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Combination of a reaction cell and an ultra-high vacuum system for the in situ preparation and characterization of a model catalyst
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作者 Yi-Jing Zang Shu-Cheng Shi +5 位作者 Yong Han Hui Zhang Wei-Jia Wang Peng Liu Mao Ye Zhi Liu 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2023年第5期13-21,共9页
An in-depth understanding of the structure-activity relationship between the surface structure,chemical composition,adsorption and desorption of molecules,and their reaction activity and selectivity is necessary for t... An in-depth understanding of the structure-activity relationship between the surface structure,chemical composition,adsorption and desorption of molecules,and their reaction activity and selectivity is necessary for the rational design of high-performance catalysts.Herein,we present a method for studying catalytic mechanisms using a combination of in situ reaction cells and surface science techniques.The proposed system consists of four parts:preparation chamber,temperatureprogrammed desorption(TPD)chamber,quick load-lock chamber,and in situ reaction cell.The preparation chamber was equipped with setups based on the surface science techniques used for standard sample preparation and characterization,including an Ar+sputter gun,Auger electron spectrometer,and a low-energy electron diffractometer.After a well-defined model catalyst was prepared,the sample was transferred to a TPD chamber to investigate the adsorption and desorption of the probe molecule,or to the reaction cell,to measure the catalytic activity.A thermal desorption experiment for methanol on a clean Cu(111)surface was conducted to demonstrate the functionality of the preparation and TPD chambers.Moreover,the repeatability of the in situ reaction cell experiment was verified by CO_(2) hydrogenation on the Ni(110)surface.At a reaction pressure of 800 Torr at 673 K,turnover frequencies for the methanation reaction and reverse water-gas shift reaction were 0.15 and 7.55 Ni atom^(-1) s^(-1),respectively. 展开更多
关键词 Surface science Model catalysts Ultra-high vacuum Temperature-programmed desorption In situ reaction cell
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Modulating surface oxygen species via facet engineering for efficient conversion of nitrate to ammonia
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作者 Wenye Zhong Zhiheng Gong +4 位作者 Zuyun He Nian Zhang Xiongwu Kang Xianwen Mao Yan Chen 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2023年第3期211-221,I0007,共12页
Electrochemical reduction of nitrate,a common pollutant in aquatic environment,to valuable ammonia(NO3-RR) using renewably-sourced electricity has attracted widespread interests,with past efforts mainly focused on des... Electrochemical reduction of nitrate,a common pollutant in aquatic environment,to valuable ammonia(NO3-RR) using renewably-sourced electricity has attracted widespread interests,with past efforts mainly focused on designing electrocatalysts with high activity and selectivity.The detailed correlation between catalyst properties and NO3-RR kinetics,nevertheless,is still not fully understood.In this work,we modulate the surface oxygen species of Cu_(2)O via facet engineering,and systematically study the impact of these oxygen species on the NO_(3)^(-)RR activity.Combining advanced spectroscopic techniques,densi ty fu n ctional theory calculations and molecular dynamics simulations,we find that while oxygen vacancies on Cu_(2)O(111) surface promote the adsorption of reactants