Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully opti...Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ < 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.展开更多
Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70°C, accompanied by a resistance dr...Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70°C, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction (XRD) and atomic force microscope (AFM), respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy (XPS) results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, E opt2p-3d = 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.展开更多
Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals ...Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.展开更多
Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a trans...Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.展开更多
Cd3As2, as a three-dimensional(3D) topological Dirac semimetal, has attracted wide attention due to its unique physical properties originating from the 3D massless Dirac fermions. While many efforts have been devoted ...Cd3As2, as a three-dimensional(3D) topological Dirac semimetal, has attracted wide attention due to its unique physical properties originating from the 3D massless Dirac fermions. While many efforts have been devoted to the exploration of novel physical phenomena such as chiral anomaly and phase transitions by using bulk crystals, the development of high-quality and large-scale thin films becomes necessary for practical electronic and optical applications. Here, we report our recent progress in developing single-crystalline thin films with improved quality and their optical devices including Cd3As2-based heterojunctions and ultrafast optical switches. We find that a post-annealing process can significantly enhance the crystallinity of Cd3As2 in both intrinsic and Zn-doped thin films. With excellent characteristics of high mobility and linear band dispersion, Cd3As2 exhibits a good optical response in the visible-to-mid-infrared range due to an advantageous optical absorption, which is reminiscent of 3D graphene. It also behaves as an excellent saturable absorber in the mid-infrared regime. Through the delicate doping process in this material system, it may further open up the long-sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.展开更多
Bismuth-based cubic pyrochlore materials have attractive dielectric properties,especially dielectric tunability.The Bi_(1.5)MgNb_(1.5)O_(7) ceramic samples were prepared by solid state reaction.The XRD results and SEM...Bismuth-based cubic pyrochlore materials have attractive dielectric properties,especially dielectric tunability.The Bi_(1.5)MgNb_(1.5)O_(7) ceramic samples were prepared by solid state reaction.The XRD results and SEM pictures prove the raw material are well mixed and co-fired and the BMN cubic pyrochlore is well crystallized,no second phase was found in the result.BMN thin film were fabricated by depositing BMN ceramic nanoparticles on the sapphire.The BMN thin film has a high dielectric tunability of 43%at a bias voltage of 1.5 MV/cm,with loss tangent lower than 0.009.A Raman study of BMN cubic pyrochlore reveals O′-A-O′and O-A-O bending modes contribute to 80%of dielectric permittivity,obstructing these modes such as applying external electric field can have apparent influence on dielectric constant.Berry Phase calculation results shows that A2O′tetrahedrons are more easy to distort under an external field.The A-site Mg have the highest displacement(0.765028 A),followed by A-site Bi cations(0.346317˚A).Compared to zero-bias thin film,˚the biased one with A-O and A-O′bonds being stretched and external coulomb force applied on cations and anions,the dielectric constant under bias field dramatically decreased.展开更多
Ti4+ substitution for Fe3+ in Ni0.5Zn0.5Fe2O4(NZF) ferrite thin films were realized by sol-gel method and annealing at 600 ℃ for 30 min in the air. Crystal structure and lattice constant determination was performed b...Ti4+ substitution for Fe3+ in Ni0.5Zn0.5Fe2O4(NZF) ferrite thin films were realized by sol-gel method and annealing at 600 ℃ for 30 min in the air. Crystal structure and lattice constant determination was performed by X-ray diffractometer(XRD). Surface microstructure was observed by scanning electron microscope(SEM) and atomic force microscope(AFM),and the magnetic properties were measured by vibrating sample magnetometer(VSM). XRD analyses of the samples show that Ni0.5+xZn0.5TixFe2-2xO4(NZTF) films with x varying from 0 to 0.15 in steps of 0.05 are composed of single phase with spinel structure. And the lattice parameter,particle size and the diffraction intensity of the films increase with substitution of Ti as the result of the larger radius ions entering the lattice. SEM and AFM show homogeneous grain size of each sample,but there is a few differences in grain size with different Ti-substitution contents. As the nonmagnetic Ti4+ substitutes Fe3+,both the saturation magnetization and coercivity decrease.展开更多
