Two-dimensional(2D)oxides have been the focus of substantial research interest recently,owing to their fascinating physico-chemical properties.However,fabrication of large-area 2D oxide materials in a controlled manne...Two-dimensional(2D)oxides have been the focus of substantial research interest recently,owing to their fascinating physico-chemical properties.However,fabrication of large-area 2D oxide materials in a controlled manner under mild conditions still remains a formidable challenge.Herein,we develop a facile and universal strategy based on the sonochemistry approach for controllable and large-area growth of quasi-aligned single-crystalline ZnO nanosheets on a Zn substrate(Zn@SC-ZnO)under ambient conditions.The obtained ZnO nanosheets possess the desired exclusively exposed(001)facets,which have been confirmed to play a critical role in significantly reducing the activation energy and facilitating the stripping/plating processes of Zn.Accordingly,the constructed Zn@SC-ZnO||Zn@SC-ZnO symmetric cell has very low polarization overpotential down to~20 mV,with limited dendrite growth and side reactions for Zn anodes.The developed Zn@SC-ZnO//MnO_(2)aqueous Zn-ion batteries(ZIBs)show a voltage efficiency of 88.2%under 500 mA g^(-1)at the stage of 50%depth of discharge,which is state of the art for ZIBs reported to date.Furthermore,the as-assembled large-size cell(5 cm×5 cm)delivers an open circuit potential of 1.648 V,and can be robustly operated under a high current of 20 mA,showing excellent potential for future scalable applications.展开更多
Currently,the synthesis of nanostructures still encounters two grand challenges:one is the often-required high temperatures and/or high pressures,and the other is the scalable fabrication.Here,to break through such bo...Currently,the synthesis of nanostructures still encounters two grand challenges:one is the often-required high temperatures and/or high pressures,and the other is the scalable fabrication.Here,to break through such bottlenecks,we demonstrate an ambient-condition strategy for rapid mass production of fourthgeneration semiconductor Ga_(2)O_(3)nanoarchitectures assembled by single-crystalline nanosheets in a controlled manner based on sonochemistry.Their growth is fundamentally determined by the introduced ethanediamine in rationally designed source materials,which could not only protect the metal Ga against reacting with H_(2)O into GaOOH,but facilitate the reaction of Ga with OH·radicals for target crystalline Ga_(2)O_(3)nanostructures.As a proof of concept for applications,the as-fabricated Ga_(2)O_(3)nanoarchitectures exhibit superb performances for electromagnetic wave absorption with a reflection loss value of 52.2 dB at 8.1 GHz,and ammonia sensing with high sensitivity and selectivity at room temperature,representing their bright future to be commercially applied in modern devices.展开更多
We report the scalable fabrication of CdS/ZnS 1D/2D heterojunctions under ambient air conditions(i.e.,room temperature and atmospheric pressure)in which ZnS nanoparticles are anchored on the surface of CdS nanosheets....We report the scalable fabrication of CdS/ZnS 1D/2D heterojunctions under ambient air conditions(i.e.,room temperature and atmospheric pressure)in which ZnS nanoparticles are anchored on the surface of CdS nanosheets.The as-formed heterojunctions exhibit a significantly enhanced photocatalytic H_(2) evolution rate of 14.02 mmol h^(-1) g^(-1) when irradiated with visible light,which is~10 and 85 times higher than those of pristine CdS nanosheets and CdS nanoparticles,respectively,and superior to most of the CdS-based photocatalysts reported to date.Furthermore,they provide robust photocatalytic performance with demonstratable stability over 58 h,indicating their potential for practical applications.The formation of 1D/2D heterojunctions not only provides improved exposed active sites that respond to illumination but also provides a rapid pathway to generate photogenerated carriers for efficient separation and transfer through the matrix of single-crystalline CdS nanosheets.In addition,first-principles simulations demonstrate that the existence of rich Zn vacancies increases the energy level of the ZnS valence band maximum to construct type-II and Z-scheme mixed heterojunctions,which plays a critical role in suppressing the recombination of carriers with limited photocorrosion of CdS to enhance photocatalytic behavior.展开更多
