This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentr...This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd<sub>0.4</sub>Zn<sub>0.6</sub>S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS are comparable, Cd<sub>0.4</sub>Zn<sub>0.6</sub>S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS showed that optimum buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.展开更多
Lithium-sulfur(Li-S)system coupled with thin-film solid electrolyte as a novel high-energy micro-battery has enormous potential for complementing embedded energy harvesters to enable the autonomy of the Internet of Th...Lithium-sulfur(Li-S)system coupled with thin-film solid electrolyte as a novel high-energy micro-battery has enormous potential for complementing embedded energy harvesters to enable the autonomy of the Internet of Things microdevice.However,the volatility in high vacuum and intrinsic sluggish kinetics of S hinder researchers from empirically integrating it into allsolid-state thin-film batteries,leading to inexperience in fabricating all-solid-state thin-film Li-S batteries(TFLSBs).Herein,for the first time,TFLSBs have been successfully constructed by stacking vertical graphene nanosheets-Li2S(VGsLi2S)composite thin-film cathode,lithium-phosphorous-oxynitride(LiPON)thin-film solid electrolyte,and Li metal anode.Fundamentally eliminating Lipolysulfide shuttle effect and maintaining a stable VGs-Li2S/LiPON interface upon prolonged cycles have been well identified by employing the solid-state Li-S system with an“unlimited Li”reservoir,which exhibits excellent longterm cycling stability with a capacity retention of 81%for 3,000 cycles,and an exceptional high temperature tolerance up to 60℃.More impressively,VGs-Li2S-based TFLSBs with evaporated-Li thin-film anode also demonstrate outstanding cycling performance over 500 cycles with a high Coulombic efficiency of 99.71%.Collectively,this study presents a new development strategy for secure and high-performance rechargeable all-solid-state thin-film batteries.展开更多
Cocamidopropyl hydroxyl sulfobetaine(CHSB)is one of the most promising foaming agents for high-salinity reservoirs because the salt in place facilitates its foam stability,even with salinity as high as 2×10^(5)mg...Cocamidopropyl hydroxyl sulfobetaine(CHSB)is one of the most promising foaming agents for high-salinity reservoirs because the salt in place facilitates its foam stability,even with salinity as high as 2×10^(5)mg/L.However,the synergistic effects between CHSB and salt have not been fully understood.This study utilized bulk foam tests and thin-film interferometry to comprehensively investigate the macroscopic and microscopic decay processes of CHSB foams with NaCl concentrations ranging from 2.3×10^(4)to 2.1×10^(5)mg/L.We focused on the dilatational viscoelasticity and dynamic thin-film thickness to elucidate the high-salinity-enhanced foam stability.The increase in dilatational viscoelasticity and supramolecular oscillating structural force(Π_(OS))with salinity dominated the superior stability of CHSB foam.With increasing salinity,more CHSB molecules accumulated on the surface with a lower diffusion rate,leading to high dilatational moduli and surface elasticity,thus decelerating coarsening and coalescence.Meanwhile,the number density of micelles in the thin film increased with salinity,resulting in increasedΠOS.Consequently,the energy barrier for stepwise thinning intensified,and the thin-film drainage slowed.This work conduces to understand the mechanisms behind the pronounced stability of betaine foam and can promote the widespread application of foam in harsh reservoirs.展开更多
Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of tu...Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.展开更多
As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this w...As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.展开更多
Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode ...Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface.展开更多
Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Co...Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.展开更多
Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in impr...Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.展开更多
Thin-film composite(TFC) reverse osmosis(RO) membranes are playing the dominating role in desalination.Tremendous efforts have been put in the studies on the polyamide selective layers. However, the effect of the subs...Thin-film composite(TFC) reverse osmosis(RO) membranes are playing the dominating role in desalination.Tremendous efforts have been put in the studies on the polyamide selective layers. However, the effect of the substrate layers is far less concerned. In this review, we summarize the works that consider the impacts of the substrates, including pore sizes, surface hydrophilicity, on the processes of interfacial polymerization and consequently on the morphologies of the active layers and on final RO performances of the composite membranes. All the works indicate that the pore sizes and surface hydrophilicity of the substrate evidently influence the RO performances of the composite membranes. Unfortunately, we find that the observations and understandings on the substrate effect are frequently varied from case to case because of the lack of substrates with uniform pores and surface chemistries. We suggest using track-etched membranes or anodized alumina membranes having relatively uniform pores and functionalizable pore walls as model substrates to elucidate the substrate effect.Moreover, we argue that homoporous membranes derived from block copolymers have the potential to be used as substrates for the large-scale production of high-performances TFC RO membranes.展开更多
