Fault diagnosis of traction systems is important for the safety operation of high-speed trains.Long-term operation of the trains will degrade the performance of systems,which decreases the fault detection accuracy.To ...Fault diagnosis of traction systems is important for the safety operation of high-speed trains.Long-term operation of the trains will degrade the performance of systems,which decreases the fault detection accuracy.To solve this problem,this paper proposes a fault detection method developed by a Generalized Autoencoder(GAE)for systems with performance degradation.The advantage of this method is that it can accurately detect faults when the traction system of high-speed trains is affected by performance degradation.Regardless of the probability distribution,it can handle any data,and the GAE has extremely high sensitivity in anomaly detection.Finally,the effectiveness of this method is verified through the Traction Drive Control System(TDCS)platform.At different performance degradation levels,our method’s experimental results are superior to traditional methods.展开更多
Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation ...Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.展开更多
Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)...Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are investigated.The drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton irradiation.When the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most serious.In the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase most.By comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation damage.The results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.展开更多
The cavitation in axial piston pumps threatens the reliability and safety of the overall hydraulic system.Vibration signal can reflect the cavitation conditions in axial piston pumps and it has been combined with mach...The cavitation in axial piston pumps threatens the reliability and safety of the overall hydraulic system.Vibration signal can reflect the cavitation conditions in axial piston pumps and it has been combined with machine learning to detect the pump cavitation.However,the vibration signal usually contains noise in real working conditions,which raises concerns about accurate recognition of cavitation in noisy environment.This paper presents an intelligent method to recognise the cavitation in axial piston pumps in noisy environment.First,we train a convolutional neural network(CNN)using the spectrogram images transformed from raw vibration data under different cavitation conditions.Second,we employ the technique of gradient-weighted class activation mapping(Grad-CAM)to visualise class-discriminative regions in the spectrogram image.Finally,we propose a novel image processing method based on Grad-CAM heatmap to automatically remove entrained noise and enhance class features in the spectrogram image.The experimental results show that the proposed method greatly improves the diagnostic performance of the CNN model in noisy environments.The classification accuracy of cavitation conditions increases from 0.50 to 0.89 and from 0.80 to 0.92 at signal-to-noise ratios of 4 and 6 dB,respectively.展开更多
Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the...Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.展开更多
Sodium-ion batteries(SIBs)have been considered as an ideal choice for the next generation large-scale energy storage applications owing to the rich sodium resources and the analogous working principle to that of lithi...Sodium-ion batteries(SIBs)have been considered as an ideal choice for the next generation large-scale energy storage applications owing to the rich sodium resources and the analogous working principle to that of lithium-ion batteries(LIBs).Nevertheless,the larger size and heavier mass of Na^(+)ion than those of Li^(+)ion often lead to sluggish reaction kinetics and inferior cycling life in SIBs compared to the LIB counterparts.The pursuit of promising electrode materials that can accommodate the rapid and stable Na-ion insertion/extraction is the key to promoting the development of SIBs toward a commercial prosperity.One-dimensional(1 D)nanomaterials demonstrate great prospects in boosting the rate and cycling performances because of their large active surface areas,high endurance for deformation stress,short ions diffusion channels,and oriented electrons transfer paths.Electrospinning,as a versatile synthetic technology,features the advantages of controllable preparation,easy operation,and mass production,has been widely applied to fabricate the 1 D nanostructured electrode materials for SIBs.In this review,we comprehensively summarize the recent advances in the sodium-storage cathode and anode materials prepared by electrospinning,discuss the effects of modulating the spinning parameters on the materials’micro/nano-structures,and elucidate the structure-performance correlations of the tailored electrodes.Finally,the future directions to harvest more breakthroughs in electrospun Na-storage materials are pointed out.展开更多
