Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic d...Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic devices.The conventional gas-phase growth techniques,however,are not compatible with direct patterning processes.Similarly,the condensed-phase methods,based on metal oxide deposition and chalcogenization processes,require lengthy processing times and high temperatures.Here,a novel self-limiting laser crystallization process for direct crystallization and patterning of 2D materials is demonstrated.It takes advantage of significant differences between the optical properties of the amorphous and crystalline phases.Pulsed laser deposition is used to deposit a thin layer of stoichiometric amorphous molybdenum disulfide(MoS2)film(∼3 nm)onto the fused silica substrates.A tunable nanosecond infrared(IR)laser(1064 nm)is then employed to couple a precise amount of power and number of pulses into the amorphous materials for controlled crystallization and direct writing processes.The IR laser interaction with the amorphous layer results in fast heating,crystallization,and/or evaporation of the materials within a narrow processing window.However,reduction of the midgap and defect states in the as crystallized layers decreases the laser coupling efficiency leading to higher tolerance to process parameters.The deliberate design of such laser 2D material interactions allows the selflimiting crystallization phenomena to occur with increased quality and a much broader processing window.This unique laser processing approach allows high-quality crystallization,direct writing,patterning,and the integration of various 2D materials into future functional devices.展开更多
This was an outlook on the prediction of the infrared laser potentiality from concentration dependences of the 2F5/2 experimental decay time in Yb3+-doped solid-state crystals mainly on cubic crystals with 99.99% puri...This was an outlook on the prediction of the infrared laser potentiality from concentration dependences of the 2F5/2 experimental decay time in Yb3+-doped solid-state crystals mainly on cubic crystals with 99.99% purity which could be extended to laser ceramics of the same composition.展开更多
A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both thetemperature-independent contributions and the temperature-dependent ones of acoustic branches and optical bran...A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both thetemperature-independent contributions and the temperature-dependent ones of acoustic branches and optical brancheshave been derived. It is found that the temperature-independent contributions are very important, especially at lowtemperature. The total pressure-induced shift (PS) of a level (or spectral line or band) is the algebraic sum of its PSwithout EPI and its PS due to EPI. By means of both the theory for shifts of energy spectra due to EPI and the theoryfor PS of energy spectra, the total PS of R1 line of tunable laser crystal GSGG:Cr3+ at 70 K as well as the ones of itsR1 line, R2 line and U band at 300 K will be successfully calculated and explained in this series of papers.展开更多
By using the re-derived formulae for both line-strength of electricdipole transition and simple J-mixing coefficients within the 4f shell in a rare-earthion, the spectroscopic properties of the luminescent material Eu...By using the re-derived formulae for both line-strength of electricdipole transition and simple J-mixing coefficients within the 4f shell in a rare-earthion, the spectroscopic properties of the luminescent material Eu3+ =Y2O3 and laser crystals Tb3+:=YAlO3 and Nd3+:YVO4, are investigated in detail. On the basis of three fitting Ω parameters and the effective reduced matrix elements, the spectral linestrengths, spontaneous emission probabilities, fluorescent branching ratios and lifetimeare calculated. The better agreement between theoretical results and experimental dataindicates the importance of J-mixing in the spectroscopic study of laser crystals.展开更多
Eye-safe 1.5～1.6 μm lasers have important applications in optical fiber communi- cation, medicine, laser-range-finding, lidar, etc. Er3+ and Yb3+ co-doped crystal pumped by diode laser around 976 nm is an attractive...Eye-safe 1.5～1.6 μm lasers have important applications in optical fiber communi- cation, medicine, laser-range-finding, lidar, etc. Er3+ and Yb3+ co-doped crystal pumped by diode laser around 976 nm is an attractive method for obtaining 1.5～1.6 μm laser in compact device with high output beam quality. In this paper, the recent research and progress of several important Er3+ and Yb3+ co-doped laser crystals at 1.5～1.6 μm in authors’ lab are reported.展开更多