In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se...In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide(RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW^(-1) and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.展开更多
Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electri...Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance,large-area uniformity,and low processing temperature.This article reviews the recent progress and major trends in the field of IGZO-based TFTs.After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs,an overview of IGZO materials and IGZO-based TFTs is given.In this part,IGZO material electron travelling orbitals and deposition methods are introduced,and the specific device structures and electrical performance are also presented.Afterwards,the recent advances of IGZO-based TFT applications are summarized,including flat panel display drivers,novel sensors,and emerging neuromorphic systems.In particular,the realization of flexible electronic systems is discussed.The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.展开更多
Based on the detailed computer .simulation of the indentation testing on the thin-film systems, the present paper explores the detailed procedure of determining elastic properties (elastic modulus E(f) and Poisson rat...Based on the detailed computer .simulation of the indentation testing on the thin-film systems, the present paper explores the detailed procedure of determining elastic properties (elastic modulus E(f) and Poisson ratio v(f) ) and creep parameters (CCREEP (f) and nCREEP (f)) for a simple Norton law (ε=CCREEP (f)σnCREEP(f), where ε is creep strain rate, and σ is the stress) material for a thin film coated on a creep substrate, whose elastic properties(E(s) and v(s)) and creep properties (CCREEP(s) and nCREEP(s) ) of the substrate are known, from indentation elastic and creep testing, respectively. The influences of the thickness of the thin-film and the size of the indenter on the indentation behavior have been discussed. It is shown that the boundary between the thin film and the substrate has great influence on the indentation creep behavior. The relative sizes of indentation systems are chosen so that the behavior of the indentation on the film is influenced by the substrate. The two elastic parameters E(f) and v(f) of the film are coupled on the influence of the elastic behavior of indentation. With the two different size indenters, the two elastic parameters E(f) and v(f) of the film can be uniquely determined by the indentation experimental slopes of depth to applied net section stress results. The procedure of determining of the two Norton law parameters CCREEP (f) and nCREEP(f) includes the following steps by the steady indentation rate d. The first step to calculate the creep indentation rate on certain loads of the two different sizes of indenters on a set of assumed values of CCREEP (f) and nCREEP (f). Then to build relationship between the creep indentation rate and the assumed CCREEP(f) and nCREEP(f). With the experimental creep indentation rate to intersect two sets of CCREEP (f) and nCREEP(f), which have the same values of d. The last step is to build the CCREEP(f) and nCREEP(f)curves from the intersection points for the two indenters.These two curves CCREEP and nCREEP(f) will intersect at one point. The axial values of the point are what we want. The procedure presented in the paper to determine the elastic parameters and creep parameters from the indentation experiments can be applied to any material systems.展开更多
Lithium niobate on insulator(LNOI)is rising as one of the most promising platforms for integrated photonics due to the high-index-contrast and excellent material properties of lithium niobate,such as wideband transpar...Lithium niobate on insulator(LNOI)is rising as one of the most promising platforms for integrated photonics due to the high-index-contrast and excellent material properties of lithium niobate,such as wideband transparency from visible to mid-infrared,large electro-optic,piezoelectric,and second-order harmonic coefficients.The fast-developing micro-and nanostructuring techniques on LNOI have enabled various structure,devices,systems,and applications.In this contribution,we review the latest developments in this platform,including ultra-high speed electro-optic modulators,optical frequency combs,opto-electro-mechanical system on chip,second-harmonic generation in periodically poled LN waveguides,and efficient edge coupling for LNOI.展开更多
