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Study of the morphology evolution of AlN grown on nanopatterned sapphire substrate 被引量:2
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作者 Zhuohui Wu Jianchang Yan +5 位作者 Yanan Guo Liang Zhang Yi Lu Xuecheng Wei Junxi Wang Jinmin Li 《Journal of Semiconductors》 EI CAS CSCD 2019年第12期130-134,共5页
This study focused on the evolution of growth front about AlN growth on nano-patterned sapphire substrate by metal-organic chemical vapor deposition.The substrate with concave cones was fabricated by nano-imprint lith... This study focused on the evolution of growth front about AlN growth on nano-patterned sapphire substrate by metal-organic chemical vapor deposition.The substrate with concave cones was fabricated by nano-imprint lithography and wet etching.Two samples with different epitaxy procedures were fabricated,manifesting as two-dimensional growth mode and three-dimensional growth mode,respectively.The results showed that growth temperature deeply influenced the growth modes and thus played a critical role in the coalescence of AlN.At a relatively high temperature,the AlN epilayer was progressively coalescence and the growth mode was two-dimensional.In this case,we found that the inclined semi-polar facets arising in the process of coalescence were{112^-1}type.But when decreasing the temperature,the{112^-2}semi-polar facets arose,leading to inverse pyramid morphology and obtaining the three-dimensional growth mode.The 3 D inverse pyramid AlN structure could be used for realizing 3 D semi-polar UV-LED or facet-controlled epitaxial lateral overgrowth of AlN. 展开更多
关键词 ALN epitaxial lateral overgrowth growth front evolution 2D and 3D growth modes MOCVD
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Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer 被引量:1
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作者 Yunqi Li Xinwei Wang +2 位作者 Ning Zhang Xuecheng Wei Junxi Wang 《Journal of Semiconductors》 EI CAS CSCD 2022年第7期84-88,共5页
We report on the effect of inserted photonic crystalline(Ph-C) in the GaN epitaxial layer on the incorporation of the indium component for the InGaN-based green LED. The adoption of Ph-C in the GaN layer shifted the R... We report on the effect of inserted photonic crystalline(Ph-C) in the GaN epitaxial layer on the incorporation of the indium component for the InGaN-based green LED. The adoption of Ph-C in the GaN layer shifted the Raman peak value of E2mode of GaN to lower frequency and resulted in a tensive stress relief. The stress relief can be attributed to strained lattices restoring in the matrix of Ph-C and the GaN pseudo-epitaxy over the air-void of the Ph-C. Moreover, the HRXRD rocking curves and AFM results show that the insertion of Ph-C also improves the crystal quality. With the inserted Ph-C, the indium component in the multiple quantum wells of the green LED(Ph-C LED) was enhanced. This resulted in a 6-nm red-shift of the peak wavelength. Furthermore, the LOP of the Ph-C LED was enhanced by 10.65% under an injection current of 20 mA. 展开更多
关键词 epitaxial growth nanocrystalline materials SEMICONDUCTORS RAMAN stress relief X-ray techniques
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Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array 被引量:8
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作者 LIANG ZHANG YANAN GUO +7 位作者 JIANCHANG YAN QINGQING WU YI LU ZHUOHUI WU WEN GU XUECHENG WEI JUNXI WANG JINMIN LI 《Photonics Research》 SCIE EI CSCD 2019年第9期941-947,共7页
The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet light-emitting diodes(DUV LEDs). In this paper, we first report the electrically injected 274-nm AlGaN nanorod array DUV LEDs ... The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet light-emitting diodes(DUV LEDs). In this paper, we first report the electrically injected 274-nm AlGaN nanorod array DUV LEDs fabricated by the nanosphere lithography and dry-etching technique. Nanorod DUV LED devices with good electrical properties are successfully realized. Compared to planar DUV LEDs, nanorod DUV LEDs present>2.5 times improvement in light output power and external quantum efficiency. The internal quantum efficiency of nanorod LEDs increases by 1.2 times due to the transformation of carriers from the exciton to the free electron–hole, possibly driven by the interface state effect of the nanorod sidewall surface. In addition, the nanorod array significantly facilitates photons escaping from the interior of LEDs along the vertical direction, contributing to improved light extraction efficiency. A three-dimensional finite-different time-domain simulation is performed to analyze further in detail the TE-and TM-polarized photon extraction mechanisms of the nanostructure. Our results demonstrate the nanorod structure is a good candidate for high-efficiency DUV emitters. 展开更多
