In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand tempera...In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand temperature characteristics of polysilicon resistors.The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor,and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.展开更多
文摘In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand temperature characteristics of polysilicon resistors.The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor,and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.
