The demand for adopting neural networks in resource-constrained embedded devices is continuously increasing.Quantization is one of the most promising solutions to reduce computational cost and memory storage on embedd...The demand for adopting neural networks in resource-constrained embedded devices is continuously increasing.Quantization is one of the most promising solutions to reduce computational cost and memory storage on embedded devices.In order to reduce the complexity and overhead of deploying neural networks on Integeronly hardware,most current quantization methods use a symmetric quantization mapping strategy to quantize a floating-point neural network into an integer network.However,although symmetric quantization has the advantage of easier implementation,it is sub-optimal for cases where the range could be skewed and not symmetric.This often comes at the cost of lower accuracy.This paper proposed an activation redistribution-based hybrid asymmetric quantizationmethod for neural networks.The proposedmethod takes data distribution into consideration and can resolve the contradiction between the quantization accuracy and the ease of implementation,balance the trade-off between clipping range and quantization resolution,and thus improve the accuracy of the quantized neural network.The experimental results indicate that the accuracy of the proposed method is 2.02%and 5.52%higher than the traditional symmetric quantization method for classification and detection tasks,respectively.The proposed method paves the way for computationally intensive neural network models to be deployed on devices with limited computing resources.Codes will be available on https://github.com/ycjcy/Hybrid-Asymmetric-Quantization.展开更多
Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the in...Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.展开更多
The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further...The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.展开更多
The data analysis of blasting sites has always been the research goal of relevant researchers.The rise of mobile blasting robots has aroused many researchers’interest in machine learning methods for target detection ...The data analysis of blasting sites has always been the research goal of relevant researchers.The rise of mobile blasting robots has aroused many researchers’interest in machine learning methods for target detection in the field of blasting.Serverless Computing can provide a variety of computing services for people without hardware foundations and rich software development experience,which has aroused people’s interest in how to use it in the field ofmachine learning.In this paper,we design a distributedmachine learning training application based on the AWS Lambda platform.Based on data parallelism,the data aggregation and training synchronization in Function as a Service(FaaS)are effectively realized.It also encrypts the data set,effectively reducing the risk of data leakage.We rent a cloud server and a Lambda,and then we conduct experiments to evaluate our applications.Our results indicate the effectiveness,rapidity,and economy of distributed training on FaaS.展开更多
Machine learning(ML)methods with good applicability to complex and highly nonlinear sequences have been attracting much attention in recent years for predictions of complicated mechanical properties of various materia...Machine learning(ML)methods with good applicability to complex and highly nonlinear sequences have been attracting much attention in recent years for predictions of complicated mechanical properties of various materials.As one of the widely known ML methods,back-propagation(BP)neural networks with and without optimization by genetic algorithm(GA)are also established for comparisons of time cost and prediction error.With the aim to further increase the prediction accuracy and efficiency,this paper proposes a long short-term memory(LSTM)networks model to predict the dynamic compressive performance of concrete-like materials at high strain rates.Dynamic explicit analysis is performed in the finite element(FE)software ABAQUS to simulate various waveforms in the split Hopkinson pressure bar(SHPB)experiments by applying different stress waves in the incident bar.The FE simulation accuracy is validated against SHPB experimental results from the viewpoint of dynamic increase factor.In order to cover more extensive loading scenarios,60 sets of FE simulations are conducted in this paper to generate three kinds of waveforms in the incident and transmission bars of SHPB experiments.By training the proposed three networks,the nonlinear mapping relations can be reasonably established between incident,reflect,and transmission waves.Statistical measures are used to quantify the network prediction accuracy,confirming that the predicted stress-strain curves of concrete-like materials at high strain rates by the proposed networks agree sufficiently with those by FE simulations.It is found that compared with BP network,the GA-BP network can effectively stabilize the network structure,indicating that the GA optimization improves the prediction accuracy of the SHPB dynamic responses by performing the crossover and mutation operations of weights and thresholds in the original BP network.By eliminating the long-time dependencies,the proposed LSTM network achieves better results than the BP and GA-BP networks,since smaller mean square error(MSE)and higher correlation coefficient are achieved.More importantly,the proposed LSTM algorithm,after the training process with a limited number of FE simulations,could replace the time-consuming and laborious FE pre-and post-processing and modelling.展开更多
Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The ma...Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.展开更多
Thanks to the strong perpendicular magnetic anisotropy(PMA), excellent processing compatibility as well as novel spintronic phenomenon, Co/Pt multilayers have been attracting massive attention and widely used in magne...Thanks to the strong perpendicular magnetic anisotropy(PMA), excellent processing compatibility as well as novel spintronic phenomenon, Co/Pt multilayers have been attracting massive attention and widely used in magnetic storage.However, reversed magnetic domains come into being with the increasing layer repetition ‘N’ to reduce magneto-static energy, resulting in the remarkable diminishment of the remanent magnetization(Mr). As a result, the product of Mrand thickness(i.e., the remanent moment-thickness product, Mrt), a key parameter in magnetic recording for reliable data storing and reading, also decreases dramatically. To overcome this issue, we deposit an ultra-thick granular [Co/Pt]80multilayer with a total thickness of 68 nm on granular SiNxbuffer layer. The Mrt value, Mrto saturation magnetization(Ms) ratio as well as out of plane(OOP) coercivity(Hcoop) are high up to 2.97 memu/cm^(2), 67%, and 1940 Oe(1 Oe = 79.5775 A·m^(-1)),respectively, which is remarkably improved compared with that of continuous [Co/Pt]80multilayers. That is because large amounts of grain boundaries in the granular multilayers can efficiently impede the propagation and expansion of reversed magnetic domains, which is verified by experimental investigations and micromagnetic simulation results. The simulation results also indicate that the value of Mrt, Mr/Msratio, and Hcoopcan be further improved through optimizing the granule size, which can be experimentally realized by manipulating the process parameter of SiNxbuffer layer. This work provides an alternative solution for achieving high Mrt value in ultra-thick Co/Pt multilayers, which is of unneglectable potential in applications of high-density magnetic recording.展开更多
Fifteen periods of Si/Si_(0.7)Ge_(0.3)multilayers(MLs)with various Si Ge thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition(RPCVD).Several methods were utilized to characte...Fifteen periods of Si/Si_(0.7)Ge_(0.3)multilayers(MLs)with various Si Ge thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition(RPCVD).Several methods were utilized to characterize and analyze the ML structures.The high resolution transmission electron microscopy(HRTEM)results show that the ML structure with 20 nm Si_(0.7)Ge_(0.3)features the best crystal quality and no defects are observed.Stacked Si_(0.7)Ge_(0.3)ML structures etched by three different methods were carried out and compared,and the results show that they have different selectivities and morphologies.In this work,the fabrication process influences on Si/Si Ge MLs are studied and there are no significant effects on the Si layers,which are the channels in lateral gate all around field effect transistor(L-GAAFET)devices.For vertically-stacked dynamic random access memory(VS-DRAM),it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical thickness.These results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires,nanosheet L-GAAFETs,and DRAM devices.展开更多
Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are investigated.Radiation-induced changes including idealized Schottky inte...Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are investigated.Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance(RON)are observed under 10-Me V proton irradiation at a fluence of 10^(14)cm^(-2).Because of the existing negative polarization charges induced at GaN/AlGaN interface,the dynamic ON-resistance(RON,dyn)shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by protons.Furthermore,the normalized RON,dynincreases by only 14%that of the initial case after a 100-s-long bias of-600 V has been applied to the irradiated devices.The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.展开更多
This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature ...This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature as well as reduce the influence of resistance-temperature dependency.Considering the degraded circuit performance caused by the process deviation,the trimmable module of the temperature coefficient(TC)is introduced to improve the circuit stability.The circuit has the advantages of simple structure,high linear stability,high TC accuracy,and trimmable TC.It consumes an area of 0.09 mm^(2)when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor(CMOS)process.The proposed circuit achieves the simulated power supply rejection(PSR)of about-78.7 dB@1 kHz,the measured TC of~4.7 ppm/℃over a wide temperature range from-55℃to 125℃with the 2.5-V single-supply voltage,and the tested line regulation of 0.10 mV/V.Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems.展开更多
