An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Sp...An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre,in order to predict device characteristics such as threshold voltage,drain current and gate capacitance.The drain current model incorporates important physical effects such as velocity saturation,short channel effects like DIBL（drain induced barrier lowering）,channel length modulation（CLM）,and mobility degradation due to self-heating.The predicted Id–V（ds）,Id–V（gs）,and C–V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model.The developed model was then utilized to design and simulate a single-pole single-throw（SPST）RF switch.展开更多
An improved small-signal parameter extraction technique for short channel enhancement-mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional analytical method and optimization techniques. The ...An improved small-signal parameter extraction technique for short channel enhancement-mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional analytical method and optimization techniques. The extrinsic parameters such as parasitic capacitance, inductance and resistance are extracted under the pinch-off condition. The intrinsic parameters of the small-signal equivalent circuit（SSEC） have been extracted including gate forward and backward conductance. Different optimization algorithms such as PSO, Quasi Newton and Firefly optimization algorithm is applied to the extracted parameters to minimize the error between modeled and measured S-parameters. The different optimized SSEC models have been validated by comparing the S-parameters and unity current-gain with TCAD simulations and available experimental data from the literature. It is observed that the Firefly algorithm based optimization approach accurately extracts the small-signal model parameters as compared to other optimization algorithm techniques with a minimum error percentage of 1.3%.展开更多
We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas（2DEG） density and surface potential for Al Ga N/Ga N metal oxide semiconductor high electron ...We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas（2DEG） density and surface potential for Al Ga N/Ga N metal oxide semiconductor high electron mobility transistors（MOSHEMT）. The developed model includes important parameters like polarization charge density at oxide/Al Ga N and Al Ga N/Ga N interfaces, interfacial defect oxide charges and donor charges at the surface of the Al Ga N barrier. The effects of two different gate oxides（Al_2O_3 and HfO_2/ are compared for the performance evaluation of the proposed MOSHEMT. The MOSHEMTs with Al_2O_3 dielectric have an advantage of significant increase in 2DEG up to 1.2 10^（13） cm^2 with an increase in oxide thickness up to 10 nm as compared to HfO_2 dielectric MOSHEMT. The surface potential for HfO_2 based device decreases from 2 to –1.6 e V within10 nm of oxide thickness whereas for the Al_2O_3 based device a sharp transition of surface potential occurs from 2.8to –8.3 e V. The variation in oxide thickness and gate metal work function of the proposed MOSHEMT shifts the threshold voltage from negative to positive realizing the enhanced mode operation. Further to validate the model,the device is simulated in Silvaco Technology Computer Aided Design（TCAD） showing good agreement with the proposed model results. The accuracy of the developed calculations of the proposed model can be used to develop a complete physics based 2DEG sheet charge density and threshold voltage model for Ga N MOSHEMT devices for performance analysis.展开更多
The effect of doped-ZnO transparent conductive oxide （TCO） with metal （Ag）-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dop...The effect of doped-ZnO transparent conductive oxide （TCO） with metal （Ag）-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dopant elements （such as B, A1, Ga, In and Sn） with ZnO as a top TCO layer is studied. A comparative analysis of metal square pad electrode, metal grid pattern electrode and metal-finger/ZnO type electrodes are taken into consideration to ensure the effect of anti-reflectivity by ZnO. The effect of thickness of ZnO and i-InGaN layer on performance of solar cell is also studied in detail. The proposed solar cell structure with Ag-fingers/ZnO：Al as top contact electrode shows interesting device characteristics compared to other dopants and metal top electrodes. The device achieves open circuit voltage -2.525 V, short circuit current -4.256 mA/cm^2, fill factor -87.86% and efficiency -9.22% under 1 Sun, air mass 1.5 global illumination.展开更多
基金TEQIP-II funded Silvaco TCADSMDP-II funded Cadence Tool in Department of Electronics and Communication Engineering,NIT Silchar for carrying out the research work
文摘An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre,in order to predict device characteristics such as threshold voltage,drain current and gate capacitance.The drain current model incorporates important physical effects such as velocity saturation,short channel effects like DIBL（drain induced barrier lowering）,channel length modulation（CLM）,and mobility degradation due to self-heating.The predicted Id–V（ds）,Id–V（gs）,and C–V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model.The developed model was then utilized to design and simulate a single-pole single-throw（SPST）RF switch.
基金project under the Visvesvaraya PhD Scheme of the Ministry of Electronics&Information Technology,Government of India,being implemented by the Digital IndiaCorporation (formerly Media Lab Asia)TEQIP-Ⅱ funding for facilitating Silvaco TCAD and Keysight's ADS tools for carrying out the research work
文摘An improved small-signal parameter extraction technique for short channel enhancement-mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional analytical method and optimization techniques. The extrinsic parameters such as parasitic capacitance, inductance and resistance are extracted under the pinch-off condition. The intrinsic parameters of the small-signal equivalent circuit（SSEC） have been extracted including gate forward and backward conductance. Different optimization algorithms such as PSO, Quasi Newton and Firefly optimization algorithm is applied to the extracted parameters to minimize the error between modeled and measured S-parameters. The different optimized SSEC models have been validated by comparing the S-parameters and unity current-gain with TCAD simulations and available experimental data from the literature. It is observed that the Firefly algorithm based optimization approach accurately extracts the small-signal model parameters as compared to other optimization algorithm techniques with a minimum error percentage of 1.3%.
文摘We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas（2DEG） density and surface potential for Al Ga N/Ga N metal oxide semiconductor high electron mobility transistors（MOSHEMT）. The developed model includes important parameters like polarization charge density at oxide/Al Ga N and Al Ga N/Ga N interfaces, interfacial defect oxide charges and donor charges at the surface of the Al Ga N barrier. The effects of two different gate oxides（Al_2O_3 and HfO_2/ are compared for the performance evaluation of the proposed MOSHEMT. The MOSHEMTs with Al_2O_3 dielectric have an advantage of significant increase in 2DEG up to 1.2 10^（13） cm^2 with an increase in oxide thickness up to 10 nm as compared to HfO_2 dielectric MOSHEMT. The surface potential for HfO_2 based device decreases from 2 to –1.6 e V within10 nm of oxide thickness whereas for the Al_2O_3 based device a sharp transition of surface potential occurs from 2.8to –8.3 e V. The variation in oxide thickness and gate metal work function of the proposed MOSHEMT shifts the threshold voltage from negative to positive realizing the enhanced mode operation. Further to validate the model,the device is simulated in Silvaco Technology Computer Aided Design（TCAD） showing good agreement with the proposed model results. The accuracy of the developed calculations of the proposed model can be used to develop a complete physics based 2DEG sheet charge density and threshold voltage model for Ga N MOSHEMT devices for performance analysis.
基金TEQIP-II for funding towards Silvaco TCAD Tool for carrying out the research work
文摘The effect of doped-ZnO transparent conductive oxide （TCO） with metal （Ag）-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dopant elements （such as B, A1, Ga, In and Sn） with ZnO as a top TCO layer is studied. A comparative analysis of metal square pad electrode, metal grid pattern electrode and metal-finger/ZnO type electrodes are taken into consideration to ensure the effect of anti-reflectivity by ZnO. The effect of thickness of ZnO and i-InGaN layer on performance of solar cell is also studied in detail. The proposed solar cell structure with Ag-fingers/ZnO：Al as top contact electrode shows interesting device characteristics compared to other dopants and metal top electrodes. The device achieves open circuit voltage -2.525 V, short circuit current -4.256 mA/cm^2, fill factor -87.86% and efficiency -9.22% under 1 Sun, air mass 1.5 global illumination.