The sluggish kinetics for water oxidation is recognized as one of the major problems for the unsatisfied photoelectrochemical(PEC) performance. Herein, we developed a feasible strategy based on in-situ selective surfa...The sluggish kinetics for water oxidation is recognized as one of the major problems for the unsatisfied photoelectrochemical(PEC) performance. Herein, we developed a feasible strategy based on in-situ selective surface cation exchange, for activating surface water oxidation reactivity toward boosted PEC water oxidation of BiVO_(4) photoanodes with fundamentally improved surface charge transfer. The asconstructed Co/BiVO_(4) photoanodes exhibit 2.6 times increase in photocurrent density with superior stability, in comparison to those of pristine counterpart. Moreover, the faradaic efficiency of as-fabricated photoanode can be up to ~ 95% at 1.23 V(vs. RHE). The unique selective replacement of Bi by Co on the surface could modify the electronic structure of BiVO_(4) with reduced energy barrier of the deprotonation of OH^(+) to O, thus favoring the overall excellent PEC performance of Co/BiVO_(4) photoanode.展开更多
To date,the synthesis of crystalline ZnO nanostructures was often performed under high temperatures and/or high pressures with tiny output,which limits their commercial applications.Herein,we report the progress on sy...To date,the synthesis of crystalline ZnO nanostructures was often performed under high temperatures and/or high pressures with tiny output,which limits their commercial applications.Herein,we report the progress on synthesizing single-crystalline ZnO nanosheets under ambient conditions(i.e.,room temperature(RT)and atmospheric pressure)based on a sonochemistry strategy.Furthermore,their controllable growth is accomplished by adjusting the pH values of solutions,enabling the tailored crystal growth habits on the polar-charged faces of ZnO along c-axis.As a proof of concept for their potential applications,the ZnO nanosheets exhibit highly efficient performance for sensing ammonia at RT,with ultrahigh sensitivity(S=610 at 100 ppm),excellent selectivity,rapid detection(response time/recover time=70 s/4 s),and outstanding detection limit down to 0.5 ppm,superior to those of all pure ZnO nanostructures and most ZnO-based composite counterparts ever reported.The present work might open a door for controllable production of ZnO nanostructures under mild conditions,and facilitate the exploration of modern gas sensors for detecting gaseous molecules at RT,which underscores their potential toward practical applications in opto-electronic nanodevices.展开更多
The controllable synthesis of complicated nanostructures in advanced two-dimensional(2D)semiconductors,such as periodic regular hole arrays,is essential and remains immature.Here,we report a green,facile,highly contro...The controllable synthesis of complicated nanostructures in advanced two-dimensional(2D)semiconductors,such as periodic regular hole arrays,is essential and remains immature.Here,we report a green,facile,highly controlled synthetic method to efficiently pattern 2D semiconductors,such as periodic regular hexagonal-shaped hole arrays(HHA),in 2D-TMDs.Combining the production of artificial defect arrays through laser irradiation with anisotropic annealing etching,we created HHA with different arrangements,controlled hole sizes,and densities in bilayer WS_(2).Atomic force microscopy(AFM),Raman,photoluminescence(PL),and scanning transmission electron microscopy(STEM)characterization show that the 2D semiconductors have high quality with atomical clean and sharp edges as well as undamaged crystals in the unetched region.Furthermore,other nanostructures,such as nanoribbons and periodic regular triangular-shaped 2D-TMD arrays,can be fabricated.This kind of 2D semiconductors fabrication strategy is general and can be extended to a series of 2D materials.Density functional theory(DFT)calculations show that one WS_(2)molecule from the edges of the laser-irradiated holed region exhibits a robust etching activation,making selective etching at the artificial defects and the fabrication of regular 2D semiconductors possible.展开更多
Moore’s Law has been the driving force behind the semiconductor in-dustry for several decades,but as silicon-based transistors approach their physical limits,researchers are searching for new materials to sustain thi...Moore’s Law has been the driving force behind the semiconductor in-dustry for several decades,but as silicon-based transistors approach their physical limits,researchers are searching for new materials to sustain this exponential growth.Two-dimensional transition metal dichalcogenides(TMDs),with their atomically thin structure and en-ticing physical properties,have emerged as the most promising can-didates for downsizing and improving device integration.Embold-ened by the direction of achieving large-area and high-quality TMDs growth,wafer-scale TMDs growth strategies have been continuously developed,suggesting that TMDs are poised to become a new plat-form for next-generation electronic devices.In this review,advanced synthesis routes and inherent properties of wafer-scale TMDs were critically assessed.In addition,the performance in electronic devices was also discussed,providing an outlook on the opportunities and challenges that lie ahead in their development.展开更多
基金the National Natural Science Foundation of China(NSFC,Grant No.51972178)the Natural Science Foundation of Ningbo(2022J139)the Ningbo Yongjiang Talent Introduction Programme(2022A-227-G).
