The development of semiconductors is always accompanied by the progress in controllable doping techniques.Taking AlGaN-based ultraviolet(UV)emitters as an example,despite a peak wall-plug efficiency of 15.3%at the wav...The development of semiconductors is always accompanied by the progress in controllable doping techniques.Taking AlGaN-based ultraviolet(UV)emitters as an example,despite a peak wall-plug efficiency of 15.3%at the wavelength of 275 nm,there is still a huge gap in comparison with GaN-based visible light-emitting diodes(LEDs),mainly attributed to the inefficient doping of AlGaN with increase of the Al composition.First,p-doping of Al-rich AlGaN is a long-standing challenge and the low hole concentration seriously restricts the carrier injection efficiency.Although p-GaN cladding layers are widely adopted as a compromise,the high injection barrier of holes as well as the inevitable loss of light extraction cannot be neglected.While in terms of n-doping the main issue is the degradation of the electrical property when the Al composition exceeds 80%,resulting in a low electrical efficiency in sub-250 nm UV-LEDs.This review summarizes the recent advances and outlines the major challenges in the efficient doping of Al-rich AlGaN,meanwhile the corresponding approaches pursued to overcome the doping issues are discussed in detail.展开更多
The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN he...The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures is higher than that in Alo.25Gao.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Gao.75N/CaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the Iny Can-yN/GaN heterointerface induced by the compressive strain in the InyCal-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.展开更多
Influence of width of left well in AlxGa1-xN/GaN double quantum wells （DQWs） on absorption eoefficients and wavelengths of the intersubband transitions （ISBTs） is investigated by solving the Sehroedinger and Poiss...Influence of width of left well in AlxGa1-xN/GaN double quantum wells （DQWs） on absorption eoefficients and wavelengths of the intersubband transitions （ISBTs） is investigated by solving the Sehroedinger and Poisson equations self-consistently. When the width of left well is 1.79 nm, three-energy-level DQWs are realized. The ISBT between the first odd and second odd order subbands （the lodd-2odd ISBT） has a comparable absorption eoefficient with the lodd-2even ISBT. Their wavelengths are located at 1.3 and 1.55 μm, respectively. When the width of left well is 1.48nm, a four-energy-level DQWs is realized. The calculated results have a possible application to ultrafast two-eolour optoeleetronie devices operating within the optical communication wavelength range.展开更多
By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1...By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1-xN/GaN heterointerface and their elimination by subsequent annealing in AlxGa1-xN/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75× 10^12 cm^-2.eV^-1. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N2 ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.展开更多
Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al0.45Ga0.55N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky...Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al0.45Ga0.55N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky,the samples were thermal annealed in the N2 gas at 400 ℃.The reverse leakage current density of Al0.45Ga0.55N Schottky diode was reduced by 2 orders of magnitude at-10 V.The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing.Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies.The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.展开更多
Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradi...Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.展开更多
The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical A1N/GaN coupled double quantum wells （CDQWs） has been investigated by solving SchrSdinger and Poisson equa...The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical A1N/GaN coupled double quantum wells （CDQWs） has been investigated by solving SchrSdinger and Poisson equations self-consistently. It is found that the absorption coefficient of the intersubband transition （ISBT） between the ground state and the third excited state （lodd - 2even） can be equal to zero when the electric fields are applied in asymmetrical A1N/GaN CDQWs, which is related to applied electric fields induced symmetry recovery of these states. Meanwhile, the energy distances between 1odd - 2even and 1even - 2even subbands have different relationships from each other with the increase of applied electric fields due to the different polarization-induced potential drops between the left and the right wells. The results indicate that an electrical-optical modulator operated within the opto-communication wavelength range can be realized in spite of the strong polarization-induced electric fields in asymmetrical A1N/GaN CDQWs.展开更多