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 c...A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 cm^2/V·s and on/off current ration of 1×10^7,They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization.We also analyzed the structure of the laser crysallized poly-Si thin film and calculated the ellipsometric spectra.The calculated results are in good agreement with the measured results.展开更多
By means of both a theory for pressure-induced shifts(PS) energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction(EPIP.the pure electronic PS and the PS due to EPI of R1 line,R2 lin...By means of both a theory for pressure-induced shifts(PS) energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction(EPIP.the pure electronic PS and the PS due to EPI of R1 line,R2 line,and U band of GSGG:Cr^3+ at 300 K have been calculated,respectively.The calcualted results are in good agreement with all the experimental data.Their physical origins have also been explained.It is found that the mixingdegree of t2^2(^3T1)e^4T2) and |t2^3 3E>base-wavefunctions in the wavefunctions of R1 level of GSGG:Cr^3+ at 300K is remarkable under normal pressure,and the mixing-degree rapidly decreases with increasing pressure.The change of the mixing-degree with pressure plays a key role not only for the pure electronic'PS of R1 line and R2 line but also the PS of R1 line and R2 line due to EPI.The pressure-dependent behaviors of the pure electronic 'PS of R1 line(or R2 line) and the PS of R1 line(or R2 line) due to EPI are quite different.It is the combined effect of them that gives rise to the total PS of R1 line(or R2 line).In the range of about 15 kar-45kbar,the mergence and /or order-reversal between t2^2(3T1)e^4T2 levels and t2^32T1 levels take place,which cause the fluctuation of the rate of PS for t2^2(3T1)e^4T2(or t2^32T1) with pressure,At 300K,both the temperature-dependent contribution to R1 line(Or R2 line or U band) from EPI and the temperature-independent one are important.展开更多
With the strong-field scheme and trigonal bases, the complete d3 energy matrix in a trigonally distorted cubic-field has been constructed. By diagonalizing this matrix, the normal-pressure energy spectra and wavefunct...With the strong-field scheme and trigonal bases, the complete d3 energy matrix in a trigonally distorted cubic-field has been constructed. By diagonalizing this matrix, the normal-pressure energy spectra and wavefunctions of GSGG:Cr3+ at 70 K and 300 K have been calculated without the electron-phonon interaction (EPI), respectively. Further, the contributions to energy spectra from EPI at two temperatures have also been calculated, where temperatureindependent terms of EPI are found to be dominant. The sum of aforementioned two parts gives rise to the total energy spectrum. The calculated results are in good agreement with all the optical-spectral experimental data and the experimental results of g||(R1) and g⊥(R1). It is found that the contribution from EPI to R1 line of GSGG:Cr3+ with taking into account spin-orbit interaction (Hso) and trigonal field (Vtrig) is much larger than the one with neglecting Hso and Vtrig, and accordingly it is essential for the calculation of the EPI effect to take first into account Hso and Vtrig. The admixture of base-wavefunctions, |t32 2E) and |t22(3T1)e4T2 ), the average energy separation △＝ E[t22 (3T1)e4T2]-E[t32 2E] and their variations with temperature have been calculated and discussed.展开更多
A new laser crystal Nd^(3+):NaY(WO_(4))_(2) up to 10x10x20mm with low threshold can be obtained from the system of(WO_(4))_(3)-Na_(2)WO_(4) by top-seeded solution growth method.The crystal rod of Ф2,5×5mm was pu...A new laser crystal Nd^(3+):NaY(WO_(4))_(2) up to 10x10x20mm with low threshold can be obtained from the system of(WO_(4))_(3)-Na_(2)WO_(4) by top-seeded solution growth method.The crystal rod of Ф2,5×5mm was pumped by xenon Hashlamp and 1.06/zm laser output was gained.Using a D/max-rA type diflractometer,the x-ray powder diffraction data of NaY(WO_(4))_(2) were obtained.展开更多
By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts ofenergy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of...By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts ofenergy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of R1 line ofGSGG:Cr3+ at 70 K have been calculated, respectively. Their physical origins have been revealed. It is found that theremarkable under the normal pressure, and the degree of the admixture rapidly decreases with increasing pressure. Thechange of the degree of the admixture with the pressure plays a key role for not only the pure electronic PS of R1 line butalso the PS ofR1 line due to EPL The detailed calculations and analyses show that the pressure-dependent behaviors ofthe pure electronic PS of R1 line and the PS of R1 line due to EPI are quite different. It is the combined effect of themthat gives rise to the total PS of R1 line, which has satisfactorily explained the experimental data (including a reversal ofPS of R1 line). In contributions to PS of R1 line due to EPI at 70 K, the temperature-independent contribution is muchlarger than the temperature-dependent contribution. The former results from the interaction between the zero-pointvibration of the lattice and localized electronic state.展开更多