The reentry trajectory planning for hypersonic vehicles is critical and challenging in the presence of numerous nonlinear equations of motion and path constraints, as well as guaranteed satisfaction of accuracy in mee...The reentry trajectory planning for hypersonic vehicles is critical and challenging in the presence of numerous nonlinear equations of motion and path constraints, as well as guaranteed satisfaction of accuracy in meeting all the specified boundary conditions. In the last ten years, many researchers have investigated various strategies to generate a feasible or optimal constrained reentry trajectory for hypersonic vehicles. This paper briefly reviews the new research efforts to promote the capability of reentry trajectory planning. The progress of the onboard reentry trajectory planning, reentry trajectory optimization, and landing footprint is summarized. The main challenges of reentry trajectory planning for hypersonic vehicles are analyzed, focusing on the rapid reentry trajectory optimization, complex geographic constraints, and cooperative strategies.展开更多
Based on the heat diffusion equation of multilevel interconnects,a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented,which can compute quickly the temperatu...Based on the heat diffusion equation of multilevel interconnects,a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented,which can compute quickly the temperature of multilevel interconnects,with substrate temperature given.Based on the proposed model and the 65 nm complementary metal oxide semiconductor (CMOS) process parameter,the temperature of nano-scale interconnects is computed.The computed results show that the via effect has a great effect on local interconnects,but the reduction of thermal conductivity has little effect on local interconnects.With the reduction of thermal conductivity or the increase of current density,however,the temperature of global interconnects rises greatly,which can result in a great deterioration in their performance.The proposed model can be applied to computer aided design (CAD) of very large-scale integrated circuits (VLSIs) in nano-scale technologies.展开更多
Paint removal from steel structure is executed for shipyards of marine and offshore engineering.Due to environmental unfriendliness and unhealthy drawbacks of sand blasting technique, laser ablation technique is propo...Paint removal from steel structure is executed for shipyards of marine and offshore engineering.Due to environmental unfriendliness and unhealthy drawbacks of sand blasting technique, laser ablation technique is proposed as a substituting method.By absorbing high energy of the 1064 nm pulsed laser, the paint is vaporized quickly.The ablated debris is then collected by using a suction pump.Initial metal surface of the steel is exposed when laser beam irradiates perpendicularly and scans over it.The cleaned surface fulfills the requirements of surface preparation standards ISO 8501 of SA2.The adhesion is further characterized with pull-off test after carrying out painting with Jotamastic 87 aluminum paint.The repainting can be embedded onto the laser cleaned surface to bond much more tightly.The excellent adhesion strength of 20 MPa between repainted coating and the substrate is achieved, which is higher than what is required by shipyards applications.展开更多
Low Voltage Differential Signaling (LVDS) has become a popular choice for high-speed serial links to conquer the bandwidth bottleneck of intra-chip data transmission. This paper presents the design and the implementat...Low Voltage Differential Signaling (LVDS) has become a popular choice for high-speed serial links to conquer the bandwidth bottleneck of intra-chip data transmission. This paper presents the design and the implementation of LVDS Input/Output (I/O) interface circuits in a standard 0.18 μm CMOS technology using thick gate oxide devices (3.3 V), fully compatible with LVDS standard. In the proposed transmitter, a novel Common-Mode FeedBack (CMFB)circuit is utilized to keep the common-mode output voltage stable over Process, supply Voltage and Temperature (PVT) variations. Because there are no area greedy resistors in the CMFB circuitry, the disadvantage of large die area in existing transmitter structures is avoided. To obtain sufficient gain, the receiver consists of three am- plifying stages: a voltage amplifying stage, a transconductance amplifying stage, and a transimpedance amplifying stage. And to exclude inner nodes with high RC time constant, shunt-shunt negative feedback is introduced in the receiver. A novel active inductor shunt peaking structure is used in the receiver to fulfill the stringent requirements of high speed and wide Common-Mode Input Region (CMIR) without voltage gain, power dissipation and silicon area penalty. Simulation results show that data rates of 2 Gbps and 2.5 Gbps are achieved for the transmitter and receiver with power con- sumption of 13.2 mW and 8.3 mW respectively.展开更多
