The single and coupled photonic crystal nanocavity lasers are fabricated in the InGaAsP material system and their static and dynamic features are compared. The coupled-cavity lasers show a larger lasing e^ciency and g...The single and coupled photonic crystal nanocavity lasers are fabricated in the InGaAsP material system and their static and dynamic features are compared. The coupled-cavity lasers show a larger lasing e^ciency and generate an output power higher than the single-cavity lasers, results that are consistent with the theoretical results obtained by rate equations. In dynamic regime, the single-cavity lasers produce pulses as short as 113 ps, while the coupled-cavity lasers show a significantly longer lasing duration. These results indicate that the photonic crystal laser is a promising candidate for the light source in high-speed photonic integrated circuit.展开更多
We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot （QD） lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-wa...We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot （QD） lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50oC are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.展开更多
基金Supported by the National Key Basic Research Special Fund/CNKBRSF of China under Grant Nos 2012CB933501,2016YFA0301102,2016YFB0401804 and 2016YFB0402203the National Natural Science Foundation of China under Grant Nos61535013,61321063 and 61137003+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant Nos XDB24010100,XDB24010200,XDB24020100 and XDB24030100the One Hundred Person Project of the Chinese Academy of Sciences
文摘The single and coupled photonic crystal nanocavity lasers are fabricated in the InGaAsP material system and their static and dynamic features are compared. The coupled-cavity lasers show a larger lasing e^ciency and generate an output power higher than the single-cavity lasers, results that are consistent with the theoretical results obtained by rate equations. In dynamic regime, the single-cavity lasers produce pulses as short as 113 ps, while the coupled-cavity lasers show a significantly longer lasing duration. These results indicate that the photonic crystal laser is a promising candidate for the light source in high-speed photonic integrated circuit.
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2006AA03Z401, One-Hundred Talents Program of Chinese Academy of Sciences, and the National Natural Science Foundation of China under Grant No 60876033.
文摘We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot （QD） lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50oC are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.