BaY2F8 crystals had a relatively low symmetry, and its XRD data showed that those strong diffractions occurred in a narrow angle range, so it was difficult to orientate the single crystals of BaY2F8. In this paper, ba...BaY2F8 crystals had a relatively low symmetry, and its XRD data showed that those strong diffractions occurred in a narrow angle range, so it was difficult to orientate the single crystals of BaY2F8. In this paper, based on the structure characteristics and XRD data, the crystal habit of BaY2F8 was analyzed. The strong bond in crystal structure of BaY2F8 was Y-F2-Y, which stretched to the shape of chain along the direction of [001]. And this was an advantaged direction for the crystal growth. The steady shapes of BaY2F8 were composed of rhombic prism {130} and {021}. The crystal showed an axial habit in the direction of [001]. The analysis of the crystal slice obtained by temperature gradient technique verified the above conclusion. The BaY2F8 crystal was grown by compulsive methods such as Czochralski method.展开更多
We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr:GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr:GYSGG crystal is clo...We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr:GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr:GYSGG crystal is close to zero in the 968 nm pumping and 2.7-3 μm laser wavelength regions. The lifetimes of the upper and lower levels show faint decreases after gamma-ray irradiation. The maximum output powers of 542 and 526 mW with the slope efficiencies of 17.7% and 17.0% are obtained, respectively, on the GYSGG/Er,Pr:GYSGG composite crystal before and after the gammaray irradiation. These results suggest that Er,Pr:GYSGG crystal as a laser gain medium possesses a distinguished antiradiation ability for application in space and radiant environments.展开更多
The Czochralski growth of large high-quality crystal Nd:La_(2)Be_(2)O_(5)(Nd:BEL)has been investigated.The Nd absorption in lanthanum beryllate(BEL)is broader and more intense than in YAG in the spectra region of 805 ...The Czochralski growth of large high-quality crystal Nd:La_(2)Be_(2)O_(5)(Nd:BEL)has been investigated.The Nd absorption in lanthanum beryllate(BEL)is broader and more intense than in YAG in the spectra region of 805 to 820nm.In particular,Nd:BEL has greater energy storage capacity of ability of higher levels of Nd-doping.BEL might outperform YAG as a host for diode-pumped Nd laser.展开更多
β-Ga2O3∶Cr single crystals have potential applications for tunable laser. In β-Ga2O3 crystal structure Cr3+ ions are in octahedron other than tetrahedron. So the Cr3+ ions are influenced by low field of β-Ga2O3 th...β-Ga2O3∶Cr single crystals have potential applications for tunable laser. In β-Ga2O3 crystal structure Cr3+ ions are in octahedron other than tetrahedron. So the Cr3+ ions are influenced by low field of β-Ga2O3 that results the 4T2 to 4A2 transition and show broad emission around 690 nm. β-Ga2O3 single crystals doped with different Cr3+ concentrations were grown by floating zone technique. Their absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were calculated based on the absorption spectra.展开更多
A ligand—field calculation has been performed on laser crystal LiNdP<sub>4</sub>O<sub>12</sub> with C<sub>2v</sub> point group. The parameters of ligand field of this crystal is ob...A ligand—field calculation has been performed on laser crystal LiNdP<sub>4</sub>O<sub>12</sub> with C<sub>2v</sub> point group. The parameters of ligand field of this crystal is obtained and discussed. The calculated Stark sublevels are in good agreement with the enperimental values within 6.7 cm<sup>-1</sup>.展开更多
We observe the phenomenon of priority oscillation of the unexpected σ -polarization in high-power Nd:YVO 4 ring laser. The severe thermal lens of the σ -polarized lasing, compared with the π-polarized lasing, is th...We observe the phenomenon of priority oscillation of the unexpected σ -polarization in high-power Nd:YVO 4 ring laser. The severe thermal lens of the σ -polarized lasing, compared with the π-polarized lasing, is the only reason for the phenomenon. By designing a wedge Nd:YVO 4 crystal as the gain medium, the unexpected σ -polarization is completely suppressed in the entire range of pump powers, and the polarization stability of the expected π-polarized output is enhanced. With the output power increasing from threshold to the maximum power, no σ -polarization lasing is observed. As a result, 25.3 W of stable single-frequency laser output at 532 nm is experimentally demonstrated.展开更多