文摘Two-dimensional(2D)oxides have been the focus of substantial research interest recently,owing to their fascinating physico-chemical properties.However,fabrication of large-area 2D oxide materials in a controlled manner under mild conditions still remains a formidable challenge.Herein,we develop a facile and universal strategy based on the sonochemistry approach for controllable and large-area growth of quasi-aligned single-crystalline ZnO nanosheets on a Zn substrate(Zn@SC-ZnO)under ambient conditions.The obtained ZnO nanosheets possess the desired exclusively exposed(001)facets,which have been confirmed to play a critical role in significantly reducing the activation energy and facilitating the stripping/plating processes of Zn.Accordingly,the constructed Zn@SC-ZnO||Zn@SC-ZnO symmetric cell has very low polarization overpotential down to~20 mV,with limited dendrite growth and side reactions for Zn anodes.The developed Zn@SC-ZnO//MnO_(2)aqueous Zn-ion batteries(ZIBs)show a voltage efficiency of 88.2%under 500 mA g^(-1)at the stage of 50%depth of discharge,which is state of the art for ZIBs reported to date.Furthermore,the as-assembled large-size cell(5 cm×5 cm)delivers an open circuit potential of 1.648 V,and can be robustly operated under a high current of 20 mA,showing excellent potential for future scalable applications.
基金Top Talent Project of Ningbo Municipal Government,National Natural Science Foundation of China(No.51972178)。
文摘Currently,the synthesis of nanostructures still encounters two grand challenges:one is the often-required high temperatures and/or high pressures,and the other is the scalable fabrication.Here,to break through such bottlenecks,we demonstrate an ambient-condition strategy for rapid mass production of fourthgeneration semiconductor Ga_(2)O_(3)nanoarchitectures assembled by single-crystalline nanosheets in a controlled manner based on sonochemistry.Their growth is fundamentally determined by the introduced ethanediamine in rationally designed source materials,which could not only protect the metal Ga against reacting with H_(2)O into GaOOH,but facilitate the reaction of Ga with OH·radicals for target crystalline Ga_(2)O_(3)nanostructures.As a proof of concept for applications,the as-fabricated Ga_(2)O_(3)nanoarchitectures exhibit superb performances for electromagnetic wave absorption with a reflection loss value of 52.2 dB at 8.1 GHz,and ammonia sensing with high sensitivity and selectivity at room temperature,representing their bright future to be commercially applied in modern devices.
基金Hunan Provincial Innovation Foundation for Postgraduate,Grant/Award Number:CX20200454National Natural Science Foundation of China,Grant/Award Number:51972178。
文摘We report the scalable fabrication of CdS/ZnS 1D/2D heterojunctions under ambient air conditions(i.e.,room temperature and atmospheric pressure)in which ZnS nanoparticles are anchored on the surface of CdS nanosheets.The as-formed heterojunctions exhibit a significantly enhanced photocatalytic H_(2) evolution rate of 14.02 mmol h^(-1) g^(-1) when irradiated with visible light,which is~10 and 85 times higher than those of pristine CdS nanosheets and CdS nanoparticles,respectively,and superior to most of the CdS-based photocatalysts reported to date.Furthermore,they provide robust photocatalytic performance with demonstratable stability over 58 h,indicating their potential for practical applications.The formation of 1D/2D heterojunctions not only provides improved exposed active sites that respond to illumination but also provides a rapid pathway to generate photogenerated carriers for efficient separation and transfer through the matrix of single-crystalline CdS nanosheets.In addition,first-principles simulations demonstrate that the existence of rich Zn vacancies increases the energy level of the ZnS valence band maximum to construct type-II and Z-scheme mixed heterojunctions,which plays a critical role in suppressing the recombination of carriers with limited photocorrosion of CdS to enhance photocatalytic behavior.