A theoretical model is developed for predicting both conduction and diffusion in thin-film ionic conductors or cables. With the linearized Poisson-Nernst-Planck(PNP)theory, the two-dimensional(2D) equations for thin i...A theoretical model is developed for predicting both conduction and diffusion in thin-film ionic conductors or cables. With the linearized Poisson-Nernst-Planck(PNP)theory, the two-dimensional(2D) equations for thin ionic conductor films are obtained from the three-dimensional(3D) equations by power series expansions in the film thickness coordinate, retaining the lower-order equations. The thin-film equations for ionic conductors are combined with similar equations for one thin dielectric film to derive the 2D equations of thin sandwich films composed of a dielectric layer and two ionic conductor layers. A sandwich film in the literature, as an ionic cable, is analyzed as an example of the equations obtained in this paper. The numerical results show the effect of diffusion in addition to the conduction treated in the literature. The obtained theoretical model including both conduction and diffusion phenomena can be used to investigate the performance of ionic-conductor devices with any frequency.展开更多
Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications(RFIDs...Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications(RFIDs),etc.Zinc oxide(ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices,owing to their high electrical performances,together with low processing temperatures and good optical transparencies.In this paper,we review recent advances in flexible and transparent thin-film transistors(TFTs) based on ZnO and relevant materials.After a brief introduction,the main progress of the preparation of each component(substrate,electrodes,channel and dielectrics) is summarized and discussed.Then,the effect of mechanical bending on electrical performance is highlighted.Finally,we suggest the challenges and opportunities in future investigations.展开更多
In the development of the composite gas separation membranes for post-combustion CO_2 capture, little attention is focused on the optimization of the membrane supports, which satisfy the conditions of this technology....In the development of the composite gas separation membranes for post-combustion CO_2 capture, little attention is focused on the optimization of the membrane supports, which satisfy the conditions of this technology. The primary requirements to the membrane supports are concerned with their high CO_2 permeance. In this work, the membrane supports with desired characteristics were developed as high-permeance gas separation thin film composite(TFC) membranes with the thin defect-free layer from the crosslinked highly permeable polymer, poly[1-(trimethylsilyl)-1-propyne](PTMSP). This layer is insoluble in chloroform and can be used as a gutter layer for the further deposition of the CO_2-selective materials from the organic solvents. Crosslinking of PTMSP was performed using polyethyleneimine(PEI) and poly(ethyleneglycol) diglycidyl ether(PEGDGE) as crosslinking agents. Optimal concentrations of PEI in PTMSP and PEGDGE in methanol were selected in order to diminish the undesirable effect on the final membrane gas transport characteristics. The conditions of the kiss-coating technique for the deposition of the thin defect-free PTMSP-based layer, namely, composition of the casting solution and the speed of movement of the porous commercial microfiltration-grade support, were optimized. The procedure of post-treatment with alcohols and alcohol solutions was shown to be crucial for the improvement of gas permeance of the membranes with the crosslinked PTMSP layer having thickness ranging within 1-2.5 μm. The claimed membranes showed the following characteristics: CO_2 permeance is equal to 50—54 m^3(STP)/(m^2 h bar)(18,500—20,000 GPU), ideal CO_2/N_2 selectivity is 3.6-3.7, and their selective layers are insoluble in chloroform. Thus, the developed highpermeance TFC membranes are considered as a promising supports for further modification by enhanced CO_2 selective layer formation.展开更多
A cobalt-iron alloy thin-film electrode-based electrochemical hydrogen-phosphate-ion sensor was prepared by electrodepositing on an Au-coated Al2O3 substrate from an aqueous solution of metal-salts. The use of a cobal...A cobalt-iron alloy thin-film electrode-based electrochemical hydrogen-phosphate-ion sensor was prepared by electrodepositing on an Au-coated Al2O3 substrate from an aqueous solution of metal-salts. The use of a cobalt-iron alloy electrode greatly improved the hydrogen-ion sensor response performance, i.e., the sensor worked stably for more than 7 weeks and showed a quick response time of several seconds. Among the cobalt and iron alloy systems tested, the electrodeposited Co58Fe42 thin-film electrode showed the best EMF response characteristics, i.e., the sensor exhibited a linear potentiometric response to hydrogen-phosphate ion at the concentration range between 1.0 × 10–5 and 1.0 × 10–2 M with the slope of –43 mV/decade at pH 5.0 and at 30℃. A sensing mechanism of the Co-based potentiometric hydrogen-phosphate ion sensor was proposed on the basis of results of instrumental analysis.展开更多