关键词 Deep ultraviolet LIGHT-EMITTING DIODES based on a well-ordered ALGAN nanorod array ALGAN
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On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes
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作者 Kangkai Tian Chunshuang Chu +5 位作者 Jiamang Che Hua Shao Jianquan Kou Yonghui Zhang Zi-Hui Zhang Tongbo Wei 《Chinese Optics Letters》 SCIE EI CAS CSCD 2019年第12期68-72,共5页
The tilted energy band in the multiple quantum wells(MQWs) arising from the polarization effect causes the quantum confined Stark effect(QCSE) for [0001] oriented III-nitride-based near ultraviolet light-emitting ... The tilted energy band in the multiple quantum wells(MQWs) arising from the polarization effect causes the quantum confined Stark effect(QCSE) for [0001] oriented III-nitride-based near ultraviolet light-emitting diodes(NUV LEDs). Here, we prove that the polarization effect in the MQWs for NUV LEDs can be self-screened once the polarization-induced bulk charges are employed by using the alloy-gradient InxGa1-xN quantum barriers. The numerical calculations demonstrate that the electric field in the quantum wells becomes weak and thereby flattens the energy band in the quantum wells, which accordingly increases the spatial overlap for the electron-hole wave functions. The polarization self-screening effect is further proven by observing the blueshift for the peak emission wavelength in the calculated and the measured emission spectra. Our results also indicate that for NUV LEDs with a small conduction band offset between the quantum well and the quantum barrier,the electron injection efficiency for the proposed structure becomes low. Therefore, we suggest doping the proposed quantum barrier structures with Mg dopants. 展开更多
关键词 POLARIZATION DIODES QUANTUM
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Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications 被引量:5
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作者 Zhaolong Chen Baolu Guan +11 位作者 Xu-dong Chen Qing Zeng Li Lin Ruoyu Wang Manish Kr. Priydarshi Jingyu Sun Zhepeng Zhang Tongbo Wei Jinmin LI Yanfeng Zhang Yingying Zhang Zhongfan Liu 《Nano Research》 SCIE EI CAS CSCD 2016年第10期3048-3055,共8页
Fast and uniform growth of high-quality graphene on conventional glass is of great importance for practical applications of graphene glass. We report herein a confined-flow chemical vapor deposition (CVD) approach f... Fast and uniform growth of high-quality graphene on conventional glass is of great importance for practical applications of graphene glass. We report herein a confined-flow chemical vapor deposition (CVD) approach for the high- efficiency fabrication of graphene glass. The key feature of our approach is the fabrication of a 2-4 μm wide gap above the glass substrate, with plenty of stumbling blocks; this gap was found to significantly increase the collision probability of the carbon precursors and reactive fragments between one another and with the glass surface. As a result, the growth rate of graphene glass increased remarkably, together with an improvement in the growth quality and uniformity as compared to those in the conventional gas flow CVD technique. These high-quality graphene glasses exhibited an excellent defogging performance with much higher defogging speed and higher stability compared to those previously reported. The graphene sapphire glass was found to be an ideal substrate for growing uniform and ultra-smooth aluminum nitride thin films without the tedious pre-deposition of a buffer layer. The presented confined- flow CVD approach offers a simple and low-cost route for the mass production of graphene glass, which is believed to promote the practical applications of various graphene glasses. 展开更多
关键词 graphene glass confined-flow chemicalvapor deposition transparent heating device epitaxial A1N film
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Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE 被引量:2
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作者 曹峻松 吕欣 +2 位作者 赵璐冰 曲爽 高伟 《Journal of Semiconductors》 EI CAS CSCD 2015年第2期34-37,共4页
The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. ... The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode. 展开更多
关键词 metalorganic vapor phase epitaxy gallium nitride high resolution X-ray diffraction
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