The urban power grid(UPG)combines transmission and distribution networks.Past studies on UPG congestion mitigation have primarily focused on relieving local congestion while ignoring large-scale energy transfer with s...The urban power grid(UPG)combines transmission and distribution networks.Past studies on UPG congestion mitigation have primarily focused on relieving local congestion while ignoring large-scale energy transfer with safety margins and load balancing.This situation is expected to worsen with the proliferation of renewable energy and electric vehicles.In this paper,a two-layer congestion mitigation framework is proposed,one which considers the congestion of the UPG with flexible topologies.In the upper-layer,the particle swarm optimization algorithm is employed to optimize the power supply distribution(PSD)of substation transformers.This is known as the upper-layer PSD.The lower-layer model recalculates the new PSD,known as the lower-layer PSD,based on the topology candidates.A candidate topology is at an optimum when the Euclidean distance mismatch between the upper-and lower-layer PSDs is the smallest.This optimum topology is tested by standard power flow to ascertain its feasibility.The optimum transitioning sequence between the initial and optimum topologies is also determined by the two-layer framework to minimize voltage deviation and line overloading of the UPG considering dynamic thermal rating.The proposed framework is tested on a 56-node test system.Results show that the proposed framework can significantly reduce congestion,maintain safety margins,and determine the optimum transitioning sequence.展开更多
This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels du...This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.展开更多
基金supported by the Universiti Sains Malaysia,Research University Team(RUTeam)Grant Scheme(No.1001/PELECT/8580011).
文摘The urban power grid(UPG)combines transmission and distribution networks.Past studies on UPG congestion mitigation have primarily focused on relieving local congestion while ignoring large-scale energy transfer with safety margins and load balancing.This situation is expected to worsen with the proliferation of renewable energy and electric vehicles.In this paper,a two-layer congestion mitigation framework is proposed,one which considers the congestion of the UPG with flexible topologies.In the upper-layer,the particle swarm optimization algorithm is employed to optimize the power supply distribution(PSD)of substation transformers.This is known as the upper-layer PSD.The lower-layer model recalculates the new PSD,known as the lower-layer PSD,based on the topology candidates.A candidate topology is at an optimum when the Euclidean distance mismatch between the upper-and lower-layer PSDs is the smallest.This optimum topology is tested by standard power flow to ascertain its feasibility.The optimum transitioning sequence between the initial and optimum topologies is also determined by the two-layer framework to minimize voltage deviation and line overloading of the UPG considering dynamic thermal rating.The proposed framework is tested on a 56-node test system.Results show that the proposed framework can significantly reduce congestion,maintain safety margins,and determine the optimum transitioning sequence.
文摘This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.