Monochromatic x-ray imaging is an essential method for plasma diagnostics related to density information.Large-field high-resolution monochromatic imaging of a He-like iron(Fe XXV)Kαcharacteristic line(6.701 keV)for ...Monochromatic x-ray imaging is an essential method for plasma diagnostics related to density information.Large-field high-resolution monochromatic imaging of a He-like iron(Fe XXV)Kαcharacteristic line(6.701 keV)for laser plasma diagnostics was achieved using a developed toroidal crystal x-ray imager.A high-index crystal orientation Ge(531)wafer with a Bragg angle of 75.37°and the toroidal substrate were selected to obtain sufficient diffraction efficiency and compensate for astigmatism under oblique incidence.A precise offline assembly method of the toroidal crystal imager based on energy substitution was proposed,and a spatial resolution of 3-7μm was obtained by toroidal crystal imaging of a 600 line-pairs/inch Au grid within an object field of view larger than 1.0 mm.The toroidal crystal x-ray imager has been successfully tested via side-on backlight imaging experiments of the sinusoidal modulation target and a 1000 line-pairs/inch Au grid with a linewidth of 5μm using an online alignment method based on dual positioning balls to indicate the target and backlighter.This paper describes the optical design,adjustment method,and experimental results of a toroidal crystal system in a laboratory and laser facility.展开更多
The high harmonic generation(HHG)by few-cycle laser pulses is essential for research in strong-field solid-state physics.Through comparison of high harmonic spectra of solids generated by laser pulses with varying dur...The high harmonic generation(HHG)by few-cycle laser pulses is essential for research in strong-field solid-state physics.Through comparison of high harmonic spectra of solids generated by laser pulses with varying durations,we discovered that lasers with good dispersion compensation are capable of producing a broad spectrum of high harmonics.As the pulse duration is further compressed,several interference peaks appear in the broad spectrum.Moreover,we conducted simulations using the semiconductor Bloch equation,considering the effect of Berry curvature,to better understand this process.Our work provides a valuable approach for studying HHG by few-cycle laser pulses in solid materials,expanding the application of HHG in attosecond physics.展开更多
基金This work is supported by the Intermural Grant Program(IGP)at Auburn University.
文摘Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic devices.The conventional gas-phase growth techniques,however,are not compatible with direct patterning processes.Similarly,the condensed-phase methods,based on metal oxide deposition and chalcogenization processes,require lengthy processing times and high temperatures.Here,a novel self-limiting laser crystallization process for direct crystallization and patterning of 2D materials is demonstrated.It takes advantage of significant differences between the optical properties of the amorphous and crystalline phases.Pulsed laser deposition is used to deposit a thin layer of stoichiometric amorphous molybdenum disulfide(MoS2)film(∼3 nm)onto the fused silica substrates.A tunable nanosecond infrared(IR)laser(1064 nm)is then employed to couple a precise amount of power and number of pulses into the amorphous materials for controlled crystallization and direct writing processes.The IR laser interaction with the amorphous layer results in fast heating,crystallization,and/or evaporation of the materials within a narrow processing window.However,reduction of the midgap and defect states in the as crystallized layers decreases the laser coupling efficiency leading to higher tolerance to process parameters.The deliberate design of such laser 2D material interactions allows the selflimiting crystallization phenomena to occur with increased quality and a much broader processing window.This unique laser processing approach allows high-quality crystallization,direct writing,patterning,and the integration of various 2D materials into future functional devices.
文摘This was an outlook on the prediction of the infrared laser potentiality from concentration dependences of the 2F5/2 experimental decay time in Yb3+-doped solid-state crystals mainly on cubic crystals with 99.99% purity which could be extended to laser ceramics of the same composition.
基金Project supported by the National High Technology Development Program of China （Grant No 2002AA303250） and by the National Natural Science Foundation of China （Grant No 60576056）.
