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Simulation of incompressible multiphase flows with complex geometry using etching multiblock method 被引量:1
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作者 Haoran LIU Kai MU Hang DING 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI CSCD 2016年第11期1405-1418,共14页
The incompressible two-phase flows are simulated using combination of an etching multiblock method and a diffuse interface(DI) model, particularly in the complex domain that can be decomposed into multiple rectangular... The incompressible two-phase flows are simulated using combination of an etching multiblock method and a diffuse interface(DI) model, particularly in the complex domain that can be decomposed into multiple rectangular subdomains. The etching multiblock method allows natural communications between the connected subdomains and the efficient parallel computation. The DI model can consider two-phase flows with a large density ratio, and simulate the flows with the moving contact line(MCL) when a geometric formulation of the MCL model is included. Therefore, combination of the etching method and the DI model has potential to deal with a variety of two-phase flows in industrial applications. The performance is examined through a series of numerical experiments. The convergence of the etching method is firstly tested by simulating single-phase flows past a square cylinder, and the method for the multiphase flow simulation is validated by investing drops dripping from a pore. The numerical results are compared with either those from other researchers or experimental data. Good agreement is achieved.The method is also used to investigate the impact of a droplet on a grooved substrate and droplet generation in flow focusing devices. 展开更多
关键词 etching multiblock method complex geometry multiphase flow moving contact line(MCL) MULTIBLOCK
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FIB Secondary Etching Method for Fabrication of Fine CNT Forest Metamaterials 被引量:1
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作者 Adam Pander Akimitsu Hatta Hiroshi Furuta 《Nano-Micro Letters》 SCIE EI CAS 2017年第4期73-80,共8页
Anisotropic materials, like carbon nanotubes(CNTs), are the perfect substitutes to overcome the limitations of conventional metamaterials; however, the successful fabrication of CNT forest metamaterial structures is s... Anisotropic materials, like carbon nanotubes(CNTs), are the perfect substitutes to overcome the limitations of conventional metamaterials; however, the successful fabrication of CNT forest metamaterial structures is still very challenging. In this study, a new method utilizing a focused ion beam(FIB) with additional secondary etching is presented, which can obtain uniform and fine patterning of CNT forest nanostructures for metamaterials and ranging in sizes from hundreds of nanometers to several micrometers. The influence of the FIB processing parameters on the morphology of the catalyst surface and the growth of the CNT forest was investigated, including the removal of redeposited material,decreasing the average surface roughness(from 0.45 to 0.15 nm), and a decrease in the thickness of the Fe catalyst.The results showed that the combination of FIB patterning and secondary etching enabled the growth of highly aligned, highdensity