We demonstrate in-plane field-free-switching spin-orbit torque(SOT)magnetic tunnel junction(MTJ)devices that are capable of low switching current density,fast speed,high reliability,and,most importantly,manufactured u...We demonstrate in-plane field-free-switching spin-orbit torque(SOT)magnetic tunnel junction(MTJ)devices that are capable of low switching current density,fast speed,high reliability,and,most importantly,manufactured uniformly by the 200-mm-wafer platform.The performance of the devices is systematically studied,including their magnetic properties,switch-ing behaviors,endurance and data retention.The successful integration of SOT devices within the 200-mm-wafer manufactur-ing platform provides a feasible way to industrialize SOT MRAMs.It is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.展开更多
The effect of graphite surface modification on the thermal conductivity(TC) and bending strength of graphite flakes/Al composites(Gf/Al) prepared by gas pressure infiltration were investigated. Al3 Ni and Al4C3 phase ...The effect of graphite surface modification on the thermal conductivity(TC) and bending strength of graphite flakes/Al composites(Gf/Al) prepared by gas pressure infiltration were investigated. Al3 Ni and Al4C3 phase may form at the interface in Ni-coated Gf/Al and uncoated Gf/Al composites, respectively, while the Al-Cu compound cannot be observed in Cu-coated Gf/Al composites. The Cu and Ni coatings enhance TC and the bending strength of the composites in the meantime. TC of Cu-coated Gf/Al composites reach 515 Wm^-1·K^-1 with 75 vol% Gf, which are higher than that of Ni-coated Gf/Al. Meanwhile, due to Al3 Ni at the interface, the bending strength of Ni-coated Gf/Al composites are far more than those of the uncoated and Cu-coated Gf/Al with the same content of Gf. The results indicate that metal-coated Gf can effectively improve the interfacial bonding between Gf and Al.展开更多
基金The Qian Xuesen Youth Innovation Foundation from China Aerospace Science and Technology Corporation(Grant Number 2022JY51).
文摘The demand for adopting neural networks in resource-constrained embedded devices is continuously increasing.Quantization is one of the most promising solutions to reduce computational cost and memory storage on embedded devices.In order to reduce the complexity and overhead of deploying neural networks on Integeronly hardware,most current quantization methods use a symmetric quantization mapping strategy to quantize a floating-point neural network into an integer network.However,although symmetric quantization has the advantage of easier implementation,it is sub-optimal for cases where the range could be skewed and not symmetric.This often comes at the cost of lower accuracy.This paper proposed an activation redistribution-based hybrid asymmetric quantizationmethod for neural networks.The proposedmethod takes data distribution into consideration and can resolve the contradiction between the quantization accuracy and the ease of implementation,balance the trade-off between clipping range and quantization resolution,and thus improve the accuracy of the quantized neural network.The experimental results indicate that the accuracy of the proposed method is 2.02%and 5.52%higher than the traditional symmetric quantization method for classification and detection tasks,respectively.The proposed method paves the way for computationally intensive neural network models to be deployed on devices with limited computing resources.Codes will be available on https://github.com/ycjcy/Hybrid-Asymmetric-Quantization.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61627813,62204018,and 61571023)the Beijing Municipal Science and Technology Project(Grant No.Z201100004220002)+2 种基金the National Key Technology Program of China(Grant No.2017ZX01032101)the Program of Introducing Talents of Discipline to Universities in China(Grant No.B16001)the VR Innovation Platform from Qingdao Science and Technology Commission.
文摘Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.
基金supported by BUPT Excellent Ph.D. Students Foundation (CX2023301)in part by the National Natural Science Foundation of China (62204019)
文摘The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.
文摘The data analysis of blasting sites has always been the research goal of relevant researchers.The rise of mobile blasting robots has aroused many researchers’interest in machine learning methods for target detection in the field of blasting.Serverless Computing can provide a variety of computing services for people without hardware foundations and rich software development experience,which has aroused people’s interest in how to use it in the field ofmachine learning.In this paper,we design a distributedmachine learning training application based on the AWS Lambda platform.Based on data parallelism,the data aggregation and training synchronization in Function as a Service(FaaS)are effectively realized.It also encrypts the data set,effectively reducing the risk of data leakage.We rent a cloud server and a Lambda,and then we conduct experiments to evaluate our applications.Our results indicate the effectiveness,rapidity,and economy of distributed training on FaaS.