AlGaN/GaN high electron mobility transistors （HEMTs） were irradiated by 256 MeV 127I ions with a fluence up to 1 × 10^10 ions/cm2 at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Bot...AlGaN/GaN high electron mobility transistors （HEMTs） were irradiated by 256 MeV 127I ions with a fluence up to 1 × 10^10 ions/cm2 at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Both the drain current ld and the gate current Ig increased in off-state during irradiation. Post-irradiation measurement results show that the device output, transfer, and gate characteristics changed significantly. The saturation drain current, reverse gate leakage current, and the gate-lag all increased dramatically. By photo emission microscopy, electroluminescence hot spots were found in the gate area. All of the parameters were retested after one day and after one week, and no obvious annealing effect was observed under a temperature of 300 K. Further analysis demonstrates that swift heavy ions produced latent tracks along the ion trajectories through the hetero-junction. Radiation-induced defects in the latent tracks decreased the charges in the two-dimensional electron gas and reduced the carrier mobility, degrading device performance.展开更多
Experimental evidence is presented showing obvious azimuthal dependence of single event upsets(SEU) and multiple-bit upset(MBU) patterns in radiation hardened by design(RHBD) and MBU-sensitive static random access mem...Experimental evidence is presented showing obvious azimuthal dependence of single event upsets(SEU) and multiple-bit upset(MBU) patterns in radiation hardened by design(RHBD) and MBU-sensitive static random access memories(SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell(DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal incidence.Predominant triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths(Lshaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain designs.During earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate.展开更多
Constant stress accelerated life tests(ALTs) can be applied to obtain a high estimation accuracy of reliability measure?ments, but these are time?consuming tests. Progressive stress ALTs can yield failures more quickl...Constant stress accelerated life tests(ALTs) can be applied to obtain a high estimation accuracy of reliability measure?ments, but these are time?consuming tests. Progressive stress ALTs can yield failures more quickly but cannot guaran tee the estimation accuracy of reliability measurements. In this paper, a progressive?constant combination stress ALT is proposed to combine the merits of both tests. The optimal plan, in which the design variables are the initial pro?gressive stress level, the progressive stress ramp rate, the sample allocation proportion of the progressive stress and the constant stress level, is determined using the principle of minimizing the asymptotic variance of the maximum likelihood estimator of the natural log reliable life for the connectors. A comparison between the optimal PCCSALT plan and the CSALT plan with the same sample size and estimation accuracy shows that the test time is reduced by 13.59% by applying the PCCSALT.展开更多
An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam an...An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.展开更多
In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor(DH HEMT) with a gate-drain spacing L_(GD)= 18.8 μm. Compared with the regular DH HEMT, our circular...In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor(DH HEMT) with a gate-drain spacing L_(GD)= 18.8 μm. Compared with the regular DH HEMT, our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm. The power figure of meritV_(BR)~2/RON for the circular HEMT is as high as 1.03 ×10~9 V^2·Ω^(-1)·cm^(-2). The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure. Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field.展开更多
The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. T...The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad（SiO2）. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.展开更多
The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channe...The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier heightΦ_(1,p),polarization charge density σ_(b),and equivalent unite capacitance C_(oc).It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V_(th),and threshold voltage|V_(th)|increases with the reduction in p-GaN doping concentration and the work-function of gate metal.Meanwhile,the increase in gate dielectric relative permittivity may cause the increase in threshold voltage|V_(th)|.Additionally,the parameter influencing output current most is the p-GaN doping concentration,and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×10^(16) cm^(-3) at VGS=-12 V and VDS=-10 V.展开更多