Thin tungsten nitride （WNx） films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviour...Thin tungsten nitride （WNx） films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WNx contact was investigated under various annealing conditions by current-voltage （I-V） measurements. The results show that the gate leakage current was reduced to 10-6 A/cm2 when the N2 flow is 400 mL/min. The results also show that the WNx contact improved the thermal stability of Schottky contacts, Finally, the current transport mechanism in WNx/AlGaN/GaN Schottky diodes has been investigated by means of I-V characterisation technique at various temperatures between 300 K and 523 K. ATE model with a Gaussian distribution of Schottky barrier heights （SBHs） is thought to be responsible for the electrical behaviour at temperatures lower than 523 K.展开更多
This paper calculates the wavelengths of the interband transitions as a function of the Al mole fraction of AlxGa1-xN bulk materml. It is finds that when the Al mole fraction is between 0.456 and 0.639, the wavelength...This paper calculates the wavelengths of the interband transitions as a function of the Al mole fraction of AlxGa1-xN bulk materml. It is finds that when the Al mole fraction is between 0.456 and 0.639, the wavelengths correspond to the solar-blind （250 nm to 280 nm）. The influence of the structure parameters of AlyGa1-yN/GaN quantum wells on the wavelength and absorption coefficient of intersubband transitions has been investigated by solving the SchrSdinger and Poisson equations self-consistently. The Al mole fraction of the AlyGa1-yN barrier changes from 0.30 to 0.46, meanwhile the w;dth of the well changes from 2.9 nm to 2.2 am, for maximal intersubband absorption in the window of the air （3μm 〈 A 〈 5μm）. The absorption coefficient of the intersubband transition between the ground state and the first excited state decreases with the increase of the wavelength. The results are finally used to discuss the prospects of GaN-based bulk material and quantum wells for a solar-blind and middle infrared two-colour photodetector.展开更多
In contrast with Au/Ni/Al0.25Ga0.75N/GaN Schottky contacts, this paper systematically investigates the effect of thermal annealing of Au/Pt/Alo.25Ga0.75N/GaN structures on electrical properties of the two-dimensional ...In contrast with Au/Ni/Al0.25Ga0.75N/GaN Schottky contacts, this paper systematically investigates the effect of thermal annealing of Au/Pt/Alo.25Ga0.75N/GaN structures on electrical properties of the two-dimensional electron gas in Alo.25Ga0.75N/CaN heterostructures by means of temperature-dependent Hall and temperature-dependent current-voltage measurements. The two-dimensional electron gas density of the samples with Pt cap layer increases after annealing in N2 ambience at 600℃ while the annealing treatment has little effect on the two-dimensional electron gas mobility in comparison with the samples with Ni cap layer. The experimental results indicate that the Au/Pt/Al0.25Ga0.75N/GaN Schottky contacts reduce the reverse leakage current density at high annealing temperatures of 400-600 ℃. As a conclusion, the better thermal stability of the Au/Pt/Alo.25Gao.75N/GaN Schottky contacts than the Au/Ni/Al0.25Ga0.75N/GaN Schottky contacts at high temperatures can be attributed to the inertness of the interface between Pt and AlxGa1-xN.展开更多
We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confir...We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confirmed by reflection high-energy electron diffraction, x-ray diffraction and Raman scattering measurements. The Hall effect measurement shows that the electron mobility of the as-grown a-plane InN is about 406 cm^2/V·s with a residual electron concentration of 5.7 × 10^18 cm^-3. THz emission from the a-plane InN film is also studied, where it is found that the emission amplitude is inversely proportional to the conductivity.展开更多
Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin ...Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain walls.The operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized.These devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing functionalities.For current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic operations.Besides,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading ability.By cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be veri-fied.This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes.展开更多
High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500^o C. The increment of electron concentration f...High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500^o C. The increment of electron concentration from room temperature to 500^o C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements （XRD）. The buildup levels in persistent photoconductivity （PPC） are also shown to be directly proportionM to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.展开更多
Recently GaN-based high electron mobility transistors （HEMTs） have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of th...Recently GaN-based high electron mobility transistors （HEMTs） have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current-voltage （I-V） measurements. A non-linear fitting method was used to extract the contact parameters from the I-V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450 ℃ in N2 ambience.展开更多