CNT forest metamaterials. The improvement in the quality of single-walled CNTs(SWNTs), defined by the very high G/D peak ratio intensity of 10.47, demonstrated successful fine patterning of CNT forest for the first time. With a FIB patterning depth of 10 nm and a secondary etching of 0.5 nm, a minimum size of 150 nm of CNT forest metamaterials was achieved. The development of the FIB secondary etching method enabled for the first time, the fabrication of SWNT forest metamaterials for the optical and infrared regime, for future applications, e.g., in superlenses, antennas,or thermal metamaterials. 展开更多
关键词 Carbon nanotubes Metamaterial FIB patterning Secondary etching method Chemical vapor deposition
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In-situ Characterization of Non-aqueous Nano-dispersion Systems by Freeze-etching TEM and Comparative Study with Laser Scattering Method
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作者 欧忠文 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2010年第3期432-436,共5页
In-situ characterization of non-aqueous nano-dispersion systems(NANDS) by freeze-etching transmission electron microscope(FETEM) was reported.To improve just-for-once successive rate of specimen preparation and get go... In-situ characterization of non-aqueous nano-dispersion systems(NANDS) by freeze-etching transmission electron microscope(FETEM) was reported.To improve just-for-once successive rate of specimen preparation and get good characterization results,an improving specimen preparation method of freezing etching was developed.Size,distribution and morphology of NANDS were directly visualized.Some information of particle dispersion feature and particle density can also be obtained.Reproductivity of the FETEM characterization is excellent.Comparing with laser scattering method,which is liable to give positive error especially for small size particle anchoring disperser,FETEM characterization can give more accurate measurement of particle size.Moreover,FETEM can give dispersion feature of nanoparticle in non-aqueous medium. 展开更多
关键词 冷冻蚀刻透射电子显微镜 激光散射法 分散系统 纳米颗粒 原位表征 非水介质 粒子密度 样品制备
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Adsorption of CO_(2) on MgAl layered double hydroxides: Effect of intercalated anion and alkaline etching time 被引量:3
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作者 冯艳艳 牛潇迪 +1 位作者 徐永辉 杨文 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第4期542-549,共8页
The adsorption of CO_(2) on MgAl layered double hydroxides(MgAl-LDHs) based adsorbents has been an effective way to capture CO_(2),however the adsorption capacity was hampered due to the pore structure and the dispers... The adsorption of CO_(2) on MgAl layered double hydroxides(MgAl-LDHs) based adsorbents has been an effective way to capture CO_(2),however the adsorption capacity was hampered due to the pore structure and the dispersibility of adsorption active sites.To address the problem,we investigate the effect of intercalated anion and alkaline etching time on the structure,morphology and CO_(2) uptake performances of MgAl-LDHs.MgAl-LDHs are synthesized by the onepot hydrothermal method,followed by alkaline etching of NaOH,and characterized by x-ray diffraction,N_(2) adsorption,scanning electron microscopy and Fourier transform infrared spectroscopy.The