We investigate the structural,static magnetic and damping properties in two Mn-deficient magnetic Weyl semimetal Co-Mn-Ga(CMG) alloy films,i.e.,Co_(55)Mn_(18)Ga_(27)(CMG1) and Co_(50)Mn_(18)Ga_(32)(CMG2),which were ep...We investigate the structural,static magnetic and damping properties in two Mn-deficient magnetic Weyl semimetal Co-Mn-Ga(CMG) alloy films,i.e.,Co_(55)Mn_(18)Ga_(27)(CMG1) and Co_(50)Mn_(18)Ga_(32)(CMG2),which were epitaxially grown on MgO(001) substrates.CMG1 has a mixing phase of B2and L21,larger saturation magnetization(M_(s) ~760 emu/cm^(3)),stronger in-plane magnetic anisotropy.CMG2 has an almost pure B2phase,smaller M_(s)(~330 emu/cm^(3)),negligible in-plane magnetic anisotropy.Time-resolved magneto-optical Kerr effect results unambiguously demonstrate an obvious perpendicular standing spin wave(PSSW) mode in addition to the Kittel mode for both of the CMG films.The intrinsic damping constant is about 0.0055 and 0.015 for CMG1 and CMG2,respectively,which are both significantly larger than that of the stoichiometric CMG(i.e.,Co_(2)MnGa)film reported previously.In combination with the first-principles calculations,the intrinsic damping properties of the Mn-deficient CMG films can be well explained by considering the increase of density of states at the Fermi level,reduction of M_(s),and excitation of the PSSW mode.These findings provide a new clue to tuning the magnetic damping of the magnetic Weyl semimetal film through slight off-stoichiometry.展开更多
Research of spin polarization of magnetic CoFeB thin films is of practical importance in spintronic applications.Here,using a direct characterization technique of spin-resolved photoemission spectroscopy,we obtain the...Research of spin polarization of magnetic CoFeB thin films is of practical importance in spintronic applications.Here,using a direct characterization technique of spin-resolved photoemission spectroscopy,we obtain the surface spin polarization of amorphous Co_(40)Fe_(40)B_(20)thin films with different annealing temperatures from 100℃to 500℃prepared by magnetron sputtering.After high annealing temperature,a quasi-semiconductor state is gradually formed at the CoFeB surface due to the boron diffusion.While the global magnetization remains almost constant,the secondary electrons’spin polarization,average valence band spin polarization and the spin polarization at Fermi level from spin-resolved photoemission spectroscopy show a general trend of decreasing with the increasing annealing temperature above 100℃.These distinct surface properties are attributed to the enhanced Fe-B bonding due to the boron segregation upon surface after annealing as confirmed by x-ray photoelectron spectroscopy and scanning transmission electron microscopy with energy dispersive spectroscopy.Our findings provide insight into the surface spin-resolved electronic structure of the CoFeB thin films,which should be important for development of high-performance magnetic random-access memories.展开更多
The ternary topological insulators Bi2Se3-xTex have attracted a great deal of attention due to their exotic physical and chemical properties.While most of the studies focus on the properties of these ternary TIs,limit...The ternary topological insulators Bi2Se3-xTex have attracted a great deal of attention due to their exotic physical and chemical properties.While most of the studies focus on the properties of these ternary TIs,limited research was performed to investigate the dynamic atomic stack of its crystal structure.We prepared highquality Bi2Se3-xTex thin films on Ga As(111)B substrates using molecular beam epitaxy,characterized with Raman spectroscopy,x-ray diffraction and photoelectron spectroscopy.It is found that when Se is replaced by Te,the preferred substituting sites are the middle layer at 0<x<1,and this is also valid for Se substituting Te at 2<x<3.In the middle region,the substituting atoms prefer to go to the first and the fifth layer.展开更多
基金supported by the National Key R&D Program of China (Grant Nos.2022YFA1403602 and 2021YFB3601600)the National Natural Science Foundation of China (Grant Nos.51971109,U22A20117,51771053,52001169,11874199,12104216,and 12241403)the Natural Science Foundation of Jiangsu Province of China (Grant No.BK20200307)。
