Exploring dimensionality effects on cuprates is important for understanding the nature of high-temperature superconductivity.By atomically layer-by-layer growth with oxide molecular beam epitaxy,we demonstrate that La...Exploring dimensionality effects on cuprates is important for understanding the nature of high-temperature superconductivity.By atomically layer-by-layer growth with oxide molecular beam epitaxy,we demonstrate that La_(2−x)Sr_(x)CuO_(4)(x=0.15)thin films remain superconducting down to 2 unit cells of thickness but quickly reach the maximum superconducting transition temperature at and above 4 unit cells.By fitting the critical magnetic field(μ0H_(c2)),we show that the anisotropy of the film’s superconductivity increases with decreasing film thickness,indicating that the superconductivity of the film gradually evolves from weak three-to two-dimensional character.These results are helpful to gain more insight into the nature of high-temperature superconductivity with dimensionality.展开更多
Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As...Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.展开更多
Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhi...Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.展开更多
We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn un...We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude–Smith model.The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture.The firstand second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10^(-2)ps^(-1)and(6.6±1.8)×10^(-19)cm^(3)·ps^(-1),respectively.Meanwhile,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4μm,and it changes with the pump delay time.These results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that Ge Sn materials can be applied to high-speed optoelectronic detectors and other applications.展开更多
AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of...AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of the thin film. The surface morphology was studied by scanning electron microscope (SEM). While raising the annealing temperatures from 300˚C to 900˚C, the emission was observed from AlN: Eu under excitation of 260 nm excitation. The photoluminescence (PL) was integrated over the visible light wavelength shifted from the blue to the red zone in the CIE 1931 chromaticity coordinates. The luminescence color coordination of AlN: Eu depending on the annealing temperatures guides the further study of Eu-doped nitrides manufacturing on white light emitting diode (LED) and full color LED devices.展开更多
The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pre...The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.展开更多
The dispersion curves of bulk waves propagating in both AlN and ZnO film bulk acoustic resonators(FBARs)are presented to illustrate the mode flip of the thickness-extensional(TE)and 2nd thickness-shear(TSh2)modes.The ...The dispersion curves of bulk waves propagating in both AlN and ZnO film bulk acoustic resonators(FBARs)are presented to illustrate the mode flip of the thickness-extensional(TE)and 2nd thickness-shear(TSh2)modes.The frequency spectrum quantitative prediction(FSQP)method is used to solve the frequency spectra for predicting the coupling strength among the eigen-modes in AlN and ZnO FBARs.The results elaborate that the flip of the TE and TSh2 branches results in novel self-coupling vibration between the small-wavenumber TE and large-wavenumber TE modes,which has never been observed in the ZnO FBAR.Besides,the mode flip leads to the change in the relative positions of the frequency spectral curves about the TE cut-off frequency.The obtained frequency spectra can be used to predict the mode-coupling behaviors of the vibration modes in the AlN FBAR.The conclusions drawn from the results can help to distinguish the desirable operation modes of the AlN FBAR with very weak coupling strength from all vibration modes.展开更多
High quality Nb films were successfully prepared on both flexible polyimide(PI)and rigid Al2O3substrates and their transport properties were systematically studied at various applied currents,external magnetic fields,...High quality Nb films were successfully prepared on both flexible polyimide(PI)and rigid Al2O3substrates and their transport properties were systematically studied at various applied currents,external magnetic fields,and sample orientations.It is found that a curved Nb/PI film exhibits quite different superconducting transition and vortex dynamics compared to the flat Nb/Al2O3film.For the curved Nb/PI film,smooth superconducting transitions were obtained at low currents,while unexpected cascade structures were revealed in theρ(T)curves at high currents.We attribute this phenomenon to the gradient distribution of vortex density together with a variation of superconductivity along the curved film.In addition,reentrant superconductivity was induced in the curved Nb/PI thin film by properly choosing the measurement conditions.We attribute this effect to the vortex pinning from both in-plane vortices and out-of-plane vortices.This work reveals the complex transport properties of curved superconducting thin films,providing important insights for further theoretical investigations and practical developments of flexible superconductors.展开更多