and reaction intermediates,hydroxyl groups effectively inhibit the side reaction of hydrogen evolution and facilitate the hydrogenation process of NO3-RR.These two effects work in concert to render Cu_(2)O(111) facet the highest NO3-RR activity relative to those from other facets.Our study provides critical insights into the synergistic effect of exposed facets and surface oxygen species on heterogeneous catalysis,and offers a generalizable,facet engineeringbased strategy for improving the performance of a variety of electrocatalysts important for renewable energy conversion. 展开更多
关键词 Facet engineering Oxygen vacancy Hydroxyl group Electrochemical nitrate reduction AMMONIA
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Anisotropy of 2H-NbSe_(2)in the superconducting and charge density wave states
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作者 张驰 乔山 +1 位作者 肖宏 胡涛 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第4期593-597,共5页
Anisotropy is an important feature of layered materials,and a large anisotropy is usually related to the two-dimensional charac teristics.We investigated the anisotropy of the layered transition metal dicalcogenide 2H... Anisotropy is an important feature of layered materials,and a large anisotropy is usually related to the two-dimensional charac teristics.We investigated the anisotropy of the layered transition metal dicalcogenide 2H-NbSe_(2)in the superconducting and charge density wave(CDW)states using magnetotransport measurements.In the superconducting state,the normalized H_(c2)^(‖c)/H_(p)is independent of the thickness of 2H-NbSe_(2),while H_(c2)^(‖ab)/H_p increases significantly with decreasing thickness,where H_p is the Pauli limiting magnetic field and H_(c2)^(‖c)anu H_(c2)^(‖ab)are the upper critical fields in the c and ab directions,respectively.It is found that the superconducting anisotropy parameterγH_(c2)=H_(c2)^(‖ab)/H_(c2)^(‖c)increases with reduction in the thickness of 2H-NbSe_(2).In the CDW state,the angular(θ)dependence of magnetoresistance,R(H,θ)scales with H(cos^(2)θ+γ_(CDW)^(-2)sin^(2)θ)^(1/2),which decreases with increasing temperature and disappears at about 40 K.It is found that the CDW anisotropy parameterγ_(CDW)is much larger than the effective mass anisotropy but does not change a lot for ultrathin and bulk samples.Our results suggest the existence of three-dimensional superconductivity and quasi-two dimensional CDWs in bulk 2H-NbSe_(2). 展开更多
关键词 ANISOTROPY SUPERCONDUCTIVITY charge density wave transition metal dicalcogenides
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Heterogeneous integration technology for the thermal management of Ga_(2)O_(3) power devices
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作者 Genquan Han Tiangui You +3 位作者 Yibo Wang Zheng-Dong Luo Xin Ou Yue Hao 《Journal of Semiconductors》 EI CAS CSCD 2023年第6期1-3,共3页
The more severe phonon-phonon scattering in gallium oxide(Ga_(2)O_(3)) crystals leads to lower thermal conductivity compared to most other semiconductor materials. To address this issue and enhance the heat dissipatio... The more severe phonon-phonon scattering in gallium oxide(Ga_(2)O_(3)) crystals leads to lower thermal conductivity compared to most other semiconductor materials. To address this issue and enhance the heat dissipation in Ga_(2)O_(3) devices, one practical solution is to integrate Ga_(2)O_(3) with a highly thermally conductive substrate, such as SiC and Si. Currently,there are three methods employed for the heterogeneous integration of Ga_(2)O_(3) with highly thermally conductive substrates:mechanical exfoliation, hetero-epitaxy growth, and ion-cutting technique. 展开更多