文摘A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both thetemperature-independent contributions and the temperature-dependent ones of acoustic branches and optical brancheshave been derived. It is found that the temperature-independent contributions are very important, especially at lowtemperature. The total pressure-induced shift (PS) of a level (or spectral line or band) is the algebraic sum of its PSwithout EPI and its PS due to EPI. By means of both the theory for shifts of energy spectra due to EPI and the theoryfor PS of energy spectra, the total PS of R1 line of tunable laser crystal GSGG:Cr3+ at 70 K as well as the ones of itsR1 line, R2 line and U band at 300 K will be successfully calculated and explained in this series of papers.
文摘By using the re-derived formulae for both line-strength of electricdipole transition and simple J-mixing coefficients within the 4f shell in a rare-earthion, the spectroscopic properties of the luminescent material Eu3+ =Y2O3 and laser crystals Tb3+:=YAlO3 and Nd3+:YVO4, are investigated in detail. On the basis of three fitting Ω parameters and the effective reduced matrix elements, the spectral linestrengths, spontaneous emission probabilities, fluorescent branching ratios and lifetimeare calculated. The better agreement between theoretical results and experimental dataindicates the importance of J-mixing in the spectroscopic study of laser crystals.
基金Supported by the National Natural Science Foundation of China (No. 50590405 and 50802094)the Major Programs of the Chinese Academy of Sciences (No. SZD08001-1)+1 种基金the Natural Science Foundation of Fujian Province (No. 2008J0173)the Knowledge Innovation Program of the Chinese Academy of Sciences
文摘Eye-safe 1.5～1.6 μm lasers have important applications in optical fiber communi- cation, medicine, laser-range-finding, lidar, etc. Er3+ and Yb3+ co-doped crystal pumped by diode laser around 976 nm is an attractive method for obtaining 1.5～1.6 μm laser in compact device with high output beam quality. In this paper, the recent research and progress of several important Er3+ and Yb3+ co-doped laser crystals at 1.5～1.6 μm in authors’ lab are reported.
文摘A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 cm^2/V·s and on/off current ration of 1×10^7,They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization.We also analyzed the structure of the laser crysallized poly-Si thin film and calculated the ellipsometric spectra.The calculated results are in good agreement with the measured results.
文摘By means of both a theory for pressure-induced shifts(PS) energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction(EPIP.the pure electronic PS and the PS due to EPI of R1 line,R2 line,and U band of GSGG:Cr^3+ at 300 K have been calculated,respectively.The calcualted results are in good agreement with all the experimental data.Their physical origins have also been explained.It is found that the mixingdegree of t2^2(^3T1)e^4T2) and |t2^3 3E>base-wavefunctions in the wavefunctions of R1 level of GSGG:Cr^3+ at 300K is remarkable under normal pressure,and the mixing-degree rapidly decreases with increasing pressure.The change of the mixing-degree with pressure plays a key role not only for the pure electronic'PS of R1 line and R2 line but also the PS of R1 line and R2 line due to EPI.The pressure-dependent behaviors of the pure electronic 'PS of R1 line(or R2 line) and the PS of R1 line(or R2 line) due to EPI are quite different.It is the combined effect of them that gives rise to the total PS of R1 line(or R2 line).In the range of about 15 kar-45kbar,the mergence and /or order-reversal between t2^2(3T1)e^4T2 levels and t2^32T1 levels take place,which cause the fluctuation of the rate of PS for t2^2(3T1)e^4T2(or t2^32T1) with pressure,At 300K,both the temperature-dependent contribution to R1 line(Or R2 line or U band) from EPI and the temperature-independent one are important.
文摘With the strong-field scheme and trigonal bases, the complete d3 energy matrix in a trigonally distorted cubic-field has been constructed. By diagonalizing this matrix, the normal-pressure energy spectra and wavefunctions of GSGG:Cr3+ at 70 K and 300 K have been calculated without the electron-phonon interaction (EPI), respectively. Further, the contributions to energy spectra from EPI at two temperatures have also been calculated, where temperatureindependent terms of EPI are found to be dominant. The sum of aforementioned two parts gives rise to the total energy spectrum. The calculated results are in good agreement with all the optical-spectral experimental data and the experimental results of g||(R1) and g⊥(R1). It is found that the contribution from EPI to R1 line of GSGG:Cr3+ with taking into account spin-orbit interaction (Hso) and trigonal field (Vtrig) is much larger than the one with neglecting Hso and Vtrig, and accordingly it is essential for the calculation of the EPI effect to take first into account Hso and Vtrig. The admixture of base-wavefunctions, |t32 2E) and |t22(3T1)e4T2 ), the average energy separation △＝ E[t22 (3T1)e4T2]-E[t32 2E] and their variations with temperature have been calculated and discussed.