Residual useful life(RUL)prediction is a key issue for improving efficiency of aircraft engines and reducing their maintenance cost.Owing to various failure mechanism and operating environment,the application of class...Residual useful life(RUL)prediction is a key issue for improving efficiency of aircraft engines and reducing their maintenance cost.Owing to various failure mechanism and operating environment,the application of classical models in RUL prediction of aircraft engines is fairly difficult.In this study,a novel RUL prognostics method based on using ensemble recurrent neural network to process massive sensor data is proposed.First of all,sensor data obtained from the aircraft engines are preprocessed to eliminate singular values,reduce random fluctuation and preserve degradation trend of the raw sensor data.Secondly,three kinds of recurrent neural networks(RNN),including ordinary RNN,long shortterm memory(LSTM),and gated recurrent unit(GRU),are individually constructed.Thirdly,ensemble learning mechanism is designed to merge the above RNNs for producing a more accurate RUL prediction.The effectiveness of the proposed method is validated using two characteristically different turbofan engine datasets.Experimental results show a competitive performance of the proposed method in comparison with typical methods reported in literatures.展开更多
Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures. A relatively low sheet carrier density of 1.8×10^(12)cm^(-2), together with a high ele...Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures. A relatively low sheet carrier density of 1.8×10^(12)cm^(-2), together with a high electron mobility of1229.5 cm^2/V·s, was obtained for the prepared heterostructures. The surface morphology of the heterostructures was also significantly improved, i.e., with a root mean square roughness of 0.29 nm in a 2 μm×2 μm scan area. In addition to the improved properties, the enhancement-mode metal–oxide–semiconductor high electron mobility transistors(MOSHEMTs) processed on the heterostructures not only exhibited a high threshold voltage(VTH) of 3.1 V, but also demonstrated a significantly enhanced drain output current density of 669 m A/mm. These values probably represent the largest values obtained from the InAlGaN based enhancement-mode devices to the best of our knowledge. This study strongly indicates that the InAlGaN/GaN heterostructures grown by pulsed metal organic chemical vapor deposition could be promising for the applications of novel nitride-based electronic devices.展开更多
When a moderately stable phase is precipitated out during an intemal reaction, the behaviour of the penetrating atoms within the diffusion zone can be interpreted based on thermodynamic considerations. Evidence for “...When a moderately stable phase is precipitated out during an intemal reaction, the behaviour of the penetrating atoms within the diffusion zone can be interpreted based on thermodynamic considerations. Evidence for “up-hill” diffusion of the penetrating species through the matrix towards the precipitation front during the intemal nitridation of Ni-Cr alloys at 1125℃ and 6000 bar of N2-pressure was predicted. Such behaviour of nitrogen is opposite to the boundary conditions in Wagner＇s description of internal reactions. A volume change associated with the precipitation reaction resulted in a stress gradient between the alloys surface and the intemal nitridation front. Stress relief occurred mainly by transport of nickel to the gas/metal interface. Pipe diffusion-controlled creep is the dominant stress accommodation mechanism during nitriding of dilute Ni-Cr alloys at 700℃ under a flowing NH3 ＋ H2 gas mixture.展开更多
The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ...The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ · cm^(2) and the breakdown voltage(V_(BR)) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10^(15) cm^(-3) to 3×10^(16) cm^(-3). The VBRincreases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ · cm^(2) by increasing DLT from 4-μm to 11-μm. The VBRenhancement results from the increase of depletion region extension. The Baliga's figure of merit(BFOM) of3.8 GW/cm^(2) was obtained in the structure of 11-μm DLT and 10^(16) cm^(-3) DLC without FP. When DLT or DLC is variable,the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate(FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.展开更多
In this paper, a simulation tool named the neutron-induced single event effect predictive platform（NSEEP^2） is proposed to reveal the mechanism of atmospheric neutron-induced single event effect（SEE） in an electro...In this paper, a simulation tool named the neutron-induced single event effect predictive platform（NSEEP^2） is proposed to reveal the mechanism of atmospheric neutron-induced single event effect（SEE） in an electronic device, based on heavy-ion data and Monte-Carlo neutron transport simulation. The detailed metallization architecture and sensitive volume topology of a nanometric static random access memory（SRAM） device can be considered to calculate the real-time soft error rate（RTSER） in the applied environment accurately. The validity of this tool is verified by real-time experimental results. In addition, based on the NSEEP^2, RTSERs of 90 nm–32 nm silicon on insulator（SOI） and bulk SRAM device under various ambient conditions are predicted and analyzed to evaluate the neutron SEE sensitivity and reveal the underlying mechanism. It is found that as the feature size shrinks, the change trends of neutron SEE sensitivity of bulk and SOI technologies are opposite, which can be attributed to the different MBU performances. The RTSER of bulk technology is always 2.8–64 times higher than that of SOI technology, depending on the technology node, solar activity, and flight height.展开更多