基金supported by the National Natural Science Foundation of China (No. 52175148)the Natural Science Foundation of Shaanxi Province (No. 2021KW-25)+1 种基金the Open Cooperation Innovation Fund of Xi’an Modern Chemistry Research Institute (No. SYJJ20210409)the Fundamental Research Funds for the Central Universities (No. 3102018ZY015)
文摘Machine learning(ML)methods with good applicability to complex and highly nonlinear sequences have been attracting much attention in recent years for predictions of complicated mechanical properties of various materials.As one of the widely known ML methods,back-propagation(BP)neural networks with and without optimization by genetic algorithm(GA)are also established for comparisons of time cost and prediction error.With the aim to further increase the prediction accuracy and efficiency,this paper proposes a long short-term memory(LSTM)networks model to predict the dynamic compressive performance of concrete-like materials at high strain rates.Dynamic explicit analysis is performed in the finite element(FE)software ABAQUS to simulate various waveforms in the split Hopkinson pressure bar(SHPB)experiments by applying different stress waves in the incident bar.The FE simulation accuracy is validated against SHPB experimental results from the viewpoint of dynamic increase factor.In order to cover more extensive loading scenarios,60 sets of FE simulations are conducted in this paper to generate three kinds of waveforms in the incident and transmission bars of SHPB experiments.By training the proposed three networks,the nonlinear mapping relations can be reasonably established between incident,reflect,and transmission waves.Statistical measures are used to quantify the network prediction accuracy,confirming that the predicted stress-strain curves of concrete-like materials at high strain rates by the proposed networks agree sufficiently with those by FE simulations.It is found that compared with BP network,the GA-BP network can effectively stabilize the network structure,indicating that the GA optimization improves the prediction accuracy of the SHPB dynamic responses by performing the crossover and mutation operations of weights and thresholds in the original BP network.By eliminating the long-time dependencies,the proposed LSTM network achieves better results than the BP and GA-BP networks,since smaller mean square error(MSE)and higher correlation coefficient are achieved.More importantly,the proposed LSTM algorithm,after the training process with a limited number of FE simulations,could replace the time-consuming and laborious FE pre-and post-processing and modelling.
基金the Tencent Foundation through the XPLORER PRIZEthe National Key Research and Development Program of China(Grant Nos.2018YFB0407602 and 2021YFB3601303)the National Natural Science Foundation of China(Grant Nos.61627813,11904017,92164206,and 61571023)。
文摘Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.
基金supported by the National Natural Science Foundation of China (Grant No. 51901008)the National Key Research and Development Program of China (Grant No. 2021YFB3201800)。
文摘Thanks to the strong perpendicular magnetic anisotropy(PMA), excellent processing compatibility as well as novel spintronic phenomenon, Co/Pt multilayers have been attracting massive attention and widely used in magnetic storage.However, reversed magnetic domains come into being with the increasing layer repetition ‘N’ to reduce magneto-static energy, resulting in the remarkable diminishment of the remanent magnetization(Mr). As a result, the product of Mrand thickness(i.e., the remanent moment-thickness product, Mrt), a key parameter in magnetic recording for reliable data storing and reading, also decreases dramatically. To overcome this issue, we deposit an ultra-thick granular [Co/Pt]80multilayer with a total thickness of 68 nm on granular SiNxbuffer layer. The Mrt value, Mrto saturation magnetization(Ms) ratio as well as out of plane(OOP) coercivity(Hcoop) are high up to 2.97 memu/cm^(2), 67%, and 1940 Oe(1 Oe = 79.5775 A·m^(-1)),respectively, which is remarkably improved compared with that of continuous [Co/Pt]80multilayers. That is because large amounts of grain boundaries in the granular multilayers can efficiently impede the propagation and expansion of reversed magnetic domains, which is verified by experimental investigations and micromagnetic simulation results. The simulation results also indicate that the value of Mrt, Mr/Msratio, and Hcoopcan be further improved through optimizing the granule size, which can be experimentally realized by manipulating the process parameter of SiNxbuffer layer. This work provides an alternative solution for achieving high Mrt value in ultra-thick Co/Pt multilayers, which is of unneglectable potential in applications of high-density magnetic recording.
