The compound GdNiSn has been studied by X-ray powder diffraction technique.The crystal structure and the X-ray diffraction data for this compound at room temperature are reported.The compound GdNiSn is orthorhombic wi...The compound GdNiSn has been studied by X-ray powder diffraction technique.The crystal structure and the X-ray diffraction data for this compound at room temperature are reported.The compound GdNiSn is orthorhombic with lattice parameters a=7.2044(1)A,b=7.6895(6)A,c=4.4772(4)A,space group Pna2_(1) and 4 formula units of GdNiSn in unit cell.The Smith and Snyder figure of index F_(30) for this compound is 35(0.015,59).展开更多
Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavilydoped silicon, a "peak-height’ method has been dcveloped. The phosphorus-doped CZ-Si with n=（7.l～l2）...Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavilydoped silicon, a "peak-height’ method has been dcveloped. The phosphorus-doped CZ-Si with n=（7.l～l2）×10<sup>1</sup>7cm<sup>-3</sup> was taken as sample for characterization. The calculation results at 300 K and 10 K were ptesentedin detail. The"peak-height" method is much simpler than "short-baseline" and "curved-baseline" methods.展开更多
The local vibration mode(LVM)of carbon acceptor in GaAs is studied by measuring directly the changein LVM absorption with a NIC-170 SX FT-IR spectrometer.The change in the charge state of carbon acceptorand the temper...The local vibration mode(LVM)of carbon acceptor in GaAs is studied by measuring directly the changein LVM absorption with a NIC-170 SX FT-IR spectrometer.The change in the charge state of carbon acceptorand the temperature dependence of the LVM absorption were investigated also.The contents of the impuritiesother than carbon were estimated by secondary ion mass spectrometry.It is observed that the frequency,thespectral form and the integrated absorption of the LVM are not affected by the change in charge state of car-bon acceptor.展开更多
Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscopeat room temperature for the first time.The experimental results showed that the carbon concentration inGaAs thin wafers...Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscopeat room temperature for the first time.The experimental results showed that the carbon concentration inGaAs thin wafers can be measured directly with simple treatment.The calculation method of carbon concen-tration is in agreement with that for normal IR spectrum with 0.5 cm<sup>-1</sup>resolution.The resolution of1 cm<sup>-1</sup>can be taken in order to obtain a high signal-to-noise（S/N）ratio using 2.34×10<sup>16</sup>cm<sup>-2</sup>calibration factor for calculating carbon concentration at room temperature.展开更多
Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results ind...Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration radial distribution is W-shaped and net acceptor concentration radial distribution is sample-dependent, it can present a n shape, a A shape, or a W shape corresponding to different samples.展开更多
基金Supported by a Grant-in-Aid from the International Centre for Diffraction Data and the Natural Science Foundation of Guangxi Zhuang Autonomous Region。
文摘The compound GdNiSn has been studied by X-ray powder diffraction technique.The crystal structure and the X-ray diffraction data for this compound at room temperature are reported.The compound GdNiSn is orthorhombic with lattice parameters a=7.2044(1)A,b=7.6895(6)A,c=4.4772(4)A,space group Pna2_(1) and 4 formula units of GdNiSn in unit cell.The Smith and Snyder figure of index F_(30) for this compound is 35(0.015,59).
文摘Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavilydoped silicon, a "peak-height’ method has been dcveloped. The phosphorus-doped CZ-Si with n=（7.l～l2）×10<sup>1</sup>7cm<sup>-3</sup> was taken as sample for characterization. The calculation results at 300 K and 10 K were ptesentedin detail. The"peak-height" method is much simpler than "short-baseline" and "curved-baseline" methods.
文摘The local vibration mode(LVM)of carbon acceptor in GaAs is studied by measuring directly the changein LVM absorption with a NIC-170 SX FT-IR spectrometer.The change in the charge state of carbon acceptorand the temperature dependence of the LVM absorption were investigated also.The contents of the impuritiesother than carbon were estimated by secondary ion mass spectrometry.It is observed that the frequency,thespectral form and the integrated absorption of the LVM are not affected by the change in charge state of car-bon acceptor.
文摘Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscopeat room temperature for the first time.The experimental results showed that the carbon concentration inGaAs thin wafers can be measured directly with simple treatment.The calculation method of carbon concen-tration is in agreement with that for normal IR spectrum with 0.5 cm<sup>-1</sup>resolution.The resolution of1 cm<sup>-1</sup>can be taken in order to obtain a high signal-to-noise（S/N）ratio using 2.34×10<sup>16</sup>cm<sup>-2</sup>calibration factor for calculating carbon concentration at room temperature.
文摘Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration radial distribution is W-shaped and net acceptor concentration radial distribution is sample-dependent, it can present a n shape, a A shape, or a W shape corresponding to different samples.