Crystalline and non-crystalline nickel oxide (NiO) thin films were obtained by spray pyrolysis technique (SPT) using nickel acetate tetrahydrate solutions onto glass substrates at different temperatures from 225 to 35...Crystalline and non-crystalline nickel oxide (NiO) thin films were obtained by spray pyrolysis technique (SPT) using nickel acetate tetrahydrate solutions onto glass substrates at different temperatures from 225 to 350℃. Structure of the as-deposited NiO thin films have been examined by X-ray diffraction (XRD) and atomic force microscope (AFM). The results showed that an amorphous structure of the films at low substrate temperature (Ts = 225℃), while at higher Ts ≥ 275℃, a cubic single phase structure of NiO film is formed. The refractive index (n) and the extinction coefficient (k) have been calculated from the corrected transmittance and reflectance measurements over the spectral range from 250 to 2400 nm. Some of the optical absorption parameters, such as optical dispersion energies, Eo and Ed, dielectric constant, ε, the average values of oscillator strength, So, wavelength of single oscillator λo and plasma frequency, ωp, have been evaluated.展开更多
Selective upgrading of C=O bonds to afford carboxylic acid is significant for the petrochemical industry and biomass utilization.Here we declared the efficient electrooxidation of biomass-derived aldehydes family over...Selective upgrading of C=O bonds to afford carboxylic acid is significant for the petrochemical industry and biomass utilization.Here we declared the efficient electrooxidation of biomass-derived aldehydes family over NiV-layered double hydroxides(LDHs) thin films.Mechanistic studies confirmed the hydroxyl active intermediate(-OH*) generated on the surface of NiV-LDHs films by employing electrochemical impedance spectroscopy and the electron paramagnetic resonance spectroscopy.By using advanced techniques,e.g.,extended X-ray absorption fine structure and high-angle annular dark-field scanning transmission electron microscopy,NiV-LDHs films with 2.6 nm could expose larger specific surface area.Taking benzaldehyde as a model,high current density of 200 mA cm^(-2)at 1.8 V vs.RHE,81.1% conversion,77.6% yield of benzoic acid and 90.8% Faradaic efficiency were reached,which was superior to most of previous studies.Theoretical DFT analysis was well matched with experimental findings and documented that NiV-LDHs had high adsorption capacity for the aldehydes to suppress the side reaction,and the aldehydes were oxidized by the electrophilic hydroxyl radicals formed on NiV-LDHs.Our findings offer a universal strategy for the robust upgrading of diverse biomass-derived platform chemicals.展开更多
Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficu...Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.展开更多
Three-magnon scattering,a nonlinear process in which a high-energy magnon splits into two low-energy magnons with energy and momentum conservation,has been widely studied in the magnonics community.Here,we report expe...Three-magnon scattering,a nonlinear process in which a high-energy magnon splits into two low-energy magnons with energy and momentum conservation,has been widely studied in the magnonics community.Here,we report experimental observation of nonlinear three-magnon scattering in La_(0.67)Sr_(0.33)MnO_(3)thin films with low magnetic damping(~10^(-4))by all-electric and angle-resolved spin wave spectroscopy.The reflection spectra of the spin wave resonance with high-power excitation at Damon–Eshbach configuration demonstrate a scattering regime with gradual signal disappearance,where a magnon of Damon–Eshbach mode decays into two magnons of volume mode above the threshold power(-10 dBm)of the injected microwave.The nonlinear scattering is only allowed at low-field regime and the calculated dispersions of dipole-exchange spin wave claim the mechanism of allowed and forbidden three-magnon scattering.The films and heterostructures of La_(0.67)Sr_(0.33)MnO_(3)have been already demonstrated with rich physical phenomena and great versatility,in this work the nonlinear magnetic dynamics of La_(0.67)Sr_(0.33)MnO_(3)thin films is revealed,which offer more possibility for applications to oxide magnonics and nonlinear magnonic devices.展开更多
Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-...Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.展开更多
Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make i...Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.展开更多
A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reacto...A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.展开更多
The origin of ferromagnetism in epitaxial strained LaCoO_(3-x)films has long been controversial.Here,we investigated the magnetic behavior of a series of oxygen vacancy-ordered LaCoO_(3-x)films on different substrates...The origin of ferromagnetism in epitaxial strained LaCoO_(3-x)films has long been controversial.Here,we investigated the magnetic behavior of a series of oxygen vacancy-ordered LaCoO_(3-x)films on different substrates.Obvious ferromagnetism was observed in perovskite LaCoO_(3)/LSAT(LSAT=(LaAlO_(3))0.3(SrAlTaO_(6))_(0.7))and LaCoO_(3)/SrTiO_(3) films,while LaCoO_(3)/LaAlO_(3)films showed weak ferromagnetic behavior.Meanwhile,LaCoO_(2.67) films exhibited antiferromagnetic behavior.An unexpected low-temperature ferromagnetic phenomenon with a Curie temperature of~83 K and a saturation magnetization of~1.2μB/Co was discovered in 15 nm thick LaCoO_(2.5)/LSAT thin films,which is probably related to the change in the interface CoO_(6) octahedron