With the epidemic of the coronavirus disease(COVID-19) infection, AlGaN-based ultraviolet-C light emitting diodes(UVC-LEDs) have attracted widespread attention for their sterilization application. However, the sterili...With the epidemic of the coronavirus disease(COVID-19) infection, AlGaN-based ultraviolet-C light emitting diodes(UVC-LEDs) have attracted widespread attention for their sterilization application. However, the sterilization characters of high power integrated light sources(ILSs) haven’t been widely investigated before utilizing in public sanitary security. In this work,by integrating up to 195 UVC-LED chips, high power UVC-LED ILSs with a light output power(LOP) of 1.88 W were demonstrated. The UVC-LED ILSs were verified to have efficient and rapid sterilization capability, which have achieved more than99.9% inactivation rate of several common pathogenic microorganisms within 1 s. In addition, the corresponding air sterilization module based on them was also demonstrated to kill more than 97% of Staphylococcus albus in the air of 20 m3 confined room within 30 min. This work demonstrates excellent sterilization ability of UVC-LED ILSs with high LOP, revealing great potential of UVC-LEDs in sterilization applications in the future.展开更多
We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy.It is found that an atomically flat surface can be obtained under Al-rich conditions at growth temperature of 780°C.However,th...We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy.It is found that an atomically flat surface can be obtained under Al-rich conditions at growth temperature of 780°C.However,the growth window to obtain an Al−droplet-free surface is too narrow to be well-controlled.However,the growth window can be greatly broadened by increasing the growth temperature up to 950°C,where an Al-droplet-free surface with a step-flow feature is obtained due to the enhanced re-evaporization rate and migration ability of Al adatoms.The samples grown at the higher temperature also show a higher crystalline quality than those grown at lower temperatures.展开更多
The influence of the width of a lattice-matched A10.82In0.18N/GaN single quantum well （SQW） on the absorption coefficients and wavelength of the intersubband transition （ISBT） has been investigated by solving the ...The influence of the width of a lattice-matched A10.82In0.18N/GaN single quantum well （SQW） on the absorption coefficients and wavelength of the intersubband transition （ISBT） has been investigated by solving the Schr5dinger and Poisson equations self-consistently. The wavelength of 1-2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 ~m to 3.59 ~.m. The absorption coefficients of 1-2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1-3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 p^m to near 2.11 p.m. The absorption coefficients of 1-3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the A10.s2In0.1sN/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.展开更多
GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaM...GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on Vca related defects are observed from photoluminescenee measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different （n-type GaN and p-type GaN） templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.展开更多
This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the tem...This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25 350℃. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I-V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.展开更多
This paper reports that cathodoluminescence （CL） measurements have been done to study the alloy fluctuation of the Al0.3Ga0.7N layer in Al0.3Ga0.7N/GaN heterostructures. The CL images and linescanning results demons...This paper reports that cathodoluminescence （CL） measurements have been done to study the alloy fluctuation of the Al0.3Ga0.7N layer in Al0.3Ga0.7N/GaN heterostructures. The CL images and linescanning results demonstrate the existence of compositional fluctuation of Al in the Al0.3Ca0.7N barrier. A model using a δ-shape perturbation Hamilton function has been proposed to simulate the scattering probability of the two dimensional electron gases （2DEG） induced by Al composition fluctuation. Two factors, including conduction band fluctuation and polarization electric field variation, induced by the Al composition fluctuation have been taken into account. The scattering relaxation time induced by both factors has been estimated to be 0.31 ns and 0.0078 ns, respectively, indicating that the variation of the piezoelectric field is dominant in the scattering of the 2DEG induced by Alfluctuation.展开更多
基金This work was supported by the National Key Research and Development Program of China(No.2022YFB3605100)the National Natural Science Foundation of China(Nos.62234001,61927806,61974002,62135013,and 62075081)+1 种基金the Key-Area Research and Development Program of Guangdong Province(No.2020B010172001)the Major Scientific and Technological Innovation Project(MSTIP)of Shandong Province(No.2019JZZY010209).