基金supported by the project funded by the National Natural Science Foundation of China (52172222, 5197226 and 51972178)the China Postdoctoral Science Foundation(2020 M681966)+1 种基金the exchange project of the sixth ChinaNorthern Macedonia Science and Technology Meeting (6-11)the Natural Science Foundation of Ningbo Municipal Government(202003 N4164 and 2021J145)。
文摘The sluggish kinetics for water oxidation is recognized as one of the major problems for the unsatisfied photoelectrochemical(PEC) performance. Herein, we developed a feasible strategy based on in-situ selective surface cation exchange, for activating surface water oxidation reactivity toward boosted PEC water oxidation of BiVO_(4) photoanodes with fundamentally improved surface charge transfer. The asconstructed Co/BiVO_(4) photoanodes exhibit 2.6 times increase in photocurrent density with superior stability, in comparison to those of pristine counterpart. Moreover, the faradaic efficiency of as-fabricated photoanode can be up to ~ 95% at 1.23 V(vs. RHE). The unique selective replacement of Bi by Co on the surface could modify the electronic structure of BiVO_(4) with reduced energy barrier of the deprotonation of OH^(+) to O, thus favoring the overall excellent PEC performance of Co/BiVO_(4) photoanode.
基金This work was supported by the National Natural Science Foundation of China(Grant No.51972178)Hunan Provincial Innovation Foundation for Postgraduate(Grant No.CX20200454).
文摘To date,the synthesis of crystalline ZnO nanostructures was often performed under high temperatures and/or high pressures with tiny output,which limits their commercial applications.Herein,we report the progress on synthesizing single-crystalline ZnO nanosheets under ambient conditions(i.e.,room temperature(RT)and atmospheric pressure)based on a sonochemistry strategy.Furthermore,their controllable growth is accomplished by adjusting the pH values of solutions,enabling the tailored crystal growth habits on the polar-charged faces of ZnO along c-axis.As a proof of concept for their potential applications,the ZnO nanosheets exhibit highly efficient performance for sensing ammonia at RT,with ultrahigh sensitivity(S=610 at 100 ppm),excellent selectivity,rapid detection(response time/recover time=70 s/4 s),and outstanding detection limit down to 0.5 ppm,superior to those of all pure ZnO nanostructures and most ZnO-based composite counterparts ever reported.The present work might open a door for controllable production of ZnO nanostructures under mild conditions,and facilitate the exploration of modern gas sensors for detecting gaseous molecules at RT,which underscores their potential toward practical applications in opto-electronic nanodevices.
基金National Key R&D Program of the Ministry of Science and Technology of China,Grant/Award Number:2022YFA1203801The National Natural Science Foundation of China,Grant/Award Numbers:51991340,51991343,52221001,62174051+1 种基金The Hunan Key R&D Program Project,Grant/Award Number:2022GK2005Ningbo Natural Science Foundation,Grant/Award Number:2023J023。
文摘The controllable synthesis of complicated nanostructures in advanced two-dimensional(2D)semiconductors,such as periodic regular hole arrays,is essential and remains immature.Here,we report a green,facile,highly controlled synthetic method to efficiently pattern 2D semiconductors,such as periodic regular hexagonal-shaped hole arrays(HHA),in 2D-TMDs.Combining the production of artificial defect arrays through laser irradiation with anisotropic annealing etching,we created HHA with different arrangements,controlled hole sizes,and densities in bilayer WS_(2).Atomic force microscopy(AFM),Raman,photoluminescence(PL),and scanning transmission electron microscopy(STEM)characterization show that the 2D semiconductors have high quality with atomical clean and sharp edges as well as undamaged crystals in the unetched region.Furthermore,other nanostructures,such as nanoribbons and periodic regular triangular-shaped 2D-TMD arrays,can be fabricated.This kind of 2D semiconductors fabrication strategy is general and can be extended to a series of 2D materials.Density functional theory(DFT)calculations show that one WS_(2)molecule from the edges of the laser-irradiated holed region exhibits a robust etching activation,making selective etching at the artificial defects and the fabrication of regular 2D semiconductors possible.
基金supported by Hunan Provincial Natural Science Foundation of China (grant No.2022JJ20085)Changsha Natural Science Foundation (grant No.kq2202092).
文摘Moore’s Law has been the driving force behind the semiconductor in-dustry for several decades,but as silicon-based transistors approach their physical limits,researchers are searching for new materials to sustain this exponential growth.Two-dimensional transition metal dichalcogenides(TMDs),with their atomically thin structure and en-ticing physical properties,have emerged as the most promising can-didates for downsizing and improving device integration.Embold-ened by the direction of achieving large-area and high-quality TMDs growth,wafer-scale TMDs growth strategies have been continuously developed,suggesting that TMDs are poised to become a new plat-form for next-generation electronic devices.In this review,advanced synthesis routes and inherent properties of wafer-scale TMDs were critically assessed.In addition,the performance in electronic devices was also discussed,providing an outlook on the opportunities and challenges that lie ahead in their development.