rotation pattern.Meanwhile,the observed ferromagnetism gradually disappeared as the thickness of the film increased,indicating a relaxation of tensile strain.Analysis suggests that the rotation and rhombohedral distortion of the CoO_(6) octahedron weakened the crystal field splitting and promoted the generation of the ordered high-spin state of Co^(2+).Thus the super-exchange effect between Co^(2+)(high spin state),Co^(2+)(low spin state)and Co^(2+)(high spin state)produced a low-temperature ferromagnetic behavior.However,compressive-strained LaCoO_(2.5)film on a LaAlO_(3)substrate showed normal anti-ferromagnetic behavior.These results demonstrate that both oxygen vacancies and tensile strain are correlated with the emergent magnetic properties in epitaxial LaCoO_(3-x)films and provide a new perspective to regulate the magnetic properties of transition oxide thin films.展开更多
This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been ...This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.展开更多
Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applicat...Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applications on substrate materials with low melting points.We report a new synthesis route for PDC coatings using initiated chemical vapor deposited poly(1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane)(pV_3D_3) as the precurs or.We investigated the changes in siloxane moieties and the network topology,and proposed a three-stage mechanism for the thermal annealing process.The rise of the connectivity number for the structures obtained at increased annealing temperatures was found with strong correlation to the enhanced mechanical properties and thermal conductivity.Our PDC films obtained via annealing at 850℃ exhibit at least 14.6% higher hardness than prior reports for PDCs synthesized below 1100℃.Furthermore,thermal conductivity up to 1.02 W(mK)^(-1) was achieved at the annealing temperature as low as 700℃,which is on the same order of magnitude as PDCs obtained above 1100℃.Using minimum thermal conductivity models,we found that the thermal transport is dominated by diffusons in the films below the percolation of rigidity,while ultra-short mean-free path phonons contribute to the thermal conductivity of the films above the percolation threshold.The findings of this work provide new insights for the development of wear-resistant and thermally conductive PDC thin films for durable protection coatings.展开更多
As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties a...As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb<sub>2</sub>Se<sub>3</sub> thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.展开更多
We carried out experimental investigations of the geometric effect on the electronic behavior in Pb_(1-x)Bi_(x) thin films by scanning tunneling microscopy and spectroscopy.Single crystal monolayer Pb_(0.74)Bi_(0.26) ...We carried out experimental investigations of the geometric effect on the electronic behavior in Pb_(1-x)Bi_(x) thin films by scanning tunneling microscopy and spectroscopy.Single crystal monolayer Pb_(0.74)Bi_(0.26) and two-monolayer Pb_(0.75)Bi_(0.25)Pb_(1-x)Bi_(x) thin films were fabricated by molecular beam epitaxy,where large surface corrugations were observed.Combined with tunneling spectroscopic measurements,it is found that atomic corrugations can widely change the electronic behaviors.These findings show that the Pb_(1-x)Bi_(x) system can be a promising platform to further explore geometry-decorated electronic behavior in two-dimensional metallic thin films.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1403000)the Na-tional Natural Science Foundation of China(Grant No.12250710675).
文摘Exploring dimensionality effects on cuprates is important for understanding the nature of high-temperature superconductivity.By atomically layer-by-layer growth with oxide molecular beam epitaxy,we demonstrate that La_(2−x)Sr_(x)CuO_(4)(x=0.15)thin films remain superconducting down to 2 unit cells of thickness but quickly reach the maximum superconducting transition temperature at and above 4 unit cells.By fitting the critical magnetic field(μ0H_(c2)),we show that the anisotropy of the film’s superconductivity increases with decreasing film thickness,indicating that the superconductivity of the film gradually evolves from weak three-to two-dimensional character.These results are helpful to gain more insight into the nature of high-temperature superconductivity with dimensionality.
基金the financial support from the National Key Research and Development Program of China(No.2017YFB0305500)the State Key Laboratory of Powder Metallurgy,Central South University,Changsha,China.
文摘Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.11874304 and 11574253)。
文摘Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12004067,11974070,62027807,and 52272137)the National Key R&D Program of China(Grant No.2022YFA1403000)。
文摘We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude–Smith model.The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture.The firstand second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10^(-2)ps^(-1)and(6.6±1.8)×10^(-19)cm^(3)·ps^(-1),respectively.Meanwhile,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4μm,and it changes with the pump delay time.These results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that Ge Sn materials can be applied to high-speed optoelectronic detectors and other applications.
