After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data...After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data retention ability（189°C for 10 y）. The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb（3 nm）/SiO_2（7 nm）-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb（3 nm）/SiO_2（7 nm） thin film shows a low thermal conductivity of 0.13 W/（m·K）.展开更多
We report lasing properties of distributed feedback quantum cascade lasers （DFB QCLs） including a doublephonon-resonance active region, at wavelength of about 8.4 μm. A broad gain spectrum is generated due to the c...We report lasing properties of distributed feedback quantum cascade lasers （DFB QCLs） including a doublephonon-resonance active region, at wavelength of about 8.4 μm. A broad gain spectrum is generated due to the coupling between the lower laser level in the active region and the levels in the injector, and is demonstrated by the lasing spectrum of the corresponding Fabry-Perot QCLs whose width is 0.5 μm at 1.5 times of the threshold current. As a result, the DFB QCLs employing different grating periods exhibit a wavelength span of 0.18μm at room temperature and total wavelength coverage of 0.28μm at various heat sink temperatures. A high side mode suppression ratio of about 30dB and a low threshold current density of 1.78kA/cm^2 are achieved as the lasers operate at room temperature in pulsed mode.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 11774438the Natural Science Foundation of Jiangsu Province under Grant No BK20151172+2 种基金the Changzhou Science and Technology Bureau under Grant No CJ20160028the Qing Lan Project,the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences
文摘After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data retention ability（189°C for 10 y）. The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb（3 nm）/SiO_2（7 nm）-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb（3 nm）/SiO_2（7 nm） thin film shows a low thermal conductivity of 0.13 W/（m·K）.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60406008, 60676026 and 60136010, the National High Technology Research and Development Programme of China under Grant No 2006AA03Z0406, and the National Basic Research Programme of China under Grant No 2006CB604903.
文摘We report lasing properties of distributed feedback quantum cascade lasers （DFB QCLs） including a doublephonon-resonance active region, at wavelength of about 8.4 μm. A broad gain spectrum is generated due to the coupling between the lower laser level in the active region and the levels in the injector, and is demonstrated by the lasing spectrum of the corresponding Fabry-Perot QCLs whose width is 0.5 μm at 1.5 times of the threshold current. As a result, the DFB QCLs employing different grating periods exhibit a wavelength span of 0.18μm at room temperature and total wavelength coverage of 0.28μm at various heat sink temperatures. A high side mode suppression ratio of about 30dB and a low threshold current density of 1.78kA/cm^2 are achieved as the lasers operate at room temperature in pulsed mode.
