With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconduct...With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconductor industries has been emerged. This study explores and addresses the experimental approach for composite materials with one of the major concerns of high capacitance, and low leakage, as well as ease of integration technology. The characteristics of Al<sub>2</sub>O<sub>3</sub> supported HfO<sub>2</sub> (AHO) thin films for a series of different Hf ratios with Al<sub>2</sub>O<sub>3</sub> dielectrics by atomic layer deposition demonstrated as a candidate material. A composite AHO films with the homogeneous compositions of Al and Hf atoms into the Al-Hf-O mixed oxide system could stabilize the polycrystalline structure with increasing of dielectric constant (k) and decreasing of leakage current density, as well as a higher breakdown voltage than HfO<sub>2</sub> film on its own. 70 nm thick AHO thin films with different composition of Al and Hf contents were prepared by atomic layer deposition technique on titanium nitride (TiN) and silicon dioxide (SiO<sub>2</sub>) coated Si substrates. Photolithography and metal lift-off technique were used for the device fabrication of the metal-insulator-metal (MIM) capacitor structures. AHO films on TiN/SiO<sub>2</sub>/Si were measured by semiconductor analyzer and source/ measure system with probe station in the voltage range from -5 to 5 V with a frequency range from 10 kHz to 1 MHz were used to conduct capacitance-voltage (C-V) measurements with low/medium frequency range and current-voltage (I-V) measurements. It was found that Au/AHO/TiN/SiO<sub>2</sub>/Si MIM capacitors demonstrate a capacitance density of 1.5 - 4.5 fF/μm<sup>2</sup> at 10 kHz, a loss tangent of 0.02 - 0.04 at 10 kHz, dielectric constant of 11.7 - 35.5 depending on the composition and a low leakage current of 1.7 × 10<sup>-9</sup> A/cm<sup>2</sup> at 0.5 MV/cm at room temperature. The acquired experimental results could show the possibility of compositional alloy thin films that could potentially replace or open new market for high-k challenges in semiconductor technology.展开更多
Ru O2·n H2O film was deposited on tantalum foils by electrodeposition and heat treatment using Ru Cl3·3H2O as precursor.Surface morphology, composition change and cyclic voltammetry from precursor to amorpho...Ru O2·n H2O film was deposited on tantalum foils by electrodeposition and heat treatment using Ru Cl3·3H2O as precursor.Surface morphology, composition change and cyclic voltammetry from precursor to amorphous and crystalline RuO2·n H2O films were studied by X-ray diffractometer, Fourier transformation infrared spectrometer, differential thermal analyzer, scanning electron microscope and electrochemical analyzer, respectively. The results show that the precursor was transformed gradually from amorphous to crystalline phase with temperature. When heat treated at 300 °C for 2h, RuO2·n H2O electrode surface gains mass of2.5 mg/cm2 with specific capacitance of 782 F/g. Besides, it is found that the specific capacitance of the film decreased by roughly20% with voltage scan rate increasing from 5 to 250 m V/s.展开更多
The Cl2-sensitive heteropolysiloxanes(HPS) film was formed on the interdigital capacitor based on silicon dioxide by means of sol-gel process and spin-on technique.Measurements of interdigital capacitance were perform...The Cl2-sensitive heteropolysiloxanes(HPS) film was formed on the interdigital capacitor based on silicon dioxide by means of sol-gel process and spin-on technique.Measurements of interdigital capacitance were performed at room temperature for frequencies 100 Hz,1 kHz and 10 kHz.It is shown that there is a linear relationship between the capacitance and the concentration of chlorine gas.Influences of the measurement frequency and film thickness of silicate on the sensitivity of the sensor to C12 gas were discussed.And organically modified N,N-diethylaminopropyl-trimethoxysilane (APMS) had a much higher sensitivity.展开更多
<span style="white-space:normal;">The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In...<span style="white-space:normal;">The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> films of MIM capacitors on glass was examined in the voltage range from <span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;">/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/μm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;">at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10</span><sup style="white-space:normal;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>8</sup><span style="white-space:normal;"> A/cm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 1 MV/cm (5 V) at room temperature. Au/Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;">/TiN/Si MIM capacitors demonstrate a capacitance density of 1.5 fF/μm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 100 kHz, a loss tangent ~0.007 at 100 kHz and a lower leakage current of 2.93 × 10</span><sup style="white-space:normal;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>10</sup><span style="white-space:normal;"> A/cm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 1 MV/cm (5 V) at room temperature. The obtained electrical properties could indicate a promising application of MIM Capacitors.</span>展开更多