Flexible thin-film transistors(TFTs)have attracted wide interest in the development of flexible and wearable displays or sensors.However,the conventional high processing temperatures hinder the preparation of stable a...Flexible thin-film transistors(TFTs)have attracted wide interest in the development of flexible and wearable displays or sensors.However,the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates.Here,we develop a stable laminated Al_(2)O_(3)/HfO_(2) insulator by atomic layer deposition at a relatively lower temperature of 150℃.A sputtered amorphous indium-gallium-zinc oxide(IGZO)with the stoichiometry of In_(0.37)Ga_(0.20)Zn_(0.18)O_(0.25) is used as the active channel material.The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al_(2)O_(3)/HfO_(2) nanolaminates.Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al_(2)O_(3),crystallized HfO_(2),and the aluminate Al-Hf-O phase,the as-prepared TFTs present the carrier mobilities of 9.7 cm^(2) V^(−1) s^(−1),ON/OFF ratio of-1.3×10^(6),subthreshold voltage of 0.1 V,saturated current up to 0.83 mA,and subthreshold swing of 0.256 V dec^(−1),signifying a high-performance flexible TFT,which simultaneously able to withstand the bending radius of 40 mm.The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60-70%,a temperature of 25-30℃ environment.The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.展开更多
文摘This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd<sub>0.4</sub>Zn<sub>0.6</sub>S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS are comparable, Cd<sub>0.4</sub>Zn<sub>0.6</sub>S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS showed that optimum buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.
基金supported by National Natural Science Foundation of China(No.U22A20118)Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(No.2021ZR146,2021ZZ122)Award Program for Fujian Minjiang Scholar Professorship。
文摘Lithium-sulfur(Li-S)system coupled with thin-film solid electrolyte as a novel high-energy micro-battery has enormous potential for complementing embedded energy harvesters to enable the autonomy of the Internet of Things microdevice.However,the volatility in high vacuum and intrinsic sluggish kinetics of S hinder researchers from empirically integrating it into allsolid-state thin-film batteries,leading to inexperience in fabricating all-solid-state thin-film Li-S batteries(TFLSBs).Herein,for the first time,TFLSBs have been successfully constructed by stacking vertical graphene nanosheets-Li2S(VGsLi2S)composite thin-film cathode,lithium-phosphorous-oxynitride(LiPON)thin-film solid electrolyte,and Li metal anode.Fundamentally eliminating Lipolysulfide shuttle effect and maintaining a stable VGs-Li2S/LiPON interface upon prolonged cycles have been well identified by employing the solid-state Li-S system with an“unlimited Li”reservoir,which exhibits excellent longterm cycling stability with a capacity retention of 81%for 3,000 cycles,and an exceptional high temperature tolerance up to 60℃.More impressively,VGs-Li2S-based TFLSBs with evaporated-Li thin-film anode also demonstrate outstanding cycling performance over 500 cycles with a high Coulombic efficiency of 99.71%.Collectively,this study presents a new development strategy for secure and high-performance rechargeable all-solid-state thin-film batteries.
基金The authors would like to be grateful for the financial support of National Natural Science Foundation of China(No.51904256).
文摘Cocamidopropyl hydroxyl sulfobetaine(CHSB)is one of the most promising foaming agents for high-salinity reservoirs because the salt in place facilitates its foam stability,even with salinity as high as 2×10^(5)mg/L.However,the synergistic effects between CHSB and salt have not been fully understood.This study utilized bulk foam tests and thin-film interferometry to comprehensively investigate the macroscopic and microscopic decay processes of CHSB foams with NaCl concentrations ranging from 2.3×10^(4)to 2.1×10^(5)mg/L.We focused on the dilatational viscoelasticity and dynamic thin-film thickness to elucidate the high-salinity-enhanced foam stability.The increase in dilatational viscoelasticity and supramolecular oscillating structural force(Π_(OS))with salinity dominated the superior stability of CHSB foam.With increasing salinity,more CHSB molecules accumulated on the surface with a lower diffusion rate,leading to high dilatational moduli and surface elasticity,thus decelerating coarsening and coalescence.Meanwhile,the number density of micelles in the thin film increased with salinity,resulting in increasedΠOS.Consequently,the energy barrier for stepwise thinning intensified,and the thin-film drainage slowed.This work conduces to understand the mechanisms behind the pronounced stability of betaine foam and can promote the widespread application of foam in harsh reservoirs.