文摘AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of the thin film. The surface morphology was studied by scanning electron microscope (SEM). While raising the annealing temperatures from 300˚C to 900˚C, the emission was observed from AlN: Eu under excitation of 260 nm excitation. The photoluminescence (PL) was integrated over the visible light wavelength shifted from the blue to the red zone in the CIE 1931 chromaticity coordinates. The luminescence color coordination of AlN: Eu depending on the annealing temperatures guides the further study of Eu-doped nitrides manufacturing on white light emitting diode (LED) and full color LED devices.
基金the support from National Natural Science Foundation of China (22208355, 22178363 and 21978300)the financial support and mica samples from Changzi Wu and RIKA technology CO., LTD.
文摘The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.
基金Project supported by the National Natural Science Foundation of China(Nos.11872329,12192211,and 12072315)the Natural Science Foundation of Zhejiang Province of China(No.LD21A020001)+1 种基金the National Postdoctoral Program for Innovation Talents of China(No.BX2021261)the China Postdoctoral Science Foundation Funded Project(No.2022M722745)。
文摘The dispersion curves of bulk waves propagating in both AlN and ZnO film bulk acoustic resonators(FBARs)are presented to illustrate the mode flip of the thickness-extensional(TE)and 2nd thickness-shear(TSh2)modes.The frequency spectrum quantitative prediction(FSQP)method is used to solve the frequency spectra for predicting the coupling strength among the eigen-modes in AlN and ZnO FBARs.The results elaborate that the flip of the TE and TSh2 branches results in novel self-coupling vibration between the small-wavenumber TE and large-wavenumber TE modes,which has never been observed in the ZnO FBAR.Besides,the mode flip leads to the change in the relative positions of the frequency spectral curves about the TE cut-off frequency.The obtained frequency spectra can be used to predict the mode-coupling behaviors of the vibration modes in the AlN FBAR.The conclusions drawn from the results can help to distinguish the desirable operation modes of the AlN FBAR with very weak coupling strength from all vibration modes.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2021YFA0718700,2018YFB0704102,2017YFA0303003,2017YFA0302902,2016YFA0300301,and 2021YFA0718802)the National Natural Science Foundation of China(Grant Nos.11927808,11834016,118115301,119611410,11961141008,61727805+5 种基金11961141002)the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(CAS)(Grant Nos.QYZDB-SSW-SLH008 and QYZDY-SSW-SLH001)CAS Interdisciplinary Innovation Team,the Strategic Priority Research Program(B)of CAS(Grant Nos.XDB25000000and XDB33000000)the Beijing Natural Science Foundation(Grant No.Z190008)the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101340002)the support from the China Postdoctoral Science Foundation(Grant No.2022M711497)。
文摘High quality Nb films were successfully prepared on both flexible polyimide(PI)and rigid Al2O3substrates and their transport properties were systematically studied at various applied currents,external magnetic fields,and sample orientations.It is found that a curved Nb/PI film exhibits quite different superconducting transition and vortex dynamics compared to the flat Nb/Al2O3film.For the curved Nb/PI film,smooth superconducting transitions were obtained at low currents,while unexpected cascade structures were revealed in theρ(T)curves at high currents.We attribute this phenomenon to the gradient distribution of vortex density together with a variation of superconductivity along the curved film.In addition,reentrant superconductivity was induced in the curved Nb/PI thin film by properly choosing the measurement conditions.We attribute this effect to the vortex pinning from both in-plane vortices and out-of-plane vortices.This work reveals the complex transport properties of curved superconducting thin films,providing important insights for further theoretical investigations and practical developments of flexible superconductors.
文摘Crystalline and non-crystalline nickel oxide (NiO) thin films were obtained by spray pyrolysis technique (SPT) using nickel acetate tetrahydrate solutions onto glass substrates at different temperatures from 225 to 350℃. Structure of the as-deposited NiO thin films have been examined by X-ray diffraction (XRD) and atomic force microscope (AFM). The results showed that an amorphous structure of the films at low substrate temperature (Ts = 225℃), while at higher Ts ≥ 275℃, a cubic single phase structure of NiO film is formed. The refractive index (n) and the extinction coefficient (k) have been calculated from the corrected transmittance and reflectance measurements over the spectral range from 250 to 2400 nm. Some of the optical absorption parameters, such as optical dispersion energies, Eo and Ed, dielectric constant, ε, the average values of oscillator strength, So, wavelength of single oscillator λo and plasma frequency, ωp, have been evaluated.