With a large number of researches being conducted on two?dimen?sional(2D) materials, their unique properties in optics, electrics, mechanics, and magnetics have attracted increasing attention. Accordingly, the idea of...With a large number of researches being conducted on two?dimen?sional(2D) materials, their unique properties in optics, electrics, mechanics, and magnetics have attracted increasing attention. Accordingly, the idea of combining distinct functional 2D materials into heterostructures naturally emerged that pro?vides unprecedented platforms for exploring new physics that are not accessible in a single 2D material or 3D heterostructures. Along with the rapid development of controllable, scalable, and programmed synthesis techniques of high?quality 2D heterostructures, various heterostructure devices with extraordinary performance have been designed and fabricated, including tunneling transistors, photodetectors, and spintronic devices. In this review, we present a summary of the latest progresses in fabrications, properties, and applications of di erent types of 2D heterostruc?tures, followed by the discussions on present challenges and perspectives of further investigations.展开更多
A new analytical model of high voltage silicon on insulator(SOI) thin film devices is proposed,and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisso...A new analytical model of high voltage silicon on insulator(SOI) thin film devices is proposed,and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate,with a threshold energy taken into account for electron multiplying.Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness,the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films,and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm.From the proposed formula of silicon critical electric field,the expressions of dielectric layer electric field and vertical breakdown voltage(VB,V) are obtained.Based on the model,an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field,and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5 μm,respectively.In addition,a relation between dielectric layer thickness and silicon film thickness is obtained,indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed.2D simulated results and some experimental results are in good agreement with analytical results.展开更多
A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),S...A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.展开更多
Two-dimensional(2D) alternating cation(ACI) perovskite surface defects,especially dominant iodine vacancies(V_Ⅰ) and undercoordinated Pb^(2+),limit the performance of perovskite solar cells(PVSCs).To address the issu...Two-dimensional(2D) alternating cation(ACI) perovskite surface defects,especially dominant iodine vacancies(V_Ⅰ) and undercoordinated Pb^(2+),limit the performance of perovskite solar cells(PVSCs).To address the issue,1-butyl-3-methylimidazolium trifluoro-methane-sulfonate(BMIMOTF) and its iodide counterpart(BMIMI) are utilized to modify the perovskite surface respectively.We find that BMIMI can change the perovskite surface,whereas BMIMOTF shows a nondestructive and more effective defect passivation,giving significantly reduced defect density and suppressed charge-carrier nonradiative recombination.This mainly attributes to the marked passivation efficacy of OTF-anion on V_Ⅰ and undercoordinated Pb^(2+),rather than BMIMI^(+) cation.Benefiting from the rational surface-modification of BMMIMOTF,the films exhibit an optimized energy level alignment,enhanced hydrophobicity and suppressed ion migration.Consequently,the BMIMOTF-modified devices achieve an impressive efficiency of 21.38% with a record open-circuit voltage of 1.195 V,which is among the best efficiencies reported for 2D PVSCs,and display greatly enhanced humidity and thermal stability.展开更多
Aqueous zinc-air battery(ZAB)has attractive features as the potential energy storage system such as high safety,low cost and good environmental compatibility.However,the issue of dendrite growth on zinc metal anodes h...Aqueous zinc-air battery(ZAB)has attractive features as the potential energy storage system such as high safety,low cost and good environmental compatibility.However,the issue of dendrite growth on zinc metal anodes has seriously hindered the development of ZAB.Herein,the N-doped carbon cloth(NC)prepared via magnetron sputtering is explored as the substrate to induce the uniform nucleation of zinc metal and suppress dendrite growth.Results show that the introduction of heteroatoms accelerates the migration and deposition kinetics of Zn^(2+)by boosting the desolvation process of Zn^(2+),eventually reducing the nucleation overpotential.Besides,theoretical calculation results confirm the zincophilicity of N-containing functional group(such as pyridine N and pyrrole N),which can guide the nucleation and growth of zinc uniformly on the electrode surface by both promoting the redistribution of Zn^(2+) in the vicinity of the surface and enhancing its interaction with zinc atoms.As a result,the half-cell assembled with magnetron sputtered carbon cloth achieves a high zinc stripping/plating coulombic efficiency of 98.8%and long-term stability of over 500 cycles at 0.2 mA cm^(-2).And the Coulombic efficiency reached about 99.5%at the 10th cycle and maintained for more than 210 cycles at a high current density of 5.0 mA cm^(-2).The assembled symmetrical battery can deliver 220 plating/stripping cycles with ultra-low voltage hysteresis of only 11 mV.In addition,the assembled zinc-air full battery with NC-Zn anode delivers a high special capacity of about 429 mAh g_(Zn)^(-1) and a long life of over 430 cycles.The effectiveness of surface functionalization in promoting the transfer and deposition kinetics of Zn^(2+) presented in this work shows enlightening significance in the development of metal anodes in aqueous electrolytes.展开更多
Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and ...Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.展开更多
Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) ...Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator(SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field(ENDIF),from which the reduced surface field(RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection(HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET(nLDMOS) with MSFP is realized.The experimental breakdown voltage(BV) and specific on-resistance(R on,sp) of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.展开更多
With the help of the first principle calculation,the solid-state reaction experiment was conducted to investigate the alteration in the sintering and the microwave dielectric properties of Mg_(3)B_(2)O_(6)ceramic with...With the help of the first principle calculation,the solid-state reaction experiment was conducted to investigate the alteration in the sintering and the microwave dielectric properties of Mg_(3)B_(2)O_(6)ceramic with many Zn^(2+)substitutions.These properties were characterized using the scanning electron microscopy,network analyzer,X-ray diffraction,Raman spectroscopy,energy-dispersive spectroscopy,and thermomechanical and differential-thermal analyses.The coexistence of Mg_(3)B_(2)O_(6),Mg_(2)B_(2)O_(5)and ZnO ceramics could be observed with increasing Zn^(2+)addition,and the lattice distortion occurred in the Mg_(2)B_(2)O_(5)and Mg_(3)B_(2)O_(6)ceramics due to the substitution of Mg^(2+)with Zn^(2+).The electron density and the bond property of the MgO_(6)octahedron changed,and a quantitative method was used to discuss the variation in sintering,substitution and phase formation properties.The densification window was decreased to 1100℃,and the dielectric properties improved with the formation of a three-phase borate solid solution(dielectric constant=6.73,quality factor=112,000 GHz at 16 GHz(Q=7000),temperature coefficient of resonant frequency=-61.2 ppm℃^(-1),and relative density=97.0%).展开更多
In order to realize industrial production of hydrogen through water splitting,it is essential to develop a cost-efficient and scalable approach to synthesize nonprecious electrocatalysts with sufficiently high activit...In order to realize industrial production of hydrogen through water splitting,it is essential to develop a cost-efficient and scalable approach to synthesize nonprecious electrocatalysts with sufficiently high activity and stability to replace commercial noble-metal-based electrocatalysts.Herein we synthesize cobalt phosphide nanoparticles dispersed within nitrogen-doped carbon nanotube network(CP@NCNT) via scalable spray drying and thermal treatments.As a multifunctional electrocatalyst,the CP@NCNT hybrid delivers outstanding activity for HER(in both acidic and alkaline electrolytes),OER and overall water splitting.Remarkably,it shows an ultra-low overpotental of 94 mV to obtain 10 mA cm-2 in HER.It also demonstrates outstanding activity in overall water splitting,requiring only 1.619 V to deliver 10 mA cm-2with more than 72 h’ long-term stability.The combination of notable performance,multi-functionality and highly scalable spray-drying synthesis method enables this material as a novel and cost-efficient transition metal-based electrocatalysts for overall water splitting.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11028409 and 60976061)the Fundamental Research Funds for the Central Universities of China (Grant No. ZYGX2009Z0001)
文摘Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ < 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.
基金Project partly supported by the National Natural Science Foundation of China (Grant No. 60736005)
文摘Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70°C, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction (XRD) and atomic force microscope (AFM), respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy (XPS) results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, E opt2p-3d = 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.
基金Project(20123227120021)supported by the Specialized Research Fund for the Doctoral Program of Higher Education of ChinaProject(BK2012156)supported by the Natural Science Foundation of Jiangsu Province,China+3 种基金Project(KFJJ201105)supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices,ChinaProject(CJ20125001)supported by the Application Program for Basic Research of Changzhou,ChinaProject(13KJB430006)supported by the Universities Natural Science Research project of Jiangsu Province,ChinaProject supported by the Industrial Center of Jiangsu University Undergraduate Practice-Innovation Training Program,China
文摘Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.
基金Supported by Program for New Century Excellent Talents in University （NCET-09-0265）, Sichuan Provincial Science Foundation for Youths （No 2010JQ0002）, State Key Laboratory for Mechanical Behavior of Materials, Xi＇an Jiaotong University （No 201011005）, and Foundation Franco Chinoise pour la Science et ses Applications （FFCSA）, respectively.