关键词 MATERIALS INTEGRATION THERMAL
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Photon-in/photon-out endstation for studies of energy materials at beamline 02B02 of Shanghai Synchrotron Radiation Facility 被引量:1
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作者 任国玺 张念 +6 位作者 冯雪飞 章辉 于鹏飞 郑顺 周櫈 田宗旺 刘啸嵩 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第1期62-69,共8页
A new photon-in/photon-out endstation at beamline 02B02 of the Shanghai Synchrotron Radiation Facility for studying the electronic structure of energy materials has been constructed and fully opened to users.The endst... A new photon-in/photon-out endstation at beamline 02B02 of the Shanghai Synchrotron Radiation Facility for studying the electronic structure of energy materials has been constructed and fully opened to users.The endstation has the capability to perform soft x-ray absorption spectroscopy in total electron yield and total fluorescence yield modes simultaneously.The photon energy ranges from 40 eV to 2000 eV covering the K-edge of most low Z-elements and the L-edge of 3d transition-metals.The new self-designed channeltron detector allows us to achieve good fluorescence signals at the low photon flux.In addition,we synchronously collect the signals of a standard reference sample and a gold mesh on the upstream to calibrate the photon energy and monitor the beam fluctuation,respectively.In order to cross the pressure gap,in situ gas and liquid cells for soft x-ray absorption spectroscopy are developed to study the samples under realistic working conditions. 展开更多
关键词 soft x-ray absorption energy materials photon-in/photon-out in situ cell
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Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers 被引量:13
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作者 张永刚 郑燕兰 +2 位作者 林春 李爱珍 刘盛 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第8期2262-2265,共4页
关键词 连续波 可调谐性 MBE生长 激光器 量子阱
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Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory 被引量:3
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作者 徐成 刘波 +2 位作者 宋志棠 封松林 陈邦明 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第11期2929-2932,共4页
rfmagnetron 劈啪作响在 Si (100 )/SiO2 底层上扔的做 Sn 的 Ge2Sb2Te5 薄电影被微分扫描热量计, X 光衍射和表抵抗测量调查。3.58 at.% , 6.92 at.% 和 10.04at .% 的结晶化温度分别地,做 Sn 的 Ge2Sb2Te5 薄电影有 5.3, 6.1 和 0... rfmagnetron 劈啪作响在 Si (100 )/SiO2 底层上扔的做 Sn 的 Ge2Sb2Te5 薄电影被微分扫描热量计, X 光衍射和表抵抗测量调查。3.58 at.% , 6.92 at.% 和 10.04at .% 的结晶化温度分别地,做 Sn 的 Ge2Sb2Te5 薄电影有 5.3, 6.1 和 0.9 度 C 的减少它是有益的为 amorphous-to-crystalline 阶段转变减少切换的水流。由于做 Sn,水晶的 Ge2Sb2Te5 薄电影的表电阻关于 2-10 时间增加,它可能是有用的为 theamorphous-to-crystalline 阶段变化减少切换的水流。另外,为处于水晶的状态的做 Sn 的 Ge2Sb2Te5 薄电影的表电阻的明显的减少可分散性被观察了,它能在为阶段变化记忆房间元素数组最小化电阻差别起一个重要作用。 展开更多
关键词 Ge2Sb2Te5 薄膜 杂质 沉淀物 电子喷射 电阻测量
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Pulse Wavelength Scan of Room-Temperature Mid-Infrared Distributed Feedback Quantum Cascade Lasers for N2O Gas Detection 被引量:3
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作者 张永刚 徐刚毅 +4 位作者 李爱珍 李耀耀 顾溢 刘盛 魏林 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第7期1780-1783,共4页
在一个脉搏波长扫描计划下面的悦耳的二极管激光吸收光谱学被使适应自制房间温度中间红外线的分布式的反馈量串联激光;并且 N2O 的鉴定光谱指纹试验性地被表明。由在 800 ns 脉搏持续时间驾驶激光,大约 1.6 厘米调节的一个波浪数字(-... 在一个脉搏波长扫描计划下面的悦耳的二极管激光吸收光谱学被使适应自制房间温度中间红外线的分布式的反馈量串联激光;并且 N2O 的鉴定光谱指纹试验性地被表明。由在 800 ns 脉搏持续时间驾驶激光,大约 1.6 厘米调节的一个波浪数字(-1) 被生产,它使两个成为 1289.04 厘米(-1) 和 1289.86 厘米(毫无疑问是的 N2O 气体的 -1) 吸收指纹分配了。测量相对吸收紧张正与 HITRAN 数据一致。 展开更多
关键词 脉冲波长 反馈 量子叶栅激光器 N2O气体探测