文摘A new laser crystal Nd^(3+):NaY(WO_(4))_(2) up to 10x10x20mm with low threshold can be obtained from the system of(WO_(4))_(3)-Na_(2)WO_(4) by top-seeded solution growth method.The crystal rod of Ф2,5×5mm was pumped by xenon Hashlamp and 1.06/zm laser output was gained.Using a D/max-rA type diflractometer,the x-ray powder diffraction data of NaY(WO_(4))_(2) were obtained.
文摘By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts ofenergy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of R1 line ofGSGG:Cr3+ at 70 K have been calculated, respectively. Their physical origins have been revealed. It is found that theremarkable under the normal pressure, and the degree of the admixture rapidly decreases with increasing pressure. Thechange of the degree of the admixture with the pressure plays a key role for not only the pure electronic PS of R1 line butalso the PS ofR1 line due to EPL The detailed calculations and analyses show that the pressure-dependent behaviors ofthe pure electronic PS of R1 line and the PS of R1 line due to EPI are quite different. It is the combined effect of themthat gives rise to the total PS of R1 line, which has satisfactorily explained the experimental data (including a reversal ofPS of R1 line). In contributions to PS of R1 line due to EPI at 70 K, the temperature-independent contribution is muchlarger than the temperature-dependent contribution. The former results from the interaction between the zero-pointvibration of the lattice and localized electronic state.
基金the Natural Science Foundation of Tianjin, China (07JCZDJC00600, 07JCYBJC06000)
文摘BaY2F8 crystals had a relatively low symmetry, and its XRD data showed that those strong diffractions occurred in a narrow angle range, so it was difficult to orientate the single crystals of BaY2F8. In this paper, based on the structure characteristics and XRD data, the crystal habit of BaY2F8 was analyzed. The strong bond in crystal structure of BaY2F8 was Y-F2-Y, which stretched to the shape of chain along the direction of [001]. And this was an advantaged direction for the crystal growth. The steady shapes of BaY2F8 were composed of rhombic prism {130} and {021}. The crystal showed an axial habit in the direction of [001]. The analysis of the crystal slice obtained by temperature gradient technique verified the above conclusion. The BaY2F8 crystal was grown by compulsive methods such as Czochralski method.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB1102301)the National Natural Science Foundation of China(Grant Nos.51272254,61405206,and 51502292)the Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology,Electronic Engineering Institute,China(Grant No.SKL2015KF01)
文摘We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr:GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr:GYSGG crystal is close to zero in the 968 nm pumping and 2.7-3 μm laser wavelength regions. The lifetimes of the upper and lower levels show faint decreases after gamma-ray irradiation. The maximum output powers of 542 and 526 mW with the slope efficiencies of 17.7% and 17.0% are obtained, respectively, on the GYSGG/Er,Pr:GYSGG composite crystal before and after the gammaray irradiation. These results suggest that Er,Pr:GYSGG crystal as a laser gain medium possesses a distinguished antiradiation ability for application in space and radiant environments.
文摘The Czochralski growth of large high-quality crystal Nd:La_(2)Be_(2)O_(5)(Nd:BEL)has been investigated.The Nd absorption in lanthanum beryllate(BEL)is broader and more intense than in YAG in the spectra region of 805 to 820nm.In particular,Nd:BEL has greater energy storage capacity of ability of higher levels of Nd-doping.BEL might outperform YAG as a host for diode-pumped Nd laser.
基金Project supported by the National Natural Science Foundation of China (50472032) and Hundred Talents Program of Chinese Academy of Sciences
文摘β-Ga2O3∶Cr single crystals have potential applications for tunable laser. In β-Ga2O3 crystal structure Cr3+ ions are in octahedron other than tetrahedron. So the Cr3+ ions are influenced by low field of β-Ga2O3 that results the 4T2 to 4A2 transition and show broad emission around 690 nm. β-Ga2O3 single crystals doped with different Cr3+ concentrations were grown by floating zone technique. Their absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were calculated based on the absorption spectra.