文摘铟听氧化物(ITO ) 层被在房间温度劈啪作响的 rf 磁控管在 polymethylmethacrylate 和聚乙烯 terephthalate 上准备。他们的 3D-AFM 图象和可见发射度系列对比地被描绘并且学习。他们的最高的 ITO 层上的聚合物底层的有趣的词法效果被观察。从光系列推出的主导的直接、间接的转变类型令人惊讶地在不同聚合物上在 ITO 电影被发现。而且，质的乐队结构被考虑，并且关于光乐队的关联的一些理论讨论组织接口 / 表面形态学和搬运人密度也被介绍。[从作者抽象]
基金Project supported by the National Natural Science Foundation of China(Grant No.61704019)
文摘Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0303302 and 2018YFA0305601)the National Natural Science Foundation of China(Grant Nos.61322407,11474058,61674040,and 11874116)
文摘Cd3As2, as a three-dimensional(3D) topological Dirac semimetal, has attracted wide attention due to its unique physical properties originating from the 3D massless Dirac fermions. While many efforts have been devoted to the exploration of novel physical phenomena such as chiral anomaly and phase transitions by using bulk crystals, the development of high-quality and large-scale thin films becomes necessary for practical electronic and optical applications. Here, we report our recent progress in developing single-crystalline thin films with improved quality and their optical devices including Cd3As2-based heterojunctions and ultrafast optical switches. We find that a post-annealing process can significantly enhance the crystallinity of Cd3As2 in both intrinsic and Zn-doped thin films. With excellent characteristics of high mobility and linear band dispersion, Cd3As2 exhibits a good optical response in the visible-to-mid-infrared range due to an advantageous optical absorption, which is reminiscent of 3D graphene. It also behaves as an excellent saturable absorber in the mid-infrared regime. Through the delicate doping process in this material system, it may further open up the long-sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.
基金supported by the National Natural Science Foundation of China(Grant No.51602037)the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices(Grant No.KFJJ201510).
文摘Bismuth-based cubic pyrochlore materials have attractive dielectric properties,especially dielectric tunability.The Bi_(1.5)MgNb_(1.5)O_(7) ceramic samples were prepared by solid state reaction.The XRD results and SEM pictures prove the raw material are well mixed and co-fired and the BMN cubic pyrochlore is well crystallized,no second phase was found in the result.BMN thin film were fabricated by depositing BMN ceramic nanoparticles on the sapphire.The BMN thin film has a high dielectric tunability of 43%at a bias voltage of 1.5 MV/cm,with loss tangent lower than 0.009.A Raman study of BMN cubic pyrochlore reveals O′-A-O′and O-A-O bending modes contribute to 80%of dielectric permittivity,obstructing these modes such as applying external electric field can have apparent influence on dielectric constant.Berry Phase calculation results shows that A2O′tetrahedrons are more easy to distort under an external field.The A-site Mg have the highest displacement(0.765028 A),followed by A-site Bi cations(0.346317˚A).Compared to zero-bias thin film,˚the biased one with A-O and A-O′bonds being stretched and external coulomb force applied on cations and anions,the dielectric constant under bias field dramatically decreased.
文摘Ti4+ substitution for Fe3+ in Ni0.5Zn0.5Fe2O4(NZF) ferrite thin films were realized by sol-gel method and annealing at 600 ℃ for 30 min in the air. Crystal structure and lattice constant determination was performed by X-ray diffractometer(XRD). Surface microstructure was observed by scanning electron microscope(SEM) and atomic force microscope(AFM),and the magnetic properties were measured by vibrating sample magnetometer(VSM). XRD analyses of the samples show that Ni0.5+xZn0.5TixFe2-2xO4(NZTF) films with x varying from 0 to 0.15 in steps of 0.05 are composed of single phase with spinel structure. And the lattice parameter,particle size and the diffraction intensity of the films increase with substitution of Ti as the result of the larger radius ions entering the lattice. SEM and AFM show homogeneous grain size of each sample,but there is a few differences in grain size with different Ti-substitution contents. As the nonmagnetic Ti4+ substitutes Fe3+,both the saturation magnetization and coercivity decrease.