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Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling 被引量:2
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作者 龚岳峰 凌云 +1 位作者 宋志棠 封松林 《Chinese Physics Letters》 SCIE CAS CSCD 2008年第9期3455-3458,共4页
一个三维的有限元素当模特儿因为阶段变化随机存取记忆(PCRAM ) 被建立在重设操作期间模仿热、电的行为。常规结构(CS ) 和在底部电极(肋骨) 的戒指类型接触的重设行为与对方相比。模拟结果显示 RIB 房间为与维持好电阻对比在房间,接... 一个三维的有限元素当模特儿因为阶段变化随机存取记忆(PCRAM ) 被建立在重设操作期间模仿热、电的行为。常规结构(CS ) 和在底部电极(肋骨) 的戒指类型接触的重设行为与对方相比。模拟结果显示 RIB 房间为与维持好电阻对比在房间,接触区域的减小和更低的重设电流融化阶段变化材料有高热效率的优点。重设水流在肋骨结构从 12% ~ 37% 在编程增加期间在 GST 材料从 1.26mA 减少到 1.2mA 和热消费。因此 RIB 结构 PCRAM 房间对有高热效率和更小的重设电流的未来设备合适。[从作者抽象] 展开更多
关键词 换相随机存取存储器 复位电流 环形电流接触器 有限元模拟
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Effect of Mo doping on phase change performance of Sb_(2)Te_(3) 被引量:2
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作者 刘万良 陈莹 +2 位作者 李涛 宋志棠 吴良才 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第8期440-443,共4页
Mo,as a dopant,is doped into SbTe to improve its thermal stability.It is shown in this paper that the Mo-doped Sb_(2)Te_(3)(Mo_(0.26)Sb_(2)Te_(3),MST)material possesses phase change memory(PCM)applications.MST has bet... Mo,as a dopant,is doped into SbTe to improve its thermal stability.It is shown in this paper that the Mo-doped Sb_(2)Te_(3)(Mo_(0.26)Sb_(2)Te_(3),MST)material possesses phase change memory(PCM)applications.MST has better thermal stability than Sb_(2)Te_(3)(ST)and will crystallize only when the annealing temperature is higher than 250℃.With the good thermal stability,MST-based PCM cells have a fast crystallization time of 6 ns.Furthermore,endurance up to 4×10^(5) cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications. 展开更多
关键词 phase-change memory Sb_(2)Te_(3) thin films NANOCOMPOSITES
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Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling 被引量:1
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作者 GONG Yue-Feng SONG Zhi-Tang LING Yun LIU Yan LI Yi-Jin 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第6期250-253,共4页
为阶段变化随机存取记忆的一个三维的有限元素模型被建立模仿电,热并且分阶段执行州的分发在期间(集合) 操作。模型被使用模仿增加结构(HS ) 和在底部电极(肋骨) 的戒指类型接触组织的加热器的 SET 行为。模拟结果显示小底部电极电流... 为阶段变化随机存取记忆的一个三维的有限元素模型被建立模仿电,热并且分阶段执行州的分发在期间(集合) 操作。模型被使用模仿增加结构(HS ) 和在底部电极(肋骨) 的戒指类型接触组织的加热器的 SET 行为。模拟结果显示小底部电极电流接触器(BEC ) 与 80 nm 是的尺寸 Fx = 在 HS 房间,和底部电极电流接触器为热效率和可靠性是有益的为 RIB 房间的一种好选择。另外出现是适当集合脉搏时间是为低电源消费和快操作的 100 ns。[从作者抽象] 展开更多
关键词 随机存取存储器 电压设置 接触器 加热器 低功耗 有限元建模 模拟 环型
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Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material 被引量:1
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作者 任万春 刘波 +4 位作者 宋志棠 向阳辉 王宗涛 张北超 封松林 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第11期335-339,共5页
Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture.Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality... Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture.Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality,purity,and accurate composition control.However,the conventional physical vapor deposition process cannot meet the gapfilling requirement with the critical device dimension scaling down to 90 nm or below.In this study,we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process,especially at the nano-scale critical dimension.The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed.We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling.We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process.We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory. 展开更多
关键词 相变材料 纳米级 蚀刻 存款 填充 间隙 Ge2Sb2Te5 物理气相沉积