CO_(2) adsorption tests of the samples are performed on a thermogravimetric analyzer,and the adsorption data are fitted by the first-order,pseudo-second-order and Elovich models,respectively.The results demonstrate that among the three intercalated samples,MgAl(Cl) using chloride salts as precursors possesses the highest adsorption capacity of CO_(2),owing to high crystallinity and porous structure,while MgAl(Ac) employing acetate salts as precursors displays the lowest CO_(2) uptake because of poor crystallinity,disorderly stacked structure and unsatisfactory pore structure.With regard to alkaline etching,the surface of the treated MgAl(Cl) is partly corroded,thus the specific surface area and pore volume increase,which is conducive to the exposure of adsorption active sites.Correspondingly,the adsorption performance of the alkaline-etched adsorbents is significantly improved,and MgAl(Cl)-6 has the highest CO_(2) uptake.With the alkaline etching time further increasing,the CO_(2) adsorption capacity of MgAl(Cl)-9 sharply decreases,mainly due to the collapse of pore structure and the fragmentized sheet-structure.Hence,the CO_(2) adsorption performance is greatly influenced by alkaline etching time,and appropriate alkaline etching time can facilitate the contact between CO_(2) molecules and the adsorbent. 展开更多
关键词 CO_(2)adsorption Mg Al-LDHs one-pot hydrothermal method intercalated anion alkaline etching
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The Implementation of the Surface Charging Effects in Three-Dimensional Simulations of SiO_(2) Etching Profile Evolution 被引量:1
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作者 Branislav Radjenovic Marija Radmilovic-Radjenovic 《Engineering(科研)》 2014年第1期1-6,共6页
Refined control of etched profile in microelectronic devices during plasma etching process is one of the most important tasks of front-end and back-end microelectronic devices manufacturing technologies. A comprehensi... Refined control of etched profile in microelectronic devices during plasma etching process is one of the most important tasks of front-end and back-end microelectronic devices manufacturing technologies. A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all the points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Laplace equation using finite elements method. Calculations were performed in the case of simplified model of Ar+/CF4 non-equilibrium plasma etching of SiO2. 展开更多
关键词 Plasma etching Level Set method Profile Charging Finite Elements method
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The convergence ball and error analysis of the two-step Secant method
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作者 LIN Rong-fei WU Qing-biao +2 位作者 CHEN Min-hong KHAN Yasir LIU Lu 《Applied Mathematics(A Journal of Chinese Universities)》 SCIE CSCD 2017年第4期397-406,共10页
Under the assumption that the nonlinear operator has Lipschitz continuous divided differences for the first order,we obtain an estimate of the radius of the convergence ball for the two-step secant method.Moreover,we ... Under the assumption that the nonlinear operator has Lipschitz continuous divided differences for the first order,we obtain an estimate of the radius of the convergence ball for the two-step secant method.Moreover,we also provide an error estimate that matches the convergence order of the two-step secant method.At last,we give an application of the proposed theorem. 展开更多