Vibration isolation system(VIS)is usually applied to improve the pointing capability and resolution of a space optical payload.A novel vibration isolator is introduced.The equivalent stiffness model of the isolator is...Vibration isolation system(VIS)is usually applied to improve the pointing capability and resolution of a space optical payload.A novel vibration isolator is introduced.The equivalent stiffness model of the isolator is derived by analyzing its static characteristics.A VIS based on the bipod configuration is developed.Its dynamic model is derived and verified using the finite element method and experiments.Because this isolator contains viscoelastic material’which makes the frequency responsive analysis more difficult’an efficiency analysis approach based on the complex stiffness of viscoelastic material is proposed to calculate the transmissibility of the isolator.Finally’a prototype of the vibration isolator is manufactured and experimental studies are carried out.The experimental results show that the analytical results are in good correspondence with the experimental data and the isolator can effectively attenuate the vibrations for the optical payloads.Keywords：isolator;viscoelastic material；space optical展开更多
Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flick...Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect （LKE） at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body. It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10^18 eV^-1 cm^-3 to 3.59×10^18？eV^-1 cm^-3 after irradiation.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.U20A20186 and 62372063).
文摘Fault diagnosis of traction systems is important for the safety operation of high-speed trains.Long-term operation of the trains will degrade the performance of systems,which decreases the fault detection accuracy.To solve this problem,this paper proposes a fault detection method developed by a Generalized Autoencoder(GAE)for systems with performance degradation.The advantage of this method is that it can accurately detect faults when the traction system of high-speed trains is affected by performance degradation.Regardless of the probability distribution,it can handle any data,and the GAE has extremely high sensitivity in anomaly detection.Finally,the effectiveness of this method is verified through the Traction Drive Control System(TDCS)platform.At different performance degradation levels,our method’s experimental results are superior to traditional methods.
基金supported by the National Natural Science Foundation of China (Grant No. 12075065)。
文摘Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.
基金Project supported by the National Natural Science Foundation of China(Grant No.12075065)。
文摘Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are investigated.The drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton irradiation.When the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most serious.In the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase most.By comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation damage.The results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.
基金National Key R&D Program of China,Grant/Award Number:2018YFB1702503Open Foundation of the State Key Laboratory of Fluid Power and Mechatronic Systems,Grant/Award Number:GZKF-202108+2 种基金Open Foundation of the Guangdong Provincial Key Laboratory of Electronic Information Products Reliability TechnologyChina National Postdoctoral Program for Innovative Talents,Grant/Award Number:BX20200210China Postdoctoral Science Foundation,Grant/Award Number:2019M660086。
文摘The cavitation in axial piston pumps threatens the reliability and safety of the overall hydraulic system.Vibration signal can reflect the cavitation conditions in axial piston pumps and it has been combined with machine learning to detect the pump cavitation.However,the vibration signal usually contains noise in real working conditions,which raises concerns about accurate recognition of cavitation in noisy environment.This paper presents an intelligent method to recognise the cavitation in axial piston pumps in noisy environment.First,we train a convolutional neural network(CNN)using the spectrogram images transformed from raw vibration data under different cavitation conditions.Second,we employ the technique of gradient-weighted class activation mapping(Grad-CAM)to visualise class-discriminative regions in the spectrogram image.Finally,we propose a novel image processing method based on Grad-CAM heatmap to automatically remove entrained noise and enhance class features in the spectrogram image.The experimental results show that the proposed method greatly improves the diagnostic performance of the CNN model in noisy environments.The classification accuracy of cavitation conditions increases from 0.50 to 0.89 and from 0.80 to 0.92 at signal-to-noise ratios of 4 and 6 dB,respectively.
基金supported by the National Natural Science Foundation of China(No.11505033)the Science and Technology Research Project of Guangdong,China(Nos.2015B090901048 and 2017B090901068)the Science and Technology Plan Project of Guangzhou,China(No.201707010186)
文摘Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.
