The kinetics of extraction and stripping of copper （Ⅱ） was investigated by the single drop technique with a new extractant N902 （a derivative of the salicylal-doxime） and the rate equations of extraction and stri...The kinetics of extraction and stripping of copper （Ⅱ） was investigated by the single drop technique with a new extractant N902 （a derivative of the salicylal-doxime） and the rate equations of extraction and stripping were derived, respectively. The apparent activation energies of extraction and stripping were estimated to be 20.14 kJ/mol and 30.0 k J/mol.展开更多
As the scaling-down of non-volatile memory （NVM） cells continues, the impact of shallow trench isolation （STI） on NVM cells becomes more severe. It has been observed in the 90nm localized charge-trapping non-volat...As the scaling-down of non-volatile memory （NVM） cells continues, the impact of shallow trench isolation （STI） on NVM cells becomes more severe. It has been observed in the 90nm localized charge-trapping non-volatile memory （NROMTM） that the programming efficiency of edge cells adjacent to STI is remarkably lower than that of other cells when channel hot electron injection is applied. Boron segregation is found to be mainly responsible for the low programming efficiency of edge cells. Meanwhile, an additional boron implantation of 10°tilt at the active area edge as a new solution to solve this problem is developed.展开更多
We report the analysis and TCAD results of a gate-all-around cylindrical （GAAC） FinFET with operation based on channel accumulation. The cylindrical channel of the GAAC FinFET is essentially controlled by an infinit...We report the analysis and TCAD results of a gate-all-around cylindrical （GAAC） FinFET with operation based on channel accumulation. The cylindrical channel of the GAAC FinFET is essentially controlled by an infinite number of gates surrounding the cylinder-shaped channel. The symmetrical nature of the field in the channel leads to improved electrical characteristics, e.g. reduced leakage current and negligible corner effects. The Ion/Ioff ratio of the device can be larger than 106, as the key parameter for device operation. The GAAC FinFET operating in accumulation mode appears to be a good potential candidate for scaling down to sub-10 nm sizes.展开更多
The influence of shallow trench isolation（STI） on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments.It has been found that the performance of edge me...The influence of shallow trench isolation（STI） on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments.It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably.The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem.In order to mitigate the STI impact,an added boron implantation in the STI region is developed as a new solution.Four kinds of boron implantation experiments have been implemented to evaluate the impact of STI on edge cells,respectively.The experimental results show that the performance of edge cells can be greatly improved through optimizing added boron implantation technology.展开更多
基金Project supported by the Shanghai Leading Academic Discipline Project(Grant No.S30109)the Opening Project of Key Laboratory of Solid Waste Treatment and Resource Recycle(SWUST)+1 种基金the Ministry of Education(Grant No.09zxgk02)the Science and Technology Commission of Shanghai Municipality(Grant No.09DZ1204403)
文摘The kinetics of extraction and stripping of copper （Ⅱ） was investigated by the single drop technique with a new extractant N902 （a derivative of the salicylal-doxime） and the rate equations of extraction and stripping were derived, respectively. The apparent activation energies of extraction and stripping were estimated to be 20.14 kJ/mol and 30.0 k J/mol.
文摘As the scaling-down of non-volatile memory （NVM） cells continues, the impact of shallow trench isolation （STI） on NVM cells becomes more severe. It has been observed in the 90nm localized charge-trapping non-volatile memory （NROMTM） that the programming efficiency of edge cells adjacent to STI is remarkably lower than that of other cells when channel hot electron injection is applied. Boron segregation is found to be mainly responsible for the low programming efficiency of edge cells. Meanwhile, an additional boron implantation of 10°tilt at the active area edge as a new solution to solve this problem is developed.
文摘We report the analysis and TCAD results of a gate-all-around cylindrical （GAAC） FinFET with operation based on channel accumulation. The cylindrical channel of the GAAC FinFET is essentially controlled by an infinite number of gates surrounding the cylinder-shaped channel. The symmetrical nature of the field in the channel leads to improved electrical characteristics, e.g. reduced leakage current and negligible corner effects. The Ion/Ioff ratio of the device can be larger than 106, as the key parameter for device operation. The GAAC FinFET operating in accumulation mode appears to be a good potential candidate for scaling down to sub-10 nm sizes.
文摘The influence of shallow trench isolation（STI） on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments.It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably.The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem.In order to mitigate the STI impact,an added boron implantation in the STI region is developed as a new solution.Four kinds of boron implantation experiments have been implemented to evaluate the impact of STI on edge cells,respectively.The experimental results show that the performance of edge cells can be greatly improved through optimizing added boron implantation technology.