基金supported by the National Natural Science Foundation of China(22078374,21776324)the Scientific and Technological Planning Project of Guangzhou(202206010145)+2 种基金the National Ten Thousand Talent Plan,Key-Area Research and Development Program of Guangdong Province(2019B110209003)the Guangdong Basic and Applied Basic Research Foundation(2019B1515120058,2020A1515011149)the Start-up Fund for Senior Talents in Jiangsu University(21JDG060)。
文摘Selective upgrading of C=O bonds to afford carboxylic acid is significant for the petrochemical industry and biomass utilization.Here we declared the efficient electrooxidation of biomass-derived aldehydes family over NiV-layered double hydroxides(LDHs) thin films.Mechanistic studies confirmed the hydroxyl active intermediate(-OH*) generated on the surface of NiV-LDHs films by employing electrochemical impedance spectroscopy and the electron paramagnetic resonance spectroscopy.By using advanced techniques,e.g.,extended X-ray absorption fine structure and high-angle annular dark-field scanning transmission electron microscopy,NiV-LDHs films with 2.6 nm could expose larger specific surface area.Taking benzaldehyde as a model,high current density of 200 mA cm^(-2)at 1.8 V vs.RHE,81.1% conversion,77.6% yield of benzoic acid and 90.8% Faradaic efficiency were reached,which was superior to most of previous studies.Theoretical DFT analysis was well matched with experimental findings and documented that NiV-LDHs had high adsorption capacity for the aldehydes to suppress the side reaction,and the aldehydes were oxidized by the electrophilic hydroxyl radicals formed on NiV-LDHs.Our findings offer a universal strategy for the robust upgrading of diverse biomass-derived platform chemicals.
基金supported by National Natural Science Foundation of China(No.U20A20209)Zhejiang Provincial Natural Science Foundation of China(LD19E020001)+1 种基金Zhejiang Provincial Key Research and Development Program(2021C01030)"Pioneer"and"Leading Goose"R&D Program of Zhejiang Province(2021C01SA301612)。
文摘Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFA1402801)the support from the China Post-doctoral Science Foundation Funded Project(Grant No.2021M700344)+1 种基金by the National Natural Science Foundation of China(Grant Nos.12074026,12104208,and U1801661)the support from the Academic Excellence Foundation of BUAA for PhD Students。
文摘Three-magnon scattering,a nonlinear process in which a high-energy magnon splits into two low-energy magnons with energy and momentum conservation,has been widely studied in the magnonics community.Here,we report experimental observation of nonlinear three-magnon scattering in La_(0.67)Sr_(0.33)MnO_(3)thin films with low magnetic damping(~10^(-4))by all-electric and angle-resolved spin wave spectroscopy.The reflection spectra of the spin wave resonance with high-power excitation at Damon–Eshbach configuration demonstrate a scattering regime with gradual signal disappearance,where a magnon of Damon–Eshbach mode decays into two magnons of volume mode above the threshold power(-10 dBm)of the injected microwave.The nonlinear scattering is only allowed at low-field regime and the calculated dispersions of dipole-exchange spin wave claim the mechanism of allowed and forbidden three-magnon scattering.The films and heterostructures of La_(0.67)Sr_(0.33)MnO_(3)have been already demonstrated with rich physical phenomena and great versatility,in this work the nonlinear magnetic dynamics of La_(0.67)Sr_(0.33)MnO_(3)thin films is revealed,which offer more possibility for applications to oxide magnonics and nonlinear magnonic devices.
基金support of the laboratory of active components and materials,Oum El Bouaghi University.
文摘Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA0718700)the National Natural Science Foundation of China(Grant No.12174347)+1 种基金the Synergetic Extreme Condition User Facility(SECUF)the Center for Materials Genome。
文摘Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.
文摘A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.