基金supported by Grant RGC 16215720 from the Science and Technology Program of Shenzhen under JCYJ20200109140601691Grant GHP/018/21SZ from the Innovation and Technology Fund+1 种基金Grant SGDX20211123145404006 from the Science and Technology Program of ShenzhenFundamental and Applied Fundamental Research Fund of Guangdong Province 2021B1515130001。
文摘Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.
基金supported by National Key Research and Development Program under Grant No.2022YFB3607100Shenzhen Research Programs under Grant Nos.JCYJ20200109140601691,JCYJ20190808154803565,SGDX20201103095607022,SGDX20211123145404006,and GXWD20201231165807007-20200807025846001。
文摘As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.
基金This work was supported by the High Level Talents Project Fund of Hainan Basic and Applied Research Program(NATURAL SCIENCE)(Grant No.2019RC118).
文摘Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface.
基金Project supported by the National Natural Science Foundation of China (Grant No.61874029)。
文摘Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.
基金financially supported in part by Shenzhen Municipal Research Program(Grant NO.SGDX20211123145404006)in part by National Natural Science Foundation of China(Grant NO.62274111)+1 种基金in part by Guangdong Basic and Applied Basic Research Foundation(Grant NO.2021A1515011858)in part by Innovation and Technology Fund of Hong Kong(Grant NO.GHP/018/21SZ)。
文摘Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.
基金Supported by the National Basic Research Program of China(2015CB655301)the Natural Science Foundation of Jiangsu Province(BK20150063)the Project of Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)
文摘Thin-film composite(TFC) reverse osmosis(RO) membranes are playing the dominating role in desalination.Tremendous efforts have been put in the studies on the polyamide selective layers. However, the effect of the substrate layers is far less concerned. In this review, we summarize the works that consider the impacts of the substrates, including pore sizes, surface hydrophilicity, on the processes of interfacial polymerization and consequently on the morphologies of the active layers and on final RO performances of the composite membranes. All the works indicate that the pore sizes and surface hydrophilicity of the substrate evidently influence the RO performances of the composite membranes. Unfortunately, we find that the observations and understandings on the substrate effect are frequently varied from case to case because of the lack of substrates with uniform pores and surface chemistries. We suggest using track-etched membranes or anodized alumina membranes having relatively uniform pores and functionalizable pore walls as model substrates to elucidate the substrate effect.Moreover, we argue that homoporous membranes derived from block copolymers have the potential to be used as substrates for the large-scale production of high-performances TFC RO membranes.
基金partially supported by the National Key Basic Research Program 973 (2013CB328804, 2013CB328803)the National High-Tech R&D Program 863 of China (2012AA03A302, 2013AA011004)+4 种基金the National Natural Science Foundation Project (51120125001, 61271053, 61306140, 61405033, 91333118, 61372030, 61307077 and 51202028)the Beijing Natural Science Foundation (4144076)the China Postdoctoral Science Foundation (2013M530613 and 2015T80080)the Natural Science Foundation Project of Jiangsu Province (BK20141390, BK20130629, and BK20130618)the Scientific Research Department of Graduate School in Southeast University
文摘In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide(RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW^(-1) and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.
基金The authors are grateful for the financial support from the National Natural Science Foundation of China(Grant No.62074075,61834001)the National Key R&D Program of China(Grant No.2019YFB2205400).
文摘Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance,large-area uniformity,and low processing temperature.This article reviews the recent progress and major trends in the field of IGZO-based TFTs.After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs,an overview of IGZO materials and IGZO-based TFTs is given.In this part,IGZO material electron travelling orbitals and deposition methods are introduced,and the specific device structures and electrical performance are also presented.Afterwards,the recent advances of IGZO-based TFT applications are summarized,including flat panel display drivers,novel sensors,and emerging neuromorphic systems.In particular,the realization of flexible electronic systems is discussed.The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.