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Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation 被引量:1
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作者 张恩霞 钱聪 +8 位作者 张正选 林成鲁 王曦 王英民 王晓荷 赵桂茹 恩云飞 罗宏伟 师谦 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第4期792-797,共6页
关键词 辐照硬度 剂量 硅绝缘体 辐射效应 离子植入
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Formation of multifaceted nano-groove structure on rutile TiO_(2) photoanode for efficient electron-hole separation and water splitting 被引量:1
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作者 Xiaoyi Zhan Yaling Luo +15 位作者 Ziyu Wang Yao Xiang Zheng Peng Yong Han Hui Zhang Ruotian Chen Qin Zhou Hongru Peng Hao Huang Weimin Liu Xin Ou Guijun Ma Fengtao Fan Fan Yang Can Li Zhi Liu 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2022年第2期19-25,共7页
Photoelectrochemical(PEC)water-splitting using solar energy holds great promise for the renewable energy future,and a key challenge in the development of industry viable PEC devices is the unavailability of high-effic... Photoelectrochemical(PEC)water-splitting using solar energy holds great promise for the renewable energy future,and a key challenge in the development of industry viable PEC devices is the unavailability of high-efficient photoanodes.Herein,we designed a TiO_(2) model photocatalyst with nano-groove pattern and different surface orientation using low-energy Ar+irradiation and photoetching of TiO_(2),and significantly improved the intrinsic activity for PEC water oxidation.High-resolution transmission electron microscopy directly manifests that the grooves consist of highly stepped surface with<110>steps and well-crystallized.Transient absorption spectroscopy reveals the groove surface that allows for increased recovery lifetime,which ensures promoted electron-hole separation efficiency.Surface photovoltage directly shows the carrier separation and transportation behaviors,verified by selective photodeposition,demonstrating the groove surface on TiO_(2) contributes to electron-hole separation.This work proposes an efficient and scalable photoanode strategy,which potentially can open new opportunities for achieving efficient PEC water oxidation performance. 展开更多
关键词 TiO_(2)nano-grooves Oxygen vacancies Photoetching Water oxidation
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Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node 被引量:1
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作者 张乐情 卢健 +5 位作者 胥佳灵 刘小年 戴丽华 徐依然 毕大炜 张正选 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第11期119-122,共4页
A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130 nm CMOS bulk Si and silicon-on-insulator(SOI) technologies. The effectiveness of linear energy transfer(LE... A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130 nm CMOS bulk Si and silicon-on-insulator(SOI) technologies. The effectiveness of linear energy transfer(LET) with a tilted ion beam at the 130 nm technology node is obtained. Tests of tilted angles θ=0°,30°and 60°with respect to the normal direction are performed under heav.y-ion Kr with certain power whose LET is about 40 MeVcm^2/mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ, furthermore the effective LET for SOI is more closely in inverse proportion to cos θ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cos 0 very well, which is also specifically explained. 展开更多
关键词 SOI Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Tec
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Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging 被引量:1