文摘The development of semiconductors is always accompanied by the progress in controllable doping techniques.Taking AlGaN-based ultraviolet(UV)emitters as an example,despite a peak wall-plug efficiency of 15.3%at the wavelength of 275 nm,there is still a huge gap in comparison with GaN-based visible light-emitting diodes(LEDs),mainly attributed to the inefficient doping of AlGaN with increase of the Al composition.First,p-doping of Al-rich AlGaN is a long-standing challenge and the low hole concentration seriously restricts the carrier injection efficiency.Although p-GaN cladding layers are widely adopted as a compromise,the high injection barrier of holes as well as the inevitable loss of light extraction cannot be neglected.While in terms of n-doping the main issue is the degradation of the electrical property when the Al composition exceeds 80%,resulting in a low electrical efficiency in sub-250 nm UV-LEDs.This review summarizes the recent advances and outlines the major challenges in the efficient doping of Al-rich AlGaN,meanwhile the corresponding approaches pursued to overcome the doping issues are discussed in detail.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.60906041,60736033,60890193,and 10774001)
文摘The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures is higher than that in Alo.25Gao.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Gao.75N/CaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the Iny Can-yN/GaN heterointerface induced by the compressive strain in the InyCal-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.
基金Supported by the Research Fund for the Doctoral Programme of Higher Education in China under Grant Nos 20070286086 and 20060001018, the National Natural Science Foundation of China under Grant Nos 60628402, 10774001 and 60736033, the National Basic Research Programme of China under Grant Nos 2006CB604908 and 2006CB921607, and Beijing Natural Science Foundation under Grant No 4062017.
文摘Influence of width of left well in AlxGa1-xN/GaN double quantum wells （DQWs） on absorption eoefficients and wavelengths of the intersubband transitions （ISBTs） is investigated by solving the Sehroedinger and Poisson equations self-consistently. When the width of left well is 1.79 nm, three-energy-level DQWs are realized. The ISBT between the first odd and second odd order subbands （the lodd-2odd ISBT） has a comparable absorption eoefficient with the lodd-2even ISBT. Their wavelengths are located at 1.3 and 1.55 μm, respectively. When the width of left well is 1.48nm, a four-energy-level DQWs is realized. The calculated results have a possible application to ultrafast two-eolour optoeleetronie devices operating within the optical communication wavelength range.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.60906041,10774001,60736033,and 60890193)the National Basic Research Program of China (Grant Nos.2006CB604908 and 2006CB921607)
文摘By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1-xN/GaN heterointerface and their elimination by subsequent annealing in AlxGa1-xN/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75× 10^12 cm^-2.eV^-1. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N2 ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.
文摘Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al0.45Ga0.55N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky,the samples were thermal annealed in the N2 gas at 400 ℃.The reverse leakage current density of Al0.45Ga0.55N Schottky diode was reduced by 2 orders of magnitude at-10 V.The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing.Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies.The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.
基金Project supported by the Foundation of State Key Laboratory of China(Grant Nos.SKLIPR1903Z,1803)the National Natural Science Foundation of China(Grant Nos.U2167208 and 11875223).
文摘Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.
基金supported by the National Natural Science Foundation of China (Grant Nos 60806042,10774001,60736033,60890193 and 60628402)National Basic Research Program of China (Grant Nos 2006CB604908 and 2006CB921607)+1 种基金the Research Fund for the Doctoral Program of Higher Education in China (Grant Nos 200800011021 and 20060001018)Beijing Natural Science Foundation (Grant No 4062017)
文摘The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical A1N/GaN coupled double quantum wells （CDQWs） has been investigated by solving SchrSdinger and Poisson equations self-consistently. It is found that the absorption coefficient of the intersubband transition （ISBT） between the ground state and the third excited state （lodd - 2even） can be equal to zero when the electric fields are applied in asymmetrical A1N/GaN CDQWs, which is related to applied electric fields induced symmetry recovery of these states. Meanwhile, the energy distances between 1odd - 2even and 1even - 2even subbands have different relationships from each other with the increase of applied electric fields due to the different polarization-induced potential drops between the left and the right wells. The results indicate that an electrical-optical modulator operated within the opto-communication wavelength range can be realized in spite of the strong polarization-induced electric fields in asymmetrical A1N/GaN CDQWs.