基金supported by NSF of China (Grant No. 61775241)partly by the Innovation-driven Project (Grant No. 2017CX019)the funding support from the Australian Research Council (ARC Discovery Projects, DP180102976)
文摘With a large number of researches being conducted on two?dimen?sional(2D) materials, their unique properties in optics, electrics, mechanics, and magnetics have attracted increasing attention. Accordingly, the idea of combining distinct functional 2D materials into heterostructures naturally emerged that pro?vides unprecedented platforms for exploring new physics that are not accessible in a single 2D material or 3D heterostructures. Along with the rapid development of controllable, scalable, and programmed synthesis techniques of high?quality 2D heterostructures, various heterostructure devices with extraordinary performance have been designed and fabricated, including tunneling transistors, photodetectors, and spintronic devices. In this review, we present a summary of the latest progresses in fabrications, properties, and applications of di erent types of 2D heterostruc?tures, followed by the discussions on present challenges and perspectives of further investigations.
基金Project supported by the National Natural Science Foundation of China (Grant No 60436030)National Laboratory of Analogue Integrated Circuits,China (Grant No 9140C090305060C09)
文摘A new analytical model of high voltage silicon on insulator(SOI) thin film devices is proposed,and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate,with a threshold energy taken into account for electron multiplying.Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness,the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films,and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm.From the proposed formula of silicon critical electric field,the expressions of dielectric layer electric field and vertical breakdown voltage(VB,V) are obtained.Based on the model,an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field,and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5 μm,respectively.In addition,a relation between dielectric layer thickness and silicon film thickness is obtained,indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed.2D simulated results and some experimental results are in good agreement with analytical results.
基金supported in part by the National Natural Science Foundation of China(Grant No.61974015)Key R&D Project of Science and Technology Plan of the Sichuan province(Grant No.2021YFG0139)the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201806)。
文摘A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.
基金financially supported by the National Natural Science Foundation of China (62174021 and 62104028)the Creative Research Groups of the National Natural Science Foundation of Sichuan Province (2023NSFSC1973)+7 种基金the Sichuan Science and Technology Program (MZGC20230008)the Natural Science Foundation of Sichuan Province (2022NSFSC0899)the China Postdoctoral Science Foundation (2021M700689)the Grant SCITLAB (20012) of Intelligent Terminal Key Laboratory of Sichuan ProvinceFundamental Research Funds for the Central Universities (ZYGX2019J054)the Guangdong Basic and Applied Basic Research Foundation (2019A1515110438)sponsored by the University of Kentuckythe Sichuan Province Key Laboratory of Display Science and Technology。
文摘Two-dimensional(2D) alternating cation(ACI) perovskite surface defects,especially dominant iodine vacancies(V_Ⅰ) and undercoordinated Pb^(2+),limit the performance of perovskite solar cells(PVSCs).To address the issue,1-butyl-3-methylimidazolium trifluoro-methane-sulfonate(BMIMOTF) and its iodide counterpart(BMIMI) are utilized to modify the perovskite surface respectively.We find that BMIMI can change the perovskite surface,whereas BMIMOTF shows a nondestructive and more effective defect passivation,giving significantly reduced defect density and suppressed charge-carrier nonradiative recombination.This mainly attributes to the marked passivation efficacy of OTF-anion on V_Ⅰ and undercoordinated Pb^(2+),rather than BMIMI^(+) cation.Benefiting from the rational surface-modification of BMMIMOTF,the films exhibit an optimized energy level alignment,enhanced hydrophobicity and suppressed ion migration.Consequently,the BMIMOTF-modified devices achieve an impressive efficiency of 21.38% with a record open-circuit voltage of 1.195 V,which is among the best efficiencies reported for 2D PVSCs,and display greatly enhanced humidity and thermal stability.
基金supported by the National Natural Science Foundation of China(Grant No.21905033)the Science and Technology Department of Sichuan Province(Grant No.2019YJ0503)State Key Laboratory of Vanadium and Titanium Resources Comprehensive Utilization(2020P4FZG02A).