基金Financial support from the National Natural Science Foundation of China(21805007)Young Elite Scientists Sponsorship Program by CAST(2018QNRC001)+3 种基金Beijing Natural Science Foundation(L182019)National Key Research and Development Program of China(2018YFB0104300)Fundamental Research Funds for the Central Universities(FRF-TP-19-029A2)111 Project(B12015)。
文摘Sodium-ion batteries(SIBs)have been considered as an ideal choice for the next generation large-scale energy storage applications owing to the rich sodium resources and the analogous working principle to that of lithium-ion batteries(LIBs).Nevertheless,the larger size and heavier mass of Na^(+)ion than those of Li^(+)ion often lead to sluggish reaction kinetics and inferior cycling life in SIBs compared to the LIB counterparts.The pursuit of promising electrode materials that can accommodate the rapid and stable Na-ion insertion/extraction is the key to promoting the development of SIBs toward a commercial prosperity.One-dimensional(1 D)nanomaterials demonstrate great prospects in boosting the rate and cycling performances because of their large active surface areas,high endurance for deformation stress,short ions diffusion channels,and oriented electrons transfer paths.Electrospinning,as a versatile synthetic technology,features the advantages of controllable preparation,easy operation,and mass production,has been widely applied to fabricate the 1 D nanostructured electrode materials for SIBs.In this review,we comprehensively summarize the recent advances in the sodium-storage cathode and anode materials prepared by electrospinning,discuss the effects of modulating the spinning parameters on the materials’micro/nano-structures,and elucidate the structure-performance correlations of the tailored electrodes.Finally,the future directions to harvest more breakthroughs in electrospun Na-storage materials are pointed out.
基金supported by the National Natural Science Foundation of China(Grant No.61204112)
文摘AlGaN/GaN high electron mobility transistors （HEMTs） were irradiated by 256 MeV 127I ions with a fluence up to 1 × 10^10 ions/cm2 at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Both the drain current ld and the gate current Ig increased in off-state during irradiation. Post-irradiation measurement results show that the device output, transfer, and gate characteristics changed significantly. The saturation drain current, reverse gate leakage current, and the gate-lag all increased dramatically. By photo emission microscopy, electroluminescence hot spots were found in the gate area. All of the parameters were retested after one day and after one week, and no obvious annealing effect was observed under a temperature of 300 K. Further analysis demonstrates that swift heavy ions produced latent tracks along the ion trajectories through the hetero-junction. Radiation-induced defects in the latent tracks decreased the charges in the two-dimensional electron gas and reduced the carrier mobility, degrading device performance.
基金Supported by National Natural Science Foundation of China(Nos.11179003,10975164,61204112 and 61204116)China Postdoctoral Science Foundation(No.2014M552170)
文摘Experimental evidence is presented showing obvious azimuthal dependence of single event upsets(SEU) and multiple-bit upset(MBU) patterns in radiation hardened by design(RHBD) and MBU-sensitive static random access memories(SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell(DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal incidence.Predominant triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths(Lshaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain designs.During earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate.
基金Supported by National Natural Science Foundation of China(Grant No.51405447)International Science&Technology Cooperation Program of China(Grant No.2015DFA71400)
文摘Constant stress accelerated life tests(ALTs) can be applied to obtain a high estimation accuracy of reliability measure?ments, but these are time?consuming tests. Progressive stress ALTs can yield failures more quickly but cannot guaran tee the estimation accuracy of reliability measurements. In this paper, a progressive?constant combination stress ALT is proposed to combine the merits of both tests. The optimal plan, in which the design variables are the initial pro?gressive stress level, the progressive stress ramp rate, the sample allocation proportion of the progressive stress and the constant stress level, is determined using the principle of minimizing the asymptotic variance of the maximum likelihood estimator of the natural log reliable life for the connectors. A comparison between the optimal PCCSALT plan and the CSALT plan with the same sample size and estimation accuracy shows that the test time is reduced by 13.59% by applying the PCCSALT.