文摘Thin tungsten nitride （WNx） films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WNx contact was investigated under various annealing conditions by current-voltage （I-V） measurements. The results show that the gate leakage current was reduced to 10-6 A/cm2 when the N2 flow is 400 mL/min. The results also show that the WNx contact improved the thermal stability of Schottky contacts, Finally, the current transport mechanism in WNx/AlGaN/GaN Schottky diodes has been investigated by means of I-V characterisation technique at various temperatures between 300 K and 523 K. ATE model with a Gaussian distribution of Schottky barrier heights （SBHs） is thought to be responsible for the electrical behaviour at temperatures lower than 523 K.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 60806042,10774001,60736033,60890193 and60628402)National Basic Research Program of China (Grant Nos 2006CB604908 and 2006CB921607)the Research Fundfor the Doctoral Program of Higher Education of China (Grant Nos 200800011021 and 20060001018)
文摘This paper calculates the wavelengths of the interband transitions as a function of the Al mole fraction of AlxGa1-xN bulk materml. It is finds that when the Al mole fraction is between 0.456 and 0.639, the wavelengths correspond to the solar-blind （250 nm to 280 nm）. The influence of the structure parameters of AlyGa1-yN/GaN quantum wells on the wavelength and absorption coefficient of intersubband transitions has been investigated by solving the SchrSdinger and Poisson equations self-consistently. The Al mole fraction of the AlyGa1-yN barrier changes from 0.30 to 0.46, meanwhile the w;dth of the well changes from 2.9 nm to 2.2 am, for maximal intersubband absorption in the window of the air （3μm 〈 A 〈 5μm）. The absorption coefficient of the intersubband transition between the ground state and the first excited state decreases with the increase of the wavelength. The results are finally used to discuss the prospects of GaN-based bulk material and quantum wells for a solar-blind and middle infrared two-colour photodetector.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60906041,10774001,60736033,and 60890193)the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607)
文摘In contrast with Au/Ni/Al0.25Ga0.75N/GaN Schottky contacts, this paper systematically investigates the effect of thermal annealing of Au/Pt/Alo.25Ga0.75N/GaN structures on electrical properties of the two-dimensional electron gas in Alo.25Ga0.75N/CaN heterostructures by means of temperature-dependent Hall and temperature-dependent current-voltage measurements. The two-dimensional electron gas density of the samples with Pt cap layer increases after annealing in N2 ambience at 600℃ while the annealing treatment has little effect on the two-dimensional electron gas mobility in comparison with the samples with Ni cap layer. The experimental results indicate that the Au/Pt/Al0.25Ga0.75N/GaN Schottky contacts reduce the reverse leakage current density at high annealing temperatures of 400-600 ℃. As a conclusion, the better thermal stability of the Au/Pt/Alo.25Gao.75N/GaN Schottky contacts than the Au/Ni/Al0.25Ga0.75N/GaN Schottky contacts at high temperatures can be attributed to the inertness of the interface between Pt and AlxGa1-xN.
基金Supported by the National Basic Research Program of China under Grant No 2012CB619300, the National Natural Science Foundation of China under Grant Nos 61225019, 11023003 and 61376060, and the National High-Technology Research and Devel- opment Program of China under Grant No 2011AA050514.
文摘We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confirmed by reflection high-energy electron diffraction, x-ray diffraction and Raman scattering measurements. The Hall effect measurement shows that the electron mobility of the as-grown a-plane InN is about 406 cm^2/V·s with a residual electron concentration of 5.7 × 10^18 cm^-3. THz emission from the a-plane InN film is also studied, where it is found that the emission amplitude is inversely proportional to the conductivity.
基金sponsored by the National Key Research and Development Program of China(Nos.2017YFA0206202 and 2022YFA1203904)the National Natural Science Foundation of China(No.52271160).
文摘Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain walls.The operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized.These devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing functionalities.For current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic operations.Besides,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading ability.By cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be veri-fied.This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60325413 and 60628402, the National Basic Research Programme of China under Grant Nos 2006CB604908 and 2006CB921607, the Cultivation Fund of the Key Scientific and Technical Innovation Project of the Ministry of Education of China （No 705002）, the Research Fund for the Doctoral Programme of Higher Education in China （20060001018）, and the Beijing Natural Science Foundation （No 4062017）.
文摘High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500^o C. The increment of electron concentration from room temperature to 500^o C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements （XRD）. The buildup levels in persistent photoconductivity （PPC） are also shown to be directly proportionM to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.