文摘A ligand—field calculation has been performed on laser crystal LiNdP<sub>4</sub>O<sub>12</sub> with C<sub>2v</sub> point group. The parameters of ligand field of this crystal is obtained and discussed. The calculated Stark sublevels are in good agreement with the enperimental values within 6.7 cm<sup>-1</sup>.
基金supported by the National High Technology Research and Development Program of China(Grant No.2011AA030203)the National Basic Research Program of China(Grant No.2010CB923101)+1 种基金the National Natural Science Foundation of China(Grant No.61008001)the Natural Science Foundation of Shanxi Province,China(Grant No.2011021003-2)
文摘We observe the phenomenon of priority oscillation of the unexpected σ -polarization in high-power Nd:YVO 4 ring laser. The severe thermal lens of the σ -polarized lasing, compared with the π-polarized lasing, is the only reason for the phenomenon. By designing a wedge Nd:YVO 4 crystal as the gain medium, the unexpected σ -polarization is completely suppressed in the entire range of pump powers, and the polarization stability of the expected π-polarized output is enhanced. With the output power increasing from threshold to the maximum power, no σ -polarization lasing is observed. As a result, 25.3 W of stable single-frequency laser output at 532 nm is experimentally demonstrated.
基金Supported by the National Natural Science Foundation of China under Grant No 90301009, 60571008, 60471021, and 10374049, the National Key Basic Research and Development Programme of China under Grant No 2001CB610503, and the Natural Science Foundation of Jiangsu Province （DK 20042111）.
文摘我们报导结晶化和非结晶的 Si 的光致发光(PL ) 性质: H/SiNx : H 多层(ML ) 电影由一步一步的激光退火对待。结果 ofRaman 大小证明 nanocrystalline Si (nc-Si ) 谷物在 a-Si 被形成: 在抑制生长机制下面的 H 层。有谷物尺寸的 PL 山峰的蓝移动被观察并且能被归因于量监禁效果。为比较，我们也报导 a-Si 的结晶化和 PL : H/SiNx : 由正常一步舞处理的 H ML 样品。这个方法 ofstep-by-step 激光处理将是一个候选人在非结晶的 Si 使 nc-Si 成为量点: H/SiNx : HML 作为在微洞的活跃的层。
基金National Natural Science Foundation of China(No.11805212)National Key Research and Development Program of China(No.2019YFE03080200)。
文摘Monochromatic x-ray imaging is an essential method for plasma diagnostics related to density information.Large-field high-resolution monochromatic imaging of a He-like iron(Fe XXV)Kαcharacteristic line(6.701 keV)for laser plasma diagnostics was achieved using a developed toroidal crystal x-ray imager.A high-index crystal orientation Ge(531)wafer with a Bragg angle of 75.37°and the toroidal substrate were selected to obtain sufficient diffraction efficiency and compensate for astigmatism under oblique incidence.A precise offline assembly method of the toroidal crystal imager based on energy substitution was proposed,and a spatial resolution of 3-7μm was obtained by toroidal crystal imaging of a 600 line-pairs/inch Au grid within an object field of view larger than 1.0 mm.The toroidal crystal x-ray imager has been successfully tested via side-on backlight imaging experiments of the sinusoidal modulation target and a 1000 line-pairs/inch Au grid with a linewidth of 5μm using an online alignment method based on dual positioning balls to indicate the target and backlighter.This paper describes the optical design,adjustment method,and experimental results of a toroidal crystal system in a laboratory and laser facility.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.91850209 and 11974416)。
文摘The high harmonic generation(HHG)by few-cycle laser pulses is essential for research in strong-field solid-state physics.Through comparison of high harmonic spectra of solids generated by laser pulses with varying durations,we discovered that lasers with good dispersion compensation are capable of producing a broad spectrum of high harmonics.As the pulse duration is further compressed,several interference peaks appear in the broad spectrum.Moreover,we conducted simulations using the semiconductor Bloch equation,considering the effect of Berry curvature,to better understand this process.Our work provides a valuable approach for studying HHG by few-cycle laser pulses in solid materials,expanding the application of HHG in attosecond physics.