基金supported by the National Natural Science Foundation of China(Nos.51505089 and61204116)the Opening Project of the Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(Nos.ZHD201207 and 9140C030605140C03015)the Pearl River S&T Nova Program of Guangzhou(No.2014J2200086)
文摘An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400100)the National Natural Science Foundation of China(Grant Nos.11435010,61474086,and 61804125)the Natural Science Basic Research Program of Shaanxi Province,China(Grant No.2016ZDJC-02)
文摘In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor(DH HEMT) with a gate-drain spacing L_(GD)= 18.8 μm. Compared with the regular DH HEMT, our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm. The power figure of meritV_(BR)~2/RON for the circular HEMT is as high as 1.03 ×10~9 V^2·Ω^(-1)·cm^(-2). The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure. Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field.
基金Project supported by the National Fund for Distinguished Young Scholars （Grant No 59925205）, the Basic Research Program of Shanghai （Grant No 02DJ14069）, and the National Natural Science Foundation of China （Grant No 10305018）.
文摘The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad（SiO2）. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.
基金Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2020B010174001 and 2020B010171002)the Ningbo Science and Technology Innovation Program 2025(Grant No.2019B10123)the National Natural Science Foundation of China(Grant No.62074122).
文摘The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier heightΦ_(1,p),polarization charge density σ_(b),and equivalent unite capacitance C_(oc).It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V_(th),and threshold voltage|V_(th)|increases with the reduction in p-GaN doping concentration and the work-function of gate metal.Meanwhile,the increase in gate dielectric relative permittivity may cause the increase in threshold voltage|V_(th)|.Additionally,the parameter influencing output current most is the p-GaN doping concentration,and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×10^(16) cm^(-3) at VGS=-12 V and VDS=-10 V.
基金the National Natural Science Foundationof China(Nos.11672098,11502063)the Natural Science Foundation of Anhui Province(No.1608085QA07).
文摘Residual useful life(RUL)prediction is a key issue for improving efficiency of aircraft engines and reducing their maintenance cost.Owing to various failure mechanism and operating environment,the application of classical models in RUL prediction of aircraft engines is fairly difficult.In this study,a novel RUL prognostics method based on using ensemble recurrent neural network to process massive sensor data is proposed.First of all,sensor data obtained from the aircraft engines are preprocessed to eliminate singular values,reduce random fluctuation and preserve degradation trend of the raw sensor data.Secondly,three kinds of recurrent neural networks(RNN),including ordinary RNN,long shortterm memory(LSTM),and gated recurrent unit(GRU),are individually constructed.Thirdly,ensemble learning mechanism is designed to merge the above RNNs for producing a more accurate RUL prediction.The effectiveness of the proposed method is validated using two characteristically different turbofan engine datasets.Experimental results show a competitive performance of the proposed method in comparison with typical methods reported in literatures.
基金Project supported by the National Postdoctoral Program for Innovative Talents,China(Grant No.BX201700184)the National Key Research and Development Program of China(Grant Nos.2016YFB0400105 and 2017YFB0403102)
文摘Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures. A relatively low sheet carrier density of 1.8×10^(12)cm^(-2), together with a high electron mobility of1229.5 cm^2/V·s, was obtained for the prepared heterostructures. The surface morphology of the heterostructures was also significantly improved, i.e., with a root mean square roughness of 0.29 nm in a 2 μm×2 μm scan area. In addition to the improved properties, the enhancement-mode metal–oxide–semiconductor high electron mobility transistors(MOSHEMTs) processed on the heterostructures not only exhibited a high threshold voltage(VTH) of 3.1 V, but also demonstrated a significantly enhanced drain output current density of 669 m A/mm. These values probably represent the largest values obtained from the InAlGaN based enhancement-mode devices to the best of our knowledge. This study strongly indicates that the InAlGaN/GaN heterostructures grown by pulsed metal organic chemical vapor deposition could be promising for the applications of novel nitride-based electronic devices.