文摘Recently GaN-based high electron mobility transistors （HEMTs） have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current-voltage （I-V） measurements. A non-linear fitting method was used to extract the contact parameters from the I-V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450 ℃ in N2 ambience.
基金supported by the Guangdong Basic and Application Basic Research Foundation of Guangdong Province (Nos. 2021A1515111149, 2021B1515120022, 2020B 010174003)。
文摘With the epidemic of the coronavirus disease(COVID-19) infection, AlGaN-based ultraviolet-C light emitting diodes(UVC-LEDs) have attracted widespread attention for their sterilization application. However, the sterilization characters of high power integrated light sources(ILSs) haven’t been widely investigated before utilizing in public sanitary security. In this work,by integrating up to 195 UVC-LED chips, high power UVC-LED ILSs with a light output power(LOP) of 1.88 W were demonstrated. The UVC-LED ILSs were verified to have efficient and rapid sterilization capability, which have achieved more than99.9% inactivation rate of several common pathogenic microorganisms within 1 s. In addition, the corresponding air sterilization module based on them was also demonstrated to kill more than 97% of Staphylococcus albus in the air of 20 m3 confined room within 30 min. This work demonstrates excellent sterilization ability of UVC-LED ILSs with high LOP, revealing great potential of UVC-LEDs in sterilization applications in the future.
基金by the National Natural Science Foundation of China under Grant Nos 11023003,60890193 and 60990313the Specialized Research Fund for the Doctoral Program of Higher Education in China.
文摘We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy.It is found that an atomically flat surface can be obtained under Al-rich conditions at growth temperature of 780°C.However,the growth window to obtain an Al−droplet-free surface is too narrow to be well-controlled.However,the growth window can be greatly broadened by increasing the growth temperature up to 950°C,where an Al-droplet-free surface with a step-flow feature is obtained due to the enhanced re-evaporization rate and migration ability of Al adatoms.The samples grown at the higher temperature also show a higher crystalline quality than those grown at lower temperatures.
基金Project supported by the National High Technology Research and Development Program of China (Grant No.2007AA03Z403)the National Natural Science Foundation of China (Grant Nos.61076013 and 60776042)the National Basic Research Program of China (Grant No.2006CB921607)
文摘The influence of the width of a lattice-matched A10.82In0.18N/GaN single quantum well （SQW） on the absorption coefficients and wavelength of the intersubband transition （ISBT） has been investigated by solving the Schr5dinger and Poisson equations self-consistently. The wavelength of 1-2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 ~m to 3.59 ~.m. The absorption coefficients of 1-2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1-3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 p^m to near 2.11 p.m. The absorption coefficients of 1-3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the A10.s2In0.1sN/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.
基金Supported by the National Basic Research Program of China under Grants Nos 2013CB328705 and 2011CB013101, and the National Natural Science Foundation of China under Grants Nos 61306110, 61327801, 61376012, 61204008, and 11204209.
文摘GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on Vca related defects are observed from photoluminescenee measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different （n-type GaN and p-type GaN） templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.
文摘This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25 350℃. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I-V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.
基金supported by the National Natural Science Foundation of China(Grant Nos 10774001,60736033 and 60628402)National Basic Research Program of China(Grant Nos 2006CB604908 and 2006CB921607)
文摘This paper reports that cathodoluminescence （CL） measurements have been done to study the alloy fluctuation of the Al0.3Ga0.7N layer in Al0.3Ga0.7N/GaN heterostructures. The CL images and linescanning results demonstrate the existence of compositional fluctuation of Al in the Al0.3Ca0.7N barrier. A model using a δ-shape perturbation Hamilton function has been proposed to simulate the scattering probability of the two dimensional electron gases （2DEG） induced by Al composition fluctuation. Two factors, including conduction band fluctuation and polarization electric field variation, induced by the Al composition fluctuation have been taken into account. The scattering relaxation time induced by both factors has been estimated to be 0.31 ns and 0.0078 ns, respectively, indicating that the variation of the piezoelectric field is dominant in the scattering of the 2DEG induced by Alfluctuation.