基金the Alexander von Humboldt FOundation. GE would liketo aCknowledge funding from Deutsche Forschungsgemeinschaft (SFB 526: Rheo
文摘Based on the detailed computer .simulation of the indentation testing on the thin-film systems, the present paper explores the detailed procedure of determining elastic properties (elastic modulus E(f) and Poisson ratio v(f) ) and creep parameters (CCREEP (f) and nCREEP (f)) for a simple Norton law (ε=CCREEP (f)σnCREEP(f), where ε is creep strain rate, and σ is the stress) material for a thin film coated on a creep substrate, whose elastic properties(E(s) and v(s)) and creep properties (CCREEP(s) and nCREEP(s) ) of the substrate are known, from indentation elastic and creep testing, respectively. The influences of the thickness of the thin-film and the size of the indenter on the indentation behavior have been discussed. It is shown that the boundary between the thin film and the substrate has great influence on the indentation creep behavior. The relative sizes of indentation systems are chosen so that the behavior of the indentation on the film is influenced by the substrate. The two elastic parameters E(f) and v(f) of the film are coupled on the influence of the elastic behavior of indentation. With the two different size indenters, the two elastic parameters E(f) and v(f) of the film can be uniquely determined by the indentation experimental slopes of depth to applied net section stress results. The procedure of determining of the two Norton law parameters CCREEP (f) and nCREEP(f) includes the following steps by the steady indentation rate d. The first step to calculate the creep indentation rate on certain loads of the two different sizes of indenters on a set of assumed values of CCREEP (f) and nCREEP (f). Then to build relationship between the creep indentation rate and the assumed CCREEP(f) and nCREEP(f). With the experimental creep indentation rate to intersect two sets of CCREEP (f) and nCREEP(f), which have the same values of d. The last step is to build the CCREEP(f) and nCREEP(f)curves from the intersection points for the two indenters.These two curves CCREEP and nCREEP(f) will intersect at one point. The axial values of the point are what we want. The procedure presented in the paper to determine the elastic parameters and creep parameters from the indentation experiments can be applied to any material systems.
基金the National Key Research and Development Program of China(2019YFB2203800)the National Natural Science Foundation of China under Grant No.61835008,61905079,and 61905084.
文摘Lithium niobate on insulator(LNOI)is rising as one of the most promising platforms for integrated photonics due to the high-index-contrast and excellent material properties of lithium niobate,such as wideband transparency from visible to mid-infrared,large electro-optic,piezoelectric,and second-order harmonic coefficients.The fast-developing micro-and nanostructuring techniques on LNOI have enabled various structure,devices,systems,and applications.In this contribution,we review the latest developments in this platform,including ultra-high speed electro-optic modulators,optical frequency combs,opto-electro-mechanical system on chip,second-harmonic generation in periodically poled LN waveguides,and efficient edge coupling for LNOI.
基金Project supported by the National Natural Science Foundation of China(Nos.11672265,11202182,and 11621062)the Fundamental Research Funds for the Central Universities(Nos.2016QNA4026 and2016XZZX001-05)the Open Foundation of Zhejiang Provincial Top Key Discipline of Mechanical Engineering
文摘A theoretical model is developed for predicting both conduction and diffusion in thin-film ionic conductors or cables. With the linearized Poisson-Nernst-Planck(PNP)theory, the two-dimensional(2D) equations for thin ionic conductor films are obtained from the three-dimensional(3D) equations by power series expansions in the film thickness coordinate, retaining the lower-order equations. The thin-film equations for ionic conductors are combined with similar equations for one thin dielectric film to derive the 2D equations of thin sandwich films composed of a dielectric layer and two ionic conductor layers. A sandwich film in the literature, as an ionic cable, is analyzed as an example of the equations obtained in this paper. The numerical results show the effect of diffusion in addition to the conduction treated in the literature. The obtained theoretical model including both conduction and diffusion phenomena can be used to investigate the performance of ionic-conductor devices with any frequency.
基金Project supported by the National Natural Science Foundation of China(Grants Nos.61306011,11274366,51272280,11674405,and 11675280)
文摘Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications(RFIDs),etc.Zinc oxide(ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices,owing to their high electrical performances,together with low processing temperatures and good optical transparencies.In this paper,we review recent advances in flexible and transparent thin-film transistors(TFTs) based on ZnO and relevant materials.After a brief introduction,the main progress of the preparation of each component(substrate,electrodes,channel and dielectrics) is summarized and discussed.Then,the effect of mechanical bending on electrical performance is highlighted.Finally,we suggest the challenges and opportunities in future investigations.
