Technology for Materials Synthesis and Processing(Wuhan University of Technology)(No.2016-KF-11)
文摘The thermal emittance of Cr film, as an IR reflector, was investigated for the use in SSAC. The Cr thin films with different thicknesses were deposited on silicon wafers, optical quartz and stainless steel substrates by cathodic arc ion plating technology as a metallic IR reflector layer in SSAC. The thickness of Cr thin films was optimized to achieve the minimum thermal emittance. The effects of structural, microstructural, optical, surface and cross-sectional morphological properties of Cr thin films were investigated on the emittance. An optimal thickness about 450 nm of the Cr thin film for the lowest total thermal emittance of 0.05 was obtained. The experimental results suggested that the Cr metallic thin film with optimal thickness could be used as an effective infrared reflector for the development of SSAC structure.
基金supported by the National Natural Science Foundation of China(Grant Nos.61734002,61435010,61177035,and 61421002).
文摘We report a complementary metal oxide semiconductor(CMOS)compatible metamaterial-based spectrally selective absorber/emitter(MBSSAE)for infrared(IR)stealth,which has the low absorption/emissivity in the IR atmospheric transmission window(3μm-5μm,8μm-14μm)and ultra-high and broadband absorption/emissivity in the IR non-atmospheric window(5μm-8μm).We propose a novel method for the broadband absorption/emissivity in 5μm-8μm with incorporation of an epsilon-near-zero(ENZ)material between the top patterned aluminum(Al)disks layer and the silicon oxide(SiO_(2))spacer layer.With an appropriate design,the peaks in the IR atmospheric transmission window can be suppressed while the peak intensity in the non-atmospheric window remains high.The optimized MBSSAE has an average absorption/emissivity less than 10%in 8μm-14μm and less than 6%in 3μm-5μm.And the average absorption/emissivity in 5μm-8μm is approximately over 64%.This proposed scheme may introduce the opportunities for the large-area and low-cost infrared stealth coating,as well as for the radiative cooling,spectral selective thermal detector,optical sensor,and thermophotovoltaic applications.