文摘We investigate the structural,static magnetic and damping properties in two Mn-deficient magnetic Weyl semimetal Co-Mn-Ga(CMG) alloy films,i.e.,Co_(55)Mn_(18)Ga_(27)(CMG1) and Co_(50)Mn_(18)Ga_(32)(CMG2),which were epitaxially grown on MgO(001) substrates.CMG1 has a mixing phase of B2and L21,larger saturation magnetization(M_(s) ~760 emu/cm^(3)),stronger in-plane magnetic anisotropy.CMG2 has an almost pure B2phase,smaller M_(s)(~330 emu/cm^(3)),negligible in-plane magnetic anisotropy.Time-resolved magneto-optical Kerr effect results unambiguously demonstrate an obvious perpendicular standing spin wave(PSSW) mode in addition to the Kittel mode for both of the CMG films.The intrinsic damping constant is about 0.0055 and 0.015 for CMG1 and CMG2,respectively,which are both significantly larger than that of the stoichiometric CMG(i.e.,Co_(2)MnGa)film reported previously.In combination with the first-principles calculations,the intrinsic damping properties of the Mn-deficient CMG films can be well explained by considering the increase of density of states at the Fermi level,reduction of M_(s),and excitation of the PSSW mode.These findings provide a new clue to tuning the magnetic damping of the magnetic Weyl semimetal film through slight off-stoichiometry.
基金supported by the National Key Research and Development Program of China(Grant No.2021YFB3601600)the National Natural Science Foundation of China(Grant Nos.12104216,61427812,11774160,51971109,51871236,51771053,U1806219)+1 种基金the Natural Science Foundation of Jiangsu Province of China(Grant Nos.BK20200307,BK20192006,BK20180056)the Fundamental Research Funds for the Central Universities(Grant No.21014380113)。
文摘Research of spin polarization of magnetic CoFeB thin films is of practical importance in spintronic applications.Here,using a direct characterization technique of spin-resolved photoemission spectroscopy,we obtain the surface spin polarization of amorphous Co_(40)Fe_(40)B_(20)thin films with different annealing temperatures from 100℃to 500℃prepared by magnetron sputtering.After high annealing temperature,a quasi-semiconductor state is gradually formed at the CoFeB surface due to the boron diffusion.While the global magnetization remains almost constant,the secondary electrons’spin polarization,average valence band spin polarization and the spin polarization at Fermi level from spin-resolved photoemission spectroscopy show a general trend of decreasing with the increasing annealing temperature above 100℃.These distinct surface properties are attributed to the enhanced Fe-B bonding due to the boron segregation upon surface after annealing as confirmed by x-ray photoelectron spectroscopy and scanning transmission electron microscopy with energy dispersive spectroscopy.Our findings provide insight into the surface spin-resolved electronic structure of the CoFeB thin films,which should be important for development of high-performance magnetic random-access memories.
基金Supported by the National Key Research and Development Program of China(Grant No.2016YFA0300803)the National Natural Science Foundation of China(Grant Nos.61474061,61674079,and 61974061)the Jiangsu Shuang Chuang Program and the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20140054)。
文摘The ternary topological insulators Bi2Se3-xTex have attracted a great deal of attention due to their exotic physical and chemical properties.While most of the studies focus on the properties of these ternary TIs,limited research was performed to investigate the dynamic atomic stack of its crystal structure.We prepared highquality Bi2Se3-xTex thin films on Ga As(111)B substrates using molecular beam epitaxy,characterized with Raman spectroscopy,x-ray diffraction and photoelectron spectroscopy.It is found that when Se is replaced by Te,the preferred substituting sites are the middle layer at 0<x<1,and this is also valid for Se substituting Te at 2<x<3.In the middle region,the substituting atoms prefer to go to the first and the fifth layer.