基金supported by the European Community's Seventh Framework Program FP7 under the grant agreement no.608555(HiPerCap)
文摘In the development of the composite gas separation membranes for post-combustion CO_2 capture, little attention is focused on the optimization of the membrane supports, which satisfy the conditions of this technology. The primary requirements to the membrane supports are concerned with their high CO_2 permeance. In this work, the membrane supports with desired characteristics were developed as high-permeance gas separation thin film composite(TFC) membranes with the thin defect-free layer from the crosslinked highly permeable polymer, poly[1-(trimethylsilyl)-1-propyne](PTMSP). This layer is insoluble in chloroform and can be used as a gutter layer for the further deposition of the CO_2-selective materials from the organic solvents. Crosslinking of PTMSP was performed using polyethyleneimine(PEI) and poly(ethyleneglycol) diglycidyl ether(PEGDGE) as crosslinking agents. Optimal concentrations of PEI in PTMSP and PEGDGE in methanol were selected in order to diminish the undesirable effect on the final membrane gas transport characteristics. The conditions of the kiss-coating technique for the deposition of the thin defect-free PTMSP-based layer, namely, composition of the casting solution and the speed of movement of the porous commercial microfiltration-grade support, were optimized. The procedure of post-treatment with alcohols and alcohol solutions was shown to be crucial for the improvement of gas permeance of the membranes with the crosslinked PTMSP layer having thickness ranging within 1-2.5 μm. The claimed membranes showed the following characteristics: CO_2 permeance is equal to 50—54 m^3(STP)/(m^2 h bar)(18,500—20,000 GPU), ideal CO_2/N_2 selectivity is 3.6-3.7, and their selective layers are insoluble in chloroform. Thus, the developed highpermeance TFC membranes are considered as a promising supports for further modification by enhanced CO_2 selective layer formation.
文摘A cobalt-iron alloy thin-film electrode-based electrochemical hydrogen-phosphate-ion sensor was prepared by electrodepositing on an Au-coated Al2O3 substrate from an aqueous solution of metal-salts. The use of a cobalt-iron alloy electrode greatly improved the hydrogen-ion sensor response performance, i.e., the sensor worked stably for more than 7 weeks and showed a quick response time of several seconds. Among the cobalt and iron alloy systems tested, the electrodeposited Co58Fe42 thin-film electrode showed the best EMF response characteristics, i.e., the sensor exhibited a linear potentiometric response to hydrogen-phosphate ion at the concentration range between 1.0 × 10–5 and 1.0 × 10–2 M with the slope of –43 mV/decade at pH 5.0 and at 30℃. A sensing mechanism of the Co-based potentiometric hydrogen-phosphate ion sensor was proposed on the basis of results of instrumental analysis.
基金This work was supported by the Competitive Research Program(Award No.NRF-CRP13-2014-02),RIE2020 ASTAR AME IAF-ICP(I1801E0030)Campus for Research Excellence and Technological Enterprise(CREATE)that was supported by the National Research Foundation,Prime Minister’s Office,Singapore+1 种基金Q.W.S.thanks to the Natural Science Foundation of China(52003122)the"Longshan scholar"start-up foundation of NUIST.
文摘Flexible thin-film transistors(TFTs)have attracted wide interest in the development of flexible and wearable displays or sensors.However,the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates.Here,we develop a stable laminated Al_(2)O_(3)/HfO_(2) insulator by atomic layer deposition at a relatively lower temperature of 150℃.A sputtered amorphous indium-gallium-zinc oxide(IGZO)with the stoichiometry of In_(0.37)Ga_(0.20)Zn_(0.18)O_(0.25) is used as the active channel material.The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al_(2)O_(3)/HfO_(2) nanolaminates.Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al_(2)O_(3),crystallized HfO_(2),and the aluminate Al-Hf-O phase,the as-prepared TFTs present the carrier mobilities of 9.7 cm^(2) V^(−1) s^(−1),ON/OFF ratio of-1.3×10^(6),subthreshold voltage of 0.1 V,saturated current up to 0.83 mA,and subthreshold swing of 0.256 V dec^(−1),signifying a high-performance flexible TFT,which simultaneously able to withstand the bending radius of 40 mm.The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60-70%,a temperature of 25-30℃ environment.The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.