关键词 two-step SECANT method ESTIMATE of RADIUS convergence ball LIPSCHITZ continuous
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Angular Effects on F+ Etching SiC: MD Study
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作者 CHEN Xu TIAN Shuping +5 位作者 HE Pingni ZHAO Chengli SUN Weizhong ZHANG Junyuan CHEN Feng GOU Fujun 《Plasma Science and Technology》 SCIE EI CAS CSCD 2012年第12期1102-1105,共4页
Molecular dynamics(MD) simulations were performed to investigate F+ continuously bombarding SiC surfaces with energies of 100 eV at different incident angles at 300 K.The simulated results show that the steady-state u... Molecular dynamics(MD) simulations were performed to investigate F+ continuously bombarding SiC surfaces with energies of 100 eV at different incident angles at 300 K.The simulated results show that the steady-state uptake of F atoms increases with increasing incident angle.With the steady-state etching established,a Si-C-F reactive layer is formed.It is found that the etching yield of Si is greater than that of C.In the F-containing reaction layer,the SiF species is dominant with incident angles less than 30o.For all incident angles,the CF species is dominant over CF2 and CF3. 展开更多
关键词 碳化硅 蚀刻 MD 入射角度 分子动力学 稳定状态 反应层 CF3
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Preparation of Electrode Array by Electrochemical Etching Based on FEM
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作者 Minghuan WANG Di ZHU Lei WANG 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2008年第6期845-849,共5页
Process technology of multiple cylindrical micro-pins by wire-electrical discharge machining (wire-EDM) and electrochemical etching was presented.A row of rectangular micro-columns were machined by wire-EDM and then m... Process technology of multiple cylindrical micro-pins by wire-electrical discharge machining (wire-EDM) and electrochemical etching was presented.A row of rectangular micro-columns were machined by wire-EDM and then machined into cylindrical shape by electrochemical etching.However,the shape of the multiple electrodes and the consistent sizes of the electrodes row are not easy to be controlled.In the electrochemical process,the shape of the cathode electrode determines the current density distribution on the anode and so the forming of multiple electrodes.This paper proposes a finite element method (FEM) to accurately optimize the electrode profile.The microelectrodes row with uniformity diameters with size from hundreds micrometers to several decades could be fabricated,and mathematical model controlling the shape and diameter of multiple microelectrodes was provided.Furthermore,a good agreement between experimental and theoretical results was confirmed. 展开更多
关键词 电极 电气化学侵蚀 有限元分析 微电极
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Solution of Nonlinear Integro Differential Equations by Two-Step Adomian Decomposition Method (TSAM)
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作者 Maryam Al-Mazmumy Safa O. Almuhalbedi 《International Journal of Modern Nonlinear Theory and Application》 2016年第4期248-255,共8页