文摘Aqueous zinc-air battery(ZAB)has attractive features as the potential energy storage system such as high safety,low cost and good environmental compatibility.However,the issue of dendrite growth on zinc metal anodes has seriously hindered the development of ZAB.Herein,the N-doped carbon cloth(NC)prepared via magnetron sputtering is explored as the substrate to induce the uniform nucleation of zinc metal and suppress dendrite growth.Results show that the introduction of heteroatoms accelerates the migration and deposition kinetics of Zn^(2+)by boosting the desolvation process of Zn^(2+),eventually reducing the nucleation overpotential.Besides,theoretical calculation results confirm the zincophilicity of N-containing functional group(such as pyridine N and pyrrole N),which can guide the nucleation and growth of zinc uniformly on the electrode surface by both promoting the redistribution of Zn^(2+) in the vicinity of the surface and enhancing its interaction with zinc atoms.As a result,the half-cell assembled with magnetron sputtered carbon cloth achieves a high zinc stripping/plating coulombic efficiency of 98.8%and long-term stability of over 500 cycles at 0.2 mA cm^(-2).And the Coulombic efficiency reached about 99.5%at the 10th cycle and maintained for more than 210 cycles at a high current density of 5.0 mA cm^(-2).The assembled symmetrical battery can deliver 220 plating/stripping cycles with ultra-low voltage hysteresis of only 11 mV.In addition,the assembled zinc-air full battery with NC-Zn anode delivers a high special capacity of about 429 mAh g_(Zn)^(-1) and a long life of over 430 cycles.The effectiveness of surface functionalization in promoting the transfer and deposition kinetics of Zn^(2+) presented in this work shows enlightening significance in the development of metal anodes in aqueous electrolytes.
基金Project supported by the Key Research and Development Program of Jiangsu Province,China(Grant No.BE2020010)the Natural Science Foundation of Guangdong Province,China(Grant No.2023A1515012652)。
文摘Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.
基金Supported by the National Basic Research Program of China under Grant No 2007CB310407, the National Natural Science Foundation of China under Grant Nos 60721001 and 60771047, and the International S＆T Cooperation Program of China under Grant No 2007DFR10250.
基金Project supported partially by the National Natural Science Foundation of China (Grant Nos. 60906038 and 61076082)
文摘Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator(SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field(ENDIF),from which the reduced surface field(RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection(HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET(nLDMOS) with MSFP is realized.The experimental breakdown voltage(BV) and specific on-resistance(R on,sp) of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.
基金supported by the National Natural Science Foundation of China(Grant Nos.61771104 and 62071106)Jiangxi Innovative Talent Program,and Sichuan Science and Technology Program(Grant No.2021JDTD0026)。
文摘With the help of the first principle calculation,the solid-state reaction experiment was conducted to investigate the alteration in the sintering and the microwave dielectric properties of Mg_(3)B_(2)O_(6)ceramic with many Zn^(2+)substitutions.These properties were characterized using the scanning electron microscopy,network analyzer,X-ray diffraction,Raman spectroscopy,energy-dispersive spectroscopy,and thermomechanical and differential-thermal analyses.The coexistence of Mg_(3)B_(2)O_(6),Mg_(2)B_(2)O_(5)and ZnO ceramics could be observed with increasing Zn^(2+)addition,and the lattice distortion occurred in the Mg_(2)B_(2)O_(5)and Mg_(3)B_(2)O_(6)ceramics due to the substitution of Mg^(2+)with Zn^(2+).The electron density and the bond property of the MgO_(6)octahedron changed,and a quantitative method was used to discuss the variation in sintering,substitution and phase formation properties.The densification window was decreased to 1100℃,and the dielectric properties improved with the formation of a three-phase borate solid solution(dielectric constant=6.73,quality factor=112,000 GHz at 16 GHz(Q=7000),temperature coefficient of resonant frequency=-61.2 ppm℃^(-1),and relative density=97.0%).
基金supported by the University of Electronic Science and Technology of China (Grant No. Y03019023601016208)the National Natural Science Foundation of China (Grant Nos. 21773024, 51372033)National High Technology Research and Development Program of China (Grant No. 2015AA034202)。
文摘In order to realize industrial production of hydrogen through water splitting,it is essential to develop a cost-efficient and scalable approach to synthesize nonprecious electrocatalysts with sufficiently high activity and stability to replace commercial noble-metal-based electrocatalysts.Herein we synthesize cobalt phosphide nanoparticles dispersed within nitrogen-doped carbon nanotube network(CP@NCNT) via scalable spray drying and thermal treatments.As a multifunctional electrocatalyst,the CP@NCNT hybrid delivers outstanding activity for HER(in both acidic and alkaline electrolytes),OER and overall water splitting.Remarkably,it shows an ultra-low overpotental of 94 mV to obtain 10 mA cm-2 in HER.It also demonstrates outstanding activity in overall water splitting,requiring only 1.619 V to deliver 10 mA cm-2with more than 72 h’ long-term stability.The combination of notable performance,multi-functionality and highly scalable spray-drying synthesis method enables this material as a novel and cost-efficient transition metal-based electrocatalysts for overall water splitting.
