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Determination of Double Beta Decay Half-Life of 136Xe with the PandaX-4T Natural Xenon Detector
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作者 Lin Si Zhaokan Cheng +83 位作者 Abdusalam Abdukerim Zihao Bo Wei Chen Xun Chen Yunhua Chen Chen Cheng Yunshan Cheng Xiangyi Cui Yingjie Fan Deqing Fang Changbo Fu Mengting Fu Lisheng Geng Karl Giboni Linhui Gu Xuyuan Guo Ke Han Changda He Jinrong He Di Huang Yanlin Huang Zhou Huang Ruquan Hou Xiangdong Ji Yonglin Ju Chenxiang Li Jiafu Li Mingchuan Li Shu Li Shuaijie Li Qing Lin Jianglai Liu Xiaoying Lu Lingyin Luo Yunyang Luo Wenbo Ma Yugang Ma Yujun Mao Yue Meng Nasir Shaheed Xiaofeng Shang Xuyang Ning Ningchun Qi Zhicheng Qian Xiangxiang Ren Changsong Shang Guofang Shen Wenliang Sun Andi Tan Yi Tao Anqing Wang Meng Wang Qiuhong Wang Shaobo Wang Siguang Wang Wei Wang Xiuli Wang Zhou Wang Yuehuan Wei Mengmeng Wu Weihao Wu Jingkai Xia Mengjiao Xiao Xiang Xiao Pengwei Xie Binbin Yan Xiyu Yan Yong Yang Chunxu Yu Jumin Yuan Ying Yuan Zhe Yuan Dan Zhang Minzhen Zhang Peng Zhang Shibo Zhang Shu Zhang Tao Zhang Li Zhao Qibin Zheng Jifang Zhou Ning Zhou Xiaopeng Zhou Yong Zhou 《Research》 SCIE EI CSCD 2023年第2期33-41,共9页
Precise measurement of two-neutrino double beta decay(DBD)half-life is an important step for the searches of Majorana neutrinos with neutrinoless double beta decay.We report the measurement of DBD half-life of 136xe u... Precise measurement of two-neutrino double beta decay(DBD)half-life is an important step for the searches of Majorana neutrinos with neutrinoless double beta decay.We report the measurement of DBD half-life of 136xe using the Pandax-4T dual-phase Time Projection Chamber(TPC)with 3.7-tonne natural xenon and the first 94.9-day physics data release. 展开更多
关键词 DECAY double DETERMINATION
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Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes 被引量:1
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作者 Ruiyuan Yin Chiachia Li +6 位作者 Bin Zhang Jinyan Wang Yunyi Fu Cheng P.Wen Yilong Hao Bo Shen Maojun Wang 《Fundamental Research》 CAS 2022年第4期629-634,共6页
In this study,the physical properties of F ion-implanted GaN were thoroughly studied,and the related electric-field modulation mechanisms in ion-implanted edge termination were revealed.Transmission electron microscop... In this study,the physical properties of F ion-implanted GaN were thoroughly studied,and the related electric-field modulation mechanisms in ion-implanted edge termination were revealed.Transmission electron microscopy re.sults indicate that the ion-implanted region maintains a single-crystal structure even with the implantation of high-energy F ions,indicating that the high resistivity of the edge termination region is not induced by amorphization.Alternately,ion implantation-induced deep levels could compensate the electrons and lead to a highly resistive layer In addition to the bulk ffect,the direct bombardment of high-energy F ions resulted in a rough and nitrogen-deficient surface,which was confirmed via atomic force microscopy(AFM)and X-ray photoelectron spectroscopy,The implanted surface with a large density of nitrogen vacancies can accommodate electrons,and it is more conductive than the bulk in the implanted region,which is validated via spreading resistance profiling and conductive AFM measurements.Under reverse bias,the implanted surface can spread the potential in the lateral direction,whereas the acceptor traps capture electrons acting as space charges,shifting the peak electric field into the bulk region in the vertical direction.As a result,the Schottky barrier diode terminated with high-energy F ion-implanted regions exhibits a breakdown voltage of over 1.2 kv. 展开更多
关键词 lon implantation Edge termination Electri field modulationeffect GAN Schottky barrier diodes
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