The Adomian decomposition method (ADM) can be used to solve a wide range of problems and usually gets the solution in a series form. In this paper, we propose two-step Adomian Decomposition Method (TSAM) for nonlinear... The Adomian decomposition method (ADM) can be used to solve a wide range of problems and usually gets the solution in a series form. In this paper, we propose two-step Adomian Decomposition Method (TSAM) for nonlinear integro-differential equations that will facilitate the calculations. In this modification, compared to the standard Adomian decomposition method, the size of calculations was reduced. This modification also avoids computing Adomian polynomials. Numerical results are given to show the efficiency and performance of this method. 展开更多
关键词 Adomian Decomposition method Nonlinear Volterraintegro-Differential Equations Nonlinear Fredholmintegro-Differential Equations two-step
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氨热法GaN单晶生长的位错密度演变研究
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作者 夏政辉 李腾坤 +6 位作者 任国强 解凯贺 卢文浩 李韶哲 郑树楠 高晓冬 徐科 《人工晶体学报》 CAS 2024年第3期480-486,共7页
氮化镓单晶具有高击穿电压、直接带隙、高饱和电子漂移速率、良好的化学稳定性等特性,在光电子器件和大功率电子器件中有广泛的应用。然而异质外延氮化镓会产生高位错密度,限制了氮化镓基器件的性能发挥。本研究以HVPE-GaN为籽晶,采用... 氮化镓单晶具有高击穿电压、直接带隙、高饱和电子漂移速率、良好的化学稳定性等特性,在光电子器件和大功率电子器件中有广泛的应用。然而异质外延氮化镓会产生高位错密度,限制了氮化镓基器件的性能发挥。本研究以HVPE-GaN为籽晶,采用氨热法生长了氮化镓单晶,利用扫描电子显微镜(SEM),光学显微镜和湿法腐蚀研究了氨热法氮化镓单晶籽晶区至侧向生长区的位错演变。研究结果表明,侧向生长区的氮化镓单晶位错密度明显低于籽晶区,侧向生长超过25μm后,位错密度降低2个数量级。 展开更多
关键词 氮化镓单晶 氨热法 侧向生长 位错密度 腐蚀坑
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不同酸蚀模式与不同粘结剂在恒牙治疗中的应用比较
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作者 曾勇 李科 《粘接》 CAS 2024年第3期107-110,115,共5页
利用显微镜与万能拉伸试验机等设备,分析全酸蚀方法、自酸蚀方法、Gluma磷酸酸蚀法的粘接系统,在年轻恒牙治疗中的粘接残余系数、粘接强度与封闭剂脱落率。结果证明,全酸蚀方法的粘接系统在年轻恒牙治疗时的封闭剂脱落率最小;自酸蚀方... 利用显微镜与万能拉伸试验机等设备,分析全酸蚀方法、自酸蚀方法、Gluma磷酸酸蚀法的粘接系统,在年轻恒牙治疗中的粘接残余系数、粘接强度与封闭剂脱落率。结果证明,全酸蚀方法的粘接系统在年轻恒牙治疗时的封闭剂脱落率最小;自酸蚀方法的粘接系统封闭效果最差。酸蚀时间对全酸蚀方法影响较大,缩短酸蚀时间,可提升年轻恒牙粘接强度。酸蚀时间对Gluma磷酸酸蚀法影响较小;酸蚀时间一致时,全酸蚀方法的粘接强度明显高于Gluma磷酸酸蚀法,说明全酸蚀方法的粘接系统在年轻恒牙治疗中的效果优于Gluma磷酸酸蚀法的粘接系统。酸蚀浓度对不同酸蚀方法的粘接系统在年轻恒压中治疗效果影响均较小;不同酸蚀浓度时,全酸蚀方法的粘接残余系数最高,粘接强度最强。 展开更多
关键词 酸蚀方法 粘接系统 年轻恒牙 自酸蚀 全酸蚀 酸蚀浓度
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基于电化学液膜法腐蚀制备STM钨探针的研究
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作者 马玉麟 丁召 +1 位作者 王一 郭祥 《贵州科学》 2024年第1期90-93,共4页
高质量的探针是保证扫描隧道显微镜(Scanning Tunneling Microscope,STM)4K分辨率的关键。为得到原子级别的探针,实验基于电化学腐蚀原理,使用垂直液膜法制备钨探针。在制备过程中通过控制变量法,研究了腐蚀电压、液膜下钨丝长度等参数... 高质量的探针是保证扫描隧道显微镜(Scanning Tunneling Microscope,STM)4K分辨率的关键。为得到原子级别的探针,实验基于电化学腐蚀原理,使用垂直液膜法制备钨探针。在制备过程中通过控制变量法,研究了腐蚀电压、液膜下钨丝长度等参数对探针质量的影响,实验发现,当使用2 mol/L的NaOH溶液作为液膜时,最佳腐蚀电压为5 V、最佳液膜下钨丝长度为4 mm。该研究为电化学液膜法腐蚀制备钨探针提供了参考依据。 展开更多
关键词 液膜法 钨探针 电化学腐蚀 STM
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Na_(2)O-CaO-SiO_(2)平板玻璃减反射功能化研究
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作者 郝霞 王其琛 +4 位作者 符有杰 李军葛 赵会峰 姜宏 王卓 《硅酸盐通报》 CAS 2024年第4期1366-1373,共8页
随着光伏产业的高速发展,与之配套使用的减反射玻璃重新进入了研究者们的视野。本文采用湿化学二步刻蚀法制备了具有减反射性能的Na_(2)O-CaO-SiO_(2)平板玻璃,采用分光光度计、扫描电子显微镜、原子力显微镜和X射线能谱仪等测试样品的... 随着光伏产业的高速发展,与之配套使用的减反射玻璃重新进入了研究者们的视野。本文采用湿化学二步刻蚀法制备了具有减反射性能的Na_(2)O-CaO-SiO_(2)平板玻璃,采用分光光度计、扫描电子显微镜、原子力显微镜和X射线能谱仪等测试样品的透过率、表面形貌和断面膜层厚度、表面化学成分、耐酸性和硬度,研究了反应温度和反应时间、玻璃膜层结构与透过率的关系。通过使用弱碱性的混合盐溶液对Na_(2)O-CaO-SiO_(2)玻璃表面进行化学刻蚀,使玻璃表面Si—O键断裂,在玻璃表面形成纳米膜层结构,当膜层厚度达到一定厚度时,一定波长的光在玻璃表面发生相消干涉,透过率最高可达到97.8%,刻蚀前后玻璃成分基本无变化,铅笔硬度达到3H。 展开更多
关键词 减反射玻璃 透过率 Na_(2)O-CaO-SiO_(2)平板玻璃 湿化学二步刻蚀法 表面微裂纹 纳米孔
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红外抗反射微纳结构刻蚀制备研究进展
