A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of dis...A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.展开更多
Color filters are produced using semiconductor production techniques although problems with low yield remain to be addressed. This study presents a new means of selective removal using excimer irradiation, chemical et...Color filters are produced using semiconductor production techniques although problems with low yield remain to be addressed. This study presents a new means of selective removal using excimer irradiation, chemical etching, or electrochemical machining on the fifth generation TFT LCDs. The selective removal of microstructure layers from the color filter surface of an optoelectronic flat panel display, as well as complete removal of the ITO thin-films, RGB layer, or resin black matrix (BM) layer from the substrate is possible. Individual defective film layers can be removed, or all films down to the Cr layer or bare glass can be completely eliminated. Experimental results demonstrate that defective ITO thin-films, RGB layers, or the resin BM layer can now be recycled with a great precision. When the ITO or RGB layer proves difficult to remove, excimer light can be used to help with removal. During this recycling process, the use of 225 nm excimer irradiation before chemical etching, or electrochemical machining, makes removal of stubborn film residues easy, effectively improving the quality of recycled color filters and reducing fabrication cost.展开更多
A reuse fabrication module using micro electroetching as a precision machining process with a new design of a slant-form tool to remove the defective indium-tin-oxide （ITO） nanostructure from the optical polyethylen...A reuse fabrication module using micro electroetching as a precision machining process with a new design of a slant-form tool to remove the defective indium-tin-oxide （ITO） nanostructure from the optical polyethyleneterephthalate （PET） surfaces of digital paper display is presented in current studies. The low yield of ITO thin film deposition is an important factor in optoelectronic semiconductor production. The adopted precision reuse process requires only a short period of time to remove the ITO nanostructure easily and cleanly, which is based on technical and economical considerations and is highly efficient. In the current experiment, a large inclined angle of the cathode and a small end radius of the anode take less time for the same amount of ITO removal. A higher feed rate of the optical PET diaphragm combines with enough electric power to drive fast micro electroetching. A small rotational diameter of the anode accompanied by a small width of the cathode corresponds to a higher removal rate for the ITO nanostructure. A pulsed direct current can improve the effect of dreg discharge and is advantageous to couple this current with the fast feed rate of the workpiece. This improvement is associated with an increase in current rating. High rotational speed of the slant-form tool can improve the effect of dregs discharge and is advantageous to associate with the fast feed rate of the workpiece （optical PET diaphragm）.展开更多
A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3 SnO2 thin film from the surfaces of digital paper display was presented.The etching effect improves t...A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3 SnO2 thin film from the surfaces of digital paper display was presented.The etching effect improves that the number of the round-balls decreases for promoting the concentration of electric power and increasing discharge space.Using a small size of the round-ball tool takes less time for the same amount of In2O3 SnO 2 layer removal since the effect of MECM is easily developed for supplying of sufficient electrochemical power.A higher feed rate of the poly ethylene terephthalate (PET) diaphragm combines with enough electric power to drive fast etching rate.A pulsed direct current can improve the effect of dreg discharge and is advantageous to couple this current with the fast feed rate of the workpiece.Through the ultra-precise etching of In2O 3 SnO2,the optoelectronic semiconductor industry can effectively reuse the defective products,reducing production costs.This precision etching process is of high efficiency and requires only a short period of time to remove the In2O3 SnO2 nanostructures.展开更多
基金supported by BEN TEN THECO.,and National Science Council,under contract 96-2622-E-152-001-CC397-2410-H-152-016
文摘A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.
基金supported by the BEN TEN CO., and National Science Council contracts 98-2221-E-152-001 and 99-2221-E-152-001
文摘Color filters are produced using semiconductor production techniques although problems with low yield remain to be addressed. This study presents a new means of selective removal using excimer irradiation, chemical etching, or electrochemical machining on the fifth generation TFT LCDs. The selective removal of microstructure layers from the color filter surface of an optoelectronic flat panel display, as well as complete removal of the ITO thin-films, RGB layer, or resin black matrix (BM) layer from the substrate is possible. Individual defective film layers can be removed, or all films down to the Cr layer or bare glass can be completely eliminated. Experimental results demonstrate that defective ITO thin-films, RGB layers, or the resin BM layer can now be recycled with a great precision. When the ITO or RGB layer proves difficult to remove, excimer light can be used to help with removal. During this recycling process, the use of 225 nm excimer irradiation before chemical etching, or electrochemical machining, makes removal of stubborn film residues easy, effectively improving the quality of recycled color filters and reducing fabrication cost.
基金supported by the National Science Council, Contract Nos. 97-2410-H-152-016 and 99-2221-E-152-001
文摘A reuse fabrication module using micro electroetching as a precision machining process with a new design of a slant-form tool to remove the defective indium-tin-oxide （ITO） nanostructure from the optical polyethyleneterephthalate （PET） surfaces of digital paper display is presented in current studies. The low yield of ITO thin film deposition is an important factor in optoelectronic semiconductor production. The adopted precision reuse process requires only a short period of time to remove the ITO nanostructure easily and cleanly, which is based on technical and economical considerations and is highly efficient. In the current experiment, a large inclined angle of the cathode and a small end radius of the anode take less time for the same amount of ITO removal. A higher feed rate of the optical PET diaphragm combines with enough electric power to drive fast micro electroetching. A small rotational diameter of the anode accompanied by a small width of the cathode corresponds to a higher removal rate for the ITO nanostructure. A pulsed direct current can improve the effect of dreg discharge and is advantageous to couple this current with the fast feed rate of the workpiece. This improvement is associated with an increase in current rating. High rotational speed of the slant-form tool can improve the effect of dregs discharge and is advantageous to associate with the fast feed rate of the workpiece （optical PET diaphragm）.
基金Project(100-2221-E-152-003)supported by National Science Council
文摘A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3 SnO2 thin film from the surfaces of digital paper display was presented.The etching effect improves that the number of the round-balls decreases for promoting the concentration of electric power and increasing discharge space.Using a small size of the round-ball tool takes less time for the same amount of In2O3 SnO 2 layer removal since the effect of MECM is easily developed for supplying of sufficient electrochemical power.A higher feed rate of the poly ethylene terephthalate (PET) diaphragm combines with enough electric power to drive fast etching rate.A pulsed direct current can improve the effect of dreg discharge and is advantageous to couple this current with the fast feed rate of the workpiece.Through the ultra-precise etching of In2O 3 SnO2,the optoelectronic semiconductor industry can effectively reuse the defective products,reducing production costs.This precision etching process is of high efficiency and requires only a short period of time to remove the In2O3 SnO2 nanostructures.