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作者 Yuxin Song Shumin Wang +5 位作者 Carl Asplund Rickard Marcks von Würtemberg Hedda Malm Amir Karim Xiang Lu Jun Shao 《Crystal Structure Theory and Applications》 2013年第2期46-56,共11页
InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and tran... InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and transport quality. Novel strain compensation schemes with insertion of InSb layers were proposed and tested to be efficient to tune the overall strain between tensile and compressive without degradation of interface and optical quality. The effect of the proposed methods is modeled by analytic functions.? Band structure calculations were also carried out for the proposed T2SL structures to assist optimizing sample designs. Single pixel photodiodes with a low dark current were demonstrated. 展开更多
关键词 INAS/GASB TYPE-II Superlattce Molecular Beam EPITAXY Strain COMPENSATION
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Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming
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作者 陈一峰 宋志棠 +6 位作者 陈小刚 刘波 徐成 冯高明 王良咏 钟曼 封松林 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第10期186-189,共4页
基于 Ge2Sb2Te5 (GST ) 材料,一台阶段变化记忆(脉冲编码调制) 设备用标准 0.18 公里互补金属氧化物半导体技术被制作。在阶段转变行为的详细实验的连续剧以后,我们发现 RESET 过程强烈依赖于不活跃的区域的状态,活跃区域戏剧性地影... 基于 Ge2Sb2Te5 (GST ) 材料,一台阶段变化记忆(脉冲编码调制) 设备用标准 0.18 公里互补金属氧化物半导体技术被制作。在阶段转变行为的详细实验的连续剧以后,我们发现 RESET 过程强烈依赖于不活跃的区域的状态,活跃区域戏剧性地影响 SET 过程。由使用 5 妈当前电压(我 -- V ) 作为起始的操作扫,我们能在 RESET 过程期间在活跃区域以外减少电压落下,外套从对 2.5 V 正的 3 V 重设电压减少。为 SET 操作,一个非累积的编程方法与交换过程和集合电压的阀值有关强烈被介绍消除随机形成的非结晶的活跃区域的影响,它是。联合二个方法, PCM 设备的耐力表演显著地在 1 x 106 个周期以外被改进了。[从作者抽象] 展开更多
关键词 相变存储器 编程方法 运行情况 存储单元 增强性能 累积 Ge2Sb2Te5 PCM设备
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Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory
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作者 吕士龙 宋志棠 +1 位作者 刘燕 封松林 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第2期295-298,共4页
阶段变化随机存取存储器(PC 内存) 基于有磅的 Si2Sb2Te5 逐渐变细加热电极(磅 --) ,它用一根焦点离子横梁(小谎) 被制作,被调查。与钨电极相比,磅 --facilitates 在阶段变化材料的温度上升,它从 3.6 ~ 2.7 V 引起重设电压的减少... 阶段变化随机存取存储器(PC 内存) 基于有磅的 Si2Sb2Te5 逐渐变细加热电极(磅 --) ,它用一根焦点离子横梁(小谎) 被制作,被调查。与钨电极相比,磅 --facilitates 在阶段变化材料的温度上升,它从 3.6 ~ 2.7 V 引起重设电压的减少。有磅的房间的编程区域 -- 是比有加热电极的圆柱的钨的房间的小的。有磅的 PC 内存的改进表演 -- 是归因于更高的抵抗力和编程区域的磅电极,和减小的更低的热电导率,它被热模拟也验证。 展开更多
关键词 相变存储器 铂电极 纤维蛋白原 稳定运行 电极制备 低功耗 随机存取存储器 锥底
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Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling
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作者 龚岳峰 宋志棠 +2 位作者 凌云 刘燕 封松林 《Chinese Physics Letters》 SCIE CAS CSCD 2009年第11期227-230,共4页
为阶段变化随机存取记忆(PCRAM ) 的一个三维的有限元素模型在集合操作期间为全面电、热的分析被建立。增加结构(HS ) 和在底部电极(肋骨) 的戒指类型接触组织的加热器的集合行为与对方相比。有减少 RESET 水流的二个方法,使用一个高... 为阶段变化随机存取记忆(PCRAM ) 的一个三维的有限元素模型在集合操作期间为全面电、热的分析被建立。增加结构(HS ) 和在底部电极(肋骨) 的戒指类型接触组织的加热器的集合行为与对方相比。有减少 RESET 水流的二个方法,使用一个高抵抗力界面的层和大楼新设备结构。模拟结果显示有不同电源减小方法的集合电流的变化是很少。这研究考虑 RESET 和集合操作电流,证明 RIB 结构 PCRAM 房间对有高热效率的未来设备合适并且高密度,由于它在重设操作的高热效率。 展开更多
关键词 随机存取存储器 低功耗 有限元建模 加热器 复位操作 器件结构 二阶 模拟
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Performance of Superconducting Nanowire Single-Photon Detection System
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作者 申小芳 杨晓燕 尤立星 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第8期200-202,共3页
我们在场我们的实验室基于 cryocooler 的超导的 nanowire 单身者光子察觉(SNSPD ) 系统。黑暗计数率和系统量效率与一个 300-mK 温度变化在 3.1 K 的洗澡温度被调查。SNSPD 的极化敏感也被测量,并且数率的系统和预定神经质被讨论。[... 我们在场我们的实验室基于 cryocooler 的超导的 nanowire 单身者光子察觉(SNSPD ) 系统。黑暗计数率和系统量效率与一个 300-mK 温度变化在 3.1 K 的洗澡温度被调查。SNSPD 的极化敏感也被测量,并且数率的系统和预定神经质被讨论。[从作者抽象] 展开更多
关键词 光子探测系统 超导性能 纳米线 温度波动 单光子探测 偏振灵敏度 量子效率 定时抖动
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