基金supported by the National Key Research and Development Program of China(Grant Nos.2020YFA0711502 and 2019YFA0704900)the National Natural Sciences Foundation of China(Grant Nos.52088101,51971240,and 11921004)the Key Program of the Chinese Academy of Sciences and the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB33030200)。
文摘The origin of ferromagnetism in epitaxial strained LaCoO_(3-x)films has long been controversial.Here,we investigated the magnetic behavior of a series of oxygen vacancy-ordered LaCoO_(3-x)films on different substrates.Obvious ferromagnetism was observed in perovskite LaCoO_(3)/LSAT(LSAT=(LaAlO_(3))0.3(SrAlTaO_(6))_(0.7))and LaCoO_(3)/SrTiO_(3) films,while LaCoO_(3)/LaAlO_(3)films showed weak ferromagnetic behavior.Meanwhile,LaCoO_(2.67) films exhibited antiferromagnetic behavior.An unexpected low-temperature ferromagnetic phenomenon with a Curie temperature of~83 K and a saturation magnetization of~1.2μB/Co was discovered in 15 nm thick LaCoO_(2.5)/LSAT thin films,which is probably related to the change in the interface CoO_(6) octahedron rotation pattern.Meanwhile,the observed ferromagnetism gradually disappeared as the thickness of the film increased,indicating a relaxation of tensile strain.Analysis suggests that the rotation and rhombohedral distortion of the CoO_(6) octahedron weakened the crystal field splitting and promoted the generation of the ordered high-spin state of Co^(2+).Thus the super-exchange effect between Co^(2+)(high spin state),Co^(2+)(low spin state)and Co^(2+)(high spin state)produced a low-temperature ferromagnetic behavior.However,compressive-strained LaCoO_(2.5)film on a LaAlO_(3)substrate showed normal anti-ferromagnetic behavior.These results demonstrate that both oxygen vacancies and tensile strain are correlated with the emergent magnetic properties in epitaxial LaCoO_(3-x)films and provide a new perspective to regulate the magnetic properties of transition oxide thin films.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2022YFA1603903 and 2021YFA0718700)the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101340002)+3 种基金the National Natural Science Foundation of China(Grant Nos.61971415,51972012,11927808,119611410,11961141008,and 12274439)the Strategic Priority Research Program(B)of Chinese Academy of Sciences(Grant No.XDB25000000)Beijing Natural Science Foundation(Grant No.Z190008)Basic Research Youth Team of Chinese Academy of Sciences(Grant No.2022YSBR-048).
文摘This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.
基金funding from the National Natural Science Foundation of China (22178301,21938011,51876186and 52150410417)the funding from the Natural Science Foundation of Zhejiang Province (LR21B060003 and LZ19E060002)+1 种基金grant from Science Technology Department of Zhejiang Province (2023C01182)supported by Shanxi Institute of Zhejiang University for New Materials and Chemical Industry(2022SZ-TD005)。
文摘Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applications on substrate materials with low melting points.We report a new synthesis route for PDC coatings using initiated chemical vapor deposited poly(1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane)(pV_3D_3) as the precurs or.We investigated the changes in siloxane moieties and the network topology,and proposed a three-stage mechanism for the thermal annealing process.The rise of the connectivity number for the structures obtained at increased annealing temperatures was found with strong correlation to the enhanced mechanical properties and thermal conductivity.Our PDC films obtained via annealing at 850℃ exhibit at least 14.6% higher hardness than prior reports for PDCs synthesized below 1100℃.Furthermore,thermal conductivity up to 1.02 W(mK)^(-1) was achieved at the annealing temperature as low as 700℃,which is on the same order of magnitude as PDCs obtained above 1100℃.Using minimum thermal conductivity models,we found that the thermal transport is dominated by diffusons in the films below the percolation of rigidity,while ultra-short mean-free path phonons contribute to the thermal conductivity of the films above the percolation threshold.The findings of this work provide new insights for the development of wear-resistant and thermally conductive PDC thin films for durable protection coatings.
文摘As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb<sub>2</sub>Se<sub>3</sub> thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.
基金Project supported by the National Key Basic Research Program of China(Grant No.2017YFA0205004)the National Natural Science Foundation of China(Grant Nos.92165201,11474261,and 11634011)+1 种基金the Fundamental Research Funds for the Central Universities(Grant No.WK3510000006)the Anhui Initiative Fund in Quantum Information Technologies(Grant No.AHY170000)。
文摘We carried out experimental investigations of the geometric effect on the electronic behavior in Pb_(1-x)Bi_(x) thin films by scanning tunneling microscopy and spectroscopy.Single crystal monolayer Pb_(0.74)Bi_(0.26) and two-monolayer Pb_(0.75)Bi_(0.25)Pb_(1-x)Bi_(x) thin films were fabricated by molecular beam epitaxy,where large surface corrugations were observed.Combined with tunneling spectroscopic measurements,it is found that atomic corrugations can widely change the electronic behaviors.These findings show that the Pb_(1-x)Bi_(x) system can be a promising platform to further explore geometry-decorated electronic behavior in two-dimensional metallic thin films.