基金supported in part by the Strategic Priority Research Program of the Chinese Academy of Sciences (Project ID.XDA0330300)in part by Innovation Program for Quantum Science and Technology (Project ID.2021ZD0302301)in part by the Youth Innovation Promotion Association of CAS (Project ID.2020037)。
文摘Fifteen periods of Si/Si_(0.7)Ge_(0.3)multilayers(MLs)with various Si Ge thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition(RPCVD).Several methods were utilized to characterize and analyze the ML structures.The high resolution transmission electron microscopy(HRTEM)results show that the ML structure with 20 nm Si_(0.7)Ge_(0.3)features the best crystal quality and no defects are observed.Stacked Si_(0.7)Ge_(0.3)ML structures etched by three different methods were carried out and compared,and the results show that they have different selectivities and morphologies.In this work,the fabrication process influences on Si/Si Ge MLs are studied and there are no significant effects on the Si layers,which are the channels in lateral gate all around field effect transistor(L-GAAFET)devices.For vertically-stacked dynamic random access memory(VS-DRAM),it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical thickness.These results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires,nanosheet L-GAAFETs,and DRAM devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.62104185)the Fundamental Research Funds for the Central Universities,China(Grant No.JB211103)+1 种基金the National Natural Science Foundation for Distinguished Young Scholars,China(Grant No.61925404)the Wuhu and Xidian University Special Fund for Industry–University-Research Cooperation,China(Grant No.XWYCXY-012021010)。
文摘Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are investigated.Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance(RON)are observed under 10-Me V proton irradiation at a fluence of 10^(14)cm^(-2).Because of the existing negative polarization charges induced at GaN/AlGaN interface,the dynamic ON-resistance(RON,dyn)shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by protons.Furthermore,the normalized RON,dynincreases by only 14%that of the initial case after a 100-s-long bias of-600 V has been applied to the irradiated devices.The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.
文摘This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature as well as reduce the influence of resistance-temperature dependency.Considering the degraded circuit performance caused by the process deviation,the trimmable module of the temperature coefficient(TC)is introduced to improve the circuit stability.The circuit has the advantages of simple structure,high linear stability,high TC accuracy,and trimmable TC.It consumes an area of 0.09 mm^(2)when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor(CMOS)process.The proposed circuit achieves the simulated power supply rejection(PSR)of about-78.7 dB@1 kHz,the measured TC of~4.7 ppm/℃over a wide temperature range from-55℃to 125℃with the 2.5-V single-supply voltage,and the tested line regulation of 0.10 mV/V.Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems.
基金supported by the National Natural Science Foundation of China(6127334961203223+1 种基金61175109)the Innovation Foundation of BUAA for Ph.D.Graduates(YWF-14-YJSY-013)
文摘The reentry trajectory planning for hypersonic vehicles is critical and challenging in the presence of numerous nonlinear equations of motion and path constraints, as well as guaranteed satisfaction of accuracy in meeting all the specified boundary conditions. In the last ten years, many researchers have investigated various strategies to generate a feasible or optimal constrained reentry trajectory for hypersonic vehicles. This paper briefly reviews the new research efforts to promote the capability of reentry trajectory planning. The progress of the onboard reentry trajectory planning, reentry trajectory optimization, and landing footprint is summarized. The main challenges of reentry trajectory planning for hypersonic vehicles are analyzed, focusing on the rapid reentry trajectory optimization, complex geographic constraints, and cooperative strategies.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 60676009 and 60725415)the National High Technology Research and Development Program of China (Grant Nos 2009AA01Z258 and 2009AA01Z260)
文摘Based on the heat diffusion equation of multilevel interconnects,a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented,which can compute quickly the temperature of multilevel interconnects,with substrate temperature given.Based on the proposed model and the 65 nm complementary metal oxide semiconductor (CMOS) process parameter,the temperature of nano-scale interconnects is computed.The computed results show that the via effect has a great effect on local interconnects,but the reduction of thermal conductivity has little effect on local interconnects.With the reduction of thermal conductivity or the increase of current density,however,the temperature of global interconnects rises greatly,which can result in a great deterioration in their performance.The proposed model can be applied to computer aided design (CAD) of very large-scale integrated circuits (VLSIs) in nano-scale technologies.