文摘With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconductor industries has been emerged. This study explores and addresses the experimental approach for composite materials with one of the major concerns of high capacitance, and low leakage, as well as ease of integration technology. The characteristics of Al<sub>2</sub>O<sub>3</sub> supported HfO<sub>2</sub> (AHO) thin films for a series of different Hf ratios with Al<sub>2</sub>O<sub>3</sub> dielectrics by atomic layer deposition demonstrated as a candidate material. A composite AHO films with the homogeneous compositions of Al and Hf atoms into the Al-Hf-O mixed oxide system could stabilize the polycrystalline structure with increasing of dielectric constant (k) and decreasing of leakage current density, as well as a higher breakdown voltage than HfO<sub>2</sub> film on its own. 70 nm thick AHO thin films with different composition of Al and Hf contents were prepared by atomic layer deposition technique on titanium nitride (TiN) and silicon dioxide (SiO<sub>2</sub>) coated Si substrates. Photolithography and metal lift-off technique were used for the device fabrication of the metal-insulator-metal (MIM) capacitor structures. AHO films on TiN/SiO<sub>2</sub>/Si were measured by semiconductor analyzer and source/ measure system with probe station in the voltage range from -5 to 5 V with a frequency range from 10 kHz to 1 MHz were used to conduct capacitance-voltage (C-V) measurements with low/medium frequency range and current-voltage (I-V) measurements. It was found that Au/AHO/TiN/SiO<sub>2</sub>/Si MIM capacitors demonstrate a capacitance density of 1.5 - 4.5 fF/μm<sup>2</sup> at 10 kHz, a loss tangent of 0.02 - 0.04 at 10 kHz, dielectric constant of 11.7 - 35.5 depending on the composition and a low leakage current of 1.7 × 10<sup>-9</sup> A/cm<sup>2</sup> at 0.5 MV/cm at room temperature. The acquired experimental results could show the possibility of compositional alloy thin films that could potentially replace or open new market for high-k challenges in semiconductor technology.
基金Project(S2013040015492)supported by the Natural Science Foundation of Guangdong Province,ChinaProject(2007AA03Z240)supported by Hi-tech Research and Development Program of China
文摘Ru O2·n H2O film was deposited on tantalum foils by electrodeposition and heat treatment using Ru Cl3·3H2O as precursor.Surface morphology, composition change and cyclic voltammetry from precursor to amorphous and crystalline RuO2·n H2O films were studied by X-ray diffractometer, Fourier transformation infrared spectrometer, differential thermal analyzer, scanning electron microscope and electrochemical analyzer, respectively. The results show that the precursor was transformed gradually from amorphous to crystalline phase with temperature. When heat treated at 300 °C for 2h, RuO2·n H2O electrode surface gains mass of2.5 mg/cm2 with specific capacitance of 782 F/g. Besides, it is found that the specific capacitance of the film decreased by roughly20% with voltage scan rate increasing from 5 to 250 m V/s.
文摘The Cl2-sensitive heteropolysiloxanes(HPS) film was formed on the interdigital capacitor based on silicon dioxide by means of sol-gel process and spin-on technique.Measurements of interdigital capacitance were performed at room temperature for frequencies 100 Hz,1 kHz and 10 kHz.It is shown that there is a linear relationship between the capacitance and the concentration of chlorine gas.Influences of the measurement frequency and film thickness of silicate on the sensitivity of the sensor to C12 gas were discussed.And organically modified N,N-diethylaminopropyl-trimethoxysilane (APMS) had a much higher sensitivity.
文摘<span style="white-space:normal;">The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> films of MIM capacitors on glass was examined in the voltage range from <span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;">/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/μm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;">at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10</span><sup style="white-space:normal;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>8</sup><span style="white-space:normal;"> A/cm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 1 MV/cm (5 V) at room temperature. Au/Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;">/TiN/Si MIM capacitors demonstrate a capacitance density of 1.5 fF/μm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 100 kHz, a loss tangent ~0.007 at 100 kHz and a lower leakage current of 2.93 × 10</span><sup style="white-space:normal;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>10</sup><span style="white-space:normal;"> A/cm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 1 MV/cm (5 V) at room temperature. The obtained electrical properties could indicate a promising application of MIM Capacitors.</span>
基金Supported by the National Natural Science Foundation of China under Grant No 90407023, and the National High Technology Programme of China under Grant No 2004AA404240.