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作者 李雪伍 王红星 +3 位作者 郭伟玲 邢志国 黄艳斐 王海斗 《材料导报》 EI CAS CSCD 2024年第6期162-171,共10页
“蛾眼效应”指光波折射率因蛾眼表面微纳结构在深度方向呈连续性变化,使大部分光被吸收,只有极少被反射的现象。受“蛾眼效应”启发,在材料表面制备微纳结构使其具有独特抗反射性能受到广泛关注,在太阳能电池、光电探测器、光电二极管... “蛾眼效应”指光波折射率因蛾眼表面微纳结构在深度方向呈连续性变化,使大部分光被吸收,只有极少被反射的现象。受“蛾眼效应”启发,在材料表面制备微纳结构使其具有独特抗反射性能受到广泛关注,在太阳能电池、光电探测器、光电二极管和军事隐身等领域有广阔应用前景。本文梳理不同微纳结构抗反射原理,并对红外抗反射结构的不同刻蚀制备方法及其应用进行综述,总结了化学刻蚀、反应离子刻蚀、超快激光刻蚀等红外抗反射结构制备方法的特点以及对抗反射性能的影响,阐述红外抗反射结构在红外探测、红外热成像和隐身等方面的应用,并对抗反射结构制备方法研究方向与未来前景进行展望。 展开更多
关键词 抗反射结构 红外 微纳结构 刻蚀制备
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CaSO_(4)液滴在超疏水表面上的蒸发结晶特性研究
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作者 董立婷 胡丽娜 杜一枝 《表面技术》 EI CAS CSCD 2024年第8期202-209,共8页
目的在铝基底上制备稳定的超疏水表面,研究其表面上硫酸钙液滴的蒸发结晶特性。方法通过简单的化学刻蚀法制备了一种超疏水表面,基于温湿度可控的可视化平台开展固着硫酸钙液滴的蒸发过程实验研究。同时,基于温度和相对湿度,开发了多变... 目的在铝基底上制备稳定的超疏水表面,研究其表面上硫酸钙液滴的蒸发结晶特性。方法通过简单的化学刻蚀法制备了一种超疏水表面,基于温湿度可控的可视化平台开展固着硫酸钙液滴的蒸发过程实验研究。同时,基于温度和相对湿度,开发了多变量拟合二次回归模型来描述其对液滴蒸发速率的影响。结果基底温度为40、50、60℃时,硫酸钙液滴和纯水液滴在亲水铝片表面上的蒸发模式均表现为CCR模式,在超疏水铝片表面上均表现为CCA模式。在超疏水铝片表面,纯水液滴与硫酸钙液滴的蒸发模式略有不同:在蒸发后期,硫酸钙液滴边缘盐分增加,在重力和Marangoni效应作用下,外部逐渐形成盐壳,接触半径呈上升趋势,说明超疏水表面不利于盐滴的钉扎。当蒸发速率较低时,在外部更容易形成盐壳,一旦外部形成盐壳,蒸发机制即发生了变化,液滴内部水分子需要克服盐壳内外的压差,并通过盐壳扩散进一步蒸发。结论通过固着液滴实验验证了硫酸钙液滴的蒸发模式与基底温度无关,而与基底的润湿性有关,并且液滴的蒸发速率随着相对湿度的降低和温度的升高而增大。通过R^(2)=0.9937的多变量拟合二次回归模型,对影响液滴蒸发的因素进行了方差分析,结果表明:在超疏水表面上温度和相对湿度对硫酸钙液滴的蒸发速率均有显著影响。研究成果为矿井水的资源化利用提供了有效的理论支撑。 展开更多
关键词 超疏水表面 化学刻蚀法 盐液滴蒸发 固着液滴法 蒸发速率 接触角 方差分析
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六氟丁二烯的制备工艺研究进展
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作者 陈芳 夏秋阳 +2 位作者 王昊 朱建秀 杜晨峥 《有机氟工业》 CAS 2024年第1期23-27,共5页
六氟丁二烯因其刻蚀精准、绿色环保等优势而备受关注,成为新一代电子刻蚀气体的理想产品。目前已报道的六氟丁二烯制备路线复杂多样,以现有制备方法中涉及到的关键中间体为分类标准对当前主流制备工艺进行归纳,并对现阶段取得的进展展... 六氟丁二烯因其刻蚀精准、绿色环保等优势而备受关注,成为新一代电子刻蚀气体的理想产品。目前已报道的六氟丁二烯制备路线复杂多样,以现有制备方法中涉及到的关键中间体为分类标准对当前主流制备工艺进行归纳,并对现阶段取得的进展展开论述。在此基础上,总结主流制备工艺存在的问题并展望未来可行的技术研发方向。 展开更多
关键词 六氟丁二烯 制备工艺 电子气体 刻蚀 关键中间体
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氟离子选择电极法测定含铜蚀刻废液中氟含量方法探讨
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作者 彭义华 《化学研究与应用》 CAS 2024年第2期361-366,共6页
准确测定含铜蚀刻废液中氟含量是含铜蚀刻废液中铜盐回收的关键,本文就含铜蚀刻废液中氟含量离子选择电极测定方法[1~3]进行探讨与验证。通过样品前处理与试验,离子选择电极一次标准加入法测定下限为0.9mg·L^(-1),离子选择电极标... 准确测定含铜蚀刻废液中氟含量是含铜蚀刻废液中铜盐回收的关键,本文就含铜蚀刻废液中氟含量离子选择电极测定方法[1~3]进行探讨与验证。通过样品前处理与试验,离子选择电极一次标准加入法测定下限为0.9mg·L^(-1),离子选择电极标准曲线法测定下限为1.2 mg·L^(-1);两种方法的相对标准偏差在1.2%~1.7%,两种方法的加标回收率在77%~102%,满足工程应用要求。 展开更多
关键词 含铜蚀刻废液 氟离子选择电极 铜离子络合剂选择 空白扣除方式 累积加标
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A Remarkable Chord Iterative Method for Roots of Uncertain Multiplicity 被引量:1
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作者 I. Fried 《Applied Mathematics》 2016年第11期1207-1214,共9页
In this note we at first briefly review iterative methods for effectively approaching a root of an unknown multiplicity. We describe a first order, then a second order estimate for the multiplicity index m of the appr... In this note we at first briefly review iterative methods for effectively approaching a root of an unknown multiplicity. We describe a first order, then a second order estimate for the multiplicity index m of the approached root. Next we present a second order, two-step method for iteratively nearing a root of an unknown multiplicity. Subsequently, we introduce a novel chord, or a two- step method, not requiring beforehand knowledge of the multiplicity index m of the sought root, nor requiring higher order derivatives of the equilibrium function, which is quadratically convergent for any , and then reverts to superlinear. 展开更多