文摘When a moderately stable phase is precipitated out during an intemal reaction, the behaviour of the penetrating atoms within the diffusion zone can be interpreted based on thermodynamic considerations. Evidence for “up-hill” diffusion of the penetrating species through the matrix towards the precipitation front during the intemal nitridation of Ni-Cr alloys at 1125℃ and 6000 bar of N2-pressure was predicted. Such behaviour of nitrogen is opposite to the boundary conditions in Wagner＇s description of internal reactions. A volume change associated with the precipitation reaction resulted in a stress gradient between the alloys surface and the intemal nitridation front. Stress relief occurred mainly by transport of nickel to the gas/metal interface. Pipe diffusion-controlled creep is the dominant stress accommodation mechanism during nitriding of dilute Ni-Cr alloys at 700℃ under a flowing NH3 ＋ H2 gas mixture.
基金supported by Key-Area Research and Development Program of Guangdong Province,China (Grant Nos. 2020B010174001 and 2020B010171002)Ningbo Science and Technology Innovation 2025 (Grant No. 2019B10123)。
文摘The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ · cm^(2) and the breakdown voltage(V_(BR)) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10^(15) cm^(-3) to 3×10^(16) cm^(-3). The VBRincreases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ · cm^(2) by increasing DLT from 4-μm to 11-μm. The VBRenhancement results from the increase of depletion region extension. The Baliga's figure of merit(BFOM) of3.8 GW/cm^(2) was obtained in the structure of 11-μm DLT and 10^(16) cm^(-3) DLC without FP. When DLT or DLC is variable,the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate(FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.
基金supported by the National Natural Science Foundation of China(Grant No.11505033)the Science and Technology Research Project of Guangdong Province,China(Grant Nos.2015B090901048 and 2017B090901068)the Science and Technology Plan Project of Guangzhou,China(Grant No.201707010186)
文摘In this paper, a simulation tool named the neutron-induced single event effect predictive platform（NSEEP^2） is proposed to reveal the mechanism of atmospheric neutron-induced single event effect（SEE） in an electronic device, based on heavy-ion data and Monte-Carlo neutron transport simulation. The detailed metallization architecture and sensitive volume topology of a nanometric static random access memory（SRAM） device can be considered to calculate the real-time soft error rate（RTSER） in the applied environment accurately. The validity of this tool is verified by real-time experimental results. In addition, based on the NSEEP^2, RTSERs of 90 nm–32 nm silicon on insulator（SOI） and bulk SRAM device under various ambient conditions are predicted and analyzed to evaluate the neutron SEE sensitivity and reveal the underlying mechanism. It is found that as the feature size shrinks, the change trends of neutron SEE sensitivity of bulk and SOI technologies are opposite, which can be attributed to the different MBU performances. The RTSER of bulk technology is always 2.8–64 times higher than that of SOI technology, depending on the technology node, solar activity, and flight height.
文摘Vibration isolation system(VIS)is usually applied to improve the pointing capability and resolution of a space optical payload.A novel vibration isolator is introduced.The equivalent stiffness model of the isolator is derived by analyzing its static characteristics.A VIS based on the bipod configuration is developed.Its dynamic model is derived and verified using the finite element method and experiments.Because this isolator contains viscoelastic material’which makes the frequency responsive analysis more difficult’an efficiency analysis approach based on the complex stiffness of viscoelastic material is proposed to calculate the transmissibility of the isolator.Finally’a prototype of the vibration isolator is manufactured and experimental studies are carried out.The experimental results show that the analytical results are in good correspondence with the experimental data and the isolator can effectively attenuate the vibrations for the optical payloads.Keywords：isolator;viscoelastic material；space optical
基金Supported by the National Postdoctoral Program for Innovative Talents under Grant No BX201600037the Science and Technology Research Project of Guangdong Province under Grant Nos 20158090901048 and 2015B090912002the Distinguished Young Scientist Program of Guangdong Province under Grant No 2015A030306002
文摘Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect （LKE） at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body. It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10^18 eV^-1 cm^-3 to 3.59×10^18？eV^-1 cm^-3 after irradiation.