基金supported by the National Natural Science Foundation of China (U1609209)National Natural Science Foundation of China (61605162)+2 种基金NSFC-Liaoning Province united foundation (U1608259)National Natural Science Foundation of China (51501219)the financial support from the China Scholarship Council
文摘Paint removal from steel structure is executed for shipyards of marine and offshore engineering.Due to environmental unfriendliness and unhealthy drawbacks of sand blasting technique, laser ablation technique is proposed as a substituting method.By absorbing high energy of the 1064 nm pulsed laser, the paint is vaporized quickly.The ablated debris is then collected by using a suction pump.Initial metal surface of the steel is exposed when laser beam irradiates perpendicularly and scans over it.The cleaned surface fulfills the requirements of surface preparation standards ISO 8501 of SA2.The adhesion is further characterized with pull-off test after carrying out painting with Jotamastic 87 aluminum paint.The repainting can be embedded onto the laser cleaned surface to bond much more tightly.The excellent adhesion strength of 20 MPa between repainted coating and the substrate is achieved, which is higher than what is required by shipyards applications.
基金Project supported by the National Natural Science Foundation of China （Grant No 60376001）, the National Basic Research Program of China （Grant No 2002CB311904） and the National Defense Basic Research Program of China （Grant No 51327020202）. Acknowledgments The authors would like to thank Li Cheng-Ji and Ye Xiao-Ling of Institute of Semiconductors, Chinese Academy of Sciences for measuring the temperaturedependent resistivity and absorption, respectively, and they also thank Ma Nong-Nong at the Centre of Electronic Materials Characterization of Tianjin Electronic Materials Research Institute for performing SIMS measurements.
文摘Low Voltage Differential Signaling (LVDS) has become a popular choice for high-speed serial links to conquer the bandwidth bottleneck of intra-chip data transmission. This paper presents the design and the implementation of LVDS Input/Output (I/O) interface circuits in a standard 0.18 μm CMOS technology using thick gate oxide devices (3.3 V), fully compatible with LVDS standard. In the proposed transmitter, a novel Common-Mode FeedBack (CMFB)circuit is utilized to keep the common-mode output voltage stable over Process, supply Voltage and Temperature (PVT) variations. Because there are no area greedy resistors in the CMFB circuitry, the disadvantage of large die area in existing transmitter structures is avoided. To obtain sufficient gain, the receiver consists of three am- plifying stages: a voltage amplifying stage, a transconductance amplifying stage, and a transimpedance amplifying stage. And to exclude inner nodes with high RC time constant, shunt-shunt negative feedback is introduced in the receiver. A novel active inductor shunt peaking structure is used in the receiver to fulfill the stringent requirements of high speed and wide Common-Mode Input Region (CMIR) without voltage gain, power dissipation and silicon area penalty. Simulation results show that data rates of 2 Gbps and 2.5 Gbps are achieved for the transmitter and receiver with power con- sumption of 13.2 mW and 8.3 mW respectively.
基金supported by the National Key Research and Development Program of China(Grant Nos.2021YFB3601303,2021YFB3601304,2021YFB3601300)National Natural Science Foundation of China(Nos.62001014 and 62171013)。
文摘We demonstrate in-plane field-free-switching spin-orbit torque(SOT)magnetic tunnel junction(MTJ)devices that are capable of low switching current density,fast speed,high reliability,and,most importantly,manufactured uniformly by the 200-mm-wafer platform.The performance of the devices is systematically studied,including their magnetic properties,switch-ing behaviors,endurance and data retention.The successful integration of SOT devices within the 200-mm-wafer manufactur-ing platform provides a feasible way to industrialize SOT MRAMs.It is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.
基金Funded by the Research Fund of the State Key Laboratory of Solidification Processing(NWPU),China(No.126-QP-2015).
文摘The effect of graphite surface modification on the thermal conductivity(TC) and bending strength of graphite flakes/Al composites(Gf/Al) prepared by gas pressure infiltration were investigated. Al3 Ni and Al4C3 phase may form at the interface in Ni-coated Gf/Al and uncoated Gf/Al composites, respectively, while the Al-Cu compound cannot be observed in Cu-coated Gf/Al composites. The Cu and Ni coatings enhance TC and the bending strength of the composites in the meantime. TC of Cu-coated Gf/Al composites reach 515 Wm^-1·K^-1 with 75 vol% Gf, which are higher than that of Ni-coated Gf/Al. Meanwhile, due to Al3 Ni at the interface, the bending strength of Ni-coated Gf/Al composites are far more than those of the uncoated and Cu-coated Gf/Al with the same content of Gf. The results indicate that metal-coated Gf can effectively improve the interfacial bonding between Gf and Al.
