Raman lasers are essential in atomic physics,and the development of portable devices has posed requirements for time-division multiplexing of Raman lasers.We demonstrate an innovative gigahertz frequency hopping appro...Raman lasers are essential in atomic physics,and the development of portable devices has posed requirements for time-division multiplexing of Raman lasers.We demonstrate an innovative gigahertz frequency hopping approach of a slave Raman laser within an optical phase-locked loop(OPLL),which finds practical application in an atomic gravimeter,where the OPLL frequently switches between near-resonance lasers and significantly detuned Raman lasers.The method merges the advantages of rapid and extensive frequency hopping with the OPLL’s inherent low phase noise,and exhibits a versatile range of applications in compact laser systems,promising advancements in portable instruments.展开更多
The selective growth of semiconducting single-walled carbon nanotubes(s-SWCNTs)is of great importance in many high-end applications represented by nanoelectronics.Here,we developed a general approach to grow horizonta...The selective growth of semiconducting single-walled carbon nanotubes(s-SWCNTs)is of great importance in many high-end applications represented by nanoelectronics.Here,we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature(ST)-cut quartz with bimetallic catalysts using carbon monoxide(CO)as both catalyst reductant and single component carbon feedstock under atmospheric pressure.The disproportionation of CO produces not only carbon species for SWCNT growth but also CO_(2),which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes.The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays.At the optimized conditions,we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97%using CoCu catalysts,confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices.This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts,such as FeCu and CoMn.It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2021YFA0718300 and 2021YFA1400900)the National Natural Science Foundation of China(Grant Nos.11920101004,11934002,and 92365208)+1 种基金Science and Technology Major Project of Shanxi(Grant No.202101030201022)Space Application System of China Manned Space Program.
文摘Raman lasers are essential in atomic physics,and the development of portable devices has posed requirements for time-division multiplexing of Raman lasers.We demonstrate an innovative gigahertz frequency hopping approach of a slave Raman laser within an optical phase-locked loop(OPLL),which finds practical application in an atomic gravimeter,where the OPLL frequently switches between near-resonance lasers and significantly detuned Raman lasers.The method merges the advantages of rapid and extensive frequency hopping with the OPLL’s inherent low phase noise,and exhibits a versatile range of applications in compact laser systems,promising advancements in portable instruments.
基金supported by National Natural Science Foundation of China(Nos.22120102004 and U21A6004)the National R&D Program of China(No.2022YFA1203300)+2 种基金Shenzhen KQTD Project(No.KQTD20180411143400981)Science and Technology Major Project of Shanxi(No.202101030201022)Beijing National Laboratory for Molecular Sciences(No.BNLMS-CXTD-202001).
文摘The selective growth of semiconducting single-walled carbon nanotubes(s-SWCNTs)is of great importance in many high-end applications represented by nanoelectronics.Here,we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature(ST)-cut quartz with bimetallic catalysts using carbon monoxide(CO)as both catalyst reductant and single component carbon feedstock under atmospheric pressure.The disproportionation of CO produces not only carbon species for SWCNT growth but also CO_(2),which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes.The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays.At the optimized conditions,we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97%using CoCu catalysts,confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices.This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts,such as FeCu and CoMn.It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.
基金supported by the National Program on Key Basic Research Project of China (2018YFA0305601, 2021YFA07183012021YFA1400900)+4 种基金the National Natural Science Foundation of China (61727819, 11934002, and 11874073)Shanghai Municipal Science and Technology Major Project (2019SHZDZCX01)the Chinese Academy of Sciences Priority Research Program(XDB35020100)the Science and Technology Major Project of Shanxi (202101030201022)the Space Application System of China Manned Space Program