关键词 Iterative methods Unknown Root Multiplicity two-step methods
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Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method 被引量:2
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作者 汪桂根 张明福 +3 位作者 左洪波 许承海 赫晓东 韩杰才 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 北大核心 2007年第11期1332-1336,共5页
In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sa... In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching,scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101~8.0×102 cm-2,in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally,the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method. 展开更多
关键词 蓝宝石 位错 化学浸蚀 X射线形貌学
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In-depth understanding of ionic liquid assisted perovskite film formation mechanism for two-step perovskite photovoltaics
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作者 Fei Wang Patrick Wai-Keung Fong +12 位作者 Zhiwei Ren Hai-Lun Xia Kang Zhou Kai Wang Jiajie Zhu Xiaoxi Huang Xiao-Yuan Liu Hao Wang Yumeng Shi Haoran Lin Quanyao Zhu Gang Li Hanlin Hu 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2022年第10期599-606,I0015,共9页
Ionic liquids(ILs)have been widely applied in the one-step fabrication of perovskite with noticeable enhancement in the device performance.However,in-depth mechanism of ionic-liquid-assisted perovskite film formation ... Ionic liquids(ILs)have been widely applied in the one-step fabrication of perovskite with noticeable enhancement in the device performance.However,in-depth mechanism of ionic-liquid-assisted perovskite film formation is not well understood for also important two-step perovskite fabrication method,with better control of crystallization behavior.In this work,we introduced ionic liquid methylammonium formate(MAFa)into organic salt to produce perovskite film via a two-step method.Systematic investigations on the influence of MAFa on the perovskite thin film formation mechanism were performed.Ionic liquid is shown to assist lowering the perovskite formation enthalpy upon the density functional theory(DFT)calculation,leading to an accelerated crystallization process evidenced by in-situ UV-Vis absorption measurement.A gradient up-down distribution of ionic liquid has been confirmed by timeof-flight SIMS.Importantly,besides the surface passivation,we found the HCOO-can diffuse into the perovskite crystals to fill up the halide vacancies,resulting in significant reduction of trap states.Uniform perovskite films with significantly larger grains and less defect density were prepared with the help of MAFa IL,and the corresponding device efficiency over 23%was obtained by two-step process with remarkably improved stability.This research work provides an efficient strategy to tune the morphology and opto-electronic properties of perovskite materials via ionic-liquid-assisted two-step fabrication method,which is beneficial for upscaling and application of perovskite photovoltaics. 展开更多
关键词 Halide vacancies Perovskite solar cells two-step method Ionic liquid
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